JP2004500708A5 - - Google Patents

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Publication number
JP2004500708A5
JP2004500708A5 JP2001545482A JP2001545482A JP2004500708A5 JP 2004500708 A5 JP2004500708 A5 JP 2004500708A5 JP 2001545482 A JP2001545482 A JP 2001545482A JP 2001545482 A JP2001545482 A JP 2001545482A JP 2004500708 A5 JP2004500708 A5 JP 2004500708A5
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JP
Japan
Prior art keywords
metal oxide
substrate
polishing
abrasive
metal
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JP2001545482A
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English (en)
Japanese (ja)
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JP2004500708A (ja
JP4237439B2 (ja
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Priority claimed from PCT/US2000/034058 external-priority patent/WO2001044402A1/en
Publication of JP2004500708A publication Critical patent/JP2004500708A/ja
Publication of JP2004500708A5 publication Critical patent/JP2004500708A5/ja
Application granted granted Critical
Publication of JP4237439B2 publication Critical patent/JP4237439B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2001545482A 1999-12-17 2000-12-15 基体の研磨又は平坦化方法 Expired - Lifetime JP4237439B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17254099P 1999-12-17 1999-12-17
PCT/US2000/034058 WO2001044402A1 (en) 1999-12-17 2000-12-15 Method of polishing or planarizing a substrate

Publications (3)

Publication Number Publication Date
JP2004500708A JP2004500708A (ja) 2004-01-08
JP2004500708A5 true JP2004500708A5 (https=) 2005-04-07
JP4237439B2 JP4237439B2 (ja) 2009-03-11

Family

ID=22628143

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001545482A Expired - Lifetime JP4237439B2 (ja) 1999-12-17 2000-12-15 基体の研磨又は平坦化方法

Country Status (11)

Country Link
US (1) US6872328B2 (https=)
EP (1) EP1242557B8 (https=)
JP (1) JP4237439B2 (https=)
KR (1) KR100563166B1 (https=)
CN (1) CN1196760C (https=)
AT (1) ATE307859T1 (https=)
AU (1) AU2266301A (https=)
DE (1) DE60023549T2 (https=)
IL (1) IL150186A0 (https=)
TW (1) TWI263671B (https=)
WO (1) WO2001044402A1 (https=)

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US6656241B1 (en) * 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
US20030003747A1 (en) * 2001-06-29 2003-01-02 Jae Hong Kim Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same
US7416680B2 (en) * 2001-10-12 2008-08-26 International Business Machines Corporation Self-cleaning colloidal slurry composition and process for finishing a surface of a substrate
CN101058713B (zh) 2001-10-31 2011-02-09 日立化成工业株式会社 研磨液及研磨方法
US7524346B2 (en) * 2002-01-25 2009-04-28 Dupont Air Products Nanomaterials Llc Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
US20030162399A1 (en) * 2002-02-22 2003-08-28 University Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
US6716771B2 (en) * 2002-04-09 2004-04-06 Intel Corporation Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface
US6953532B2 (en) * 2003-03-06 2005-10-11 Cabot Microelectronics Corporation Method of polishing a lanthanide substrate
US7968465B2 (en) * 2003-08-14 2011-06-28 Dupont Air Products Nanomaterials Llc Periodic acid compositions for polishing ruthenium/low K substrates
JP4012180B2 (ja) * 2004-08-06 2007-11-21 株式会社東芝 Cmp用スラリー、研磨方法、および半導体装置の製造方法
US20060089095A1 (en) 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20080283502A1 (en) * 2006-05-26 2008-11-20 Kevin Moeggenborg Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates
JP2009224771A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2009224767A (ja) * 2008-02-18 2009-10-01 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333741B2 (ja) * 2008-02-18 2013-11-06 Jsr株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333743B2 (ja) * 2008-02-18 2013-11-06 Jsr株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028078A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333739B2 (ja) * 2008-02-18 2013-11-06 Jsr株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010016344A (ja) * 2008-02-18 2010-01-21 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333742B2 (ja) * 2008-02-18 2013-11-06 Jsr株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
KR20100123678A (ko) * 2008-02-18 2010-11-24 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법
JP2010028077A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010028079A (ja) * 2008-02-18 2010-02-04 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP2010034497A (ja) * 2008-02-18 2010-02-12 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333740B2 (ja) * 2008-02-18 2013-11-06 Jsr株式会社 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
JP5333744B2 (ja) * 2008-02-18 2013-11-06 Jsr株式会社 化学機械研磨用水系分散体、化学機械研磨方法および化学機械研磨用水系分散体の製造方法
KR101563023B1 (ko) * 2008-02-18 2015-10-23 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법
JP2010041027A (ja) * 2008-02-18 2010-02-18 Jsr Corp 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法
CN102358824B (zh) * 2011-07-29 2013-08-21 清华大学 一种用于硬盘盘基片超精密表面制造的抛光组合物
CN102358825B (zh) * 2011-08-05 2013-08-21 清华大学 一种用于蓝宝石晶片的抛光组合物
US9803109B2 (en) * 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
CN106752969A (zh) * 2016-11-22 2017-05-31 启东市清清蔬果农地股份专业合作社 一种铝合金外壳的抛光液
CN108527012A (zh) * 2018-05-21 2018-09-14 浙江工业大学 一种利用液态金属抛光液进行大平面抛光的装置

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JPS61136909A (ja) * 1984-12-04 1986-06-24 Mitsubishi Chem Ind Ltd 無水ケイ酸の水分散液組成物
JPH01317155A (ja) * 1988-03-04 1989-12-21 Mitsubishi Kasei Corp セラミック成形体の製造法
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
US5352277A (en) * 1988-12-12 1994-10-04 E. I. Du Pont De Nemours & Company Final polishing composition
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP3303544B2 (ja) * 1994-07-27 2002-07-22 ソニー株式会社 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
US5664990A (en) * 1996-07-29 1997-09-09 Integrated Process Equipment Corp. Slurry recycling in CMP apparatus
JPH10166258A (ja) * 1996-12-06 1998-06-23 Tadahiro Omi 研磨剤組成物
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6294105B1 (en) * 1997-12-23 2001-09-25 International Business Machines Corporation Chemical mechanical polishing slurry and method for polishing metal/oxide layers
WO1999064527A1 (en) 1998-06-10 1999-12-16 Rodel Holdings, Inc. Composition and method for polishing in metal cmp
IL149987A0 (en) * 1999-12-07 2002-12-01 Cabot Microelectronics Corp Chemical-mechanical polishing method

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