JP4356071B2 - スパッタリングターゲット材およびその製造方法 - Google Patents
スパッタリングターゲット材およびその製造方法 Download PDFInfo
- Publication number
- JP4356071B2 JP4356071B2 JP2004102899A JP2004102899A JP4356071B2 JP 4356071 B2 JP4356071 B2 JP 4356071B2 JP 2004102899 A JP2004102899 A JP 2004102899A JP 2004102899 A JP2004102899 A JP 2004102899A JP 4356071 B2 JP4356071 B2 JP 4356071B2
- Authority
- JP
- Japan
- Prior art keywords
- metal element
- target material
- sputtering target
- grains
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013077 target material Substances 0.000 title claims description 58
- 238000005477 sputtering target Methods 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000002184 metal Substances 0.000 claims description 68
- 229910052751 metal Inorganic materials 0.000 claims description 68
- 239000000843 powder Substances 0.000 claims description 42
- 238000004544 sputter deposition Methods 0.000 claims description 16
- 239000002994 raw material Substances 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052720 vanadium Inorganic materials 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 238000011049 filling Methods 0.000 claims description 4
- 238000010298 pulverizing process Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 description 16
- 229910001182 Mo alloy Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 239000000523 sample Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 238000001513 hot isostatic pressing Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000000748 compression moulding Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000005098 hot rolling Methods 0.000 description 4
- 229910000599 Cr alloy Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000007088 Archimedes method Methods 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004102899A JP4356071B2 (ja) | 2004-03-31 | 2004-03-31 | スパッタリングターゲット材およびその製造方法 |
| US11/070,339 US20050230244A1 (en) | 2004-03-31 | 2005-03-03 | Sputter target material and method of producing the same |
| CNB2005100594763A CN100447290C (zh) | 2004-03-31 | 2005-03-25 | 溅射靶材料及其生产方法 |
| KR1020050026676A KR100665243B1 (ko) | 2004-03-31 | 2005-03-30 | 스퍼터링 표적재 및 그의 제조 방법 |
| TW094109924A TWI310407B (en) | 2004-03-31 | 2005-03-30 | Sputter target material and method of producing the same |
| KR1020060086790A KR20060102322A (ko) | 2004-03-31 | 2006-09-08 | 스퍼터링 표적재 및 그의 제조 방법 |
| US12/479,121 US8409498B2 (en) | 2004-03-31 | 2009-06-05 | Method of producing a sputter target material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004102899A JP4356071B2 (ja) | 2004-03-31 | 2004-03-31 | スパッタリングターゲット材およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005290409A JP2005290409A (ja) | 2005-10-20 |
| JP2005290409A5 JP2005290409A5 (enrdf_load_stackoverflow) | 2006-08-24 |
| JP4356071B2 true JP4356071B2 (ja) | 2009-11-04 |
Family
ID=35323679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004102899A Expired - Lifetime JP4356071B2 (ja) | 2004-03-31 | 2004-03-31 | スパッタリングターゲット材およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4356071B2 (enrdf_load_stackoverflow) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008255440A (ja) * | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | ＭｏＴｉ合金スパッタリングターゲット材 |
| AT10578U1 (de) * | 2007-12-18 | 2009-06-15 | Plansee Metall Gmbh | Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht |
| JP5518375B2 (ja) * | 2008-09-19 | 2014-06-11 | 山陽特殊製鋼株式会社 | 加速電極用ドリル加工性に優れたモリブデン合金からなる成形体およびその製造方法 |
| JP5287669B2 (ja) * | 2009-11-04 | 2013-09-11 | 住友金属鉱山株式会社 | 真空蒸着法用酸化亜鉛系酸化物ペレットの製造方法 |
| US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
| US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
| US9334565B2 (en) | 2012-05-09 | 2016-05-10 | H.C. Starck Inc. | Multi-block sputtering target with interface portions and associated methods and articles |
| AT13602U3 (de) | 2013-10-29 | 2014-08-15 | Plansee Se | Sputtering Target und Verfahren zur Herstellung |
| US10704137B2 (en) * | 2014-09-30 | 2020-07-07 | Jx Nippon Mining & Metals Corporation | Master alloy for sputtering target and method for producing sputtering target |
| AT15356U1 (de) * | 2016-09-29 | 2017-07-15 | Plansee Se | Sputtering Target |
| JP7205213B2 (ja) * | 2018-03-27 | 2023-01-17 | 日立金属株式会社 | ＴｉＷ合金ターゲットおよびその製造方法 |
| JP7267086B2 (ja) * | 2019-05-07 | 2023-05-01 | 株式会社アルバック | スパッタリングターゲットの製造方法 |
| AU2020429466A1 (en) * | 2020-01-31 | 2022-08-11 | Massachusetts Institute Of Technology | Molybdenum-containing alloys and associated systems and methods |
| CN111850490B (zh) * | 2020-07-29 | 2023-01-20 | 丰联科光电(洛阳)股份有限公司 | 一种二元钼合金溅射靶材及其制备方法 |
| CN114934260B (zh) * | 2022-05-23 | 2024-02-13 | 安泰天龙钨钼科技有限公司 | 一种钼合金靶材及其制备方法和应用 |
-
2004
- 2004-03-31 JP JP2004102899A patent/JP4356071B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005290409A (ja) | 2005-10-20 |
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