JP4766053B2 - Sdメモリカードおよびsdメモリカードの製造方法 - Google Patents
Sdメモリカードおよびsdメモリカードの製造方法 Download PDFInfo
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- JP4766053B2 JP4766053B2 JP2007556873A JP2007556873A JP4766053B2 JP 4766053 B2 JP4766053 B2 JP 4766053B2 JP 2007556873 A JP2007556873 A JP 2007556873A JP 2007556873 A JP2007556873 A JP 2007556873A JP 4766053 B2 JP4766053 B2 JP 4766053B2
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- Prior art keywords
- semiconductor chip
- circuit board
- resin layer
- sealing resin
- memory card
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- G—PHYSICS
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- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Description
図1は、本発明の第1の実施の形態に係るメモリカード1の構成を示す平面図である。図2は、メモリカード1を図1の2−2線の位置で切断した断面図である。なお、図1では、メモリカード1の内部構造の理解を容易にするために、カバー部7については輪郭のみを破線で示しており、以下の図5、図7および図8についても同様である。
以下に、本発明の第2の実施の形態に係るメモリカードについて、図5と図6を用いて説明する。
以下に、本発明の第3の実施の形態に係るメモリカードについて、図8と図9を用いて説明する。
以下に、本発明の第4の実施の形態に係るメモリカードについて、図11を用いて説明する。
2 回路基板
3 第1半導体チップ
4 封止樹脂層
5 第2半導体チップ
6 チップ部品
7 カバー部
8 第3半導体チップ
21 上面
22 下面
23 線状凸部
24 線状凹部
33,53,83 バンプ
41 第1封止樹脂層
42 第2封止樹脂層
43 第3封止樹脂層
71 凹部
91 押圧ツール
92 ヒータ
211,212,213,214 電極
221 外部電極
Claims (12)
- 回路基板と、
バンプを挟んで前記回路基板の主面上に実装された第1半導体チップと、
前記第1半導体チップとの間に1mm以下の隙間を設けてバンプを挟んで前記回路基板の前記主面上に実装された第2半導体チップと、
前記第1半導体チップと前記第2半導体チップとの間の前記回路基板上において、設けられた凸部または凹部と、
前記第1半導体チップに接合されている前記バンプの周囲を覆うとともに前記第1半導体チップと前記回路基板との間に介在する第1封止樹脂層と、
前記第2半導体チップに接合されている前記バンプの周囲を覆うとともに前記第2半導体チップと前記回路基板との間に介在する第2封止樹脂層と、
前記回路基板の前記主面側において前記第1半導体チップおよび前記第2半導体チップを覆うカバー部と、
を備えて、
前記凸部または凹部が、前記第1封止樹脂層と前記第2封止樹脂層とを分離させていることを特徴とするSDメモリカード。 - 前記の凸部の前記回路基板面からの高さが、前記第1半導体チップと前記第2半導体チップの上面より低い請求項1記載のSDメモリカード。
- 前記カバー部が、前記第1半導体チップおよび前記第2半導体チップを収容する凹部を有するとともに前記凹部の開口を介して前記回路基板に取り付けられる成型部品からなることを特徴とする請求項1または2に記載のSDメモリカード。
- 前記第1封止樹脂層および前記第2封止樹脂層が、前記回路基板の前記主面に貼付されたフィルム状の樹脂材料からなることを特徴とする請求項1から3のいずれか1項に記載のSDメモリカード。
- 前記第1半導体チップが情報を記憶するSDチップであり、
前記第2半導体チップが、前記第1半導体チップを制御するコントロールチップであることを特徴とする請求項1から4のいずれか1項に記載のSDメモリカード。 - 前記第1半導体チップとの間に1mm以下の隙間を設けてバンプを挟んで前記回路基板の前記主面上に実装された第3半導体チップと、
前記第3半導体チップに接合されている前記バンプの周囲を覆うとともに前記第3半導体チップと前記回路基板との間に介在する第3封止樹脂層と、をさらに備えていることを特徴とする請求項1から5のいずれか1項に記載のSDメモリカード。 - a)回路基板の主面に第1封止樹脂層を形成するステップと、
b)前記回路基板の前記主面に第2封止樹脂層を形成するステップと、
c)第1半導体チップを前記第1封止樹脂層を介して前記回路基板の前記主面に向けて押圧してバンプを挟んで前記第1半導体チップを前記回路基板に電気的に接続するとともに前記第1封止樹脂層を硬化させるステップと、
d)前記c)ステップと並行して、前記第1半導体チップとの間に1mm以下の隙間を設けてバンプを挟んで前記回路基板の前記主面上に、第2半導体チップを前記第2封止樹脂層を介して前記回路基板の前記主面に向けて押圧してバンプを挟んで前記第2半導体チップを前記回路基板に電気的に接続するとともに前記第2封止樹脂層を硬化させるステップと、
e)前記回路基板の前記主面側において前記第1半導体チップおよび前記第2半導体チップをカバー部で覆うステップと、
を含むことを特徴とするSDメモリカードの製造方法。 - 前記第1半導体チップと前記第2半導体チップとの間の前記回路基板上において、凸部または凹部を設けて配置されることを特徴とする請求項7に記載のSDメモリカードの製造方法。
- 前記第1封止樹脂層および前記第2封止樹脂層が同一種類の樹脂材料からなり、前記a)ステップおよび前記b)ステップを連続して、または、互いに並行して行うことを特徴とする請求項7または8に記載のSDメモリカードの製造方法。
- 前記カバー部が凹部を有する成型部品であって、
前記e)ステップにおいて、前記カバー部の前記凹部の開口に前記第1半導体チップおよび前記第2半導体チップを収容するとともに、前記カバー部が前記凹部の開口を介して前記回路基板に取り付けられることを特徴とする請求項7から9のいずれか1項に記載のSDメモリカードの製造方法。 - 前記a)ステップにおいて、フィルム状の樹脂材料を前記回路基板の前記主面に貼付することにより前記第1封止樹脂層が形成され、
前記b)ステップにおいて、フィルム状の樹脂材料を前記回路基板の前記主面に貼付することにより前記第2封止樹脂層が形成されることを特徴とする請求項7から10のいずれか1項に記載のSDメモリカードの製造方法。 - 前記第1半導体チップが情報を記憶するメモリチップであり、
前記第2半導体チップが、前記第1半導体チップを制御するコントロールチップであることを特徴とする請求項7から11のいずれか1項に記載のSDメモリカードの製造方法。
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JP2006025444 | 2006-02-02 | ||
