JP4216491B2 - α−ＳｉＣウェハの製造方法 - Google Patents

α−ＳｉＣウェハの製造方法 Download PDF

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Publication number
JP4216491B2
JP4216491B2 JP2001157668A JP2001157668A JP4216491B2 JP 4216491 B2 JP4216491 B2 JP 4216491B2 JP 2001157668 A JP2001157668 A JP 2001157668A JP 2001157668 A JP2001157668 A JP 2001157668A JP 4216491 B2 JP4216491 B2 JP 4216491B2
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JP
Japan
Prior art keywords
sic
substrate
wafer
crucible
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2001157668A
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English (en)
Japanese (ja)
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JP2002053395A (ja
JP2002053395A5 (zh
Inventor
茂弘 西野
和俊 村田
美治 茅根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Engineering and Shipbuilding Co Ltd
Mitsui E&S Holdings Co Ltd
Original Assignee
Mitsui Engineering and Shipbuilding Co Ltd
Mitsui E&S Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Mitsui Engineering and Shipbuilding Co Ltd, Mitsui E&S Holdings Co Ltd filed Critical Mitsui Engineering and Shipbuilding Co Ltd
Priority to JP2001157668A priority Critical patent/JP4216491B2/ja
Publication of JP2002053395A publication Critical patent/JP2002053395A/ja
Priority to TW091109927A priority patent/TW583354B/zh
Priority to KR1020037014434A priority patent/KR100827588B1/ko
Priority to US10/478,649 priority patent/US6995036B2/en
Priority to DE60234925T priority patent/DE60234925D1/de
Priority to PCT/JP2002/005040 priority patent/WO2002097174A1/en
Priority to EP02726485A priority patent/EP1404904B1/en
Publication of JP2002053395A5 publication Critical patent/JP2002053395A5/ja
Application granted granted Critical
Publication of JP4216491B2 publication Critical patent/JP4216491B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2001157668A 2000-06-01 2001-05-25 α−ＳｉＣウェハの製造方法 Expired - Lifetime JP4216491B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001157668A JP4216491B2 (ja) 2000-06-01 2001-05-25 α−ＳｉＣウェハの製造方法
TW091109927A TW583354B (en) 2001-05-25 2002-05-13 Method for producing amorphous SiC wafer
KR1020037014434A KR100827588B1 (ko) 2001-05-25 2002-05-24 α-ＳｉＣ 웨이퍼의 제조 방법
US10/478,649 US6995036B2 (en) 2001-05-25 2002-05-24 Production method of α-SiC wafer
DE60234925T DE60234925D1 (de) 2001-05-25 2002-05-24 Verfahren zur herstellung eines alpha-sic-wafers
PCT/JP2002/005040 WO2002097174A1 (en) 2001-05-25 2002-05-24 PRODUCTION METHOD OF α-SIC WAFER
EP02726485A EP1404904B1 (en) 2001-05-25 2002-05-24 Production method of alpha-sic wafer

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000-164339 2000-06-01
JP2000164339 2000-06-01
JP2001157668A JP4216491B2 (ja) 2000-06-01 2001-05-25 α−ＳｉＣウェハの製造方法

Publications (3)

Publication Number Publication Date
JP2002053395A JP2002053395A (ja) 2002-02-19
JP2002053395A5 JP2002053395A5 (zh) 2008-11-13
JP4216491B2 true JP4216491B2 (ja) 2009-01-28

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Application Number Title Priority Date Filing Date
JP2001157668A Expired - Lifetime JP4216491B2 (ja) 2000-06-01 2001-05-25 α−ＳｉＣウェハの製造方法

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JP (1) JP4216491B2 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002327648A1 (en) * 2001-09-19 2003-04-01 Phoenix Scientific Corporation Process and apparatus for silicon boat, silicon tubing and other silicon based member fabrication
JP2008120617A (ja) * 2006-11-09 2008-05-29 Bridgestone Corp 炭化珪素単結晶の製造方法
CN106948001B (zh) * 2017-03-17 2019-06-21 电子科技大学 一种瓶颈式反应管及高通量二维单晶炉装置
KR102159224B1 (ko) * 2018-07-17 2020-09-23 주식회사 마스터 포커스 링, 그 제조 방법, 및 기판 처리 장치
CN110217796B (zh) * 2019-06-04 2021-02-19 山东天岳先进科技股份有限公司 一种高纯碳化硅粉及其制备方法
CN115917060A (zh) * 2020-06-30 2023-04-04 京瓷株式会社 SiC晶体的制造方法

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JP2002053395A (ja) 2002-02-19

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