JP4272484B2 - 熱処理方法 - Google Patents

熱処理方法 Download PDF

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Publication number
JP4272484B2
JP4272484B2 JP2003304297A JP2003304297A JP4272484B2 JP 4272484 B2 JP4272484 B2 JP 4272484B2 JP 2003304297 A JP2003304297 A JP 2003304297A JP 2003304297 A JP2003304297 A JP 2003304297A JP 4272484 B2 JP4272484 B2 JP 4272484B2
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JP
Japan
Prior art keywords
temperature
reaction tube
heat treatment
reaction chamber
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003304297A
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English (en)
Japanese (ja)
Other versions
JP2005079131A (ja
Inventor
武彦 藤田
明威 田村
鈴木　　啓介
一秀 長谷部
充弘 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2003304297A priority Critical patent/JP4272484B2/ja
Priority to TW093124555A priority patent/TW200524052A/zh
Priority to TW100125689A priority patent/TW201207948A/zh
Priority to US10/924,959 priority patent/US7211514B2/en
Priority to KR1020040067671A priority patent/KR100870608B1/ko
Publication of JP2005079131A publication Critical patent/JP2005079131A/ja
Application granted granted Critical
Publication of JP4272484B2 publication Critical patent/JP4272484B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H10P95/90—
    • H10P72/0434—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2003304297A 2003-08-28 2003-08-28 熱処理方法 Expired - Fee Related JP4272484B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003304297A JP4272484B2 (ja) 2003-08-28 2003-08-28 熱処理方法
TW093124555A TW200524052A (en) 2003-08-28 2004-08-16 Heat-processing method and apparatus for semiconductor process
TW100125689A TW201207948A (en) 2003-08-28 2004-08-16 Heat treatment method and heat treatment equipment
US10/924,959 US7211514B2 (en) 2003-08-28 2004-08-25 Heat-processing method for semiconductor process under a vacuum pressure
KR1020040067671A KR100870608B1 (ko) 2003-08-28 2004-08-27 열처리 방법 및 열처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003304297A JP4272484B2 (ja) 2003-08-28 2003-08-28 熱処理方法

Publications (2)

Publication Number Publication Date
JP2005079131A JP2005079131A (ja) 2005-03-24
JP4272484B2 true JP4272484B2 (ja) 2009-06-03

Family

ID=34408021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003304297A Expired - Fee Related JP4272484B2 (ja) 2003-08-28 2003-08-28 熱処理方法

Country Status (4)

Country Link
US (1) US7211514B2 (enExample)
JP (1) JP4272484B2 (enExample)
KR (1) KR100870608B1 (enExample)
TW (2) TW201207948A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4450664B2 (ja) * 2003-06-02 2010-04-14 東京エレクトロン株式会社 基板処理装置及び基板搬送方法
JP2006229040A (ja) * 2005-02-18 2006-08-31 Matsushita Electric Ind Co Ltd 熱処理方法および熱処理装置
TWD122891S1 (zh) * 2006-06-16 2008-05-11 東京威力科創股份有限公司 半導體製造用散熱抑制環
TWD122892S1 (zh) * 2006-06-16 2008-05-11 東京威力科創股份有限公司 半導體製造用散熱抑制環
US8282698B2 (en) * 2010-03-24 2012-10-09 Lam Research Corporation Reduction of particle contamination produced by moving mechanisms in a process tool
JP6082283B2 (ja) * 2012-05-30 2017-02-15 東京エレクトロン株式会社 筐体及びこれを含む基板処理装置
JP6894256B2 (ja) 2017-02-23 2021-06-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
CN111370284B (zh) * 2020-03-13 2022-12-09 北京北方华创微电子装备有限公司 半导体热处理设备的清扫方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10289880A (ja) 1997-04-16 1998-10-27 Nec Kyushu Ltd 減圧気相成長装置
KR20000018773A (ko) * 1998-09-04 2000-04-06 윤종용 화학 기상 증착장치
JP3555536B2 (ja) 2000-01-31 2004-08-18 ウシオ電機株式会社 ランプユニット
JP3998906B2 (ja) * 2000-09-28 2007-10-31 株式会社日立国際電気 半導体装置の製造方法
JP3753985B2 (ja) 2001-09-26 2006-03-08 セイコーインスツル株式会社 減圧気相成長装置
JP2003100645A (ja) 2001-09-27 2003-04-04 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2003183837A (ja) * 2001-12-12 2003-07-03 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置

Also Published As

Publication number Publication date
JP2005079131A (ja) 2005-03-24
KR100870608B1 (ko) 2008-11-25
US7211514B2 (en) 2007-05-01
TWI362074B (enExample) 2012-04-11
KR20050021339A (ko) 2005-03-07
US20050095826A1 (en) 2005-05-05
TW200524052A (en) 2005-07-16
TW201207948A (en) 2012-02-16
TWI362075B (enExample) 2012-04-11

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