PCT/JP2007/051541 WO2007088866A1 (ja) | 2006-02-02 | 2007-01-31 | メモリカードおよびメモリカードの製造方法 |
JP2007556873A JP4766053B2 (ja) | 2006-02-02 | 2007-01-31 | Sdメモリカードおよびsdメモリカードの製造方法 |
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CN101689252A (zh) * | 2007-06-15 | 2010-03-31 | 松下电器产业株式会社 | 存储卡及其制造方法 |
USD794644S1 (en) * | 2009-01-07 | 2017-08-15 | Samsung Electronics Co., Ltd. | Memory device |
USD794643S1 (en) * | 2009-01-07 | 2017-08-15 | Samsung Electronics Co., Ltd. | Memory device |
USD795261S1 (en) * | 2009-01-07 | 2017-08-22 | Samsung Electronics Co., Ltd. | Memory device |
USD794642S1 (en) * | 2009-01-07 | 2017-08-15 | Samsung Electronics Co., Ltd. | Memory device |
USD794034S1 (en) * | 2009-01-07 | 2017-08-08 | Samsung Electronics Co., Ltd. | Memory device |
USD795262S1 (en) * | 2009-01-07 | 2017-08-22 | Samsung Electronics Co., Ltd. | Memory device |
USD794641S1 (en) * | 2009-01-07 | 2017-08-15 | Samsung Electronics Co., Ltd. | Memory device |
CN106686932B (zh) * | 2015-11-05 | 2019-12-13 | 精能医学股份有限公司 | 植入式电子装置的防水结构 |
US10068854B2 (en) * | 2016-10-24 | 2018-09-04 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
US10923438B2 (en) | 2019-04-26 | 2021-02-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure and method for forming the same |
US10849235B1 (en) * | 2020-05-20 | 2020-11-24 | Tactotek Oy | Method of manufacture of a structure and structure |
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JPH09297535A (ja) * | 1996-04-30 | 1997-11-18 | Toshiba Chem Corp | 電子タグとその製造方法 |
JP2004087844A (ja) * | 2002-08-27 | 2004-03-18 | Murata Mfg Co Ltd | 外観保護ケース及び外観保護ケース組立体 |
JP2005166891A (ja) * | 2003-12-02 | 2005-06-23 | Kingpak Technology Inc | 小型メモリカード |
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JPH01299094A (ja) * | 1988-05-28 | 1989-12-01 | Ibiden Co Ltd | Icカード |
US5838551A (en) * | 1996-08-01 | 1998-11-17 | Northern Telecom Limited | Electronic package carrying an electronic component and assembly of mother board and electronic package |
JP3929250B2 (ja) * | 2001-03-08 | 2007-06-13 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2003258192A (ja) | 2002-03-01 | 2003-09-12 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP4171246B2 (ja) | 2002-06-10 | 2008-10-22 | 株式会社ルネサステクノロジ | メモリカードおよびその製造方法 |
US7601563B2 (en) * | 2005-06-10 | 2009-10-13 | Kingston Technology Corporation | Small form factor molded memory card and a method thereof |
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- 2007-01-31 JP JP2007556873A patent/JP4766053B2/ja not_active Expired - Fee Related
- 2007-01-31 CN CN2007800030594A patent/CN101371268B/zh not_active Expired - Fee Related
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JPH09297535A (ja) * | 1996-04-30 | 1997-11-18 | Toshiba Chem Corp | 電子タグとその製造方法 |
JP2004087844A (ja) * | 2002-08-27 | 2004-03-18 | Murata Mfg Co Ltd | 外観保護ケース及び外観保護ケース組立体 |
JP2005166891A (ja) * | 2003-12-02 | 2005-06-23 | Kingpak Technology Inc | 小型メモリカード |
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US7939923B2 (en) | 2011-05-10 |
CN101371268A (zh) | 2009-02-18 |
CN101371268B (zh) | 2012-05-09 |
JPWO2007088866A1 (ja) | 2009-06-25 |
US20100193927A1 (en) | 2010-08-05 |
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