DE602004028126D1 - Verfahren zur herstellung eines epitaktischen siliciumwafers - Google Patents

Verfahren zur herstellung eines epitaktischen siliciumwafers

Info

Publication number
DE602004028126D1
DE602004028126D1 DE602004028126T DE602004028126T DE602004028126D1 DE 602004028126 D1 DE602004028126 D1 DE 602004028126D1 DE 602004028126 T DE602004028126 T DE 602004028126T DE 602004028126 T DE602004028126 T DE 602004028126T DE 602004028126 D1 DE602004028126 D1 DE 602004028126D1
Authority
DE
Germany
Prior art keywords
preparing
silicon wafers
epitactic
epitactic silicon
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004028126T
Other languages
English (en)
Inventor
Koichi Kanaya
Toru Otsuka
Takao Kanno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE602004028126D1 publication Critical patent/DE602004028126D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE602004028126T 2003-08-01 2004-04-26 Verfahren zur herstellung eines epitaktischen siliciumwafers Expired - Lifetime DE602004028126D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003284912A JP4599816B2 (ja) 2003-08-01 2003-08-01 シリコンエピタキシャルウェーハの製造方法
PCT/JP2004/006007 WO2005013343A1 (ja) 2003-08-01 2004-04-26 気相成長装置及び気相成長方法

Publications (1)

Publication Number Publication Date
DE602004028126D1 true DE602004028126D1 (de) 2010-08-26

Family

ID=34113856

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004028126T Expired - Lifetime DE602004028126D1 (de) 2003-08-01 2004-04-26 Verfahren zur herstellung eines epitaktischen siliciumwafers

Country Status (6)

Country Link
US (1) US7591908B2 (de)
EP (1) EP1650788B1 (de)
JP (1) JP4599816B2 (de)
KR (1) KR101079175B1 (de)
DE (1) DE602004028126D1 (de)
WO (1) WO2005013343A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010016312A (ja) * 2008-07-07 2010-01-21 Sumco Corp エピタキシャルウェーハの製造方法
TWI397113B (zh) * 2008-08-29 2013-05-21 維克儀器公司 具有可變熱阻之晶圓載體
US20100107974A1 (en) * 2008-11-06 2010-05-06 Asm America, Inc. Substrate holder with varying density
JP5521561B2 (ja) * 2010-01-12 2014-06-18 信越半導体株式会社 貼り合わせウェーハの製造方法
US9650726B2 (en) * 2010-02-26 2017-05-16 Applied Materials, Inc. Methods and apparatus for deposition processes
CN101979721A (zh) * 2010-09-19 2011-02-23 山东伟基炭科技有限公司 硅芯棒及用于多晶硅生长的硅芯结构
TWI541928B (zh) * 2011-10-14 2016-07-11 晶元光電股份有限公司 晶圓載具
US10316412B2 (en) 2012-04-18 2019-06-11 Veeco Instruments Inc. Wafter carrier for chemical vapor deposition systems
CN102828238B (zh) * 2012-08-24 2015-11-04 东莞市中镓半导体科技有限公司 用于改良外延过程中衬底晶片表面温场的方法
US9799548B2 (en) * 2013-03-15 2017-10-24 Applied Materials, Inc. Susceptors for enhanced process uniformity and reduced substrate slippage
US10167571B2 (en) 2013-03-15 2019-01-01 Veeco Instruments Inc. Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
ITCO20130041A1 (it) * 2013-09-27 2015-03-28 Lpe Spa Suscettore con elemento di supporto
DE102014100024A1 (de) 2014-01-02 2015-07-02 Aixtron Se Vorrichtung zur Anordnung von Substraten, insbesondere Suszeptor eines CVD-Reaktors
CN105917459A (zh) * 2014-02-07 2016-08-31 应用材料公司 用于dsa上弯曲晶片的夹持能力
TW201907050A (zh) * 2017-05-12 2019-02-16 日商東洋炭素股份有限公司 承載盤、磊晶基板的製造方法及磊晶基板
JP7296914B2 (ja) * 2020-04-17 2023-06-23 三菱電機株式会社 サテライトおよび炭化珪素半導体装置の製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182819A (ja) 1982-04-20 1983-10-25 Toshiba Corp 加熱基台
JPS5932123A (ja) 1982-08-18 1984-02-21 Sony Corp 気相成長法
JPS61215289A (ja) 1985-03-19 1986-09-25 Toshiba Mach Co Ltd 気相成長装置
JPS62262417A (ja) 1986-05-09 1987-11-14 Toshiba Mach Co Ltd 気相成長用サセプタ
JPH01256118A (ja) 1988-04-05 1989-10-12 Sumitomo Metal Ind Ltd 気相反応装置
JPH03150365A (ja) * 1989-07-26 1991-06-26 Tokyo Electron Ltd 熱処理装置
CA2060956C (en) * 1991-02-12 2000-04-11 Jesse N. Matossian Evaluation of the extent of wear of articles
JPH0555151A (ja) * 1991-08-23 1993-03-05 Fujitsu Ltd 半導体製造装置
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
JPH06302550A (ja) * 1993-04-13 1994-10-28 Hitachi Ltd 半導体製造装置
JP3317781B2 (ja) * 1994-06-08 2002-08-26 東芝セラミックス株式会社 半導体ウエハの熱処理用サセプタの製造方法
FR2766845B1 (fr) * 1997-07-31 1999-10-15 Sgs Thomson Microelectronics Procede d'epitaxie sur un substrat de silicium comprenant des zones fortement dopees a l'arsenic
JP2001522141A (ja) * 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 低質量サポートを用いたウェハの加工方法
US6026589A (en) * 1998-02-02 2000-02-22 Silicon Valley Group, Thermal Systems Llc Wafer carrier and semiconductor apparatus for processing a semiconductor substrate
JP4003906B2 (ja) * 1999-03-19 2007-11-07 コバレントマテリアル株式会社 シリコン単結晶半導体ウエハ加熱処理用治具及びこれを用いたシリコン単結晶半導体ウエハ加熱処理用装置
JP3424069B2 (ja) * 1999-04-28 2003-07-07 東芝セラミックス株式会社 エピタキシャルシリコン基板の製造方法
JP2000355766A (ja) * 1999-06-15 2000-12-26 Hitachi Kokusai Electric Inc 基板処理装置及び基板処理方法
US6865829B2 (en) * 1999-12-02 2005-03-15 Komatsu Ltd. Bucket tooth
JP2002134484A (ja) * 2000-10-19 2002-05-10 Asm Japan Kk 半導体基板保持装置
JP2003203866A (ja) * 2001-10-24 2003-07-18 Shin Etsu Handotai Co Ltd 気相成長装置およびエピタキシャルウェーハの製造方法
JP3514254B2 (ja) 2001-12-28 2004-03-31 信越半導体株式会社 熱処理装置およびシリコンエピタキシャルウェーハの製造方法

Also Published As

Publication number Publication date
JP2005056984A (ja) 2005-03-03
EP1650788A1 (de) 2006-04-26
KR20060052948A (ko) 2006-05-19
WO2005013343A1 (ja) 2005-02-10
US7591908B2 (en) 2009-09-22
US20060180076A1 (en) 2006-08-17
JP4599816B2 (ja) 2010-12-15
EP1650788A4 (de) 2006-10-11
EP1650788B1 (de) 2010-07-14
KR101079175B1 (ko) 2011-11-02

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