DE60234925D1 - Verfahren zur herstellung eines alpha-sic-wafers - Google Patents

Verfahren zur herstellung eines alpha-sic-wafers

Info

Publication number
DE60234925D1
DE60234925D1 DE60234925T DE60234925T DE60234925D1 DE 60234925 D1 DE60234925 D1 DE 60234925D1 DE 60234925 T DE60234925 T DE 60234925T DE 60234925 T DE60234925 T DE 60234925T DE 60234925 D1 DE60234925 D1 DE 60234925D1
Authority
DE
Germany
Prior art keywords
preparing
sic wafers
alpha sic
alpha
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60234925T
Other languages
English (en)
Inventor
Kazutoshi Murata
Shigehiro Nishino
Yoshiharu Chinone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Engineering and Shipbuilding Co Ltd
Original Assignee
Mitsui Engineering and Shipbuilding Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001157668A external-priority patent/JP4216491B2/ja
Application filed by Mitsui Engineering and Shipbuilding Co Ltd filed Critical Mitsui Engineering and Shipbuilding Co Ltd
Application granted granted Critical
Publication of DE60234925D1 publication Critical patent/DE60234925D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
DE60234925T 2001-05-25 2002-05-24 Verfahren zur herstellung eines alpha-sic-wafers Expired - Lifetime DE60234925D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001157668A JP4216491B2 (ja) 2000-06-01 2001-05-25 α−ＳｉＣウェハの製造方法
PCT/JP2002/005040 WO2002097174A1 (en) 2001-05-25 2002-05-24 PRODUCTION METHOD OF α-SIC WAFER

Publications (1)

Publication Number Publication Date
DE60234925D1 true DE60234925D1 (de) 2010-02-11

Family

ID=19001496

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60234925T Expired - Lifetime DE60234925D1 (de) 2001-05-25 2002-05-24 Verfahren zur herstellung eines alpha-sic-wafers

Country Status (6)

Country Link
US (1) US6995036B2 (de)
EP (1) EP1404904B1 (de)
KR (1) KR100827588B1 (de)
DE (1) DE60234925D1 (de)
TW (1) TW583354B (de)
WO (1) WO2002097174A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4150642B2 (ja) * 2003-08-04 2008-09-17 株式会社デンソー 単結晶の成長方法および成長装置
SG150497A1 (en) * 2004-07-23 2009-03-30 Aspenbio Pharma Inc Methods and devices for diagnosis of appendicitis
US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
CA2759074A1 (en) * 2010-02-05 2011-08-11 Taro Nishiguchi Method for manufacturing silicon carbide substrate
US9546420B1 (en) * 2012-10-08 2017-01-17 Sandia Corporation Methods of depositing an alpha-silicon-carbide-containing film at low temperature
KR102089949B1 (ko) * 2017-10-20 2020-03-19 세메스 주식회사 기판 처리 장치 및 기판 처리 장치의 부품

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0791153B2 (ja) * 1990-06-20 1995-10-04 三井造船株式会社 α―ＳｉＣ単結晶の製造方法
DE4310744A1 (de) * 1993-04-01 1994-10-06 Siemens Ag Vorrichtung zum Herstellen von SiC-Einkristallen
US5989340A (en) * 1995-11-14 1999-11-23 Siemens Aktiengesellschaft Process and device for sublimation growing of silicon carbide monocrystals
CA2263339C (en) * 1997-06-27 2002-07-23 Kichiya Tanino Single crystal sic and process for preparing the same
EP1243674B1 (de) * 1999-09-06 2005-06-08 Sixon Inc. Sic-einkristall und herstellungsverfahren dafür
JP4275308B2 (ja) * 2000-12-28 2009-06-10 株式会社デンソー 炭化珪素単結晶の製造方法およびその製造装置

Also Published As

Publication number Publication date
KR20040008169A (ko) 2004-01-28
KR100827588B1 (ko) 2008-05-07
EP1404904A1 (de) 2004-04-07
US6995036B2 (en) 2006-02-07
EP1404904B1 (de) 2009-12-30
US20040241343A1 (en) 2004-12-02
WO2002097174A1 (en) 2002-12-05
TW583354B (en) 2004-04-11
EP1404904A4 (de) 2007-08-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition