JP4269709B2 - 発光装置およびその製造方法 - Google Patents

発光装置およびその製造方法 Download PDF

Info

Publication number
JP4269709B2
JP4269709B2 JP2003040712A JP2003040712A JP4269709B2 JP 4269709 B2 JP4269709 B2 JP 4269709B2 JP 2003040712 A JP2003040712 A JP 2003040712A JP 2003040712 A JP2003040712 A JP 2003040712A JP 4269709 B2 JP4269709 B2 JP 4269709B2
Authority
JP
Japan
Prior art keywords
light emitting
light
emitting device
main surface
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003040712A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003318448A (ja
JP2003318448A5 (enrdf_load_stackoverflow
Inventor
良馬 末永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2003040712A priority Critical patent/JP4269709B2/ja
Publication of JP2003318448A publication Critical patent/JP2003318448A/ja
Publication of JP2003318448A5 publication Critical patent/JP2003318448A5/ja
Application granted granted Critical
Publication of JP4269709B2 publication Critical patent/JP4269709B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2003040712A 2002-02-19 2003-02-19 発光装置およびその製造方法 Expired - Lifetime JP4269709B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003040712A JP4269709B2 (ja) 2002-02-19 2003-02-19 発光装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002041192 2002-02-19
JP2002-41192 2002-02-19
JP2003040712A JP4269709B2 (ja) 2002-02-19 2003-02-19 発光装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2003318448A JP2003318448A (ja) 2003-11-07
JP2003318448A5 JP2003318448A5 (enrdf_load_stackoverflow) 2006-03-16
JP4269709B2 true JP4269709B2 (ja) 2009-05-27

Family

ID=29551664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003040712A Expired - Lifetime JP4269709B2 (ja) 2002-02-19 2003-02-19 発光装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP4269709B2 (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017135380A (ja) * 2016-01-28 2017-08-03 エルジー イノテック カンパニー リミテッド 発光素子パッケージ及びこれを備えた発光装置
JP2019505097A (ja) * 2016-02-12 2019-02-21 エルジー イノテック カンパニー リミテッド 発光素子パッケージ及びこれを含む照明装置

Families Citing this family (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
US7244965B2 (en) 2002-09-04 2007-07-17 Cree Inc, Power surface mount light emitting die package
US7775685B2 (en) 2003-05-27 2010-08-17 Cree, Inc. Power surface mount light emitting die package
US7183587B2 (en) 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
JP3963460B2 (ja) * 2003-10-08 2007-08-22 スタンレー電気株式会社 Ｌｅｄランプ用パッケージおよび該ｌｅｄランプ用パッケージを具備するｌｅｄランプ
JP4124129B2 (ja) * 2004-01-23 2008-07-23 セイコーエプソン株式会社 光源装置及びプロジェクタ
DE10351934B4 (de) 2003-11-07 2017-07-13 Tridonic Jennersdorf Gmbh Leuchtdioden-Anordnung mit wärmeabführender Platine
JP4385741B2 (ja) * 2003-11-25 2009-12-16 パナソニック電工株式会社 発光装置
WO2005053041A1 (ja) * 2003-11-25 2005-06-09 Matsushita Electric Works, Ltd. 発光ダイオードチップを用いた発光装置
JP4821087B2 (ja) * 2003-11-28 2011-11-24 パナソニック電工株式会社 発光装置
JP2005158963A (ja) * 2003-11-25 2005-06-16 Matsushita Electric Works Ltd 発光装置
JP2005159045A (ja) * 2003-11-26 2005-06-16 Sumitomo Electric Ind Ltd 半導体発光素子搭載部材とそれを用いた発光ダイオード
JP2005191420A (ja) * 2003-12-26 2005-07-14 Stanley Electric Co Ltd 波長変換層を有する半導体発光装置およびその製造方法
US7355284B2 (en) 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
US7279346B2 (en) * 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
US7326583B2 (en) * 2004-03-31 2008-02-05 Cree, Inc. Methods for packaging of a semiconductor light emitting device
JP4229447B2 (ja) * 2004-03-31 2009-02-25 スタンレー電気株式会社 半導体発光装置及び製造方法
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
KR100634301B1 (ko) * 2004-04-21 2006-10-16 서울반도체 주식회사 발광다이오드
JP4359195B2 (ja) 2004-06-11 2009-11-04 株式会社東芝 半導体発光装置及びその製造方法並びに半導体発光ユニット
JP4254669B2 (ja) * 2004-09-07 2009-04-15 豊田合成株式会社 発光装置
JP4654639B2 (ja) * 2004-09-09 2011-03-23 日亜化学工業株式会社 発光装置及びその製造方法
US7855395B2 (en) * 2004-09-10 2010-12-21 Seoul Semiconductor Co., Ltd. Light emitting diode package having multiple molding resins on a light emitting diode die
US20060097385A1 (en) 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
JP2006140281A (ja) * 2004-11-11 2006-06-01 Stanley Electric Co Ltd パワーｌｅｄ及びその製造方法
KR101161396B1 (ko) * 2004-12-07 2012-07-02 서울반도체 주식회사 발광 다이오드
US7322732B2 (en) 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
KR100696062B1 (ko) * 2005-01-05 2007-03-15 엘지이노텍 주식회사 발광 반도체 패키지
US7304694B2 (en) 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
DE102005020908A1 (de) * 2005-02-28 2006-08-31 Osram Opto Semiconductors Gmbh Beleuchtungsvorrichtung
US7980743B2 (en) 2005-06-14 2011-07-19 Cree, Inc. LED backlighting for displays
CN101851432B (zh) 2005-06-14 2012-10-17 电气化学工业株式会社 含有荧光体的树脂组合物及片材，以及使用其的发光元件
JP5020480B2 (ja) * 2005-06-14 2012-09-05 電気化学工業株式会社 蛍光体組成物とその用途
EP2750194A1 (en) 2005-06-22 2014-07-02 Seoul Viosys Co., Ltd. Light emitting device comprising a plurality of light emitting diode cells
KR100631992B1 (ko) * 2005-07-19 2006-10-09 삼성전기주식회사 측면 방출형 이중 렌즈 구조 ｌｅｄ 패키지
JP4820133B2 (ja) * 2005-07-25 2011-11-24 パナソニック電工株式会社 発光装置
JP4818654B2 (ja) 2005-07-25 2011-11-16 ソニーケミカル＆インフォメーションデバイス株式会社 発光素子の封止方法
KR100629496B1 (ko) * 2005-08-08 2006-09-28 삼성전자주식회사 Ｌｅｄ 패키지 및 그 제조방법
JP4820135B2 (ja) * 2005-09-20 2011-11-24 パナソニック電工株式会社 発光装置
JP5235266B2 (ja) * 2005-09-29 2013-07-10 株式会社東芝 白色ｌｅｄの製造方法およびそれを用いたバックライトの製造方法並びに液晶表示装置の製造方法
JP2007123777A (ja) * 2005-10-31 2007-05-17 Sharp Corp 半導体発光装置
JP2007173733A (ja) * 2005-12-26 2007-07-05 Toshiba Lighting & Technology Corp 発光装置
JP5176273B2 (ja) * 2005-12-28 2013-04-03 日亜化学工業株式会社 発光装置及びその製造方法
JP5268082B2 (ja) * 2006-02-22 2013-08-21 シチズン電子株式会社 光半導体装置
JP2007234846A (ja) * 2006-03-01 2007-09-13 Ngk Spark Plug Co Ltd 発光素子用セラミックパッケージ
US8969908B2 (en) 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
JP2007311445A (ja) * 2006-05-17 2007-11-29 Stanley Electric Co Ltd 半導体発光装置及びその製造方法
US9502624B2 (en) 2006-05-18 2016-11-22 Nichia Corporation Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same
JP4884074B2 (ja) * 2006-05-22 2012-02-22 スタンレー電気株式会社 半導体発光装置
US8033692B2 (en) 2006-05-23 2011-10-11 Cree, Inc. Lighting device
EP2027602A4 (en) 2006-05-23 2012-11-28 Cree Inc LIGHTING DEVICE AND METHOD OF MAKING
WO2007135764A1 (ja) * 2006-05-24 2007-11-29 Sharp Kabushiki Kaisha 発光装置並びにこれを備えた照明装置および液晶表示装置
