JPH11249308A5 - - Google Patents

Info

Publication number
JPH11249308A5
JPH11249308A5 JP1998347750A JP34775098A JPH11249308A5 JP H11249308 A5 JPH11249308 A5 JP H11249308A5 JP 1998347750 A JP1998347750 A JP 1998347750A JP 34775098 A JP34775098 A JP 34775098A JP H11249308 A5 JPH11249308 A5 JP H11249308A5
Authority
JP
Japan
Prior art keywords
resin binder
solvent
mixture
photoresist
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998347750A
Other languages
English (en)
Japanese (ja)
Other versions
JP4242490B2 (ja
JPH11249308A (ja
Filing date
Publication date
Priority claimed from US08/961,112 external-priority patent/US5919597A/en
Application filed filed Critical
Publication of JPH11249308A publication Critical patent/JPH11249308A/ja
Publication of JPH11249308A5 publication Critical patent/JPH11249308A5/ja
Application granted granted Critical
Publication of JP4242490B2 publication Critical patent/JP4242490B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP34775098A 1997-10-30 1998-10-30 フォトレジスト組成物を調整する方法 Expired - Lifetime JP4242490B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/961,112 US5919597A (en) 1997-10-30 1997-10-30 Methods for preparing photoresist compositions
US961112 1997-10-30

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2008202035A Division JP4531829B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法
JP2008202040A Division JP4354511B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法

Publications (3)

Publication Number Publication Date
JPH11249308A JPH11249308A (ja) 1999-09-17
JPH11249308A5 true JPH11249308A5 (enExample) 2005-10-27
JP4242490B2 JP4242490B2 (ja) 2009-03-25

Family

ID=25504074

Family Applications (3)

Application Number Title Priority Date Filing Date
JP34775098A Expired - Lifetime JP4242490B2 (ja) 1997-10-30 1998-10-30 フォトレジスト組成物を調整する方法
JP2008202035A Expired - Lifetime JP4531829B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法
JP2008202040A Expired - Lifetime JP4354511B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2008202035A Expired - Lifetime JP4531829B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法
JP2008202040A Expired - Lifetime JP4354511B2 (ja) 1997-10-30 2008-08-05 フォトレジスト組成物を調製する方法

Country Status (4)

Country Link
US (1) US5919597A (enExample)
JP (3) JP4242490B2 (enExample)
KR (1) KR100601737B1 (enExample)
TW (1) TW588224B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0942329B1 (en) * 1997-09-22 2002-11-13 Clariant Finance (BVI) Limited Novel process for preparing resists
US6759483B2 (en) 1998-05-05 2004-07-06 Chemfirst Electronic Materials L.P. Preparation of homo-, co- and terpolymers of substituted styrenes
US6420088B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US6787611B2 (en) * 2000-06-27 2004-09-07 Chemfirst Electronic Materials L.P. Purification means
US6593431B2 (en) 2000-06-27 2003-07-15 Chemfirst Electronic Materials Lp Purification means
US6641971B2 (en) 2001-06-15 2003-11-04 International Business Machines Corporation Resist compositions comprising silyl ketals and methods of use thereof
US6864324B2 (en) 2002-04-19 2005-03-08 Chem First Electronic Materials L.P. Anhydrous, liquid phase process for preparing hydroxyl containing polymers of enhanced purity
US7029821B2 (en) * 2003-02-11 2006-04-18 Rohm And Haas Electronic Materials Llc Photoresist and organic antireflective coating compositions
US7090963B2 (en) * 2003-06-25 2006-08-15 International Business Machines Corporation Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging
JP4363161B2 (ja) * 2003-10-28 2009-11-11 Ｊｓｒ株式会社 感放射線性樹脂組成物、並びに層間絶縁膜およびマイクロレンズの形成方法
US20050106494A1 (en) * 2003-11-19 2005-05-19 International Business Machines Corporation Silicon-containing resist systems with cyclic ketal protecting groups
US7820369B2 (en) * 2003-12-04 2010-10-26 International Business Machines Corporation Method for patterning a low activation energy photoresist
US7193023B2 (en) * 2003-12-04 2007-03-20 International Business Machines Corporation Low activation energy photoresists
CN1914558A (zh) * 2004-02-11 2007-02-14 国际商业机器公司 混合碱用于提高铬或敏感基材上的图案化抗蚀剂分布的应用
DE102004063416A1 (de) 2004-12-23 2006-07-06 Az Electronic Materials (Germany) Gmbh Verfahren zur Herstellung einer Photoresistlösung
US7354692B2 (en) * 2005-05-09 2008-04-08 International Business Machines Corporation Photoresists for visible light imaging
US7358029B2 (en) * 2005-09-29 2008-04-15 International Business Machines Corporation Low activation energy dissolution modification agents for photoresist applications
US7300741B2 (en) * 2006-04-25 2007-11-27 International Business Machines Corporation Advanced chemically amplified resist for sub 30 nm dense feature resolution
JP5374012B2 (ja) * 2006-06-02 2013-12-25 三井化学東セロ株式会社 不飽和カルボン酸変性ビニルアルコール系重合体の製造方法及びこれを用いたガスバリア性膜若しくはガスバリア性積層体
JP6737891B2 (ja) * 2016-09-15 2020-08-12 富士フイルム株式会社 有機溶剤の精製方法および有機溶剤の精製装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216111A (en) * 1986-12-23 1993-06-01 Shipley Company Inc. Aromatic novolak resins and blends
JP2715480B2 (ja) * 1988-10-13 1998-02-18 住友化学工業株式会社 ポジ型レジスト用組成物
JP2645587B2 (ja) * 1989-03-29 1997-08-25 富士写真フイルム株式会社 微細パターン形成材料及び微細パターン形成方法
JP2715548B2 (ja) * 1989-05-26 1998-02-18 日本油脂株式会社 接着剤組成物およびその製造方法
JPH0748805B2 (ja) * 1990-05-28 1995-05-24 三菱電機株式会社 オート・トラッキング・モニタのｓ字補正コンデンサ切替装置
KR920005774B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 반도체용 포지티브 포토레지스트 조성물
KR920005780B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 내열성이 우수한 포토레지스트 조성물
JPH04328555A (ja) * 1991-04-26 1992-11-17 Fuji Photo Film Co Ltd ポジ型フオトレジスト組成物
DE4125260A1 (de) * 1991-07-31 1993-02-04 Hoechst Ag Oligomere verbindungen mit saeurelabilen schutzgruppen und damit hergestelltes positiv arbeitendes strahlungsempfindliches gemisch
JP3094652B2 (ja) * 1992-05-18 2000-10-03 住友化学工業株式会社 ポジ型レジスト組成物
CA2106231A1 (en) * 1993-09-15 1995-03-16 Sambasivan Venkat Eswaran Negative photoresist and a process therefor
JPH07199464A (ja) * 1993-12-28 1995-08-04 Mitsubishi Chem Corp ポジ型感光性組成物
DE69500616T2 (de) * 1994-12-20 1998-01-02 Ocg Microelectronics Materials Verfahren zur Herstellung von teilgeschützten Phenolharzen
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound
EP0942329B1 (en) * 1997-09-22 2002-11-13 Clariant Finance (BVI) Limited Novel process for preparing resists

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