CN1409749A - 抛光或平滑化基体的方法 - Google Patents
抛光或平滑化基体的方法 Download PDFInfo
- Publication number
- CN1409749A CN1409749A CN00817090A CN00817090A CN1409749A CN 1409749 A CN1409749 A CN 1409749A CN 00817090 A CN00817090 A CN 00817090A CN 00817090 A CN00817090 A CN 00817090A CN 1409749 A CN1409749 A CN 1409749A
- Authority
- CN
- China
- Prior art keywords
- metal oxide
- metal
- matrix
- oxide abrasive
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 39
- 238000005498 polishing Methods 0.000 title claims description 27
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 69
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 68
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 47
- 239000000203 mixture Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000002905 metal composite material Substances 0.000 claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 6
- 239000011159 matrix material Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 229960001866 silicon dioxide Drugs 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- -1 tungsten nitride Chemical class 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 5
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910021485 fumed silica Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 abstract description 2
- 239000002253 acid Substances 0.000 description 8
- 238000009499 grossing Methods 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 7
- 239000002002 slurry Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229940095064 tartrate Drugs 0.000 description 3
- 244000248349 Citrus limon Species 0.000 description 2
- 235000005979 Citrus limon Nutrition 0.000 description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229920002253 Tannate Polymers 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000032050 esterification Effects 0.000 description 2
- 238000005886 esterification reaction Methods 0.000 description 2
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- 241000282326 Felis catus Species 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-L Malonate Chemical compound [O-]C(=O)CC([O-])=O OFOBLEOULBTSOW-UHFFFAOYSA-L 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical group OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 1