US7960819B2 (en) * 2006-07-13 2011-06-14 Cree, Inc. Leadframe-based packages for solid state emitting devices
US8044418B2 (en) 2006-07-13 2011-10-25 Cree, Inc. Leadframe-based packages for solid state light emitting devices
KR100803159B1 (ko) 2006-09-30 2008-02-14 서울반도체 주식회사 발광 다이오드 패키지용 발광 렌즈 및 이를 채용한 발광다이오드 패키지
KR101484488B1 (ko) * 2006-10-31 2015-01-20 코닌클리케 필립스 엔.브이. 조명 장치 패키지
US7897980B2 (en) 2006-11-09 2011-03-01 Cree, Inc. Expandable LED array interconnect
US10295147B2 (en) 2006-11-09 2019-05-21 Cree, Inc. LED array and method for fabricating same
JP2008147203A (ja) * 2006-12-05 2008-06-26 Sanken Electric Co Ltd 半導体発光装置
US7687823B2 (en) 2006-12-26 2010-03-30 Nichia Corporation Light-emitting apparatus and method of producing the same
US9159888B2 (en) 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8232564B2 (en) 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
DE102007011637A1 (de) * 2007-03-09 2008-09-18 Ivoclar Vivadent Ag Lichtemissionsvorrichtung
US10505083B2 (en) 2007-07-11 2019-12-10 Cree, Inc. Coating method utilizing phosphor containment structure and devices fabricated using same
EP2171502B1 (en) 2007-07-17 2016-09-14 Cree, Inc. Optical elements with internal optical features and methods of fabricating same
KR101374898B1 (ko) * 2007-09-28 2014-03-18 서울반도체 주식회사 계면 분리를 줄인 ｌｅｄ 패키지
JP5155638B2 (ja) * 2007-10-25 2013-03-06 パナソニック株式会社 発光装置
US8167674B2 (en) 2007-12-14 2012-05-01 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8637883B2 (en) 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
KR100992778B1 (ko) 2008-05-23 2010-11-05 엘지이노텍 주식회사 발광소자 패키지 및 그 제조방법
TWI456784B (zh) * 2008-07-29 2014-10-11 Nichia Corp 發光裝置
JP2010182746A (ja) * 2009-02-03 2010-08-19 Showa Denko Kk 発光装置、発光モジュールおよび発光装置を備えた電気装置
CN102396014A (zh) * 2009-02-11 2012-03-28 光成企业（株） 提高可视性和形态性的led组件，该led组件的附着方法和利用该led组件的广告牌
EP2402508A2 (en) * 2009-02-27 2012-01-04 Lumicos Co., Ltd. Led assembly having improved discernibility, an attachment method for the same, and a signboard and traffic safety display board to which the same has been attached
TWI381556B (zh) * 2009-03-20 2013-01-01 Everlight Electronics Co Ltd 發光二極體封裝結構及其製作方法
EP2346100B1 (en) * 2010-01-15 2019-05-22 LG Innotek Co., Ltd. Light emitting apparatus and lighting system
JP5496757B2 (ja) * 2010-04-16 2014-05-21 交和電気産業株式会社 照明装置
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
KR20120022410A (ko) * 2010-09-02 2012-03-12 삼성엘이디 주식회사 발광소자 패키지 및 그 제조 방법
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
JP5887889B2 (ja) * 2011-11-30 2016-03-16 セイコーエプソン株式会社 光照射装置
KR101161387B1 (ko) * 2011-12-05 2012-07-02 서울반도체 주식회사 발광 다이오드
KR101247380B1 (ko) * 2012-03-09 2013-03-26 서울반도체 주식회사 발광 다이오드
JP2014011364A (ja) * 2012-06-29 2014-01-20 Ｈｏｙａ Ｃａｎｄｅｏ Ｏｐｔｒｏｎｉｃｓ株式会社 Ｌｅｄモジュール
JP2014216385A (ja) * 2013-04-23 2014-11-17 イーグル工業株式会社 光学素子モジュール
DE102013208223B4 (de) * 2013-05-06 2021-09-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements
US9461214B2 (en) 2013-11-29 2016-10-04 Nichia Corporation Light emitting device with phosphor layer
JP6221696B2 (ja) * 2013-11-29 2017-11-01 日亜化学工業株式会社 発光装置の製造方法および発光装置
US9935247B2 (en) * 2014-07-23 2018-04-03 Crystal Is, Inc. Photon extraction from ultraviolet light-emitting devices
EP3038173B1 (en) * 2014-12-23 2019-05-22 LG Innotek Co., Ltd. Light emitting device
KR102309671B1 (ko) * 2015-01-30 2021-10-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지 및 조명 장치
JP6634304B2 (ja) * 2015-03-31 2020-01-22 株式会社小糸製作所 光源ユニット、光源ユニットの製造方法及び車輌用灯具
KR102509312B1 (ko) * 2016-02-24 2023-03-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
JP7165203B2 (ja) * 2018-11-19 2022-11-02 泉州三安半導体科技有限公司 紫外パッケージ素子
US12002908B2 (en) 2018-11-19 2024-06-04 Quanzhou Sanan Semiconductor Technology Co., Ltd. Light-emitting packaging device
DE102019105831A1 (de) * 2019-03-07 2020-09-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement mit einer transparenten verbindung zwischen zwei fügepartnern und verfahren zu dessen herstellung
TWI744139B (zh) * 2020-12-16 2021-10-21 隆達電子股份有限公司 二極體封裝結構及其製造方法
JP2022180743A (ja) * 2021-05-25 2022-12-07 東芝ライテック株式会社 車両用照明装置、および車両用灯具
TWI881244B (zh) * 2021-10-11 2025-04-21 日商大日本印刷股份有限公司 面發光裝置、顯示裝置、面發光裝置之製造方法及面發光裝置用密封構件片

