JP4242490B2 - フォトレジスト組成物を調整する方法 - Google Patents

フォトレジスト組成物を調整する方法 Download PDF

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Publication number
JP4242490B2
JP4242490B2 JP34775098A JP34775098A JP4242490B2 JP 4242490 B2 JP4242490 B2 JP 4242490B2 JP 34775098 A JP34775098 A JP 34775098A JP 34775098 A JP34775098 A JP 34775098A JP 4242490 B2 JP4242490 B2 JP 4242490B2
Authority
JP
Japan
Prior art keywords
resin binder
reaction
photoresist
added
solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP34775098A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11249308A (ja
JPH11249308A5 (enExample
Inventor
ロジャー・エフ・シンタ
ユーデイ・クマール
ジョージ・ダブリュー・オルスラ
ジェイムズ・ファーヘイ
ウィリアム・アール・ブランズボルド
ウー−ソン・ファン
アーマッド・ディー・カトナーニ
ロナルド・ダブリュー・ナンズ
マームード・エム・コージャスタ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
DuPont Electronic Materials International LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC, DuPont Electronic Materials International LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JPH11249308A publication Critical patent/JPH11249308A/ja
Publication of JPH11249308A5 publication Critical patent/JPH11249308A5/ja
Application granted granted Critical
Publication of JP4242490B2 publication Critical patent/JP4242490B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
JP34775098A 1997-10-30 1998-10-30 フォトレジスト組成物を調整する方法 Expired - Lifetime JP4242490B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/961,112 US5919597A (en) 1997-10-30 1997-10-30 Methods for preparing photoresist compositions
US961112 1997-10-30

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2008202035A Division JP4531829B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法
JP2008202040A Division JP4354511B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法

Publications (3)

Publication Number Publication Date
JPH11249308A JPH11249308A (ja) 1999-09-17
JPH11249308A5 JPH11249308A5 (enExample) 2005-10-27
JP4242490B2 true JP4242490B2 (ja) 2009-03-25

Family

ID=25504074

Family Applications (3)

Application Number Title Priority Date Filing Date
JP34775098A Expired - Lifetime JP4242490B2 (ja) 1997-10-30 1998-10-30 フォトレジスト組成物を調整する方法
JP2008202035A Expired - Lifetime JP4531829B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法
JP2008202040A Expired - Lifetime JP4354511B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2008202035A Expired - Lifetime JP4531829B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法
JP2008202040A Expired - Lifetime JP4354511B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法

Country Status (4)

Country Link
US (1) US5919597A (enExample)
JP (3) JP4242490B2 (enExample)
KR (1) KR100601737B1 (enExample)
TW (1) TW588224B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0942329B1 (en) * 1997-09-22 2002-11-13 Clariant Finance (BVI) Limited Novel process for preparing resists
US6759483B2 (en) 1998-05-05 2004-07-06 Chemfirst Electronic Materials L.P. Preparation of homo-, co- and terpolymers of substituted styrenes
US6420088B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US6787611B2 (en) * 2000-06-27 2004-09-07 Chemfirst Electronic Materials L.P. Purification means
US6593431B2 (en) 2000-06-27 2003-07-15 Chemfirst Electronic Materials Lp Purification means
US6641971B2 (en) 2001-06-15 2003-11-04 International Business Machines Corporation Resist compositions comprising silyl ketals and methods of use thereof
US6864324B2 (en) 2002-04-19 2005-03-08 Chem First Electronic Materials L.P. Anhydrous, liquid phase process for preparing hydroxyl containing polymers of enhanced purity
US7029821B2 (en) * 2003-02-11 2006-04-18 Rohm And Haas Electronic Materials Llc Photoresist and organic antireflective coating compositions
US7090963B2 (en) * 2003-06-25 2006-08-15 International Business Machines Corporation Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging
JP4363161B2 (ja) * 2003-10-28 2009-11-11 Ｊｓｒ株式会社 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法
US20050106494A1 (en) * 2003-11-19 2005-05-19 International Business Machines Corporation Silicon-containing resist systems with cyclic ketal protecting groups
US7820369B2 (en) * 2003-12-04 2010-10-26 International Business Machines Corporation Method for patterning a low activation energy photoresist
US7193023B2 (en) * 2003-12-04 2007-03-20 International Business Machines Corporation Low activation energy photoresists
CN1914558A (zh) * 2004-02-11 2007-02-14 国际商业机器公司 混合碱用于提高铬或敏感基材上的图案化抗蚀剂分布的应用
DE102004063416A1 (de) 2004-12-23 2006-07-06 Az Electronic Materials (Germany) Gmbh Verfahren zur Herstellung einer Photoresistlösung
US7354692B2 (en) * 2005-05-09 2008-04-08 International Business Machines Corporation Photoresists for visible light imaging
US7358029B2 (en) * 2005-09-29 2008-04-15 International Business Machines Corporation Low activation energy dissolution modification agents for photoresist applications
US7300741B2 (en) * 2006-04-25 2007-11-27 International Business Machines Corporation Advanced chemically amplified resist for sub 30 nm dense feature resolution
JP5374012B2 (ja) * 2006-06-02 2013-12-25 三井化学東セロ株式会社 不飽和カルボン酸変性ビニルアルコール系重合体の製造方法及びこれを用いたガスバリア性膜若しくはガスバリア性積層体
JP6737891B2 (ja) * 2016-09-15 2020-08-12 富士フイルム株式会社 有機溶剤の精製方法および有機溶剤の精製装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216111A (en) * 1986-12-23 1993-06-01 Shipley Company Inc. Aromatic novolak resins and blends
JP2715480B2 (ja) * 1988-10-13 1998-02-18 住友化学工業株式会社 ポジ型レジスト用組成物
JP2645587B2 (ja) * 1989-03-29 1997-08-25 富士写真フイルム株式会社 微細パターン形成材料及び微細パターン形成方法
JP2715548B2 (ja) * 1989-05-26 1998-02-18 日本油脂株式会社 接着剤組成物およびその製造方法
JPH0748805B2 (ja) * 1990-05-28 1995-05-24 三菱電機株式会社 オート・トラッキング・モニタのｓ字補正コンデンサ切替装置
KR920005774B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 반도체용 포지티브 포토레지스트 조성물
KR920005780B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 내열성이 우수한 포토레지스트 조성물
JPH04328555A (ja) * 1991-04-26 1992-11-17 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
DE4125260A1 (de) * 1991-07-31 1993-02-04 Hoechst Ag Oligomere verbindungen mit saeurelabilen schutzgruppen und damit hergestelltes positiv arbeitendes strahlungsempfindliches gemisch
JP3094652B2 (ja) * 1992-05-18 2000-10-03 住友化学工業株式会社 ポジ型レジスト組成物
CA2106231A1 (en) * 1993-09-15 1995-03-16 Sambasivan Venkat Eswaran Negative photoresist and a process therefor
JPH07199464A (ja) * 1993-12-28 1995-08-04 Mitsubishi Chem Corp ポジ型感光性組成物
DE69500616T2 (de) * 1994-12-20 1998-01-02 Ocg Microelectronics Materials Verfahren zur Herstellung von teilgeschützten Phenolharzen
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound
EP0942329B1 (en) * 1997-09-22 2002-11-13 Clariant Finance (BVI) Limited Novel process for preparing resists

Also Published As

Publication number Publication date
JP2008276265A (ja) 2008-11-13
JP2008276264A (ja) 2008-11-13
JP4354511B2 (ja) 2009-10-28
US5919597A (en) 1999-07-06
TW588224B (en) 2004-05-21
KR100601737B1 (ko) 2006-12-01
JPH11249308A (ja) 1999-09-17
JP4531829B2 (ja) 2010-08-25
KR19990037508A (ko) 1999-05-25

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