JP4163516B2 - 光学および渦電流モニタリングによる統合終点検出システム - Google Patents
光学および渦電流モニタリングによる統合終点検出システム Download PDFInfo
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- JP4163516B2 JP4163516B2 JP2002585155A JP2002585155A JP4163516B2 JP 4163516 B2 JP4163516 B2 JP 4163516B2 JP 2002585155 A JP2002585155 A JP 2002585155A JP 2002585155 A JP2002585155 A JP 2002585155A JP 4163516 B2 JP4163516 B2 JP 4163516B2
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- Prior art keywords
- signal
- polishing
- monitoring system
- substrate
- eddy current
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
- G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
- G01B7/10—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance
- G01B7/105—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using magnetic means, e.g. by measuring change of reluctance for measuring thickness of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Description
Claims (10)
- 化学的機械研摩の為の装置において、
研磨面を支えるプラテンと、
渦電流情報を示す第1信号を発生させる為に前記プラテン内に位置決めされた渦電流モニタリング・システムと、
光学情報を示す第2信号を発生させる為に前記プラテン内に位置決めされた光学モニタリング・システムと、
出力ライン上で、前記第1信号と前記第2信号を前記第1信号と前記第2信号によって示される情報を示す第3信号へと組み合わせる為のプラテン内の回路と、
前記出力ライン上の第3信号を受信し前記第1信号と前記第2信号とを抽出するコンピュータと、
を備える、前記装置。 - 前記プラテンが回転可能である、請求項1記載の装置。
- 回転式電気ユニオン継手を更に備え、前記出力ラインは、前記回路と前記コンピュータとの間の前記回転式電気ユニオン継手を通過する、請求項2記載の装置。
- 前記研磨面に接触させて基板を保持する為のキャリアヘッドを更に備える、請求項1記載の装置。
- 前記回路は、前記第1信号及び前記第2信号からのデータをパケット内に集め、前記コンピュータが前記パケットから前記データを抽出する、請求項1記載の装置。
- 渦電流モニタリング・システム及び光学モニタリング・システムを内部に有するプラテンで研磨面を支えるステップと、
渦電流モニタリング・システムから、渦電流情報を示す第1信号を発生させるステップと、
光学モニタリング・システムから、光学情報を示す第2信号を発生させるステップと、
前記第1信号と前記第2信号を、前記プラテン内の回路を用いて、前記第1信号と前記第2信号によって示される情報を示す第3信号へと組み合わせるステップであって、前記第1信号と前記第2信号を出力ライン上において組み合わせるステップと、
コンピュータで前記第3信号を受信するステップと、
前記第3信号から、前記第1信号と前記第2信号を抽出するステップと
を備える化学的機械研摩の方法。 - 前記プラテンを回転させるステップを更に備える、請求項6記載の化学的機械研摩の方法。
- 前記出力ラインに回転式電気ユニオン継手を通過させるステップを更に備える、請求項7記載の化学的機械研摩の方法。
- 前記研磨面に接触させて基板を保持する為のキャリアヘッドを用いるステップを更に備える、請求項6記載の化学的機械研摩の方法。
- 前記第1信号及び前記第2信号からのデータをパケット内に集め、前記パケットから前記データを抽出するステップを更に備える、請求項6記載の化学的機械研摩の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/847,867 US6966816B2 (en) | 2001-05-02 | 2001-05-02 | Integrated endpoint detection system with optical and eddy current monitoring |
PCT/US2002/014281 WO2002087825A1 (en) | 2001-05-02 | 2002-05-02 | Integrated endpoint detection system with optical and eddy current monitoring |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004525521A JP2004525521A (ja) | 2004-08-19 |
JP4163516B2 true JP4163516B2 (ja) | 2008-10-08 |
Family
ID=25301692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002585155A Expired - Fee Related JP4163516B2 (ja) | 2001-05-02 | 2002-05-02 | 光学および渦電流モニタリングによる統合終点検出システム |
Country Status (7)
Country | Link |
---|---|
US (3) | US6966816B2 (ja) |
EP (1) | EP1390176A1 (ja) |
JP (1) | JP4163516B2 (ja) |
KR (2) | KR100899717B1 (ja) |
CN (1) | CN1230279C (ja) |
TW (1) | TW550690B (ja) |
WO (1) | WO2002087825A1 (ja) |
Families Citing this family (84)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6924641B1 (en) * | 2000-05-19 | 2005-08-02 | Applied Materials, Inc. | Method and apparatus for monitoring a metal layer during chemical mechanical polishing |
