DE602004028126D1 - Verfahren zur herstellung eines epitaktischen siliciumwafers - Google Patents
Verfahren zur herstellung eines epitaktischen siliciumwafersInfo
- Publication number
- DE602004028126D1 DE602004028126D1 DE602004028126T DE602004028126T DE602004028126D1 DE 602004028126 D1 DE602004028126 D1 DE 602004028126D1 DE 602004028126 T DE602004028126 T DE 602004028126T DE 602004028126 T DE602004028126 T DE 602004028126T DE 602004028126 D1 DE602004028126 D1 DE 602004028126D1
- Authority
- DE
- Germany
- Prior art keywords
- preparing
- silicon wafers
- epitactic
- epitactic silicon
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003284912A JP4599816B2 (ja) | 2003-08-01 | 2003-08-01 | シリコンエピタキシャルウェーハの製造方法 |
PCT/JP2004/006007 WO2005013343A1 (ja) | 2003-08-01 | 2004-04-26 | 気相成長装置及び気相成長方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004028126D1 true DE602004028126D1 (de) | 2010-08-26 |
Family
ID=34113856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004028126T Expired - Lifetime DE602004028126D1 (de) | 2003-08-01 | 2004-04-26 | Verfahren zur herstellung eines epitaktischen siliciumwafers |
Country Status (6)
Country | Link |
---|---|
US (1) | US7591908B2 (de) |
EP (1) | EP1650788B1 (de) |
JP (1) | JP4599816B2 (de) |
KR (1) | KR101079175B1 (de) |
DE (1) | DE602004028126D1 (de) |
WO (1) | WO2005013343A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010016312A (ja) * | 2008-07-07 | 2010-01-21 | Sumco Corp | エピタキシャルウェーハの製造方法 |
CN105810630A (zh) * | 2008-08-29 | 2016-07-27 | 威科仪器有限公司 | 具有变化热阻的晶片载体 |
US20100107974A1 (en) * | 2008-11-06 | 2010-05-06 | Asm America, Inc. | Substrate holder with varying density |
JP5521561B2 (ja) * | 2010-01-12 | 2014-06-18 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
US9650726B2 (en) * | 2010-02-26 | 2017-05-16 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
CN101979721A (zh) * | 2010-09-19 | 2011-02-23 | 山东伟基炭科技有限公司 | 硅芯棒及用于多晶硅生长的硅芯结构 |
TWI541928B (zh) * | 2011-10-14 | 2016-07-11 | 晶元光電股份有限公司 | 晶圓載具 |
US10316412B2 (en) | 2012-04-18 | 2019-06-11 | Veeco Instruments Inc. | Wafter carrier for chemical vapor deposition systems |
CN102828238B (zh) * | 2012-08-24 | 2015-11-04 | 东莞市中镓半导体科技有限公司 | 用于改良外延过程中衬底晶片表面温场的方法 |
US10167571B2 (en) | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
US9799548B2 (en) * | 2013-03-15 | 2017-10-24 | Applied Materials, Inc. | Susceptors for enhanced process uniformity and reduced substrate slippage |
ITCO20130041A1 (it) * | 2013-09-27 | 2015-03-28 | Lpe Spa | Suscettore con elemento di supporto |
DE102014100024A1 (de) | 2014-01-02 | 2015-07-02 | Aixtron Se | Vorrichtung zur Anordnung von Substraten, insbesondere Suszeptor eines CVD-Reaktors |
CN105917459A (zh) * | 2014-02-07 | 2016-08-31 | 应用材料公司 | 用于dsa上弯曲晶片的夹持能力 |
US20210040643A1 (en) * | 2017-05-12 | 2021-02-11 | Toyo Tanso Co., Ltd. | Susceptor, method for producing epitaxial substrate, and epitaxial substrate |