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001413 amino acids Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 1
- 229940005991 chloric acid Drugs 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229940049920 malate Drugs 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229940093916 potassium phosphate Drugs 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- IKNCGYCHMGNBCP-UHFFFAOYSA-N propan-1-olate Chemical compound CCC[O-] IKNCGYCHMGNBCP-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
一种抛光或平滑化基体的方法，其包括用包含金属氧化物研磨剂及液体载体的组合物研磨包含金属、金属氧化物、金属复合物或其混合物的基体的至少一部分表面，其中组合物的pH约为7或以下且金属氧化物研磨剂的总表面羟基密度不高于每nm2约3个羟基。
Description
发明技术领域
本发明是关于一种抛光或平滑化基体，特别是半导体基体的方法。
发明背景
用于抛光或平滑化包含金属，金属氧化物或金属复合物的基体的组合物为本技术领域所熟知。此类组合物典型包含水溶液的研磨剂，称为抛光浆液。通常通过以经浆液组合物饱和的抛光垫接触表面将抛光浆液施用于基体表面。典型研磨剂材料包含二氧化硅，氧化铈，氧化铝，氧化锆及氧化锡。例如，美国专利第5,527,423号叙述一种化学-机械抛光金属层的方法，包括使表面与包含在含水介质中的金属氧化物颗粒的抛光浆液接触。
在抛光或平滑化包含金属，金属氧化物或金属复合物的基体的组合物情况下，传统抛光组合物有时并不能完全令人满意。特别的是，抛光浆液的研磨材料可粘附于被抛光或平滑化的基体，如此使研磨材料在抛光及后续清洗后留在基体表面。在化学-机械抛光中使用此类抛光浆液，由于残留浆液沉积，会造成表面品质差。因为基体的性能与其表面平滑化及没有颗粒沉积有直接关联，使用会在基体表面留下高品质抛光及最小量残留浆液颗粒是很重要的。
目前仍需要一种具有所需要的抛光或平滑化效率、一致性及除去效率，但于后续抛光或平滑化后在基体上残留研磨剂材料减至最少或消除的抛光或平滑化基体的方法。本发明寻求提供此种方法。本发明这些及其他优点在本文所提供本发明的说明中会更清楚。
发明概要
本发明是提供一种抛光或平滑化基体的方法，其包括用含有金属氧化物研磨剂及液体载体的组合物研磨包含金属、金属氧化物、金属复合物或其混合物的基体的至少一部分表面，其中组合物的pH约为7或以下且金属氧化物研磨剂的总表面羟基密度不高于每nm2约3个羟基。
发明详述
本发明是提供一种抛光或平滑化基体的方法。该方法包括通过金属氧化物研磨剂相对于基体的运动使基体与金属氧化物研磨剂组合物接触，并研磨至少一部分基体表面。此类接触及研磨可用任何合适技术进行。例如，金属氧化物研磨剂组合物可通过使用抛光垫而施用于基体表面，及用于研磨至少一部分基体表面。
所述基体包含金属、金属氧化物、金属复合物或其混合物。该基体可包含任何合适金属，主要是由任何合适金属组成，或由任何合适金属组成。合适金属包含，例如，铜，铝，钛，钨，金，铂，铱，钌及其组合(例如合金或混合物)。优选的基体金属为钨。基体也可包括任何合适金属氧化物，主要是由任何合适金属氧化物组成，或由任何合适金属氧化物组成。合适的金属氧化物包含，例如，氧化铝，二氧化硅，二氧化钛，氧化铈，氧化锆，氧化锗，氧化镁及其组合。优选的基体的金属氧化物为二氧化硅。此外，基体可包含任何合适金属复合物，主要是由任何合适金属复合物组成，或由任何合适金属复合物组成。合适的金属复合物包含，例如金属氮化物(例如，一氮化钛及氮化钨)，金属碳化物(例如碳化硅及碳化钨)及镍-磷。主要由硅组成，或完全由硅组成的基体不适合作为本发明方法的基体。本发明特别适合用于平滑化或抛光存储盘或硬盘，金属(例如贵重金属)，ILD层，集成电路，半导体，微电子机械系统，铁电学，磁头，聚合薄膜及低与高介电常数薄膜。
金属氧化物研磨剂可为可作为研磨剂的任何合适的金属氧化物。合适的金属氧化物包括氧化铝，二氧化硅，二氧化钛，氧化铈，氧化锆，氧化锗，氧化镁及其组合。优选的金属氧化物研磨剂为二氧化硅。更优选的金属氧化物研磨剂为热解法二氧化硅。
金属氧化物研磨剂的特征为总表面羟基密度低到足以使金属氧化物研磨剂粘附至被抛光的基体上，特别是在后续清洗后，不会超过令人满意的水平(例如，实质上或完全避免金属氧化物研磨剂粘附至基体上)。所需要的总表面羟基密度小于具体金属氧化物研磨剂的总表面羟基密度饱和水平。在饱和时，以二氧化硅为例，其总表面羟基密度约为每nm2约4.7至5个羟基。
金属氧化物研磨剂典型的特征为总表面羟基密度不大于每nm2约4个羟基。优选的金属氧化物研磨剂的特征为总表面羟基密度不大于每nm2约3个羟基。更优选的金属氧化物研磨剂的总表面羟基密度不大于每nm2约2.8个羟基，例如每nm2约2至2.8个羟基。最优选的金属氧化物研磨剂的总表面羟基密度不大于每nm2约2.5个羟基。所述总表面羟基密度可以不大于每nm2约2个羟基，例如每nm21至2个羟基，或甚至不大于每nm21个羟基，例如每nm20.7-1个羟基。金属氧化物研磨剂的总表面羟基密度可用任何合适方法定量分析。
