KR100601737B1 - 감광성 내식막 조성물의 제조방법 - Google Patents

감광성 내식막 조성물의 제조방법 Download PDF

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Publication number
KR100601737B1
KR100601737B1 KR1019980046022A KR19980046022A KR100601737B1 KR 100601737 B1 KR100601737 B1 KR 100601737B1 KR 1019980046022 A KR1019980046022 A KR 1019980046022A KR 19980046022 A KR19980046022 A KR 19980046022A KR 100601737 B1 KR100601737 B1 KR 100601737B1
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KR
South Korea
Prior art keywords
resin binder
photoresist
solvent
photosensitive resist
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980046022A
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English (en)
Korean (ko)
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KR19990037508A (ko
Inventor
로저 에프 신타
우데이 쿠마
죠지 더블유 오슐라
제임스 티 파헤이
윌리엄 알 브런스볼드
우-송 후앙
아메드 디 켓나니
로날드 더블유 누네스
마무드 엠 코쟈스테
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 인터내셔널 비지네스 머신즈 코포레이션, 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 filed Critical 인터내셔널 비지네스 머신즈 코포레이션
Publication of KR19990037508A publication Critical patent/KR19990037508A/ko
Application granted granted Critical
Publication of KR100601737B1 publication Critical patent/KR100601737B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Processes Of Treating Macromolecular Substances (AREA)
KR1019980046022A 1997-10-30 1998-10-30 감광성 내식막 조성물의 제조방법 Expired - Fee Related KR100601737B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/961,112 1997-10-30
US08/961,112 US5919597A (en) 1997-10-30 1997-10-30 Methods for preparing photoresist compositions
US08/961,112 1997-10-30

Publications (2)

Publication Number Publication Date
KR19990037508A KR19990037508A (ko) 1999-05-25
KR100601737B1 true KR100601737B1 (ko) 2006-12-01

Family

ID=25504074

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980046022A Expired - Fee Related KR100601737B1 (ko) 1997-10-30 1998-10-30 감광성 내식막 조성물의 제조방법

Country Status (4)

