JP2000513146A5 - - Google Patents
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- Publication number
- JP2000513146A5 JP2000513146A5 JP1998502903A JP50290398A JP2000513146A5 JP 2000513146 A5 JP2000513146 A5 JP 2000513146A5 JP 1998502903 A JP1998502903 A JP 1998502903A JP 50290398 A JP50290398 A JP 50290398A JP 2000513146 A5 JP2000513146 A5 JP 2000513146A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2089396P | 1996-06-27 | 1996-06-27 | |
| US60/020,893 | 1996-06-27 | ||
| US08/726,618 US5818859A (en) | 1996-06-27 | 1996-10-07 | Be-containing II-VI blue-green laser diodes |
| US08/726,618 | 1996-10-07 | ||
| PCT/US1997/000612 WO1997050159A1 (en) | 1996-06-27 | 1997-01-16 | Be-CONTAINING II-VI BLUE-GREEN LASER DIODES |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007166312A Division JP2007324607A (ja) | 1996-06-27 | 2007-06-25 | Ｉｉ−ｖｉ族化合物半導体レーザダイオード |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000513146A JP2000513146A (ja) | 2000-10-03 |
| JP2000513146A5 true JP2000513146A5 (enExample) | 2004-11-18 |
| JP4243350B2 JP4243350B2 (ja) | 2009-03-25 |
Family
ID=26694025
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50290398A Expired - Lifetime JP4243350B2 (ja) | 1996-06-27 | 1997-01-16 | Ｂｅを含んだ▲２▼―▲６▼族青・緑色レーザダイオード |
| JP2007166312A Pending JP2007324607A (ja) | 1996-06-27 | 2007-06-25 | Ｉｉ−ｖｉ族化合物半導体レーザダイオード |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007166312A Pending JP2007324607A (ja) | 1996-06-27 | 2007-06-25 | Ｉｉ−ｖｉ族化合物半導体レーザダイオード |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5818859A (enExample) |
| EP (1) | EP1016175B1 (enExample) |
| JP (2) | JP4243350B2 (enExample) |
| AU (1) | AU1534997A (enExample) |
| DE (1) | DE69711942T2 (enExample) |
| MY (1) | MY114337A (enExample) |
| TW (1) | TW413959B (enExample) |
| WO (1) | WO1997050159A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6090637A (en) * | 1997-02-13 | 2000-07-18 | 3M Innovative Properties Company | Fabrication of II-VI semiconductor device with BeTe buffer layer |
| US6214678B1 (en) * | 1997-05-21 | 2001-04-10 | Hughes Electronics Corp | Growth technique for low noise high electron mobility transistors by metal organic vapor phase epitaxy |
| DE19729186A1 (de) * | 1997-07-08 | 1999-01-14 | Siemens Ag | Verfahren zum Herstellen eines II-VI-Halbleiter-Bauelements |
| US5974070A (en) * | 1997-11-17 | 1999-10-26 | 3M Innovative Properties Company | II-VI laser diode with facet degradation reduction structure |
| JP3692269B2 (ja) * | 1999-01-29 | 2005-09-07 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
| US7026653B2 (en) * | 2004-01-27 | 2006-04-11 | Lumileds Lighting, U.S., Llc | Semiconductor light emitting devices including current spreading layers |
| JP4920344B2 (ja) * | 2006-08-25 | 2012-04-18 | 株式会社日立製作所 | 半導体レーザ |
| WO2010027581A1 (en) * | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | Monochromatic light source |
| WO2010027580A2 (en) * | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | Light source having light blocking components |
| WO2010027648A1 (en) * | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | I i-vi mqw vcsel on a heat sink optically pumped by a gan ld |
| US8518814B2 (en) | 2011-12-02 | 2013-08-27 | Northrop Grumman Systems Corporation | Methods of fabrication of high-density laser diode stacks |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2068339C (en) * | 1990-09-12 | 2001-08-14 | Narihito Matsumoto | Quantum well semiconductor laser device |
| US5375134A (en) * | 1991-02-21 | 1994-12-20 | Sony Corporation | Semiconductor light emitting device |
| CN1111840A (zh) * | 1991-05-15 | 1995-11-15 | 明尼苏达州采矿制造公司 | 蓝-绿激光二极管的制造方法 |
| US5404027A (en) * | 1991-05-15 | 1995-04-04 | Minnesota Mining & Manufacturing Compay | Buried ridge II-VI laser diode |
| US5406574A (en) * | 1991-10-23 | 1995-04-11 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
| DE69224054T2 (de) * | 1992-02-19 | 1998-08-20 | Sony Corp | Halbleiterlaser |
| JPH06104533A (ja) * | 1992-09-22 | 1994-04-15 | Matsushita Electric Ind Co Ltd | 青色発光素子およびその製造方法 |
| US5422902A (en) * | 1993-07-02 | 1995-06-06 | Philips Electronics North America Corporation | BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors |
| JP3239550B2 (ja) * | 1993-08-30 | 2001-12-17 | ソニー株式会社 | 半導体レーザ |
| JPH07232999A (ja) * | 1994-02-21 | 1995-09-05 | Kobe Steel Ltd | ＺｎＳｅ系単結晶及びその製造方法 |
| JP3233330B2 (ja) * | 1994-08-23 | 2001-11-26 | 松下電器産業株式会社 | 半導体発光素子及びその製造方法 |
| JPH0870155A (ja) * | 1994-08-29 | 1996-03-12 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子 |
| JPH0897518A (ja) * | 1994-09-28 | 1996-04-12 | Sony Corp | 半導体発光素子 |
| JP2586349B2 (ja) * | 1994-11-17 | 1997-02-26 | 日本電気株式会社 | 半導体発光素子 |
| DE19542241C2 (de) * | 1995-11-13 | 2003-01-09 | Siemens Ag | Optoelektronisches Bauelement in II-VI-Halbleitermaterial |
-
1996
- 1996-10-07 US US08/726,618 patent/US5818859A/en not_active Expired - Lifetime
-
1997
- 1997-01-16 EP EP97901454A patent/EP1016175B1/en not_active Expired - Lifetime
- 1997-01-16 JP JP50290398A patent/JP4243350B2/ja not_active Expired - Lifetime
- 1997-01-16 WO PCT/US1997/000612 patent/WO1997050159A1/en not_active Ceased
- 1997-01-16 AU AU15349/97A patent/AU1534997A/en not_active Abandoned
- 1997-01-16 DE DE69711942T patent/DE69711942T2/de not_active Expired - Lifetime
- 1997-03-17 MY MYPI97001122A patent/MY114337A/en unknown
- 1997-05-10 TW TW086106235A patent/TW413959B/zh not_active IP Right Cessation
-
2007
- 2007-06-25 JP JP2007166312A patent/JP2007324607A/ja active Pending