JP4180716B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4180716B2
JP4180716B2 JP37219598A JP37219598A JP4180716B2 JP 4180716 B2 JP4180716 B2 JP 4180716B2 JP 37219598 A JP37219598 A JP 37219598A JP 37219598 A JP37219598 A JP 37219598A JP 4180716 B2 JP4180716 B2 JP 4180716B2
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Japan
Prior art keywords
conductive layer
insulating film
film
region
semiconductor device
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Expired - Fee Related
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JP37219598A
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Japanese (ja)
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JP2000196038A (ja
JP2000196038A5 (https=
Inventor
俊二 中村
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Fujitsu Ltd
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Fujitsu Ltd
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Publication of JP2000196038A5 publication Critical patent/JP2000196038A5/ja
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JP37219598A 1998-12-28 1998-12-28 半導体装置の製造方法 Expired - Fee Related JP4180716B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP37219598A JP4180716B2 (ja) 1998-12-28 1998-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37219598A JP4180716B2 (ja) 1998-12-28 1998-12-28 半導体装置の製造方法

Publications (3)

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JP2000196038A JP2000196038A (ja) 2000-07-14
JP2000196038A5 JP2000196038A5 (https=) 2005-10-27
JP4180716B2 true JP4180716B2 (ja) 2008-11-12

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JP37219598A Expired - Fee Related JP4180716B2 (ja) 1998-12-28 1998-12-28 半導体装置の製造方法

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Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020058259A (ko) * 2000-12-29 2002-07-12 박종섭 반도체 소자의 제조 방법
KR100459707B1 (ko) * 2002-03-21 2004-12-04 삼성전자주식회사 실린더형 커패시터를 포함하는 반도체 소자 및 그 제조 방법
KR100475272B1 (ko) * 2002-06-29 2005-03-10 주식회사 하이닉스반도체 반도체소자 제조방법
JP2004111414A (ja) 2002-09-13 2004-04-08 Renesas Technology Corp 半導体装置の製造方法
KR100538098B1 (ko) * 2003-08-18 2005-12-21 삼성전자주식회사 개선된 구조적 안정성 및 향상된 캐패시턴스를 갖는캐패시터를 포함하는 반도체 장치 및 그 제조 방법
US7067385B2 (en) 2003-09-04 2006-06-27 Micron Technology, Inc. Support for vertically oriented capacitors during the formation of a semiconductor device
US7125781B2 (en) * 2003-09-04 2006-10-24 Micron Technology, Inc. Methods of forming capacitor devices
KR100645459B1 (ko) 2004-06-23 2006-11-15 주식회사 하이닉스반도체 반도체 장치 제조 방법
US7387939B2 (en) 2004-07-19 2008-06-17 Micron Technology, Inc. Methods of forming semiconductor structures and capacitor devices
US7439152B2 (en) 2004-08-27 2008-10-21 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7320911B2 (en) 2004-12-06 2008-01-22 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7557015B2 (en) 2005-03-18 2009-07-07 Micron Technology, Inc. Methods of forming pluralities of capacitors
US7544563B2 (en) 2005-05-18 2009-06-09 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7557013B2 (en) 2006-04-10 2009-07-07 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7902081B2 (en) 2006-10-11 2011-03-08 Micron Technology, Inc. Methods of etching polysilicon and methods of forming pluralities of capacitors
US7785962B2 (en) 2007-02-26 2010-08-31 Micron Technology, Inc. Methods of forming a plurality of capacitors
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
US7682924B2 (en) 2007-08-13 2010-03-23 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8388851B2 (en) 2008-01-08 2013-03-05 Micron Technology, Inc. Capacitor forming methods
US8274777B2 (en) 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
JP2009253208A (ja) 2008-04-10 2009-10-29 Elpida Memory Inc 半導体記憶装置及びその製造方法
US7759193B2 (en) 2008-07-09 2010-07-20 Micron Technology, Inc. Methods of forming a plurality of capacitors
JP4979742B2 (ja) * 2009-06-26 2012-07-18 ルネサスエレクトロニクス株式会社 半導体装置
JP5206622B2 (ja) 2009-08-07 2013-06-12 三菱瓦斯化学株式会社 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
CN102575360B (zh) 2009-10-02 2014-01-08 三菱瓦斯化学株式会社 用于抑制金属微细结构体的图案倒塌的处理液和使用其的金属微细结构体的制造方法
US20120214722A1 (en) 2009-10-22 2012-08-23 Mitsubishi Gas Chemical Company Inc. Treatment solution for preventing pattern collapse in metal fine structure body, and process for production of metal fine structure body using same
CN102640264B (zh) 2009-10-23 2015-04-01 三菱瓦斯化学株式会社 用于抑制金属微细结构体的图案倒塌的处理液和使用其的金属微细结构体的制造方法
US8518788B2 (en) 2010-08-11 2013-08-27 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8980812B2 (en) 2010-09-08 2015-03-17 Mitsubishi Gas Chemical Company, Inc. Treatment liquid for inhibiting pattern collapse in microstructures, and microstructure manufacturing method using said treatment liquid
EP2615631B1 (en) 2010-09-08 2019-05-08 Mitsubishi Gas Chemical Company, Inc. Method for producing microstructure using processing liquid for suppressing pattern collapse of microstructure
JP5741589B2 (ja) 2010-09-08 2015-07-01 三菱瓦斯化学株式会社 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
US8946043B2 (en) 2011-12-21 2015-02-03 Micron Technology, Inc. Methods of forming capacitors
TWI473275B (zh) * 2012-01-04 2015-02-11 Inotera Memories Inc 具有強健型環溝結構的記憶體電容之製造方法
JP6119285B2 (ja) 2012-03-27 2017-04-26 三菱瓦斯化学株式会社 微細構造体のパターン倒壊抑制用処理液及びこれを用いた微細構造体の製造方法
US8652926B1 (en) 2012-07-26 2014-02-18 Micron Technology, Inc. Methods of forming capacitors
US10134801B2 (en) * 2015-11-30 2018-11-20 Taiwan Semiconductor Manufacturing Company Limited Method of forming deep trench isolation in radiation sensing substrate and image sensor device
CN114078855B (zh) * 2020-08-21 2024-09-24 长鑫存储技术有限公司 半导体器件及其形成方法
EP3985724B1 (en) 2020-08-21 2023-06-07 Changxin Memory Technologies, Inc. Semiconductor device and method for forming same
EP3985723B1 (en) 2020-08-21 2025-06-25 Changxin Memory Technologies, Inc. Semiconductor device and forming method therefor

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