US7374477B2 (en) * | 2002-02-06 | 2008-05-20 | Applied Materials, Inc. | Polishing pads useful for endpoint detection in chemical mechanical polishing |
US8485862B2 (en) | 2000-05-19 | 2013-07-16 | Applied Materials, Inc. | Polishing pad for endpoint detection and related methods |
US6878038B2 (en) * | 2000-07-10 | 2005-04-12 | Applied Materials Inc. | Combined eddy current sensing and optical monitoring for chemical mechanical polishing |
US6608495B2 (en) | 2001-03-19 | 2003-08-19 | Applied Materials, Inc. | Eddy-optic sensor for object inspection |
US6966816B2 (en) * | 2001-05-02 | 2005-11-22 | Applied Materials, Inc. | Integrated endpoint detection system with optical and eddy current monitoring |
US6811466B1 (en) * | 2001-12-28 | 2004-11-02 | Applied Materials, Inc. | System and method for in-line metal profile measurement |
US6935922B2 (en) | 2002-02-04 | 2005-08-30 | Kla-Tencor Technologies Corp. | Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing |
TWI273947B (en) * | 2002-02-06 | 2007-02-21 | Applied Materials Inc | Method and apparatus of eddy current monitoring for chemical mechanical polishing |
ITFI20020077A1 (it) * | 2002-05-10 | 2003-11-10 | Galileo Vacuum Systems S R L | Dispositivo per la determinazione dello spessore di uno strato conduttivo |
US7205166B2 (en) * | 2002-06-28 | 2007-04-17 | Lam Research Corporation | Method and apparatus of arrayed, clustered or coupled eddy current sensor configuration for measuring conductive film properties |
US7112960B2 (en) * | 2003-07-31 | 2006-09-26 | Applied Materials, Inc. | Eddy current system for in-situ profile measurement |
US6991516B1 (en) | 2003-08-18 | 2006-01-31 | Applied Materials Inc. | Chemical mechanical polishing with multi-stage monitoring of metal clearing |
US7074109B1 (en) | 2003-08-18 | 2006-07-11 | Applied Materials | Chemical mechanical polishing control system and method |
US7025658B2 (en) * | 2003-08-18 | 2006-04-11 | Applied Materials, Inc. | Platen and head rotation rates for monitoring chemical mechanical polishing |
US8066552B2 (en) | 2003-10-03 | 2011-11-29 | Applied Materials, Inc. | Multi-layer polishing pad for low-pressure polishing |
US20060211157A1 (en) * | 2005-03-17 | 2006-09-21 | Texas Instruments Inc. | Novel CMP endpoint detection process |
US7169016B2 (en) * | 2005-05-10 | 2007-01-30 | Nikon Corporation | Chemical mechanical polishing end point detection apparatus and method |
TWI289091B (en) * | 2005-10-06 | 2007-11-01 | Ind Tech Res Inst | Apparatus for endpoint detection during polishing |
US7407433B2 (en) * | 2005-11-03 | 2008-08-05 | Applied Materials, Inc. | Pad characterization tool |
US7189140B1 (en) * | 2005-11-08 | 2007-03-13 | Novellus Systems, Inc. | Methods using eddy current for calibrating a CMP tool |
KR100660916B1 (ko) | 2006-02-09 | 2006-12-26 | 삼성전자주식회사 | 트렌치들의 패턴 밀도 및 깊이를 매개 변수로 이용하는도전층 평탄화 단계를 포함하는 반도체 소자의 제조 방법 |
US7494929B2 (en) * | 2006-04-27 | 2009-02-24 | Applied Materials, Inc. | Automatic gain control |
CN101511539B (zh) * | 2006-09-12 | 2012-08-22 | 株式会社荏原制作所 | 研磨装置及研磨方法 |
CN101523565B (zh) * | 2006-10-06 | 2012-02-29 | 株式会社荏原制作所 | 加工终点检测方法、研磨方法及研磨装置 |
DE102007011880A1 (de) * | 2007-03-13 | 2008-09-18 | Peter Wolters Gmbh | Bearbeitungsmaschine mit Mitteln zur Erfassung von Bearbeitungsparametern |
