JP4275395B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4275395B2
JP4275395B2 JP2002359920A JP2002359920A JP4275395B2 JP 4275395 B2 JP4275395 B2 JP 4275395B2 JP 2002359920 A JP2002359920 A JP 2002359920A JP 2002359920 A JP2002359920 A JP 2002359920A JP 4275395 B2 JP4275395 B2 JP 4275395B2
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Japan
Prior art keywords
layer
tungsten
silicon
tungsten nitride
polysilicon
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Expired - Fee Related
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JP2002359920A
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English (en)
Japanese (ja)
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JP2004193365A5 (https=
JP2004193365A (ja
Inventor
和義 前川
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2002359920A priority Critical patent/JP4275395B2/ja
Priority to US10/456,529 priority patent/US6975007B2/en
Publication of JP2004193365A publication Critical patent/JP2004193365A/ja
Publication of JP2004193365A5 publication Critical patent/JP2004193365A5/ja
Priority to US11/266,213 priority patent/US7371681B2/en
Priority to US11/936,145 priority patent/US7538030B2/en
Priority to US11/936,138 priority patent/US7479446B2/en
Application granted granted Critical
Publication of JP4275395B2 publication Critical patent/JP4275395B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/664—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a barrier layer between the layer of silicon and an upper metal or metal silicide layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/28—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by an annealing step, e.g. for activation of dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2002359920A 2002-12-11 2002-12-11 半導体装置の製造方法 Expired - Fee Related JP4275395B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002359920A JP4275395B2 (ja) 2002-12-11 2002-12-11 半導体装置の製造方法
US10/456,529 US6975007B2 (en) 2002-12-11 2003-06-09 Semiconductor device including a polysilicon, barrier structure, and tungsten layer electrode
US11/266,213 US7371681B2 (en) 2002-12-11 2005-11-04 Method of manufacturing a semiconductor device
US11/936,145 US7538030B2 (en) 2002-12-11 2007-11-07 Semiconductor device and method of manufacturing same
US11/936,138 US7479446B2 (en) 2002-12-11 2007-11-07 Semiconductor device and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002359920A JP4275395B2 (ja) 2002-12-11 2002-12-11 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2004193365A JP2004193365A (ja) 2004-07-08
JP2004193365A5 JP2004193365A5 (https=) 2005-09-08
JP4275395B2 true JP4275395B2 (ja) 2009-06-10

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JP2002359920A Expired - Fee Related JP4275395B2 (ja) 2002-12-11 2002-12-11 半導体装置の製造方法

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US (4) US6975007B2 (https=)
JP (1) JP4275395B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100937992B1 (ko) 2003-01-13 2010-01-21 주식회사 하이닉스반도체 게이트전극 및 그를 구비한 반도체 소자의 제조 방법
JP4690120B2 (ja) * 2005-06-21 2011-06-01 エルピーダメモリ株式会社 半導体装置及びその製造方法
KR100759845B1 (ko) * 2006-09-11 2007-09-18 삼성전자주식회사 불휘발성 메모리 장치 및 이의 제조 방법
KR100881391B1 (ko) * 2006-09-29 2009-02-05 주식회사 하이닉스반도체 반도체 소자의 게이트 형성방법
US20080149990A1 (en) * 2006-12-21 2008-06-26 Spansion Llc Memory system with poly metal gate
JP2013197121A (ja) * 2012-03-15 2013-09-30 Toshiba Corp 半導体装置及びその製造方法
KR20130116099A (ko) * 2012-04-13 2013-10-23 삼성전자주식회사 반도체 장치 및 그 제조 방법
CN103839806B (zh) * 2012-11-20 2018-02-13 中国科学院微电子研究所 半导体器件及其制造方法
CN105097474B (zh) * 2014-05-09 2018-03-06 中国科学院微电子研究所 一种半导体器件的制造方法
US10199267B2 (en) * 2017-06-30 2019-02-05 Lam Research Corporation Tungsten nitride barrier layer deposition

Family Cites Families (19)

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JPH04225568A (ja) 1990-12-27 1992-08-14 Toshiba Corp 半導体装置のコンタクト構造及びその製造方法
US5341016A (en) * 1993-06-16 1994-08-23 Micron Semiconductor, Inc. Low resistance device element and interconnection structure
US5576579A (en) * 1995-01-12 1996-11-19 International Business Machines Corporation Tasin oxygen diffusion barrier in multilayer structures
JPH10335652A (ja) * 1997-05-30 1998-12-18 Hitachi Ltd 半導体集積回路装置の製造方法
JPH11233451A (ja) 1997-10-07 1999-08-27 Texas Instr Inc <Ti> 安定した低抵抗のポリ・メタル・ゲート電極を製造するためのｃｖｄに基くプロセス
US6291868B1 (en) * 1998-02-26 2001-09-18 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
US6100188A (en) * 1998-07-01 2000-08-08 Texas Instruments Incorporated Stable and low resistance metal/barrier/silicon stack structure and related process for manufacturing
KR100296126B1 (ko) 1998-12-22 2001-08-07 박종섭 고집적 메모리 소자의 게이트전극 형성방법
KR100396692B1 (ko) * 1999-06-16 2003-09-02 주식회사 하이닉스반도체 반도체 소자의 제조방법
US6313033B1 (en) * 1999-07-27 2001-11-06 Applied Materials, Inc. Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applications
JP2001308322A (ja) 2000-04-26 2001-11-02 Hitachi Ltd 半導体集積回路装置の製造方法
JP2001326348A (ja) 2000-05-16 2001-11-22 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP2002043566A (ja) * 2000-07-27 2002-02-08 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR20020033851A (ko) * 2000-10-30 2002-05-08 박종섭 반도체소자의 게이트전극 제조 방법
JP3961211B2 (ja) 2000-10-31 2007-08-22 株式会社東芝 半導体装置の製造方法
JP2002280550A (ja) * 2001-03-22 2002-09-27 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
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Also Published As

Publication number Publication date
US7371681B2 (en) 2008-05-13
US20080064196A1 (en) 2008-03-13
US6975007B2 (en) 2005-12-13
JP2004193365A (ja) 2004-07-08
US20080076239A1 (en) 2008-03-27
US7479446B2 (en) 2009-01-20
US7538030B2 (en) 2009-05-26
US20060054981A1 (en) 2006-03-16
US20040113213A1 (en) 2004-06-17

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