TWI263671B - Method of polishing or planarizing a substrate - Google Patents
Method of polishing or planarizing a substrate Download PDFInfo
- Publication number
- TWI263671B TWI263671B TW089126982A TW89126982A TWI263671B TW I263671 B TWI263671 B TW I263671B TW 089126982 A TW089126982 A TW 089126982A TW 89126982 A TW89126982 A TW 89126982A TW I263671 B TWI263671 B TW I263671B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- metal oxide
- metal
- oxide
- polishing
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 238000007517 polishing process Methods 0.000 title claims abstract description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 45
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 45
- 239000000203 mixture Substances 0.000 claims abstract description 33
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 17
- 239000002905 metal composite material Substances 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 150000004696 coordination complex Chemical class 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 235000003392 Curcuma domestica Nutrition 0.000 claims 1
- 244000008991 Curcuma longa Species 0.000 claims 1
- YLRULQVEVPDFPD-UHFFFAOYSA-N [O-2].[Y+3].[O-2].[Y+3] Chemical compound [O-2].[Y+3].[O-2].[Y+3] YLRULQVEVPDFPD-UHFFFAOYSA-N 0.000 claims 1
- 235000003373 curcuma longa Nutrition 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 235000013976 turmeric Nutrition 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 15
- 239000002184 metal Substances 0.000 abstract description 15
- 238000005498 polishing Methods 0.000 description 18
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 239000002002 slurry Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- -1 phosphonate compounds Chemical class 0.000 description 3
- 239000002689 soil Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 3
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000002079 cooperative effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000012925 reference material Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000282994 Cervidae Species 0.000 description 1
