DE69711942D1 - Be-HALTIGE BLAU-GRÜNE II-VI LASERDIODEN - Google Patents

Be-HALTIGE BLAU-GRÜNE II-VI LASERDIODEN

Info

Publication number
DE69711942D1
DE69711942D1 DE69711942T DE69711942T DE69711942D1 DE 69711942 D1 DE69711942 D1 DE 69711942D1 DE 69711942 T DE69711942 T DE 69711942T DE 69711942 T DE69711942 T DE 69711942T DE 69711942 D1 DE69711942 D1 DE 69711942D1
Authority
DE
Germany
Prior art keywords
green
laser diodes
contain blue
blue
contain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69711942T
Other languages
English (en)
Other versions
DE69711942T2 (de
Inventor
Thomas J Miller
Michael A Haase
Paul F Baude
Michael D Pashley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
3M Co
Original Assignee
Koninklijke Philips Electronics NV
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Minnesota Mining and Manufacturing Co filed Critical Koninklijke Philips Electronics NV
Publication of DE69711942D1 publication Critical patent/DE69711942D1/de
Application granted granted Critical
Publication of DE69711942T2 publication Critical patent/DE69711942T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/02—MBE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69711942T 1996-06-27 1997-01-16 Be-HALTIGE BLAU-GRÜNE II-VI LASERDIODEN Expired - Lifetime DE69711942T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US2089396P 1996-06-27 1996-06-27
US08/726,618 US5818859A (en) 1996-06-27 1996-10-07 Be-containing II-VI blue-green laser diodes
PCT/US1997/000612 WO1997050159A1 (en) 1996-06-27 1997-01-16 Be-CONTAINING II-VI BLUE-GREEN LASER DIODES

Publications (2)

Publication Number Publication Date
DE69711942D1 true DE69711942D1 (de) 2002-05-16
DE69711942T2 DE69711942T2 (de) 2002-09-12

Family

ID=26694025

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69711942T Expired - Lifetime DE69711942T2 (de) 1996-06-27 1997-01-16 Be-HALTIGE BLAU-GRÜNE II-VI LASERDIODEN

Country Status (8)

Country Link
US (1) US5818859A (de)
EP (1) EP1016175B1 (de)
JP (2) JP4243350B2 (de)
AU (1) AU1534997A (de)
DE (1) DE69711942T2 (de)
MY (1) MY114337A (de)
TW (1) TW413959B (de)
WO (1) WO1997050159A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090637A (en) * 1997-02-13 2000-07-18 3M Innovative Properties Company Fabrication of II-VI semiconductor device with BeTe buffer layer
US6214678B1 (en) * 1997-05-21 2001-04-10 Hughes Electronics Corp Growth technique for low noise high electron mobility transistors by metal organic vapor phase epitaxy
DE19729186A1 (de) * 1997-07-08 1999-01-14 Siemens Ag Verfahren zum Herstellen eines II-VI-Halbleiter-Bauelements
US5974070A (en) * 1997-11-17 1999-10-26 3M Innovative Properties Company II-VI laser diode with facet degradation reduction structure
JP3692269B2 (ja) * 1999-01-29 2005-09-07 シャープ株式会社 半導体レーザ素子及びその製造方法
US7026653B2 (en) * 2004-01-27 2006-04-11 Lumileds Lighting, U.S., Llc Semiconductor light emitting devices including current spreading layers
JP4920344B2 (ja) * 2006-08-25 2012-04-18 株式会社日立製作所 半導体レーザ
CN102197551A (zh) * 2008-09-04 2011-09-21 3M创新有限公司 由gan ld光泵的散热器上式ⅱ-ⅵ族mqw vcsel
JP2012502471A (ja) * 2008-09-04 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー 光遮断構成要素を有する光源
JP2012502472A (ja) * 2008-09-04 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー 単色光源
US8518814B2 (en) 2011-12-02 2013-08-27 Northrop Grumman Systems Corporation Methods of fabrication of high-density laser diode stacks

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5327445A (en) * 1990-09-12 1994-07-05 The Furukawa Electric Co., Ltd. Quantum-well type semiconductor laser device
US5375134A (en) * 1991-02-21 1994-12-20 Sony Corporation Semiconductor light emitting device
CN1111840A (zh) * 1991-05-15 1995-11-15 明尼苏达州采矿制造公司 蓝-绿激光二极管的制造方法
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
US5406574A (en) * 1991-10-23 1995-04-11 Kabushiki Kaisha Toshiba Semiconductor laser device
DE69224054T2 (de) * 1992-02-19 1998-08-20 Sony Corp Halbleiterlaser
JPH06104533A (ja) * 1992-09-22 1994-04-15 Matsushita Electric Ind Co Ltd 青色発光素子およびその製造方法
US5422902A (en) * 1993-07-02 1995-06-06 Philips Electronics North America Corporation BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors
JP3239550B2 (ja) * 1993-08-30 2001-12-17 ソニー株式会社 半導体レーザ
JPH07232999A (ja) * 1994-02-21 1995-09-05 Kobe Steel Ltd ＺｎＳｅ系単結晶及びその製造方法
JP3233330B2 (ja) * 1994-08-23 2001-11-26 松下電器産業株式会社 半導体発光素子及びその製造方法
JPH0870155A (ja) * 1994-08-29 1996-03-12 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子
JPH0897518A (ja) * 1994-09-28 1996-04-12 Sony Corp 半導体発光素子
JP2586349B2 (ja) * 1994-11-17 1997-02-26 日本電気株式会社 半導体発光素子
DE19542241C2 (de) * 1995-11-13 2003-01-09 Siemens Ag Optoelektronisches Bauelement in II-VI-Halbleitermaterial

Also Published As

Publication number Publication date
EP1016175A1 (de) 2000-07-05
TW413959B (en) 2000-12-01
AU1534997A (en) 1998-01-14
US5818859A (en) 1998-10-06
JP4243350B2 (ja) 2009-03-25
MY114337A (en) 2002-09-30
WO1997050159A1 (en) 1997-12-31
EP1016175B1 (de) 2002-04-10
JP2007324607A (ja) 2007-12-13
JP2000513146A (ja) 2000-10-03
DE69711942T2 (de) 2002-09-12

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Legal Events

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8364 No opposition during term of opposition