JP4314118B2 - 改善された出力許容性を有する電極構造体及び製造法 - Google Patents

改善された出力許容性を有する電極構造体及び製造法 Download PDF

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Publication number
JP4314118B2
JP4314118B2 JP2003568774A JP2003568774A JP4314118B2 JP 4314118 B2 JP4314118 B2 JP 4314118B2 JP 2003568774 A JP2003568774 A JP 2003568774A JP 2003568774 A JP2003568774 A JP 2003568774A JP 4314118 B2 JP4314118 B2 JP 4314118B2
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layer
electrode structure
substrate
aluminum
electrode
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JP2003568774A
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Japanese (ja)
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JP2005518127A (ja
JP2005518127A5 (https=
Inventor
ライドル アントン
クナウアー ウルリッヒ
ルイレ ヴェルナー
ペン リジュン
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TDK Electronics AG
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Epcos AG
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02929—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02897—Means for compensation or elimination of undesirable effects of strain or mechanical damage, e.g. strain due to bending influence

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2003568774A 2002-02-15 2003-02-07 改善された出力許容性を有する電極構造体及び製造法 Expired - Fee Related JP4314118B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10206369A DE10206369B4 (de) 2002-02-15 2002-02-15 Elektrodenstruktur mit verbesserter Leistungsverträglichkeit und Verfahren zur Herstellung
PCT/DE2003/000363 WO2003069775A1 (de) 2002-02-15 2003-02-07 Elektrodenstruktur mit verbesserter leistungsverträglichkeit und verfahren zur herstellung

Publications (3)

Publication Number Publication Date
JP2005518127A JP2005518127A (ja) 2005-06-16
JP2005518127A5 JP2005518127A5 (https=) 2006-03-09
JP4314118B2 true JP4314118B2 (ja) 2009-08-12

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ID=27635000

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JP2003568774A Expired - Fee Related JP4314118B2 (ja) 2002-02-15 2003-02-07 改善された出力許容性を有する電極構造体及び製造法

Country Status (4)

Country Link
US (1) US7345409B2 (https=)
JP (1) JP4314118B2 (https=)
DE (1) DE10206369B4 (https=)
WO (1) WO2003069775A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111130484A (zh) * 2019-07-25 2020-05-08 珠海晶讯聚震科技有限公司 封装的电子组件

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DE102004032621B4 (de) * 2004-07-05 2016-05-25 Epcos Ag SAW Bauelement mit verbesserter Leistungsverträglichkeit
DE102004045181B4 (de) * 2004-09-17 2016-02-04 Epcos Ag SAW-Bauelement mit reduziertem Temperaturgang und Verfahren zur Herstellung
DE102004058016B4 (de) * 2004-12-01 2014-10-09 Epcos Ag Mit akustischen Oberflächenwellen arbeitendes Bauelement mit hoher Bandbreite
JP4279271B2 (ja) 2005-06-01 2009-06-17 アルプス電気株式会社 弾性表面波素子及びその製造方法
US20060289948A1 (en) * 2005-06-22 2006-12-28 International Business Machines Corporation Method to control flatband/threshold voltage in high-k metal gated stacks and structures thereof
DE102006039515B4 (de) * 2006-08-23 2012-02-16 Epcos Ag Drehbewegungssensor mit turmartigen Schwingstrukturen
DE102006044663A1 (de) * 2006-09-21 2008-04-03 Epcos Ag Filterbauelement
DE102006048879B4 (de) * 2006-10-16 2018-02-01 Snaptrack, Inc. Elektroakustisches Bauelement
DE102009021508B4 (de) 2009-05-15 2014-05-22 Epcos Ag Elektrode mit verbesserter Leistungsfestigkeit
US9520856B2 (en) 2009-06-24 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator structure having an electrode with a cantilevered portion
US8330556B2 (en) * 2009-11-23 2012-12-11 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Passivation layers in acoustic resonators
DE102009056663B4 (de) 2009-12-02 2022-08-11 Tdk Electronics Ag Metallisierung mit hoher Leistungsverträglichkeit und hoher elektrischer Leitfähigkeit und Verfahren zur Herstellung
US20110304412A1 (en) * 2010-06-10 2011-12-15 Hao Zhang Acoustic Wave Resonators and Methods of Manufacturing Same
DE102010034121A1 (de) * 2010-08-12 2012-02-16 Epcos Ag Mit akustischen Wellen arbeitendes Bauelement mit reduziertem Temperaturgang der Frequenzlage und Verfahren zur Herstellung
JP5664655B2 (ja) * 2010-09-17 2015-02-04 株式会社村田製作所 弾性波装置
DE102010048620B4 (de) 2010-10-15 2013-03-28 Epcos Ag Elektrode, mikroakustisches Bauelement und Herstellungsverfahren für eine Elektrode
WO2012090873A1 (ja) * 2010-12-28 2012-07-05 京セラ株式会社 弾性波素子およびそれを用いた弾性波装置
US9203374B2 (en) 2011-02-28 2015-12-01 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonator comprising a bridge
US9425764B2 (en) 2012-10-25 2016-08-23 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having composite electrodes with integrated lateral features
US9444426B2 (en) 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
DE102011087820A1 (de) 2011-12-06 2013-06-06 Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. Akustisches oberflächenwellenbauelement und verfahren zu seiner herstellung
US9608592B2 (en) 2014-01-21 2017-03-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic wave resonator (FBAR) having stress-relief
US9136820B2 (en) * 2012-07-31 2015-09-15 Tdk Corporation Piezoelectric device
WO2014090302A1 (en) * 2012-12-12 2014-06-19 Epcos Ag Electroacoustic component
JP6589983B2 (ja) 2015-07-02 2019-10-16 株式会社村田製作所 弾性波装置
WO2017013946A1 (ja) * 2015-07-17 2017-01-26 株式会社村田製作所 弾性波装置
US20180041187A1 (en) * 2016-08-04 2018-02-08 Skyworks Filter Solutions Japan Co., Ltd. Surface acoustic wave elements having improved resistance to cracking, and methods of manufacturing same
JP2019092019A (ja) * 2017-11-14 2019-06-13 株式会社村田製作所 弾性波装置、高周波フロントエンド回路及び通信装置
DE102018109849B4 (de) * 2018-04-24 2020-03-05 RF360 Europe GmbH Elektroakustischer Resonator und Verfahren zum Bilden desselben
CN115668767B (zh) 2020-05-28 2025-12-26 株式会社村田制作所 弹性波装置