- 235000005979 Citrus limon Nutrition 0.000 description 1
- 244000131522 Citrus pyriformis Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- HEFNNWSXXWATRW-UHFFFAOYSA-N Ibuprofen Chemical compound CC(C)CC1=CC=C(C(C)C(O)=O)C=C1 HEFNNWSXXWATRW-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001413 amino acids Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000008365 aqueous carrier Substances 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 125000001246 bromo group Chemical class Br* 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000003841 chloride salts Chemical class 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- ZJXZSIYSNXKHEA-UHFFFAOYSA-N ethyl dihydrogen phosphate Chemical compound CCOP(O)(O)=O ZJXZSIYSNXKHEA-UHFFFAOYSA-N 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 229940116364 hard fat Drugs 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 150000004701 malic acid derivatives Chemical class 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 239000000276 potassium ferrocyanide Substances 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical compound OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical class OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
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Description
1263671 A7 B7
發明背景 '用於拋光或平面化包含金屬，金屬氧化物或金屬複合物 I基材 < 組合物爲此技藝所習知。此類組合物典型包含水 合：之磨耗劑’爲習知之拋光漿液。此拋光漿液通常被施 、土材表面，其係以經漿液組合物飽和之拋光墊接觸表 面。典型磨耗劑材料包含二氧化石夕，氧化鮮，氧化铭，氧 =及氧化。例如，美國專利第5,527,423號敘述一種化 子機械拋光至屬層之方法，其係使表面與包含在水性載媒 中之金屬氧化物粒子接觸。 在抛光或平面化包含金屬，金屬氧化物或金屬複合物之 土材之、.且口物方面，傳統抛光组合物有時並不能完全令人 滿意。特別的是，抛光於漿之研磨材料可黏附於被抛光或 :面化之基材，如此使研磨材料在抛光及後續清潔後留在 基材表面。使用此類抛光淤漿於化學機械拋光，由於殘留 於漿沈積，會造成表承品質不佳。因爲基材之功能與其表 面平面化及沒有顆粒沈積有直接關聯，❹會在基材表面 留下高品質抛光及最小量殘留於漿 目前仍需要-種展現所欲抛光或平面：率㈣致性及 :去效率，但於後續抛光或平面化能減少或避免殘留研磨 w:枓〈拋光或平面化基材之方法。本發明尋求提供此種 万法。本發明這些及其優點在本發明於本文所提供敎述中 4- (請先閱讀背面之注意事項為填寫本頁) 穿-------訂·
經濟部智慧財產局員工消費合作社印製
本紙張尺度適用中國國家標準（CNS)A4規格（21Gx 297公爱y 1263671 A7 五 、發明說明（3 B7 、::、烏），至屬碳化物（例如碳化碎及碳化鎢）及鎳-磷。 ^要、及成，或主要完全由矽組成之基材適不適合作爲本發 =万法〈基材。本發明特別適合用於平面化或拋光記憶體 $，碟，金屬（例如貴重金屬），ILD層，積體電路，半導體 二：電子機械系統，鐵電學，磁頭，聚合薄膜及低與高： 电常數薄膜。 #金屬氧化物磨耗劑可爲可作爲磨耗劑之任何合適的金屬 氧产物口適之金屬氧化物包含氧化鋁，氧化矽，氧化铈 ’氧化锆，氧化鍺，氧化鎂及其組合。較佳者，金屬氧化 片磨耗』爲氧化碎。更佳者，金屬氧化物磨耗劑爲煙霧 氧化秒^。 金屬氧化物磨耗劑之特徵爲總表面經基密度低到足以 ，屬氧化物磨耗劑黏附至被拋光之基材，特別是在後續 者後*會超過令人滿意之水平（例如，實質上或完全避 :屬氧化物磨耗劑黏附至基材)。所欲總表面羥基密度小 特殊金屬氧化物磨耗劑之總表面經基密度飽和水平。在把 和時，以氧切爲π，其總表㈣基密度約爲每咖2約47 至5個羥基。 . · 金屬氧化物磨耗劑血别乏結·料Λ ^ , —2 糾/、歪心特敛馬總表面羥基密度不大於 :Ά 4個么基。車父佳者’金屬氧化物磨耗劑之特徵爲 面經基密度不大於每nm2約3個#基。更佳者，金屬氧 物磨耗劑之特徵爲總表面羥基密度不大於每·2約2 8個 基，例如每nm2約2至2.8個羥基。最佳者，金屬氧化物磨 叙特徵爲總表面録密度不大於每nm2約25個幾基。 頁 化 使清 免 於
總 化Μ 耗 金 -6- 尺ΐ適財關家標準(CNS)A4規格（21〇 297公釐） 1263671 A7 B7 五、發明說明（5 正丁％或二級丁醇。較佳者，酯化處理係在介於所用醇類 滞點及350°C之溫度之氣相中進行。 任何合適之溫度可用於對金屬氧化物磨耗劑進行脱水縮 合。金屬氧化物磨耗劑較佳係在至少約500°C (例如約550至 6 0 0 C )概度下加熱。金屬氧化物磨耗劑可在更高溫度下， 例如至少800 C或甚至至少i〇〇〇°c下加熱。 本=明方法所用組合物，除了金屬氧化物磨耗劑外，包 括液態載劑。任何合適液態载劑可用於金屬氧化物磨耗劑 組合物。載劑係用於便利金屬氧化物磨耗劑應用於被拋光 或平面化之合適基材之表面。較佳之液態載劑係爲水。 金屬氧化物磨耗劑組合物之pH値約爲7或小於7。此類pH 抑制會金屬氧化物磨耗劑之水解。在大於約7時，金 屬氧化物磨耗劑在合理時間内被再水解，以致於總表面 基密度最終達到飽和點（即每111112約4·7至5個羥基）。因此， 若總表面錢密度小於飽和點之金屬氧化物磨^劑组合物 在某些時間點遇到較高仲値，金屬氧化物 =密度會在不欲情況下增加，所以希望在製觸氧： 物磨耗你j組合物之全释中維持ρΗ値約爲7或小於7。 金屬氧化物磨耗劑組合物較佳之ρΗ値約爲6戈小於6 如約5至6。更佳者，該組合物之ρΗ値約爲5或小於;:： 約4至5。此種相對低之ρΗ値不會產生作用而減少全屬氧化 物磨耗劑（總表面經基密度，而是會維持金屬氧 劑之減少總表面羥基密度维持一段顯著時間， =耗 氧化物磨耗劑組合物使用於拋光或平面化 》=在金屬 乃床之前之儲存 -8 - 本紙張尺度_巾關家標準（CNS)A4規格⑵〇 X 297^17 (請先閱讀背面之注意事寫本頁) 裝·.!---·---訂--------- 爹！ 1263671 A7 B7 五、發明說明（6 :二:金屬氧化物磨耗劑也可以經化學處理以抑制金氧化 物&耗劑組合物在儲存期間之水解。 、金屬氧化物磨耗劑組合物之也可視需要以任何合 、弋加以凋整，例如藉添加ρΗ調整劑至組合物。人適之 ΡΗ調整劑包括，例如鹼，如氫氧化_，氫氧化銨，：酸納 及”混合物，以及酸，例如礦物酸（例如硝酸及硫酸）及有 機酸（例如醋酸，檸酸檬，丙二酸，琥拍酸，酒石酸及草酸 經濟部智慧財產局員工消費合作社印製 金屬氧化物磨耗劑組合物選用地再包括一或多種其他添 加劑。此類添加劑包括界面活性劑（例如陽離子界面活性劑 ’陰離子界面活性劑，非離子界面活性劑，兩性界面活性 劑，氟化界面活性劑，及其混合物），聚合安定劑或其他界 面活性分散劑（例如磷酸，有機酸，氧化錫及膦酸鹽化合物 )’ pH緩衝劑（例如磷酸鉀），及拋光加速劑如觸媒，硝酸鹽 ，硫酸鹽，自化物（包括氟化物，氯化物，溴化物及碘化物 )，含羧酸鹽，羥基，磺酸，及/或膦酸基之化合物，二_、 三-、多及聚羧酸及鹽（例如酒石酸及酒石酸鹽，蘋果酸及 蘋果酸鹽，丙二酸及丙二酸鹽，葡萄酸及葡萄酸鹽，檸檬 酸及檸檬酸鹽，g大酸及酜酸鹽，鄰苯二輸，焦掊酸，掊酸 及捂酸鹽，單寧酸及單寧酸鹽），含胺化合物（例如一級， 一級’二級及四級胺及胺基酸）’過氧化物’南破酸及鹽， 過溴酸及鹽，過氣酸及鹽，過硼酸及鹽，碘酸及鹽，過I孟 酸鹽，氰鐵酸鉀，氣酸鹽，過碳酸鹽，過硫酸鹽，溴酸鹽 ，鉻酸鹽，卿化合物及其混合物）。 -9 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）
1263671 五、發明說明（7 本^有引用參考資料’包括專利，專利中請案及公 ，併局參考資料。 雖然本發明係 .,„ 滅凋歧佳具體實施例之方式敘述，對受 知此技術人士，可# 4白 木較佳具月豆見施例之蠻仆/鹿 ，且本發明可以太、a j <又化係頜而易知y 户斤述，本發明勿扭仏士 & 者力以見她0據j： 已括所有包括在如以下申二主 斤 之本發明精神及範圍之改良。 明專利範圍所定義 (請先閲讀背面之注意事寫本頁) 裝-------訂----------
