JP4339736B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4339736B2 JP4339736B2 JP2004112255A JP2004112255A JP4339736B2 JP 4339736 B2 JP4339736 B2 JP 4339736B2 JP 2004112255 A JP2004112255 A JP 2004112255A JP 2004112255 A JP2004112255 A JP 2004112255A JP 4339736 B2 JP4339736 B2 JP 4339736B2
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- Prior art keywords
- gate electrode
- film
- moisture
- forming
- photoresist
- Prior art date
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- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000002184 metal Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 229920002120 photoresistant polymer Polymers 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 29
- 238000001312 dry etching Methods 0.000 claims description 15
- 125000006850 spacer group Chemical group 0.000 claims description 14
- 239000011229 interlayer Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
以下、本発明の実施の形態1に係る半導体装置の製造方法について図面を用いて説明する。
以下、本発明の実施の形態2に係る半導体装置の製造方法について図面を用いて説明する。図1と同じ構成要素には同じ番号を付し、説明を省略する。
以下、本発明の実施の形態3に係る半導体装置の製造方法について図面を用いて説明する。図1と同じ構成要素には同じ番号を付し、説明を省略する。
12 スペーサ膜
13 Au膜(第1の防湿用金属膜)
14 フォトレジスト(第1のフォトレジスト)
15 開口部
16 防湿用絶縁膜
17 リセス
18 WSi膜(ゲートメタル)
19 Au膜(ゲートメタル)
20 フォトレジスト(第2のフォトレジスト)
21 Au膜(第2の防湿用金属膜)
22 層間絶縁膜
23 ダミーパターン
24 フォトレジスト(第1のフォトレジスト)
Claims (1)
- 半導体基板に接合する茎部と前記半導体基板から離間した傘部とからなるT型ゲート電極を有する半導体装置の製造方法であって、
前記半導体基板上の前記T型ゲート電極の茎部に相当する部分に、ダミーパターンを形成する工程と、
前記ダミーパターンの側壁に防湿用絶縁膜を形成する工程と、
全面にスペーサ膜を形成する工程と、
前記ダミーパターンが露出するまでCMPにより平坦化処理を行う工程と、
全面に第1の防湿用金属膜を形成する工程と、
前記T型ゲート電極の茎部に相当する部分に開口を有する第1のフォトレジストを形成する工程と、
前記第1のフォトレジストをマスクにして、前記第1の防湿用金属膜と前記ダミーパターンをドライエッチングして開口部を作成する工程と、
前記開口部の底部に露出した前記半導体基板に、選択ドライエッチングによりリセスを形成する工程と、
前記第1のフォトレジストを除去する工程と、
水と反応する材料を含むゲートメタルを全面に形成する工程と、
前記ゲートメタル上に、前記ゲート電極の傘部に相当する部分を覆う第2のフォトレジストを形成する工程と、
前記第2のフォトレジストをマスクにして、前記ゲートメタル及び前記第1の防湿用金属膜をドライエッチングする工程と、
前記スペーサ膜を選択エッチングにより除去する工程と、
前記T型ゲート電極の傘部と半導体基板の間に、前記防湿用絶縁膜よりも誘電率が低い層間絶縁膜を形成する工程とを有することを特徴とする半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004112255A JP4339736B2 (ja) | 2004-04-06 | 2004-04-06 | 半導体装置の製造方法 |
US11/011,140 US7190010B2 (en) | 2004-04-06 | 2004-12-15 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004112255A JP4339736B2 (ja) | 2004-04-06 | 2004-04-06 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005302780A JP2005302780A (ja) | 2005-10-27 |
JP4339736B2 true JP4339736B2 (ja) | 2009-10-07 |
Family
ID=35059694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004112255A Expired - Fee Related JP4339736B2 (ja) | 2004-04-06 | 2004-04-06 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7190010B2 (ja) |
JP (1) | JP4339736B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2328779B1 (en) * | 2008-09-24 | 2015-07-08 | Code 3, Inc. | Light bar |
CA2742806C (en) * | 2008-11-06 | 2016-11-29 | Innovations In Optics, Inc. | Light emitting diode emergency lighting module |
JP5687207B2 (ja) * | 2009-01-26 | 2015-03-18 | イノベーションズ イン オプティクス, インコーポレイテッド | 機械視覚のための発光ダイオード線形光 |
US8278841B2 (en) * | 2009-07-02 | 2012-10-02 | Innovations In Optics, Inc. | Light emitting diode light engine |
US8403527B2 (en) | 2010-10-26 | 2013-03-26 | Thomas J. Brukilacchio | Light emitting diode projector |
USD742270S1 (en) | 2013-06-12 | 2015-11-03 | Code 3, Inc. | Single level low-profile light bar with optional speaker |
USD742269S1 (en) | 2013-06-12 | 2015-11-03 | Code 3, Inc. | Dual level low-profile light bar with optional speaker |
USD748598S1 (en) | 2013-06-12 | 2016-02-02 | Code 3, Inc. | Speaker for a light bar |
KR102497251B1 (ko) * | 2015-12-29 | 2023-02-08 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05159560A (ja) | 1991-12-06 | 1993-06-25 | Fujitsu Ltd | Icカード用半導体装置及びicカード |
JPH05166803A (ja) | 1991-12-18 | 1993-07-02 | Sumitomo Electric Ind Ltd | 化合物半導体装置 |
JPH05218016A (ja) | 1992-02-05 | 1993-08-27 | Sumitomo Electric Ind Ltd | 化合物半導体装置 |
JPH05234990A (ja) | 1992-02-26 | 1993-09-10 | Sumitomo Electric Ind Ltd | 半導体装置 |
JPH05299638A (ja) | 1992-04-21 | 1993-11-12 | Toshiba Corp | 化合物半導体装置における電極配線の形成方法 |
JPH07321127A (ja) | 1994-05-20 | 1995-12-08 | Toshiba Corp | 化合物半導体装置及びその製造方法 |
JP2551380B2 (ja) | 1994-05-30 | 1996-11-06 | 日本電気株式会社 | 半導体装置およびその製造方法 |
KR100211070B1 (ko) | 1994-08-19 | 1999-07-15 | 아끼구사 나오유끼 | 반도체 장치 및 그 제조방법 |
US6870232B1 (en) * | 1996-07-18 | 2005-03-22 | International Business Machines Corporation | Scalable MOS field effect transistor |
JP3686226B2 (ja) | 1997-09-01 | 2005-08-24 | 株式会社ルネサステクノロジ | 化合物半導体装置 |
JP4041660B2 (ja) | 2001-05-31 | 2008-01-30 | ユーディナデバイス株式会社 | 半導体装置及びその製造方法 |
-
2004
- 2004-04-06 JP JP2004112255A patent/JP4339736B2/ja not_active Expired - Fee Related
- 2004-12-15 US US11/011,140 patent/US7190010B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20050224846A1 (en) | 2005-10-13 |
JP2005302780A (ja) | 2005-10-27 |
US7190010B2 (en) | 2007-03-13 |
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