JP4705079B2 - Iii−v/ii−vi半導体インターフェイス製造法 - Google Patents
Iii−v/ii−vi半導体インターフェイス製造法 Download PDFInfo
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- JP4705079B2 JP4705079B2 JP2007233233A JP2007233233A JP4705079B2 JP 4705079 B2 JP4705079 B2 JP 4705079B2 JP 2007233233 A JP2007233233 A JP 2007233233A JP 2007233233 A JP2007233233 A JP 2007233233A JP 4705079 B2 JP4705079 B2 JP 4705079B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02477—Selenides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
- H01L21/02661—In-situ cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
Description
米国政府は、Advanced Research Projects Agency(国防総省)及びDepartment of the Army(陸軍省)/Army Research Office(陸軍研究機関)承認の契約第DAAH04−94−C0049号、及びAdvanced Research Projects Agency(国防総省)及びOffice of Naval Research(海軍研究機関)承認の契約第N00014−92−C−0122号により本発明に一定の権利を有する。
ZnSe、MgZnSSe、及び他のII−VI半導体から製造される電子デバイスは、一般に知られている。実例により、これらや、他のII−VI半導体化合物から分子線エピタキシー(MBE)によって製造されるレーザーダイオードが、ハーゼ(Haase)その外の米国特許第5,291,507号、及びチェン(Cheng)その外の米国特許第5,319,219号で開示される。これらのデバイスは、典型的にGaAs、または他のIII−V半導体化合物の基板上に製造される。
14 N型GaAsバッファ層
16 N型ZnSeバッファ層
18 CdZnSSe量子井戸
20 N型ZnSSe導光層
22 P型ZnSSe導光層
24 N型MgZnSSeクラッド層
26 P型MgZnSSeクラッド層
28 接触層
30 Pd
32 絶縁層
38 接触層
50 分子線エピタキシー(MBE)装置
68 III族元素ソース
70 V族元素ソース
72 II族元素ソース
Claims (4)
- III−V/II−VI半導体インターフェイスを製造する方法であって、
少なくともIII族元素ソースと、II族元素ソースと、V族元素ソースと、バルブを備えたVI族元素ソースとを含む分子線エピタキシー(MBE)装置を準備するステップと、
前記インターフェイスがその上に製造されるべきIII−V半導体表面を有する半導体基板を準備し、前記基板を前記MBE装置内に配置するステップと、
VI族元素ソース上のバルブが閉じられている間に、III−V半導体成長に適した温度に前記半導体基板を加熱し、前記基板のIII−V半導体表面上に結晶性III−V半導体バッファ層を成長させるステップと、
前記III−Vバッファ層を成長させた後にII−VI半導体成長に適した温度に前記半導体基板の温度を調整し、前記III−Vバッファ層上に結晶性II−VI半導体バッファ層を成長させるステップであって、当該ステップは、
前記半導体基板の温度を、III−V半導体成長温度よりも低いII−VI半導体成長温度まで低下させるステップと、
前記半導体基板の温度が、375℃から425℃に達した時、III−Vバッファ層をII族元素フラックスに曝すためにII族ソースを操作するステップと、さらに
前記半導体基板の温度がII−VI半導体成長温度に達したとき、交互ビームエピタキシーによってII−VIバッファ層を成長させるために、II族およびVI族ソースを操作するステップを含み、当該ステップは、III−Vバッファ層をII族元素フラックスに曝露して、III−Vバッファ層をVI族元素フラックスに曝露しVI族元素の層を成長させる以前にII族元素の層が成長するように、II族およびVI族ソースを操作するものであり、
前記III−V/II−VI半導体インターフェイスはGaAsバッファ層上のZnSeバッファ層である、III−V/II−VI半導体インターフェイスを製造する方法。 - 請求項1に記載の方法において、前記III−V半導体成長温度は600℃であり、II−VI半導体成長温度は315℃で、さらに、前記II族元素フラックスはZnを含む、III−V/II−VI半導体インターフェイスを製造する方法。
- 請求項1に記載の方法において、
MBE装置を準備する前記ステップは、
少なくともIII族元素ソースおよびV族元素ソースを含む第1のMBEチャンバを準備するステップと、
少なくともII族元素ソースおよびVI族元素ソースを含む第2のMBEチャンバを準備するステップと、
前記第1および第2のMBEチャンバ間に超高真空移送管を準備するステップと、を含み、
半導体基板を加熱し、III−Vバッファ層を成長させる前記ステップは、
前記第1のMBEチャンバ内で前記半導体基板を加熱するステップと、
前記第1のMBEチャンバ内で前記III−Vバッファ層を成長させるステップと、を含み、
前記半導体基板の温度を調整し、前記II−VIバッファ層を成長させるステップは、
前記移送管を介して前記第1のチャンバから前記第2のチャンバにIII−Vバッファ層を備えた前記半導体基板を移送するステップと、
前記III−Vバッファ層が(2×4)再構成を示した後、前記第2のMBEチャンバ内の交互ビームエピタキシーによって前記III−Vバッファ層上に前記II−VIバッファ層を成長させるステップであって、前記III−Vバッファ層をVI族元素フラックスに曝露しVI族元素の層を成長させる以前に前記III−Vバッファ層をII族元素フラックスに曝露することを含む、前記II−VIバッファ層を成長させるステップと、を含む、III−V/II−VI半導体インターフェイスを製造する方法。 - 請求項3に記載の方法において、前記温度の調整は、温度を315℃以上でかつ600℃以下とし、さらに前記II族元素フラックスはZnを含む、III−V/II−VI半導体インターフェイスを製造する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/571,607 | 1995-12-13 | ||
US08/571,607 US5879962A (en) | 1995-12-13 | 1995-12-13 | III-V/II-VI Semiconductor interface fabrication method |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP09522092A Division JP2000501889A (ja) | 1995-12-13 | 1996-12-05 | Iii―v/ii―vi半導体インターフェイス製造法 |
Publications (2)
Publication Number | Publication Date |
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JP2008004962A JP2008004962A (ja) | 2008-01-10 |
JP4705079B2 true JP4705079B2 (ja) | 2011-06-22 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP09522092A Withdrawn JP2000501889A (ja) | 1995-12-13 | 1996-12-05 | Iii―v/ii―vi半導体インターフェイス製造法 |
JP2007233233A Expired - Lifetime JP4705079B2 (ja) | 1995-12-13 | 2007-09-07 | Iii−v/ii−vi半導体インターフェイス製造法 |
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Application Number | Title | Priority Date | Filing Date |
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JP09522092A Withdrawn JP2000501889A (ja) | 1995-12-13 | 1996-12-05 | Iii―v/ii―vi半導体インターフェイス製造法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5879962A (ja) |
EP (1) | EP0875078B1 (ja) |
JP (2) | JP2000501889A (ja) |
KR (1) | KR100469112B1 (ja) |
CN (1) | CN1218409C (ja) |
AU (1) | AU1683697A (ja) |
DE (1) | DE69633460T2 (ja) |
MY (1) | MY112348A (ja) |
TW (1) | TW324864B (ja) |
WO (1) | WO1997022153A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6409883B1 (en) | 1999-04-16 | 2002-06-25 | Kimberly-Clark Worldwide, Inc. | Methods of making fiber bundles and fibrous structures |
US7968362B2 (en) * | 2001-03-27 | 2011-06-28 | Ricoh Company, Ltd. | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system |
US6873638B2 (en) | 2001-06-29 | 2005-03-29 | 3M Innovative Properties Company | Laser diode chip with waveguide |
US6946238B2 (en) * | 2001-06-29 | 2005-09-20 | 3M Innovative Properties Company | Process for fabrication of optical waveguides |
US6849874B2 (en) * | 2001-10-26 | 2005-02-01 | Cree, Inc. | Minimizing degradation of SiC bipolar semiconductor devices |
US7259084B2 (en) * | 2003-07-28 | 2007-08-21 | National Chiao-Tung University | Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer |
US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
US20070256635A1 (en) * | 2006-05-02 | 2007-11-08 | Applied Materials, Inc. A Delaware Corporation | UV activation of NH3 for III-N deposition |
KR101013492B1 (ko) | 2010-10-28 | 2011-02-10 | (주)세미머티리얼즈 | 화학기상증착장치 및 이의 제어방법 |
CN109103305B (zh) * | 2018-07-19 | 2019-12-03 | 南方科技大学 | 硫化锌/氮化镓异质结及其制备方法和应用 |
US10879464B2 (en) * | 2019-01-11 | 2020-12-29 | Microsoft Technology Licensing, Llc | Semiconductor and ferromagnetic insulator heterostructure |
KR20200104497A (ko) | 2019-02-27 | 2020-09-04 | 조승연 | 혈액 순환을 촉진하는 내복 |
US20210118640A1 (en) * | 2019-10-15 | 2021-04-22 | United States Department Of Energy | Co-desposition of cesium telluride photocathode and x-ray fluorescence controller co-deposition of cesium telluride photocathode |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0786683A (ja) * | 1993-09-10 | 1995-03-31 | Toshiba Corp | 半導体発光装置 |