經濟部智慧財產局員工消費合作社印製 本纸張尺度適用中國國家標準（cns)a4規格（21〇χ 297公釐） 5 /十. Ά ο -申背嘴**斯1 —_ ~11^丨>、丨心 案 號 類 別 089126982 (以上各襴由本局填註） 1263671 Α4 x*r 中 月) f|專利説明書 人 中 文 抛光或平面化基材之方法 英 文
METHOD OF POLISHING OR PLANARIZING A SUBSTRATE 姓 名 國 籍 1. 詹姆士 A.德森 JAMESA.DIRKSEN 2. 大衛 W.保瑞基 DAVID W. BOLDRIDGE 3. 高坦 S.葛洛夫 GAUTAM S. GROVER 均美國 m 住、居所 裝 1.美國伊利諾州奥斯威格市亞士力路225號 2·美國伊利諾州奥斯威格市威索路455號 3 ·美國伊利諾州歐拉市海岸線街925號 訂 國 籍 三、申請人 f事務％ 美商卡博特微電子公司
CABOT MICROELECTRONICS CORPORATION 美國 美國伊利諾州歐洛拉市康蒙斯路870號
H·卡洛伯斯丁 H. CAROL BERNSTEIN
1263 67第 1( 089126982號專利申請案 中文說明書替換頁(93年7月） A7 B7 五、發明説明（2 會更明顯。 發明概要 本發明係提供一種抛光或平面化基材之方法，其包含以 含金屬氧化物磨耗劑及液體載劑之組合物磨耗包含金屬、金 屬氧化物、金屬複合物或其混合物之基材之至少一部份表面 ，其中組合物之pH約為7或以下且金屬氧化物磨耗劑之總表 面羥基密度不高於每nm2約3個羥基。 發明詳述 本發明係提供一種拋光或平面化基材之方法。該方法包 含使基材與金屬氧化物磨耗劑組合物接觸，藉著金屬氧化物 磨耗劑相對於基材之運動而磨耗包至少一部份基材表面。此 類接觸及磨耗可藉任何合適技術予以進行。例如，金屬氧化 物磨耗劑組合物可藉由使用拋光塾而施用於基材表面，及用 於磨耗至少一部份基材表面。 基材包含金屬、金屬氧化物、金屬複合物或其混合物。 基材可包含，主要係由以下組成，或由任何合適金屬組成 。合適金屬包含，例如，銅，銘，鈇，鎮，金，始，银， 釕及其組合（例如合金或混合物）。較佳者，基材金屬為鶴 。基材也可包含，主要係由以下組成，或由任何合適金屬 氧化物組成。合適的金屬氧化物包含，例如，氧化铭，氧 化矽，二氧化鈦，氧化鈽，氧化錘，氧化鍺，氧化鎂及其 組合。較佳者，基材之金屬氧化物為氧化矽。此外，基材 可包含，主要係由以下組成，或由任何合適金屬複化物組 成。合適的金屬複合物包含，例如金屬氮化物（例如，氮化 5- 本紙張尺度適用中國國家標準(CNS) A4規格（210 X 297公釐） Ι2630^^89126982號專利申請案 中文說明書替換頁(93年7月） 五、發明説明（4 屬氧化物磨耗劑之特徵為總表面經基密度 2.5個經基：總表面陶度亦可不大於W約2個： 料，1至職基’或甚至不大於WH固經基：：如 了一 至屬虱化物磨耗劑之總表面輕基穷产 可精任何合適方法予以定量分析。 土山度 具備前述總表面經某矣库、 合宜之方法加以製備；如入t屬氧化物磨耗劑可藉任何 化物製備之直接⑪果及m 化物純劑可為金屬氧 择,, 果及/或進行後處理以減少總表面羥基穷 = 總表面禮基密度之合宜方法包括，例 ： 面羥基與偶合劑反應，（11)以 （）'.心表 水縮合。製備具所欲總表❹=:表面_行脫 万法在美國專利第4,664,679號中有記載。 逗耗^ 二劑可用於減少金屬氧化物磨耗劑之表面 二;：合劑包括，例如"垸偶蝴”基三 ，基錢或Μ基二錢幻，料合師卩W 铭 二=)人，：機欽偶合劑(即異丙基-三異硬脂繼幻 用任何人·ϋ >步 ~甲土缔乳乙基磷酸鹽）。可使 用：：.㈣理偶合劑之方法，例 。再者，偶合劑處理可藉任何人適方丨4^一戈乳相處理 金屬氧化物磨耗劑中之碳含量，而加以評;:广素分析 ^:適^^可用於減少金屬氧化物磨耗劑之總表面 或支鏈的和1'包括’例如，具1至1_碳原子之直鏈 戈支鏈飽…醇’例如甲醇，乙醇，正丙醇，異丙醇， G張尺度 X 297公釐）
Claims (1)
- I263m 戈l:26982號專利申請案 · i文申;.請專利範圍替換本(93年7月）申請專利範圍 8 8 8 8 ABCD • 一種拋光或平面化基材之方法，其包各& 劑及液體載劑纟組合物磨純含鶴 °乳化珍磨和 矣石廿； 〜卷对 < 至少一部份 表面’其中組合物之 為4至6，且氧 γ4 、 一 虱亿矽磨耗劑之總表 四！基密度不高於每nm2中3個羥基。 根據申凊專利範圍第1項之方法立中 A〆 币/、万凌具中虱化矽磨耗劑係煙 務氧化石夕。 3. 根據:料利範圍第項之方法，其中總表面獲基密 度不咼於每nm2中2.8個羥基。 4. ，據^請專利範圍第3項之方法，纟中總表面經基密度不 南於每nm2中2.5個羥基。 5. 根據申請專利範圍第1或2項之方法，其中基材進一步包 括金屬氧化物。 6. 根據申請專利範圍第5項之方法，其中基材之金屬氧化物 係選自氧化鋁，氧化矽，氧化鈦，氧化鈽，氧化锆’氧 化鍺’氧化鎂及組合之組群。 7·根據申請專利範圍第6項之方法，其中基材之金屬氧化物 係為氧化碎。 8. 根據申請專利範圍第1或2項之方法，其中基材進一步包 括金屬複合物。 9. 根據申請專利範圍第8項之方法，其中基材之金屬複合物 係、自由氮化欽’氮化鶴及鎳-鱗所組成之群。297公釐）