DE102007015502A1 (de) * | 2007-03-30 | 2008-10-02 | Advanced Micro Devices, Inc., Sunnyvale | CMP-System mit einem Wirbelstromsensor mit geringerer Höhe |
JP2009026850A (ja) * | 2007-07-18 | 2009-02-05 | Elpida Memory Inc | Cmp装置及びcmpによるウェハー研磨方法 |
JP2009033038A (ja) | 2007-07-30 | 2009-02-12 | Elpida Memory Inc | Cmp装置及びcmpによるウェハー研磨方法 |
US8337278B2 (en) | 2007-09-24 | 2012-12-25 | Applied Materials, Inc. | Wafer edge characterization by successive radius measurements |
DE102008021569A1 (de) * | 2008-04-30 | 2009-11-05 | Advanced Micro Devices, Inc., Sunnyvale | System und Verfahren zur optischen Endpunkterkennung während des CMP unter Anwendung eines substratüberspannenenden Signals |
US20090275265A1 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | Endpoint detection in chemical mechanical polishing using multiple spectra |
DE102008024394A1 (de) * | 2008-05-15 | 2009-12-03 | V&M Deutschland Gmbh | Verfahren zur zerstörungsfreien Prüfung von Rohren |
DE102008028932B4 (de) * | 2008-06-18 | 2011-12-22 | Ident Technology Ag | Einklemmschutz für Verdecksystem |
KR101482064B1 (ko) | 2008-10-16 | 2015-01-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 와전류 이득 보상 |
US8295967B2 (en) * | 2008-11-07 | 2012-10-23 | Applied Materials, Inc. | Endpoint control of multiple-wafer chemical mechanical polishing |
US20100120331A1 (en) * | 2008-11-07 | 2010-05-13 | Applied Materials, Inc. | Endpoint control of multiple-wafer chemical mechanical polishing |
US8628376B2 (en) * | 2008-11-07 | 2014-01-14 | Applied Materials, Inc. | In-line wafer thickness sensing |
WO2010061823A1 (ja) * | 2008-11-28 | 2010-06-03 | ソニー株式会社 | 薄膜トランジスタの製造方法、薄膜トランジスタおよび電子機器 |
KR20110120893A (ko) * | 2009-01-16 | 2011-11-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 윈도우 지지부를 가지는 폴리싱 패드 및 시스템 |
JP5392483B2 (ja) * | 2009-08-31 | 2014-01-22 | 不二越機械工業株式会社 | 研磨装置 |
US8547110B2 (en) * | 2009-09-22 | 2013-10-01 | Adem, Llc | Impedance sensing systems and methods for use in measuring constituents in solid and fluid objects |
WO2011133386A2 (en) * | 2010-04-20 | 2011-10-27 | Applied Materials, Inc. | Closed-loop control for improved polishing pad profiles |
US8616935B2 (en) | 2010-06-02 | 2013-12-31 | Applied Materials, Inc. | Control of overpolishing of multiple substrates on the same platen in chemical mechanical polishing |
KR101105264B1 (ko) * | 2010-09-02 | 2012-01-17 | (주)레이나 | Cmp 공정 중 연마 완료 시점 검출 시스템 및 방법 |
US8545289B2 (en) * | 2011-04-13 | 2013-10-01 | Nanya Technology Corporation | Distance monitoring device |
US20120276817A1 (en) * | 2011-04-27 | 2012-11-01 | Iravani Hassan G | Eddy current monitoring of metal residue or metal pillars |
US9528814B2 (en) | 2011-05-19 | 2016-12-27 | NeoVision, LLC | Apparatus and method of using impedance resonance sensor for thickness measurement |
DE202011103105U1 (de) * | 2011-07-12 | 2012-10-22 | Prozeq Sa | Vorrichtung zum Bestimmen des Verschleisszustands einer Karbonkeramik-Bremsscheibe |
US20130017762A1 (en) * | 2011-07-15 | 2013-01-17 | Infineon Technologies Ag | Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine |
US9465089B2 (en) | 2011-12-01 | 2016-10-11 | Neovision Llc | NMR spectroscopy device based on resonance type impedance (IR) sensor and method of NMR spectra acquisition |
