DE60230982D1 - Verfahren zur herstellung eines halbleiterbauelements - Google Patents
Verfahren zur herstellung eines halbleiterbauelementsInfo
- Publication number
- DE60230982D1 DE60230982D1 DE60230982T DE60230982T DE60230982D1 DE 60230982 D1 DE60230982 D1 DE 60230982D1 DE 60230982 T DE60230982 T DE 60230982T DE 60230982 T DE60230982 T DE 60230982T DE 60230982 D1 DE60230982 D1 DE 60230982D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3211—Nitridation of silicon-containing layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001168789A JP2002367990A (ja) | 2001-06-04 | 2001-06-04 | 半導体装置の製造方法 |
PCT/JP2002/005386 WO2002099868A1 (fr) | 2001-06-04 | 2002-05-31 | Procede de production d'un dispositif a semi-conducteur |
Publications (1)
Publication Number | Publication Date |
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DE60230982D1 true DE60230982D1 (de) | 2009-03-12 |
Family
ID=19010962
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60230982T Expired - Lifetime DE60230982D1 (de) | 2001-06-04 | 2002-05-31 | Verfahren zur herstellung eines halbleiterbauelements |
Country Status (6)
Country | Link |
---|---|
US (1) | US6933249B2 (de) |
EP (1) | EP1394844B1 (de) |
JP (1) | JP2002367990A (de) |
KR (1) | KR100574148B1 (de) |
DE (1) | DE60230982D1 (de) |
WO (1) | WO2002099868A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003015151A1 (en) * | 2001-08-02 | 2003-02-20 | Tokyo Electron Limited | Base material treating method and electron device-use material |
JP4051063B2 (ja) | 2003-03-13 | 2008-02-20 | 富士通株式会社 | 半導体装置の製造方法 |
JP4140767B2 (ja) * | 2003-03-24 | 2008-08-27 | 株式会社堀場製作所 | 半導体装置における絶縁膜の形成方法 |
JP4259247B2 (ja) * | 2003-09-17 | 2009-04-30 | 東京エレクトロン株式会社 | 成膜方法 |
JP4477981B2 (ja) * | 2004-10-07 | 2010-06-09 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP2008235397A (ja) * | 2007-03-19 | 2008-10-02 | Elpida Memory Inc | 半導体装置の製造方法 |
JP5467007B2 (ja) * | 2009-09-30 | 2014-04-09 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
JP5325759B2 (ja) * | 2009-12-21 | 2013-10-23 | ラムバス・インコーポレーテッド | 半導体装置の製造方法 |
JP2012216631A (ja) * | 2011-03-31 | 2012-11-08 | Tokyo Electron Ltd | プラズマ窒化処理方法 |
WO2014073892A1 (ko) * | 2012-11-07 | 2014-05-15 | 주식회사 유피케미칼 | 실리콘-함유 박막의 제조 방법 |
KR20140059107A (ko) | 2012-11-07 | 2014-05-15 | 주식회사 유피케미칼 | 실리콘 질화물 박막 제조 방법 |
JP2016021520A (ja) | 2014-07-15 | 2016-02-04 | ソニー株式会社 | 半導体装置および電子機器 |
US10707073B2 (en) | 2017-09-05 | 2020-07-07 | Asm Ip Holding B.V. | Film forming method and patterning method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI57975C (fi) * | 1979-02-28 | 1980-11-10 | Lohja Ab Oy | Foerfarande och anordning vid uppbyggande av tunna foereningshinnor |
US5107308A (en) * | 1986-07-04 | 1992-04-21 | Mitsubishi Denki Kabushiki Kaisha | Field-effect transistor |
JPH0639357B2 (ja) | 1986-09-08 | 1994-05-25 | 新技術開発事業団 | 元素半導体単結晶薄膜の成長方法 |
USRE36328E (en) * | 1988-03-31 | 1999-10-05 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus including temperature control mechanism |
JP3348262B2 (ja) * | 1994-10-05 | 2002-11-20 | 富士通株式会社 | 半導体装置の製造方法 |
JPH0950996A (ja) | 1995-08-07 | 1997-02-18 | Ulvac Japan Ltd | 窒化シリコン膜の形成方法およびその窒化シリコン膜 |
JP3529989B2 (ja) * | 1997-09-12 | 2004-05-24 | 株式会社東芝 | 成膜方法及び半導体装置の製造方法 |
US5985771A (en) * | 1998-04-07 | 1999-11-16 | Micron Technology, Inc. | Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers |
US6162687A (en) * | 1998-08-19 | 2000-12-19 | Advanced Micro Devices, Inc. | Method of manufacturing semiconductor device having oxide-nitride gate insulating layer |
JP2001168092A (ja) * | 1999-01-08 | 2001-06-22 | Toshiba Corp | 半導体装置およびその製造方法 |
US6576062B2 (en) * | 2000-01-06 | 2003-06-10 | Tokyo Electron Limited | Film forming apparatus and film forming method |
JP2002076308A (ja) * | 2000-08-31 | 2002-03-15 | Fujitsu Ltd | 半導体装置およびその製造方法 |
-
2001
- 2001-06-04 JP JP2001168789A patent/JP2002367990A/ja active Pending
-
2002
- 2002-05-31 US US10/479,043 patent/US6933249B2/en not_active Expired - Fee Related
- 2002-05-31 EP EP02730853A patent/EP1394844B1/de not_active Expired - Fee Related
- 2002-05-31 KR KR1020037015809A patent/KR100574148B1/ko not_active IP Right Cessation
- 2002-05-31 WO PCT/JP2002/005386 patent/WO2002099868A1/ja active Application Filing
- 2002-05-31 DE DE60230982T patent/DE60230982D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040152339A1 (en) | 2004-08-05 |
US6933249B2 (en) | 2005-08-23 |
KR20040007641A (ko) | 2004-01-24 |
WO2002099868A1 (fr) | 2002-12-12 |
EP1394844A1 (de) | 2004-03-03 |
EP1394844B1 (de) | 2009-01-21 |
KR100574148B1 (ko) | 2006-04-25 |
EP1394844A4 (de) | 2006-11-15 |
JP2002367990A (ja) | 2002-12-20 |
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