DE69507445D1 - Reinigungsverfahren für ein Halbleitersubstrat - Google Patents

Reinigungsverfahren für ein Halbleitersubstrat

Info

Publication number
DE69507445D1
DE69507445D1 DE69507445T DE69507445T DE69507445D1 DE 69507445 D1 DE69507445 D1 DE 69507445D1 DE 69507445 T DE69507445 T DE 69507445T DE 69507445 T DE69507445 T DE 69507445T DE 69507445 D1 DE69507445 D1 DE 69507445D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
cleaning method
cleaning
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69507445T
Other languages
English (en)
Other versions
DE69507445T2 (de
Inventor
Yuka Hayami
Miki T Suzuki
Hiroki Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69507445D1 publication Critical patent/DE69507445D1/de
Application granted granted Critical
Publication of DE69507445T2 publication Critical patent/DE69507445T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
DE69507445T 1994-12-19 1995-08-14 Reinigungsverfahren für ein Halbleitersubstrat Expired - Fee Related DE69507445T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6314392A JPH08172068A (ja) 1994-12-19 1994-12-19 半導体基板の洗浄方法及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69507445D1 true DE69507445D1 (de) 1999-03-04
DE69507445T2 DE69507445T2 (de) 1999-06-02

Family

ID=18052798

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69507445T Expired - Fee Related DE69507445T2 (de) 1994-12-19 1995-08-14 Reinigungsverfahren für ein Halbleitersubstrat

Country Status (6)

Country Link
US (1) US5795494A (de)
EP (1) EP0718872B1 (de)
JP (1) JPH08172068A (de)
KR (1) KR0185463B1 (de)
CN (1) CN1079579C (de)
DE (1) DE69507445T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3662111B2 (ja) * 1997-06-24 2005-06-22 アルプス電気株式会社 洗浄液の製造方法およびそのための装置
US6007406A (en) 1997-12-04 1999-12-28 Micron Technology, Inc. Polishing systems, methods of polishing substrates, and method of preparing liquids for semiconductor fabrication process
EP1310988B1 (de) * 2000-06-23 2010-05-26 Fujitsu Limited Verfahren zur herstellung eines halbleiterelement
JP4602540B2 (ja) * 2000-12-12 2010-12-22 オメガセミコン電子株式会社 基板処理装置
US8084406B2 (en) * 2007-12-14 2011-12-27 Lam Research Corporation Apparatus for particle removal by single-phase and two-phase media
JP2010117412A (ja) * 2008-11-11 2010-05-27 Shin-Etsu Chemical Co Ltd フォトマスク関連基板の洗浄方法
US8956463B2 (en) 2008-10-08 2015-02-17 Shin-Etsu Chemical Co., Ltd. Method for cleaning photomask-related substrate, cleaning method, and cleaning fluid supplying apparatus
JP2010117403A (ja) * 2008-11-11 2010-05-27 Shin-Etsu Chemical Co Ltd フォトマスク関連基板の洗浄方法
JP5871652B2 (ja) * 2012-02-23 2016-03-01 オルガノ株式会社 アルコール中の溶存酸素除去方法、アルコール供給装置並びに洗浄液供給装置
CN102728577B (zh) * 2012-06-21 2014-11-19 信义汽车部件（芜湖）有限公司 一种提高玻璃塑料附件表面张力的工艺方法
US9339853B2 (en) 2012-12-04 2016-05-17 The Boeing Company Surface materials for decontamination with decontaminants
US10190227B2 (en) * 2013-03-14 2019-01-29 Xtalic Corporation Articles comprising an electrodeposited aluminum alloys
JP2016164977A (ja) * 2015-02-27 2016-09-08 キヤノン株式会社 ナノインプリント用液体材料、ナノインプリント用液体材料の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、および電子部品の製造方法
JP6993885B2 (ja) 2018-01-15 2022-01-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN111599730A (zh) * 2020-06-22 2020-08-28 上海华力微电子有限公司 刻蚀液供给装置及方法
CN116435418B (zh) * 2023-06-13 2023-08-25 南昌凯捷半导体科技有限公司 一种590nm反极性LED外延片及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU843029A1 (ru) * 1979-04-16 1981-06-30 Предприятие П/Я А-3560 Устройство дл очистки поверхностипОлупРОВОдНиКОВыХ плАСТиН
US4722752A (en) * 1986-06-16 1988-02-02 Robert F. Orr Apparatus and method for rinsing and drying silicon wafers
JPH071761B2 (ja) * 1987-12-07 1995-01-11 松下電器産業株式会社 半導体基板の処理方法
JPH02164035A (ja) * 1988-12-19 1990-06-25 Nec Corp 半導体基板の洗浄方法
JPH03157927A (ja) * 1989-11-15 1991-07-05 Mitsubishi Electric Corp 半導体ウエハ乾燥方法
JPH04151835A (ja) * 1990-05-25 1992-05-25 Shimada Phys & Chem Ind Co Ltd 洗浄乾燥方法
JPH0440270A (ja) * 1990-06-01 1992-02-10 Miura Co Ltd 電子部品の洗浄方法
JPH04107922A (ja) * 1990-08-29 1992-04-09 Fujitsu Ltd 半導体洗浄液およびそれを用いた洗浄方法
JPH04124825A (ja) * 1990-09-14 1992-04-24 Sharp Corp 半導体ウエハの洗浄方法
JPH0653201A (ja) * 1992-07-27 1994-02-25 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体基板の表面形成法
KR960002763B1 (ko) * 1992-12-24 1996-02-26 금성일렉트론주식회사 반도체 세정방법 및 세정용액
DE4316096C1 (de) * 1993-05-13 1994-11-10 Wacker Chemitronic Verfahren zur naßchemischen Behandlung scheibenförmiger Werkstücke
US5464480A (en) * 1993-07-16 1995-11-07 Legacy Systems, Inc. Process and apparatus for the treatment of semiconductor wafers in a fluid

Also Published As

Publication number Publication date
EP0718872A1 (de) 1996-06-26
US5795494A (en) 1998-08-18
KR0185463B1 (ko) 1999-04-15
JPH08172068A (ja) 1996-07-02
CN1127424A (zh) 1996-07-24
KR960026331A (ko) 1996-07-22
CN1079579C (zh) 2002-02-20
EP0718872B1 (de) 1999-01-20
DE69507445T2 (de) 1999-06-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee