JP4243350B2 - Ｂｅを含んだ▲２▼―▲６▼族青・緑色レーザダイオード - Google Patents

Ｂｅを含んだ▲２▼―▲６▼族青・緑色レーザダイオード Download PDF

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JP4243350B2
JP4243350B2 JP50290398A JP50290398A JP4243350B2 JP 4243350 B2 JP4243350 B2 JP 4243350B2 JP 50290398 A JP50290398 A JP 50290398A JP 50290398 A JP50290398 A JP 50290398A JP 4243350 B2 JP4243350 B2 JP 4243350B2
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JP2000513146A5 (enExample
JP2000513146A (ja
Inventor
ジェイ． ミラー，トーマス
エイ． ハース，マイケル
エフ． バウド，ポール
ディー． パシュリー，マイケル
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3M Co
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3M Co
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP50290398A 1996-06-27 1997-01-16 Ｂｅを含んだ▲２▼―▲６▼族青・緑色レーザダイオード Expired - Lifetime JP4243350B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US2089396P 1996-06-27 1996-06-27
US08/726,618 1996-10-07
US08/726,618 US5818859A (en) 1996-06-27 1996-10-07 Be-containing II-VI blue-green laser diodes
US60/020,893 1996-10-07
PCT/US1997/000612 WO1997050159A1 (en) 1996-06-27 1997-01-16 Be-CONTAINING II-VI BLUE-GREEN LASER DIODES

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007166312A Division JP2007324607A (ja) 1996-06-27 2007-06-25 Ｉｉ−ｖｉ族化合物半導体レーザダイオード

Publications (3)

Publication Number Publication Date
JP2000513146A JP2000513146A (ja) 2000-10-03
JP2000513146A5 JP2000513146A5 (enExample) 2004-11-18
JP4243350B2 true JP4243350B2 (ja) 2009-03-25

Family

ID=26694025

Family Applications (2)

Application Number Title Priority Date Filing Date
JP50290398A Expired - Lifetime JP4243350B2 (ja) 1996-06-27 1997-01-16 Ｂｅを含んだ▲２▼―▲６▼族青・緑色レーザダイオード
JP2007166312A Pending JP2007324607A (ja) 1996-06-27 2007-06-25 Ｉｉ−ｖｉ族化合物半導体レーザダイオード

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007166312A Pending JP2007324607A (ja) 1996-06-27 2007-06-25 Ｉｉ−ｖｉ族化合物半導体レーザダイオード

Country Status (8)

Country Link
US (1) US5818859A (enExample)
EP (1) EP1016175B1 (enExample)
JP (2) JP4243350B2 (enExample)
AU (1) AU1534997A (enExample)
DE (1) DE69711942T2 (enExample)
MY (1) MY114337A (enExample)
TW (1) TW413959B (enExample)
WO (1) WO1997050159A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090637A (en) 1997-02-13 2000-07-18 3M Innovative Properties Company Fabrication of II-VI semiconductor device with BeTe buffer layer
US6214678B1 (en) * 1997-05-21 2001-04-10 Hughes Electronics Corp Growth technique for low noise high electron mobility transistors by metal organic vapor phase epitaxy
DE19729186A1 (de) * 1997-07-08 1999-01-14 Siemens Ag Verfahren zum Herstellen eines II-VI-Halbleiter-Bauelements
US5974070A (en) * 1997-11-17 1999-10-26 3M Innovative Properties Company II-VI laser diode with facet degradation reduction structure
JP3692269B2 (ja) * 1999-01-29 2005-09-07 シャープ株式会社 半導体レーザ素子及びその製造方法
US7026653B2 (en) * 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
JP4920344B2 (ja) * 2006-08-25 2012-04-18 株式会社日立製作所 半導体レーザ
US20110156002A1 (en) * 2008-09-04 2011-06-30 Leatherdale Catherine A Light source having light blocking components
WO2010027648A1 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company I i-vi mqw vcsel on a heat sink optically pumped by a gan ld
US8385380B2 (en) * 2008-09-04 2013-02-26 3M Innovative Properties Company Monochromatic light source
US8518814B2 (en) 2011-12-02 2013-08-27 Northrop Grumman Systems Corporation Methods of fabrication of high-density laser diode stacks

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2068339C (en) * 1990-09-12 2001-08-14 Narihito Matsumoto Quantum well semiconductor laser device
US5375134A (en) * 1991-02-21 1994-12-20 Sony Corporation Semiconductor light emitting device
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
CN1119358A (zh) * 1991-05-15 1996-03-27 明尼苏达州采矿制造公司 蓝-绿激光二极管
US5406574A (en) * 1991-10-23 1995-04-11 Kabushiki Kaisha Toshiba Semiconductor laser device
SG77568A1 (en) * 1992-02-19 2001-01-16 Sony Corp Semiconductor laser
JPH06104533A (ja) * 1992-09-22 1994-04-15 Matsushita Electric Ind Co Ltd 青色発光素子およびその製造方法
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
JP3239550B2 (ja) * 1993-08-30 2001-12-17 ソニー株式会社 半導体レーザ
JPH07232999A (ja) * 1994-02-21 1995-09-05 Kobe Steel Ltd ＺｎＳｅ系単結晶及びその製造方法
JP3233330B2 (ja) * 1994-08-23 2001-11-26 松下電器産業株式会社 半導体発光素子及びその製造方法
JPH0870155A (ja) * 1994-08-29 1996-03-12 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子
JPH0897518A (ja) * 1994-09-28 1996-04-12 Sony Corp 半導体発光素子
JP2586349B2 (ja) * 1994-11-17 1997-02-26 日本電気株式会社 半導体発光素子
DE19542241C2 (de) * 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial

Also Published As

Publication number Publication date
EP1016175A1 (en) 2000-07-05
AU1534997A (en) 1998-01-14
DE69711942D1 (de) 2002-05-16
JP2007324607A (ja) 2007-12-13
DE69711942T2 (de) 2002-09-12
TW413959B (en) 2000-12-01
MY114337A (en) 2002-09-30
US5818859A (en) 1998-10-06
EP1016175B1 (en) 2002-04-10
WO1997050159A1 (en) 1997-12-31
JP2000513146A (ja) 2000-10-03

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