US8952708B2 (en) | 2011-12-02 | 2015-02-10 | Neovision Llc | Impedance resonance sensor for real time monitoring of different processes and methods of using same |
CN103187328B (zh) * | 2011-12-27 | 2015-08-05 | 中芯国际集成电路制造(上海)有限公司 | Cmp终点检测方法与相变存储器底部接触结构形成方法 |
US20140030956A1 (en) * | 2012-07-25 | 2014-01-30 | Jimin Zhang | Control of polishing of multiple substrates on the same platen in chemical mechanical polishing |
US20140116131A1 (en) * | 2012-11-01 | 2014-05-01 | Ti Group Automotive Systems, L.L.C. | Contactless liquid level sensor |
KR101387917B1 (ko) * | 2012-11-13 | 2014-04-22 | 주식회사 케이씨텍 | 화학 기계적 연마 장비의 웨이퍼 막두께 모니터링 장치 및 방법 |
CN103346117B (zh) * | 2013-06-13 | 2015-10-14 | 华进半导体封装先导技术研发中心有限公司 | 基于涡流技术的tsv晶圆背面减薄控制方法及系统 |
CN103523806B (zh) * | 2013-10-22 | 2014-11-12 | 瓮福(集团)有限责任公司 | 一种高纯度无水硫酸锂的制备方法 |
JP6263445B2 (ja) * | 2014-06-06 | 2018-01-17 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
US9754846B2 (en) * | 2014-06-23 | 2017-09-05 | Applied Materials, Inc. | Inductive monitoring of conductive trench depth |
KR101737932B1 (ko) | 2015-05-21 | 2017-05-19 | 한밭대학교 산학협력단 | 반도체 소자 내부의 메탈층을 이용한 내부형상측정모듈이 장착된 밀링장치 |
US9669514B2 (en) * | 2015-05-29 | 2017-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd | System and method for polishing substrate |
KR102503655B1 (ko) * | 2015-10-13 | 2023-02-24 | 주식회사 케이씨텍 | 베어 웨이퍼의 연마 장치 |
KR101684842B1 (ko) * | 2015-10-27 | 2016-12-20 | 주식회사 케이씨텍 | 화학 기계적 연마 장치 |
KR101712920B1 (ko) * | 2015-12-07 | 2017-03-08 | 주식회사 케이씨텍 | 화학 기계적 연마 장치 |
JP6779633B2 (ja) * | 2016-02-23 | 2020-11-04 | 株式会社荏原製作所 | 研磨装置 |
TW201819107A (zh) * | 2016-08-26 | 2018-06-01 | 美商應用材料股份有限公司 | 用於化學機械研磨的研磨墊厚度監測 |
US11079459B2 (en) | 2017-01-13 | 2021-08-03 | Applied Materials, Inc. | Resistivity-based calibration of in-situ electromagnetic inductive monitoring |
TWI816620B (zh) * | 2017-04-21 | 2023-09-21 | 美商應用材料股份有限公司 | 使用神經網路來監測的拋光裝置 |
WO2019099541A1 (en) * | 2017-11-16 | 2019-05-23 | Applied Materials, Inc. | Predictive filter for polishing pad wear rate monitoring |
US11577362B2 (en) * | 2018-03-14 | 2023-02-14 | Applied Materials, Inc. | Pad conditioner cut rate monitoring |
TWI825075B (zh) * | 2018-04-03 | 2023-12-11 | 美商應用材料股份有限公司 | 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體 |
US11697183B2 (en) | 2018-07-26 | 2023-07-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fabrication of a polishing pad for chemical mechanical polishing |
US11577356B2 (en) * | 2018-09-24 | 2023-02-14 | Applied Materials, Inc. | Machine vision as input to a CMP process control algorithm |
US11143495B2 (en) * | 2018-09-24 | 2021-10-12 | Honeywell International Inc. | Thickness measurement with inductive and optical displacement sensors |
CN111515863A (zh) * | 2020-04-30 | 2020-08-11 | 武汉新芯集成电路制造有限公司 | 研磨方法、研磨垫修整系统 |
JP2023517449A (ja) | 2020-05-14 | 2023-04-26 | アプライド マテリアルズ インコーポレイテッド | 研磨中のインシトゥモニタリングで使用するためのニューラルネットワークをトレーニングするための技術及び研磨システム |
CN115038549B (zh) | 2020-06-24 | 2024-03-12 | 应用材料公司 | 使用研磨垫磨损补偿的基板层厚度确定 |
CN115104001A (zh) | 2020-06-29 | 2022-09-23 | 应用材料公司 | 根据基于机器学习的基板图像处理进行膜厚度估计 |
US11794305B2 (en) | 2020-09-28 | 2023-10-24 | Applied Materials, Inc. | Platen surface modification and high-performance pad conditioning to improve CMP performance |