Country Link
US (1) US5919597A (enExample)
JP (3) JP4242490B2 (enExample)
KR (1) KR100601737B1 (enExample)
TW (1) TW588224B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0942329B1 (en) * 1997-09-22 2002-11-13 Clariant Finance (BVI) Limited Novel process for preparing resists
US6759483B2 (en) 1998-05-05 2004-07-06 Chemfirst Electronic Materials L.P. Preparation of homo-, co- and terpolymers of substituted styrenes
US6420088B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US6787611B2 (en) * 2000-06-27 2004-09-07 Chemfirst Electronic Materials L.P. Purification means
US6593431B2 (en) 2000-06-27 2003-07-15 Chemfirst Electronic Materials Lp Purification means
US6641971B2 (en) 2001-06-15 2003-11-04 International Business Machines Corporation Resist compositions comprising silyl ketals and methods of use thereof
US6864324B2 (en) 2002-04-19 2005-03-08 Chem First Electronic Materials L.P. Anhydrous, liquid phase process for preparing hydroxyl containing polymers of enhanced purity
US7029821B2 (en) * 2003-02-11 2006-04-18 Rohm And Haas Electronic Materials Llc Photoresist and organic antireflective coating compositions
US7090963B2 (en) * 2003-06-25 2006-08-15 International Business Machines Corporation Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging
JP4363161B2 (ja) * 2003-10-28 2009-11-11 Ｊｓｒ株式会社 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法
US20050106494A1 (en) * 2003-11-19 2005-05-19 International Business Machines Corporation Silicon-containing resist systems with cyclic ketal protecting groups
US7820369B2 (en) * 2003-12-04 2010-10-26 International Business Machines Corporation Method for patterning a low activation energy photoresist
US7193023B2 (en) * 2003-12-04 2007-03-20 International Business Machines Corporation Low activation energy photoresists
CN1914558A (zh) * 2004-02-11 2007-02-14 国际商业机器公司 混合碱用于提高铬或敏感基材上的图案化抗蚀剂分布的应用
DE102004063416A1 (de) 2004-12-23 2006-07-06 Az Electronic Materials (Germany) Gmbh Verfahren zur Herstellung einer Photoresistlösung
US7354692B2 (en) * 2005-05-09 2008-04-08 International Business Machines Corporation Photoresists for visible light imaging
US7358029B2 (en) * 2005-09-29 2008-04-15 International Business Machines Corporation Low activation energy dissolution modification agents for photoresist applications
US7300741B2 (en) * 2006-04-25 2007-11-27 International Business Machines Corporation Advanced chemically amplified resist for sub 30 nm dense feature resolution
JP5374012B2 (ja) * 2006-06-02 2013-12-25 三井化学東セロ株式会社 不飽和カルボン酸変性ビニルアルコール系重合体の製造方法及びこれを用いたガスバリア性膜若しくはガスバリア性積層体
JP6737891B2 (ja) * 2016-09-15 2020-08-12 富士フイルム株式会社 有機溶剤の精製方法および有機溶剤の精製装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920005780A (ko) * 1990-05-28 1992-04-03 시기 모리야 자동 트래킹 모니터의 s자 보정 콘덴서 전환장치
KR920005780B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 내열성이 우수한 포토레지스트 조성물
KR920005774B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 반도체용 포지티브 포토레지스트 조성물
JPH07128854A (ja) * 1993-09-15 1995-05-19 Natl Res Dev Corp ネガホトレジスト及びその製造方法
JPH07199464A (ja) * 1993-12-28 1995-08-04 Mitsubishi Chem Corp ポジ型感光性組成物
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US5216111A (en) * 1986-12-23 1993-06-01 Shipley Company Inc. Aromatic novolak resins and blends
JP2715480B2 (ja) * 1988-10-13 1998-02-18 住友化学工業株式会社 ポジ型レジスト用組成物
JP2645587B2 (ja) * 1989-03-29 1997-08-25 富士写真フイルム株式会社 微細パターン形成材料及び微細パターン形成方法
JP2715548B2 (ja) * 1989-05-26 1998-02-18 日本油脂株式会社 接着剤組成物およびその製造方法
JPH04328555A (ja) * 1991-04-26 1992-11-17 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
DE4125260A1 (de) * 1991-07-31 1993-02-04 Hoechst Ag Oligomere verbindungen mit saeurelabilen schutzgruppen und damit hergestelltes positiv arbeitendes strahlungsempfindliches gemisch
JP3094652B2 (ja) * 1992-05-18 2000-10-03 住友化学工業株式会社 ポジ型レジスト組成物
DE69500616T2 (de) * 1994-12-20 1998-01-02 Ocg Microelectronics Materials Verfahren zur Herstellung von teilgeschützten Phenolharzen
EP0942329B1 (en) * 1997-09-22 2002-11-13 Clariant Finance (BVI) Limited Novel process for preparing resists

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920005780A (ko) * 1990-05-28 1992-04-03 시기 모리야 자동 트래킹 모니터의 s자 보정 콘덴서 전환장치
KR920005780B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 내열성이 우수한 포토레지스트 조성물
KR920005774B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 반도체용 포지티브 포토레지스트 조성물
JPH07128854A (ja) * 1993-09-15 1995-05-19 Natl Res Dev Corp ネガホトレジスト及びその製造方法
JPH07199464A (ja) * 1993-12-28 1995-08-04 Mitsubishi Chem Corp ポジ型感光性組成物
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound

Also Published As

Publication number Publication date
JP2008276265A (ja) 2008-11-13
JP2008276264A (ja) 2008-11-13
JP4354511B2 (ja) 2009-10-28
US5919597A (en) 1999-07-06
TW588224B (en) 2004-05-21
JP4242490B2 (ja) 2009-03-25
JPH11249308A (ja) 1999-09-17
JP4531829B2 (ja) 2010-08-25
KR19990037508A (ko) 1999-05-25

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Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20110711

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PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301