JP7296914B2 (ja) | 2020-04-17 | 2023-06-23 | 三菱電機株式会社 | サテライトおよび炭化珪素半導体装置の製造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58182819A (ja) | 1982-04-20 | 1983-10-25 | Toshiba Corp | 加熱基台 |
JPS5932123A (ja) | 1982-08-18 | 1984-02-21 | Sony Corp | 気相成長法 |
JPS61215289A (ja) | 1985-03-19 | 1986-09-25 | Toshiba Mach Co Ltd | 気相成長装置 |
JPS62262417A (ja) | 1986-05-09 | 1987-11-14 | Toshiba Mach Co Ltd | 気相成長用サセプタ |
JPH01256118A (ja) | 1988-04-05 | 1989-10-12 | Sumitomo Metal Ind Ltd | 気相反応装置 |
JPH03150365A (ja) * | 1989-07-26 | 1991-06-26 | Tokyo Electron Ltd | 熱処理装置 |
CA2060956C (en) * | 1991-02-12 | 2000-04-11 | Jesse N. Matossian | Evaluation of the extent of wear of articles |
JPH0555151A (ja) * | 1991-08-23 | 1993-03-05 | Fujitsu Ltd | 半導体製造装置 |
US5444217A (en) * | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
JPH06302550A (ja) * | 1993-04-13 | 1994-10-28 | Hitachi Ltd | 半導体製造装置 |
JP3317781B2 (ja) * | 1994-06-08 | 2002-08-26 | 東芝セラミックス株式会社 | 半導体ウエハの熱処理用サセプタの製造方法 |
FR2766845B1 (fr) * | 1997-07-31 | 1999-10-15 | Sgs Thomson Microelectronics | Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic |
JP2001522141A (ja) * | 1997-11-03 | 2001-11-13 | エーエスエム アメリカ インコーポレイテッド | 低質量サポートを用いたウェハの加工方法 |
US6026589A (en) * | 1998-02-02 | 2000-02-22 | Silicon Valley Group, Thermal Systems Llc | Wafer carrier and semiconductor apparatus for processing a semiconductor substrate |
JP4003906B2 (ja) * | 1999-03-19 | 2007-11-07 | コバレントマテリアル株式会社 | シリコン単結晶半導体ウエハ加熱処理用治具及びこれを用いたシリコン単結晶半導体ウエハ加熱処理用装置 |
JP3424069B2 (ja) * | 1999-04-28 | 2003-07-07 | 東芝セラミックス株式会社 | エピタキシャルシリコン基板の製造方法 |
JP2000355766A (ja) * | 1999-06-15 | 2000-12-26 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板処理方法 |
CA2327201A1 (en) * | 1999-12-02 | 2001-06-02 | Masaharu Amano | Bucket tooth and method of manufacturing the same |
JP2002134484A (ja) * | 2000-10-19 | 2002-05-10 | Asm Japan Kk | 半導体基板保持装置 |
JP2003203866A (ja) * | 2001-10-24 | 2003-07-18 | Shin Etsu Handotai Co Ltd | 気相成長装置およびエピタキシャルウェーハの製造方法 |
JP3514254B2 (ja) | 2001-12-28 | 2004-03-31 | 信越半導体株式会社 | 熱処理装置およびシリコンエピタキシャルウェーハの製造方法 |
-
2003
- 2003-08-01 JP JP2003284912A patent/JP4599816B2/ja not_active Expired - Fee Related
-
2004
- 2004-04-26 EP EP04729522A patent/EP1650788B1/de not_active Expired - Lifetime
- 2004-04-26 KR KR1020067002089A patent/KR101079175B1/ko active IP Right Grant
- 2004-04-26 DE DE602004028126T patent/DE602004028126D1/de not_active Expired - Lifetime
- 2004-04-26 US US10/565,653 patent/US7591908B2/en not_active Expired - Lifetime
- 2004-04-26 WO PCT/JP2004/006007 patent/WO2005013343A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP1650788B1 (de) | 2010-07-14 |
EP1650788A4 (de) | 2006-10-11 |
KR20060052948A (ko) | 2006-05-19 |
JP2005056984A (ja) | 2005-03-03 |
EP1650788A1 (de) | 2006-04-26 |
WO2005013343A1 (ja) | 2005-02-10 |
US20060180076A1 (en) | 2006-08-17 |
KR101079175B1 (ko) | 2011-11-02 |
JP4599816B2 (ja) | 2010-12-15 |
US7591908B2 (en) | 2009-09-22 |
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