JPH08162481A (ja) * | 1994-12-01 | 1996-06-21 | Nec Corp | 結晶成長方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2544378B2 (ja) * | 1987-03-25 | 1996-10-16 | 株式会社日立製作所 | 光半導体装置 |
US5291507A (en) * | 1991-05-15 | 1994-03-01 | Minnesota Mining And Manufacturing Company | Blue-green laser diode |
US6001669A (en) * | 1991-09-09 | 1999-12-14 | Philips Electronics North America Corporation | Method for producing II-VI compound semiconductor epitaxial layers having low defects |
US5319219A (en) * | 1992-05-22 | 1994-06-07 | Minnesota Mining And Manufacturing Company | Single quantum well II-VI laser diode without cladding |
JPH0613314A (ja) * | 1992-06-24 | 1994-01-21 | Matsushita Electric Ind Co Ltd | 半導体エピタキシャル成長方法 |
JP3217490B2 (ja) * | 1992-09-29 | 2001-10-09 | 株式会社東芝 | 半導体発光装置 |
US5306386A (en) * | 1993-04-06 | 1994-04-26 | Hughes Aircraft Company | Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates |
JPH077218A (ja) * | 1993-06-15 | 1995-01-10 | Sony Corp | 半導体レーザ |
US5399521A (en) * | 1993-10-08 | 1995-03-21 | Texas Instruments Incorporated | Method of semiconductor layer growth by MBE |
US5492080A (en) * | 1993-12-27 | 1996-02-20 | Matsushita Electric Industrial Co., Ltd. | Crystal-growth method and semiconductor device production method using the crystal-growth method |
-
1995
- 1995-12-13 US US08/571,607 patent/US5879962A/en not_active Expired - Lifetime
-
1996
- 1996-12-05 KR KR10-1998-0704416A patent/KR100469112B1/ko not_active IP Right Cessation
- 1996-12-05 CN CN961989556A patent/CN1218409C/zh not_active Expired - Lifetime
- 1996-12-05 EP EP96945577A patent/EP0875078B1/en not_active Expired - Lifetime
- 1996-12-05 WO PCT/US1996/019284 patent/WO1997022153A1/en active IP Right Grant
- 1996-12-05 AU AU16836/97A patent/AU1683697A/en not_active Abandoned
- 1996-12-05 JP JP09522092A patent/JP2000501889A/ja not_active Withdrawn
- 1996-12-05 DE DE69633460T patent/DE69633460T2/de not_active Expired - Lifetime
- 1996-12-09 MY MYPI96005166A patent/MY112348A/en unknown
-
1997
- 1997-02-01 TW TW086101215A patent/TW324864B/zh not_active IP Right Cessation
-
2007
- 2007-09-07 JP JP2007233233A patent/JP4705079B2/ja not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0786683A (ja) * | 1993-09-10 | 1995-03-31 | Toshiba Corp | 半導体発光装置 |
JPH08162481A (ja) * | 1994-12-01 | 1996-06-21 | Nec Corp | 結晶成長方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2000501889A (ja) | 2000-02-15 |
CN1218409C (zh) | 2005-09-07 |
KR100469112B1 (ko) | 2005-07-07 |
MY112348A (en) | 2001-05-31 |
DE69633460D1 (de) | 2004-10-28 |
CN1209218A (zh) | 1999-02-24 |
DE69633460T2 (de) | 2005-10-13 |
JP2008004962A (ja) | 2008-01-10 |
WO1997022153A1 (en) | 1997-06-19 |
US5879962A (en) | 1999-03-09 |
TW324864B (en) | 1998-01-11 |
AU1683697A (en) | 1997-07-03 |
KR19990072104A (ko) | 1999-09-27 |
EP0875078B1 (en) | 2004-09-22 |
EP0875078A1 (en) | 1998-11-04 |
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