DE69633460D1 - Herstellungsverfahren für iii-v/ii-vi-halbleiter-grenzfläche - Google Patents

Herstellungsverfahren für iii-v/ii-vi-halbleiter-grenzfläche

Info

Publication number
DE69633460D1
DE69633460D1 DE69633460T DE69633460T DE69633460D1 DE 69633460 D1 DE69633460 D1 DE 69633460D1 DE 69633460 T DE69633460 T DE 69633460T DE 69633460 T DE69633460 T DE 69633460T DE 69633460 D1 DE69633460 D1 DE 69633460D1
Authority
DE
Germany
Prior art keywords
iii
manufacturing process
semiconductor interface
semiconductor
interface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633460T
Other languages
English (en)
Other versions
DE69633460T2 (de
Inventor
M Depuydt
Supratik Guha
A Haase
Kwok-Keung Law
J Miller
Bor-Jen Wu
M Gaines
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
3M Co
Original Assignee
Koninklijke Philips Electronics NV
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Minnesota Mining and Manufacturing Co filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69633460D1 publication Critical patent/DE69633460D1/de
Publication of DE69633460T2 publication Critical patent/DE69633460T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
    • H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02477—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
DE69633460T 1995-12-13 1996-12-05 Herstellungsverfahren für iii-v/ii-vi-halbleiter-grenzfläche Expired - Lifetime DE69633460T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/571,607 US5879962A (en) 1995-12-13 1995-12-13 III-V/II-VI Semiconductor interface fabrication method
US571607 1995-12-13
PCT/US1996/019284 WO1997022153A1 (en) 1995-12-13 1996-12-05 Iii-v/ii-vi semiconductor interface fabrication method

Publications (2)

Publication Number Publication Date
DE69633460D1 true DE69633460D1 (de) 2004-10-28
DE69633460T2 DE69633460T2 (de) 2005-10-13

Family

ID=24284372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633460T Expired - Lifetime DE69633460T2 (de) 1995-12-13 1996-12-05 Herstellungsverfahren für iii-v/ii-vi-halbleiter-grenzfläche

Country Status (10)

Country Link
US (1) US5879962A (de)
EP (1) EP0875078B1 (de)
JP (2) JP2000501889A (de)
KR (1) KR100469112B1 (de)
CN (1) CN1218409C (de)
AU (1) AU1683697A (de)
DE (1) DE69633460T2 (de)
MY (1) MY112348A (de)
TW (1) TW324864B (de)
WO (1) WO1997022153A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6409883B1 (en) 1999-04-16 2002-06-25 Kimberly-Clark Worldwide, Inc. Methods of making fiber bundles and fibrous structures
US7968362B2 (en) 2001-03-27 2011-06-28 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
US6946238B2 (en) * 2001-06-29 2005-09-20 3M Innovative Properties Company Process for fabrication of optical waveguides
US6873638B2 (en) 2001-06-29 2005-03-29 3M Innovative Properties Company Laser diode chip with waveguide
US6849874B2 (en) * 2001-10-26 2005-02-01 Cree, Inc. Minimizing degradation of SiC bipolar semiconductor devices
US7259084B2 (en) * 2003-07-28 2007-08-21 National Chiao-Tung University Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
US20070256635A1 (en) * 2006-05-02 2007-11-08 Applied Materials, Inc. A Delaware Corporation UV activation of NH3 for III-N deposition
KR101013492B1 (ko) 2010-10-28 2011-02-10 (주)세미머티리얼즈 화학기상증착장치 및 이의 제어방법
CN109103305B (zh) * 2018-07-19 2019-12-03 南方科技大学 硫化锌/氮化镓异质结及其制备方法和应用
US10879464B2 (en) * 2019-01-11 2020-12-29 Microsoft Technology Licensing, Llc Semiconductor and ferromagnetic insulator heterostructure
KR20200104497A (ko) 2019-02-27 2020-09-04 조승연 혈액 순환을 촉진하는 내복
US20210118640A1 (en) * 2019-10-15 2021-04-22 United States Department Of Energy Co-desposition of cesium telluride photocathode and x-ray fluorescence controller co-deposition of cesium telluride photocathode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
US5291507A (en) * 1991-05-15 1994-03-01 Minnesota Mining And Manufacturing Company Blue-green laser diode
US6001669A (en) * 1991-09-09 1999-12-14 Philips Electronics North America Corporation Method for producing II-VI compound semiconductor epitaxial layers having low defects
US5319219A (en) * 1992-05-22 1994-06-07 Minnesota Mining And Manufacturing Company Single quantum well II-VI laser diode without cladding
JPH0613314A (ja) * 1992-06-24 1994-01-21 Matsushita Electric Ind Co Ltd 半導体エピタキシャル成長方法
JP3217490B2 (ja) * 1992-09-29 2001-10-09 株式会社東芝 半導体発光装置
JP3222652B2 (ja) * 1993-09-10 2001-10-29 株式会社東芝 半導体発光装置
US5306386A (en) * 1993-04-06 1994-04-26 Hughes Aircraft Company Arsenic passivation for epitaxial deposition of ternary chalcogenide semiconductor films onto silicon substrates
JPH077218A (ja) * 1993-06-15 1995-01-10 Sony Corp 半導体レーザ
US5399521A (en) * 1993-10-08 1995-03-21 Texas Instruments Incorporated Method of semiconductor layer growth by MBE
US5492080A (en) * 1993-12-27 1996-02-20 Matsushita Electric Industrial Co., Ltd. Crystal-growth method and semiconductor device production method using the crystal-growth method
JPH08162481A (ja) * 1994-12-01 1996-06-21 Nec Corp 結晶成長方法

Also Published As

Publication number Publication date
WO1997022153A1 (en) 1997-06-19
MY112348A (en) 2001-05-31
EP0875078B1 (de) 2004-09-22
JP2000501889A (ja) 2000-02-15
KR100469112B1 (ko) 2005-07-07
JP4705079B2 (ja) 2011-06-22
AU1683697A (en) 1997-07-03
US5879962A (en) 1999-03-09
CN1209218A (zh) 1999-02-24
JP2008004962A (ja) 2008-01-10
CN1218409C (zh) 2005-09-07
DE69633460T2 (de) 2005-10-13
KR19990072104A (ko) 1999-09-27
TW324864B (en) 1998-01-11
EP0875078A1 (de) 1998-11-04

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