具有前述总表面羟基密度的金属氧化物研磨剂可用任何合宜的方法制备。例如，所述金属氧化物研磨剂可为金属氧化物制备方法的直接结果及/或进行后处理以减少总表面羟基密度。减少总表面羟基密度的合宜方法包括，例如：(i)总表面羟基与偶合剂反应，(ii)用醇酯化总表面羟基，及(iii)用暴露于高温下(例如加热金属氧化物)使总表面羟基进行脱水缩合。制备具有所需要总表面羟基密度的金属氧化物研磨剂的方法在美国专利第4,664,679号中有记载。
任何合适的偶合剂可用于减少金属氧化物研磨剂的表面羟基密度。合适的偶合剂包括，例如硅烷偶合剂(即甲基三甲氧基硅烷或六甲基二硅烷基胺)，铝偶合剂(即乙酰烷氧基铝二异丙醇盐)，有机钛偶合剂(即异丙基-三异硬脂酰基钛酸酯)及有机磷偶合剂(即磷酸二丁基2-甲基烯丙氧乙基酯)。可使用偶合剂处理的任何合适方法，例如液相处理或气相处理方法。再者，偶合剂处理可用任何合适方法，如以有机元素分析金属氧化物研磨剂中的碳含量，而加以评估。
任何合适的醇可用于减少金属氧化物研磨剂的总表面羟基密度。合适醇包括，例如，具有1至18个碳原子的直链或支链饱和一元醇，例如甲醇，乙醇，正丙醇，异丙醇，正丁醇或叔丁醇。酯化处理优选在介于所用醇沸点-350℃的温度的气相中进行。
任何合适的温度可用于对金属氧化物研磨剂羟基的脱水缩合。金属氧化物研磨剂优选在至少约500℃(例如约550至600℃)温度下加热。金属氧化物研磨剂可在更高温度下，例如至少800℃或甚至至少1000℃下加热。
本发明方法所用组合物，除了金属氧化物研磨剂外，包括液态载体。任何合适液态载体可用于金属氧化物研磨剂组合物。载体是用于便利金属氧化物研磨剂应用于被抛光或平滑化的合适基体的表面。优选的液态载体是为水。
金属氧化物研磨剂组合物的pH值约为7或小于7。此pH抑制金属氧化物研磨剂的水解。在pH值大于约7时，金属氧化物研磨剂在合理时间内被再水解，以致于总表面羟基密度最终达到饱和点(即每nm2约4.7至5个羟基)。因此，若总表面羟基密度小于饱和点的金属氧化物研磨剂组合物在某些时间点遇到较高pH值，金属氧化物研磨剂的总表面羟基密度会在不希望地增加，所以希望在制备金属氧化物研磨剂组合物的全程中维持pH值约为7或小于7。
金属氧化物研磨剂组合物优选的pH值约为6或小于6，例如约5至6。该组合物的pH值便优选约为5或小于5，例如约4至5。此种相对低的pH值不会产生作用而减少金属氧化物研磨剂的总表面羟基密度，而是会使金属氧化物研磨剂的减少的总表面羟基密度维持一段显著时间，例如在金属氧化物研磨剂组合物使用于抛光或平滑化过程之前的储存期间。金属氧化物研磨剂也可以经化学处理以抑制金属氧化物研磨剂组合物在储存期间的水解。
金属氧化物研磨剂组合物的pH值也可视需要以任何合适方式加以调整，例如藉添加pH调整剂至组合物中。合适的pH调整剂包括，例如碱，如氢氧化钾，氢氧化铵，碳酸钠及其混合物，以及酸，例如无机酸(例如硝酸及硫酸)及有机酸(例如醋酸，柠酸檬，丙二酸，琥珀酸，酒石酸及草酸)。
金属氧化物研磨剂组合物任选地还包括一或多种其他添加剂。此类添加剂包括表面活性剂(例如阳离子表面活性剂，阴离子表面活性剂，非离子表面活性剂，两性表面活性剂，氟化表面活性剂，及其混合物)，聚合稳定剂或其他表面活性分散剂(例如磷酸，有机酸，氧化锡及膦酸酯化合物)，pH缓冲剂(例如磷酸钾)，及抛光加速剂如催化剂，氧化剂，鳌化剂或配位剂(例如金属，特别是铁，硝酸盐，硫酸盐，卤化物(包括氟化物，氯化物，溴化物及碘化物))，含羧基，羟基，磺基，及/或膦酸基的化合物，二-、三-、和多羧酸及盐(例如酒石酸及酒石酸盐，苹果酸及苹果酸盐，丙二酸及丙二酸盐，葡萄糖酸及葡萄糖酸盐，柠檬酸及柠檬酸盐，苯二甲酸及苯二甲酸盐，邻苯二酚，连苯三酚，鞣酸及鞣酸盐，单宁酸及单宁酸盐)，含胺化合物(例如伯胺，仲胺，叔胺及季胺及胺基酸)，过氧化物，高碘酸及盐，过溴酸及盐，过氯酸及盐，过硼酸及盐，碘酸及盐，permaganate，氰铁酸钾，氯酸盐，过碳酸盐，过硫酸盐，溴酸盐，铬酸盐，铈化合物及其混合物)。
本文所有引用参考文献，包括专利，专利申请案及出版物全部引入本说明书作为参考。
虽然本发明是以强调优选实施方案说明，本技术领域的专业人员对该优选实施方案的变化是显而易见的，且本发明可以本文中所具体说明的以外加以实施。因此，本发明包括所有包括在如以下权利要求所限定的本发明精神及范围内的所有改良。
Claims (16)
1.一种抛光或平滑化基体的方法，其包括用包含金属氧化物研磨剂及液体载体的组合物研磨包含金属、金属氧化物、金属复合物或其混合物的基体的至少一部分表面，其中组合物的pH约为7或以下且金属氧化物研磨剂的总表面羟基密度不高于每nm2约3个羟基。
2.权利要求1的方法，其中基体包括金属。
3.权利要求2的方法，其中基体的金属选自铜，铝，钛，钨，金，铂，铱，钌及其组合。
4.权利要求3的方法，其中基体的金属是为钨。
5.权利要求1的方法，其中基体包括金属氧化物。
6.权利要求5的方法，其中基体的金属氧化物选自氧化铝，二氧化硅，二氧化钛，氧化铈，氧化锆，氧化锗，氧化镁及其组合。
7.权利要求6的方法，其中基体的金属氧化物是为二氧化硅。
8.权利要求1的方法，其中基体包括金属复合物。
9.权利要求2的方法，其中基体的金属复合物是一氮化钛，氮化钨及镍-磷。
