JP4171246B2 - メモリカードおよびその製造方法 - Google Patents

メモリカードおよびその製造方法 Download PDF

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Publication number
JP4171246B2
JP4171246B2 JP2002169144A JP2002169144A JP4171246B2 JP 4171246 B2 JP4171246 B2 JP 4171246B2 JP 2002169144 A JP2002169144 A JP 2002169144A JP 2002169144 A JP2002169144 A JP 2002169144A JP 4171246 B2 JP4171246 B2 JP 4171246B2
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JP
Japan
Prior art keywords
lead frame
memory card
connection terminal
chip
flash memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002169144A
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English (en)
Japanese (ja)
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JP2004013738A5 (cg-RX-API-DMAC7.html
JP2004013738A (ja
Inventor
光一 金本
正親 増田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002169144A priority Critical patent/JP4171246B2/ja
Priority to US10/443,956 priority patent/US6924547B2/en
Priority to KR1020030035493A priority patent/KR101000625B1/ko
Publication of JP2004013738A publication Critical patent/JP2004013738A/ja
Publication of JP2004013738A5 publication Critical patent/JP2004013738A5/ja
Application granted granted Critical
Publication of JP4171246B2 publication Critical patent/JP4171246B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/0772—Physical layout of the record carrier
    • G06K19/07732—Physical layout of the record carrier the record carrier having a housing or construction similar to well-known portable memory devices, such as SD cards, USB or memory sticks
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49855—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers for flat-cards, e.g. credit cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Credit Cards Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2002169144A 2002-06-10 2002-06-10 メモリカードおよびその製造方法 Expired - Fee Related JP4171246B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002169144A JP4171246B2 (ja) 2002-06-10 2002-06-10 メモリカードおよびその製造方法
US10/443,956 US6924547B2 (en) 2002-06-10 2003-05-23 Memory card
KR1020030035493A KR101000625B1 (ko) 2002-06-10 2003-06-03 메모리 카드 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002169144A JP4171246B2 (ja) 2002-06-10 2002-06-10 メモリカードおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2004013738A JP2004013738A (ja) 2004-01-15
JP2004013738A5 JP2004013738A5 (cg-RX-API-DMAC7.html) 2005-10-13
JP4171246B2 true JP4171246B2 (ja) 2008-10-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002169144A Expired - Fee Related JP4171246B2 (ja) 2002-06-10 2002-06-10 メモリカードおよびその製造方法

Country Status (3)

Country Link
US (1) US6924547B2 (cg-RX-API-DMAC7.html)
JP (1) JP4171246B2 (cg-RX-API-DMAC7.html)
KR (1) KR101000625B1 (cg-RX-API-DMAC7.html)

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US7264992B2 (en) * 2004-08-06 2007-09-04 Paul Hsueh Removable flash integrated memory module card and method of manufacture
US8141240B2 (en) 1999-08-04 2012-03-27 Super Talent Electronics, Inc. Manufacturing method for micro-SD flash memory card
US7830666B2 (en) * 2000-01-06 2010-11-09 Super Talent Electronics, Inc. Manufacturing process for single-chip MMC/SD flash memory device with molded asymmetric circuit board
US20080286990A1 (en) * 2003-12-02 2008-11-20 Super Talent Electronics, Inc. Direct Package Mold Process For Single Chip SD Flash Cards
US6900527B1 (en) * 2001-09-19 2005-05-31 Amkor Technology, Inc. Lead-frame method and assembly for interconnecting circuits within a circuit module
US8998620B2 (en) * 2003-12-02 2015-04-07 Super Talent Technology, Corp. Molding method for COB-EUSB devices and metal housing package
US8102657B2 (en) 2003-12-02 2012-01-24 Super Talent Electronics, Inc. Single shot molding method for COB USB/EUSB devices with contact pad ribs
US20080195817A1 (en) * 2004-07-08 2008-08-14 Super Talent Electronics, Inc. SD Flash Memory Card Manufacturing Using Rigid-Flex PCB
CA2682814C (en) 2004-07-12 2011-11-08 Kabushiki Kaisha Toshiba Storage device and host apparatus
US20060027906A1 (en) * 2004-08-03 2006-02-09 Sheng-Chih Hsu Exclusive memory structure applicable for multi media card and secure digital card
KR100574996B1 (ko) * 2004-11-25 2006-05-02 삼성전자주식회사 반도체 패키지 및 이를 이용한 메모리 카드, 및 이의제조에 이용되는 몰드
KR100585163B1 (ko) 2004-11-27 2006-06-01 삼성전자주식회사 메모리 카드 및 그 제조방법
JP2007081232A (ja) * 2005-09-15 2007-03-29 Renesas Technology Corp 半導体装置の製造方法
DE502005007956D1 (de) * 2005-11-14 2009-10-01 Tyco Electronics Amp Gmbh Smartcard-Körper, Smartcard und Herstellungsverfahren
JP4843311B2 (ja) * 2005-12-27 2011-12-21 富士通コンポーネント株式会社 メモリカード及びその製造方法
JP2007205908A (ja) 2006-02-02 2007-08-16 Matsushita Electric Ind Co Ltd 重量センサ
JP4766053B2 (ja) 2006-02-02 2011-09-07 パナソニック株式会社 Ｓｄメモリカードおよびｓｄメモリカードの製造方法
WO2007123143A1 (ja) 2006-04-21 2007-11-01 Panasonic Corporation メモリカード
KR100849182B1 (ko) 2007-01-22 2008-07-30 삼성전자주식회사 반도체 카드 패키지 및 그 제조방법
US8254134B2 (en) * 2007-05-03 2012-08-28 Super Talent Electronics, Inc. Molded memory card with write protection switch assembly
CN101689252A (zh) * 2007-06-15 2010-03-31 松下电器产业株式会社 存储卡及其制造方法
US8102658B2 (en) * 2007-07-05 2012-01-24 Super Talent Electronics, Inc. Micro-SD to secure digital adaptor card and manufacturing method
JP2009032013A (ja) * 2007-07-26 2009-02-12 Toshiba Corp 半導体装置及びその製造方法
USD794034S1 (en) * 2009-01-07 2017-08-08 Samsung Electronics Co., Ltd. Memory device
USD794641S1 (en) * 2009-01-07 2017-08-15 Samsung Electronics Co., Ltd. Memory device
USD794643S1 (en) * 2009-01-07 2017-08-15 Samsung Electronics Co., Ltd. Memory device
USD795262S1 (en) * 2009-01-07 2017-08-22 Samsung Electronics Co., Ltd. Memory device
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USD795261S1 (en) * 2009-01-07 2017-08-22 Samsung Electronics Co., Ltd. Memory device
KR101035209B1 (ko) * 2010-01-26 2011-05-17 주식회사 영일프레시젼 방열판을 포함하는 아이씨 카드의 충진제 플래쉬 방지방법
JP5242644B2 (ja) * 2010-08-31 2013-07-24 株式会社東芝 半導体記憶装置
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JP5740372B2 (ja) * 2012-09-12 2015-06-24 株式会社東芝 半導体メモリカード
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US6843421B2 (en) * 2001-08-13 2005-01-18 Matrix Semiconductor, Inc. Molded memory module and method of making the module absent a substrate support

Also Published As

Publication number Publication date
US6924547B2 (en) 2005-08-02
KR20040014185A (ko) 2004-02-14
KR101000625B1 (ko) 2010-12-10
JP2004013738A (ja) 2004-01-15
US20030227075A1 (en) 2003-12-11

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