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JPS62272610A (ja) * 1986-05-21 1987-11-26 Hitachi Ltd 弾性表面波素子
JP3379049B2 (ja) * 1993-10-27 2003-02-17 富士通株式会社 表面弾性波素子とその製造方法
JPH0969748A (ja) * 1995-09-01 1997-03-11 Matsushita Electric Ind Co Ltd Ｓａｗデバイスおよびその製造方法
JPH09223944A (ja) * 1995-12-13 1997-08-26 Fujitsu Ltd 弾性表面波素子及びその製造方法
EP0803919B1 (de) * 1996-04-25 2001-06-13 Epcos Ag Verfahren zum Herstellen einer Metallisierung auf piezoelektrischen Substraten
US6377138B1 (en) * 1997-07-28 2002-04-23 Kabushiki Kaisha Toshiba Surface acoustic wave device with a layered conductive film and method of producing the same
EP1124328A1 (en) * 2000-02-10 2001-08-16 Lucent Technologies Inc. A method of fabricating a zinc oxide based resonator
JP3402311B2 (ja) * 2000-05-19 2003-05-06 株式会社村田製作所 弾性表面波装置
JP3521864B2 (ja) * 2000-10-26 2004-04-26 株式会社村田製作所 弾性表面波素子
JP3445971B2 (ja) * 2000-12-14 2003-09-16 富士通株式会社 弾性表面波素子
JP3926633B2 (ja) 2001-06-22 2007-06-06 沖電気工業株式会社 Ｓａｗデバイス及びその製造方法
US7148610B2 (en) * 2002-02-01 2006-12-12 Oc Oerlikon Balzers Ag Surface acoustic wave device having improved performance and method of making the device
JP4060090B2 (ja) * 2002-02-15 2008-03-12 沖電気工業株式会社 弾性表面波素子
CN100576738C (zh) * 2002-04-15 2009-12-30 松下电器产业株式会社 表面声波器件及利用其的移动通信设备和传感器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111130484A (zh) * 2019-07-25 2020-05-08 珠海晶讯聚震科技有限公司 封装的电子组件

Also Published As

Publication number Publication date
JP2005518127A (ja) 2005-06-16
US20060175639A1 (en) 2006-08-10
DE10206369B4 (de) 2012-12-27
US7345409B2 (en) 2008-03-18
WO2003069775A1 (de) 2003-08-21
DE10206369A1 (de) 2003-08-28

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