10.权利要求1-9任一项的方法，其中金属氧化物研磨剂选自氧化铝，二氧化硅，二氧化钛，氧化铈，氧化锆，氧化锗，氧化镁及其组合。
11.权利要求10的方法，其中金属氧化物研磨剂是二氧化硅。
12.权利要求11的方法，其中金属氧化物研磨剂是热解法二氧化硅。
13.权利要求1-12任一项的方法，其中总表面羟基密度不高于每nm2约2.8个羟基。
14.权利要求13的方法，其中总表面羟基密度不高于每nm2约2.5个羟基。
15.权利要求1-14任一项的方法，其中抛光组合物的pH约为6或小于6。
16.权利要求15的方法，其中抛光组合物的pH约为5或小于5。
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- 2000-12-15 DE DE60023549T patent/DE60023549T2/de not_active Expired - Lifetime
- 2000-12-15 IL IL15018600A patent/IL150186A0/xx unknown
- 2000-12-15 AU AU22663/01A patent/AU2266301A/en not_active Abandoned
- 2000-12-15 AT AT00986423T patent/ATE307859T1/de not_active IP Right Cessation
- 2000-12-15 EP EP00986423A patent/EP1242557B8/en not_active Expired - Lifetime
- 2000-12-15 CN CNB008170908A patent/CN1196760C/zh not_active Expired - Lifetime
- 2000-12-15 JP JP2001545482A patent/JP4237439B2/ja not_active Expired - Lifetime
- 2000-12-15 WO PCT/US2000/034058 patent/WO2001044402A1/en active IP Right Grant
- 2000-12-15 US US09/737,905 patent/US6872328B2/en not_active Expired - Lifetime
- 2000-12-15 KR KR1020027007597A patent/KR100563166B1/ko active IP Right Grant
- 2000-12-16 TW TW089126982A patent/TWI263671B/zh not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102358824A (zh) * | 2011-07-29 | 2012-02-22 | 清华大学 | 一种用于硬盘盘基片超精密表面制造的抛光组合物 |
| CN102358824B (zh) * | 2011-07-29 | 2013-08-21 | 清华大学 | 一种用于硬盘盘基片超精密表面制造的抛光组合物 |
| CN102358825A (zh) * | 2011-08-05 | 2012-02-22 | 清华大学 | 一种用于蓝宝石晶片的抛光组合物 |
| CN106752969A (zh) * | 2016-11-22 | 2017-05-31 | 启东市清清蔬果农地股份专业合作社 | 一种铝合金外壳的抛光液 |
| CN108527012A (zh) * | 2018-05-21 | 2018-09-14 | 浙江工业大学 | 一种利用液态金属抛光液进行大平面抛光的装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1242557B8 (en) | 2006-02-01 |
| JP4237439B2 (ja) | 2009-03-11 |
| KR100563166B1 (ko) | 2006-03-27 |
| CN1196760C (zh) | 2005-04-13 |
| DE60023549T2 (de) | 2006-04-20 |
| IL150186A0 (en) | 2002-12-01 |
| WO2001044402A1 (en) | 2001-06-21 |
| US6872328B2 (en) | 2005-03-29 |
| EP1242557B1 (en) | 2005-10-26 |
| ATE307859T1 (de) | 2005-11-15 |
| TWI263671B (en) | 2006-10-11 |
| AU2266301A (en) | 2001-06-25 |
| JP2004500708A (ja) | 2004-01-08 |
| KR20020070321A (ko) | 2002-09-05 |
| DE60023549D1 (de) | 2005-12-01 |
| US20020076932A1 (en) | 2002-06-20 |
| EP1242557A1 (en) | 2002-09-25 |
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