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017135380A (ja) * 2016-01-28 2017-08-03 エルジー イノテック カンパニー リミテッド 発光素子パッケージ及びこれを備えた発光装置
JP2019505097A (ja) * 2016-02-12 2019-02-21 エルジー イノテック カンパニー リミテッド 発光素子パッケージ及びこれを含む照明装置

Also Published As

Publication number Publication date
JP2003318448A (ja) 2003-11-07

Similar Documents

Publication Publication Date Title
JP4269709B2 (ja) 発光装置およびその製造方法
JP3891115B2 (ja) 発光装置
US6924514B2 (en) Light-emitting device and process for producing thereof
US9947841B2 (en) Light emitting device having light guider
JP6149487B2 (ja) 発光装置の製造方法および発光装置
JP3991961B2 (ja) 側面発光型発光装置
US7390684B2 (en) Light emitting apparatus and method of manufacturing the same
US7045905B2 (en) Molded package and semiconductor device using molded package
US7842526B2 (en) Light emitting device and method of producing same
JP4055373B2 (ja) 発光装置の製造方法
JP4450547B2 (ja) 発光装置の製造方法
US10734556B2 (en) Manufacturing method for light emitting device
JP4374913B2 (ja) 発光装置
JP4430264B2 (ja) 表面実装型発光装置
JP6079209B2 (ja) 発光装置およびその製造方法
JP6769248B2 (ja) 発光装置
JP4059293B2 (ja) 発光装置
JP4792751B2 (ja) 発光装置およびその製造方法
EP3447810B1 (en) Light emitting device
JP4026659B2 (ja) 側面発光型発光装置
JP2006303548A (ja) 発光装置
JP4661031B2 (ja) 発光装置
JP4165592B2 (ja) 発光装置
JP7513907B2 (ja) 発光装置
JP7057528B2 (ja) 発光装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20081016

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081021

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081118

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081118

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090203

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090216

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120306

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4269709

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120306

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120306

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120306

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130306

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130306

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140306

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term