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| US6953532B2 (en) * | 2003-03-06 | 2005-10-11 | Cabot Microelectronics Corporation | Method of polishing a lanthanide substrate |
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| WO2001041973A2 (en) * | 1999-12-07 | 2001-06-14 | Cabot Microelectronics Corporation | Chemical-mechanical polishing method |
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2000
- 2000-12-15 IL IL15018600A patent/IL150186A0/xx unknown
- 2000-12-15 WO PCT/US2000/034058 patent/WO2001044402A1/en active IP Right Grant
- 2000-12-15 EP EP00986423A patent/EP1242557B8/en not_active Expired - Lifetime
- 2000-12-15 JP JP2001545482A patent/JP4237439B2/ja not_active Expired - Lifetime
- 2000-12-15 US US09/737,905 patent/US6872328B2/en not_active Expired - Lifetime
- 2000-12-15 DE DE60023549T patent/DE60023549T2/de not_active Expired - Lifetime
- 2000-12-15 KR KR1020027007597A patent/KR100563166B1/ko active IP Right Grant
- 2000-12-15 CN CNB008170908A patent/CN1196760C/zh not_active Expired - Lifetime
- 2000-12-15 AT AT00986423T patent/ATE307859T1/de not_active IP Right Cessation
- 2000-12-15 AU AU22663/01A patent/AU2266301A/en not_active Abandoned
- 2000-12-16 TW TW089126982A patent/TWI263671B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP4237439B2 (ja) | 2009-03-11 |
| EP1242557B8 (en) | 2006-02-01 |
| US6872328B2 (en) | 2005-03-29 |
| WO2001044402A1 (en) | 2001-06-21 |
| DE60023549T2 (de) | 2006-04-20 |
| JP2004500708A (ja) | 2004-01-08 |
| ATE307859T1 (de) | 2005-11-15 |
| EP1242557B1 (en) | 2005-10-26 |
| DE60023549D1 (de) | 2005-12-01 |
| KR100563166B1 (ko) | 2006-03-27 |
| US20020076932A1 (en) | 2002-06-20 |
| CN1409749A (zh) | 2003-04-09 |
| CN1196760C (zh) | 2005-04-13 |
| IL150186A0 (en) | 2002-12-01 |
| EP1242557A1 (en) | 2002-09-25 |
| KR20020070321A (ko) | 2002-09-05 |
| AU2266301A (en) | 2001-06-25 |
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