JP5950530B2 - 基板処理装置及び半導体装置の製造方法 - Google Patents
基板処理装置及び半導体装置の製造方法 Download PDFInfo
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- JP5950530B2 JP5950530B2 JP2011219126A JP2011219126A JP5950530B2 JP 5950530 B2 JP5950530 B2 JP 5950530B2 JP 2011219126 A JP2011219126 A JP 2011219126A JP 2011219126 A JP2011219126 A JP 2011219126A JP 5950530 B2 JP5950530 B2 JP 5950530B2
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- 239000000758 substrate Substances 0.000 title claims description 146
- 238000012545 processing Methods 0.000 title claims description 116
- 239000004065 semiconductor Substances 0.000 title description 7
- 238000004519 manufacturing process Methods 0.000 title description 6
- 238000012546 transfer Methods 0.000 claims description 79
- 238000010438 heat treatment Methods 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 78
- 239000007789 gas Substances 0.000 description 49
- 238000006243 chemical reaction Methods 0.000 description 20
- 229910010271 silicon carbide Inorganic materials 0.000 description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 230000007723 transport mechanism Effects 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
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- 239000010703 silicon Substances 0.000 description 5
- 238000002791 soaking Methods 0.000 description 5
- 239000003779 heat-resistant material Substances 0.000 description 4
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- 239000011261 inert gas Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
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- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000287462 Phalacrocorax carbo Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 125000004429 atom Chemical group 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
又、本発明は以下の実施の態様を含む。
2 ヒータ
3 均熱管
4 反応管
5 ボート
6 ボートキャップ
13 ウェーハ
15 基板処理装置
28 処理室
34 伝熱板
35 伝熱板
37 凸部
38 伝熱板
39 凸部
Claims (6)
- 複数枚の基板を保持する基板保持具と、
該基板保持具が搬入される処理炉と、
該処理炉に設けられ前記基板を加熱する加熱部と、
前記処理炉内に処理ガスを供給するガス供給部と、
前記処理炉内を排気する排気部と、
前記加熱部と前記ガス供給部と前記排気部とを制御する制御部とを具備し、
前記基板保持具の下部にはダミー基板が保持されると共に、
前記基板保持具の下端にボートキャップが設けられ、前記基板保持具の前記ダミー基板と前記ボートキャップとの間に所定の厚みを有する円板状の伝熱板を保持するホルダが形成され、
前記伝熱板は、前記基板よりも熱伝導率が大きく、熱放射率が高い材質で形成され、下面の中心部には凸部が形成されていることを特徴とする基板処理装置。 - 前記伝熱板はシリコン原子を含有する請求項1の基板処理装置。
- 下部に保持されたダミー基板と下端に設けられたボートキャップとの間に所定の厚みを有し、基板よりも熱伝導率が大きく、熱放射率が高い材質で形成され、下面の中心部には凸部が形成されている円板状の伝熱板を保持するホルダが設けられた基板保持具に複数枚の前記基板を移載する工程と、
前記基板保持具を処理室に搬入する工程と、
該処理室に処理ガスを供給する工程と、
前記基板を加熱する工程と、
前記処理室から前記基板保持具を搬出する工程と、
前記基板保持具から前記基板を取出す工程とを有することを特徴とする半導体装置の製造方法。 - 前記伝熱板はSiCで形成される請求項2に記載の基板処理装置。
- 前記凸部は前記伝熱板と同心な円筒状に形成されている請求項1又は請求項2に記載の基板処理装置。
- 前記凸部は前記伝熱板と同心な棒状に形成されている請求項1又は請求項2に記載の基板処理装置。
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US10032626B2 (en) * | 2014-09-19 | 2018-07-24 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device by forming a film on a substrate, substrate processing apparatus, and recording medium |
US11150140B2 (en) * | 2016-02-02 | 2021-10-19 | Kla Corporation | Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH09251960A (ja) * | 1996-03-15 | 1997-09-22 | Nec Corp | 半導体製造用ボート |
JP2001291670A (ja) * | 2000-04-10 | 2001-10-19 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP2007005581A (ja) * | 2005-06-24 | 2007-01-11 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2008071939A (ja) * | 2006-09-14 | 2008-03-27 | Hitachi Kokusai Electric Inc | 基板処理装置 |
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