JP4237439B2 - 基体の研磨又は平坦化方法 - Google Patents

基体の研磨又は平坦化方法 Download PDF

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Publication number
JP4237439B2
JP4237439B2 JP2001545482A JP2001545482A JP4237439B2 JP 4237439 B2 JP4237439 B2 JP 4237439B2 JP 2001545482 A JP2001545482 A JP 2001545482A JP 2001545482 A JP2001545482 A JP 2001545482A JP 4237439 B2 JP4237439 B2 JP 4237439B2
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JP
Japan
Prior art keywords
metal oxide
substrate
polishing
metal
hydroxyl group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001545482A
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English (en)
Japanese (ja)
Other versions
JP2004500708A5 (https=
JP2004500708A (ja
Inventor
エー． ダークセン，ジェイムズ
ダブリュ． ボールドリッジ，デイビッド
エス． グローバー，ゴータム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2004500708A publication Critical patent/JP2004500708A/ja
Publication of JP2004500708A5 publication Critical patent/JP2004500708A5/ja
Application granted granted Critical
Publication of JP4237439B2 publication Critical patent/JP4237439B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
JP2001545482A 1999-12-17 2000-12-15 基体の研磨又は平坦化方法 Expired - Lifetime JP4237439B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17254099P 1999-12-17 1999-12-17
PCT/US2000/034058 WO2001044402A1 (en) 1999-12-17 2000-12-15 Method of polishing or planarizing a substrate

Publications (3)

Publication Number Publication Date
JP2004500708A JP2004500708A (ja) 2004-01-08
JP2004500708A5 JP2004500708A5 (https=) 2005-04-07
JP4237439B2 true JP4237439B2 (ja) 2009-03-11

Family

ID=22628143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001545482A Expired - Lifetime JP4237439B2 (ja) 1999-12-17 2000-12-15 基体の研磨又は平坦化方法

Country Status (11)

Country Link
US (1) US6872328B2 (https=)
EP (1) EP1242557B8 (https=)
JP (1) JP4237439B2 (https=)
KR (1) KR100563166B1 (https=)
CN (1) CN1196760C (https=)
AT (1) ATE307859T1 (https=)
AU (1) AU2266301A (https=)
DE (1) DE60023549T2 (https=)
IL (1) IL150186A0 (https=)
TW (1) TWI263671B (https=)
WO (1) WO2001044402A1 (https=)

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CN101058713B (zh) 2001-10-31 2011-02-09 日立化成工业株式会社 研磨液及研磨方法
US7524346B2 (en) * 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
US20030162399A1 (en) * 2002-02-22 2003-08-28 University Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
US6716771B2 (en) * 2002-04-09 2004-04-06 Intel Corporation Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface
US6953532B2 (en) * 2003-03-06 2005-10-11 Cabot Microelectronics Corporation Method of polishing a lanthanide substrate
US7968465B2 (en) * 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
JP4012180B2 (ja) * 2004-08-06 2007-11-21 株式会社東芝 Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
US20060089095A1 (en) 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20080283502A1 (en) * 2006-05-26 2008-11-20 Kevin Moeggenborg Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates
JP2009224771A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224767A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333741B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333743B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028078A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333739B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010016344A (ja) * 2008-02-18 2010-01-21 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333742B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
KR20100123678A (ko) * 2008-02-18 2010-11-24 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법
JP2010028077A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028079A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010034497A (ja) * 2008-02-18 2010-02-12 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333740B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333744B2 (ja) * 2008-02-18 2013-11-06 Ｊｓｒ株式会社 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
KR101563023B1 (ko) * 2008-02-18 2015-10-23 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법
JP2010041027A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
CN102358824B (zh) * 2011-07-29 2013-08-21 清华大学 一种用于硬盘盘基片超精密表面制造的抛光组合物
CN102358825B (zh) * 2011-08-05 2013-08-21 清华大学 一种用于蓝宝石晶片的抛光组合物
US9803109B2 (en) * 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
CN106752969A (zh) * 2016-11-22 2017-05-31 启东市清清蔬果农地股份专业合作社 一种铝合金外壳的抛光液
CN108527012A (zh) * 2018-05-21 2018-09-14 浙江工业大学 一种利用液态金属抛光液进行大平面抛光的装置

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JPS61136909A (ja) * 1984-12-04 1986-06-24 Mitsubishi Chem Ind Ltd 無水ケイ酸の水分散液組成物
JPH01317155A (ja) * 1988-03-04 1989-12-21 Mitsubishi Kasei Corp セラミック成形体の製造法
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP3303544B2 (ja) * 1994-07-27 2002-07-22 ソニー株式会社 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US5664990A (en) * 1996-07-29 1997-09-09 Integrated Process Equipment Corp. Slurry recycling in CMP apparatus
JPH10166258A (ja) * 1996-12-06 1998-06-23 Tadahiro Omi 研磨剤組成物
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6294105B1 (en) * 1997-12-23 2001-09-25 International Business Machines Corporation Chemical mechanical polishing slurry and method for polishing metal/oxide layers
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IL149987A0 (en) * 1999-12-07 2002-12-01 Cabot Microelectronics Corp Chemical-mechanical polishing method

Also Published As

Publication number Publication date
WO2001044402A1 (en) 2001-06-21
ATE307859T1 (de) 2005-11-15
JP2004500708A (ja) 2004-01-08
IL150186A0 (en) 2002-12-01
US20020076932A1 (en) 2002-06-20
AU2266301A (en) 2001-06-25
DE60023549D1 (de) 2005-12-01
CN1409749A (zh) 2003-04-09
DE60023549T2 (de) 2006-04-20
CN1196760C (zh) 2005-04-13
KR20020070321A (ko) 2002-09-05
EP1242557B1 (en) 2005-10-26
EP1242557A1 (en) 2002-09-25
TWI263671B (en) 2006-10-11
US6872328B2 (en) 2005-03-29
EP1242557B8 (en) 2006-02-01
KR100563166B1 (ko) 2006-03-27

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