US11794302B2 (en) * | 2020-12-15 | 2023-10-24 | Applied Materials, Inc. | Compensation for slurry composition in in-situ electromagnetic inductive monitoring |
CN114136201B (zh) * | 2021-12-30 | 2023-03-17 | 西安交通大学 | 基于光学透明导电介质材料的电涡流探头及薄膜厚度测量系统和方法 |
WO2023197157A1 (zh) * | 2022-04-12 | 2023-10-19 | 华为技术有限公司 | 传感器、检测装置以及检测系统 |
CN115319634B (zh) * | 2022-10-14 | 2023-03-07 | 杭州众硅电子科技有限公司 | 一种涡流终点检测装置及方法 |
Family Cites Families (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US551005A (en) * | 1895-12-10 | Slate | ||
US4005359A (en) | 1975-11-07 | 1977-01-25 | Smoot William N | Resonant frequency measuring device for gauging coating thickness |
US4112365A (en) | 1977-02-15 | 1978-09-05 | Eaton Corporation | Position detecting system |
US4303885A (en) | 1979-06-18 | 1981-12-01 | Electric Power Research Institute, Inc. | Digitally controlled multifrequency eddy current test apparatus and method |
US4467281A (en) | 1980-02-29 | 1984-08-21 | Electric Power Research Institute, Inc. | Multi frequency eddy current test apparatus with intermediate frequency processing |
US4556845A (en) | 1982-05-17 | 1985-12-03 | International Business Machines Corporation | Method for monitoring deposition rate using an eddy current detector |
JPS5967405A (ja) | 1982-09-30 | 1984-04-17 | Sumitomo Metal Ind Ltd | ライナ厚測定方法 |
US4829251A (en) | 1983-08-31 | 1989-05-09 | Helmut Fischer | Electromagnetic probe for measuring the thickness of thin coatings on magnetic substrates |
JPS6114501A (ja) | 1984-06-30 | 1986-01-22 | Nippon Kokan Kk <Nkk> | 渦流式距離計 |
JPS6138503A (ja) | 1984-07-31 | 1986-02-24 | Ketsuto Kagaku Kenkyusho:Kk | 膜厚計 |
US4849694A (en) | 1986-10-27 | 1989-07-18 | Nanometrics, Incorporated | Thickness measurements of thin conductive films |
JPH07111341B2 (ja) | 1987-11-20 | 1995-11-29 | 株式会社豊田中央研究所 | 非接触式膜厚測定器 |
US4963500A (en) | 1988-02-02 | 1990-10-16 | Sera Solar Corporation | Method of monitoring semiconductor manufacturing processes and test sample therefor |
DE3817574A1 (de) | 1988-05-24 | 1989-11-30 | Fraunhofer Ges Forschung | Wirbelstromsensor |
JPH0648185B2 (ja) | 1988-10-12 | 1994-06-22 | 明産株式会社 | シート厚さ測定装置 |
US5355083A (en) | 1988-11-16 | 1994-10-11 | Measurex Corporation | Non-contact sensor and method using inductance and laser distance measurements for measuring the thickness of a layer of material overlaying a substrate |
US4977853A (en) | 1989-06-01 | 1990-12-18 | E. I. Du Pont De Nemours And Company | Non-contact wet or dry film thickness measuring device |
DE3919131A1 (de) * | 1989-06-12 | 1990-12-13 | Tzn Forschung & Entwicklung | Vorrichtung und verfahren zur beruehrungslosen messung der schichtdicke eines nichtleitenden materials sowie verwendung der vorrichtung zur messung kunststoffbeschichteter metallteile |
US5140265A (en) | 1989-12-20 | 1992-08-18 | Olympus Optical Co., Ltd | Eddy current flaw detecting endoscope apparatus which produces signals which control other devices |
DE4002083A1 (de) | 1990-01-25 | 1991-08-01 | Hoechst Ag | Flaechen- oder schlauchfoermige folie auf basis von cellulosehydrat |
JPH03234467A (ja) | 1990-02-05 | 1991-10-18 | Canon Inc | スタンパの金型取付面の研磨方法およびその研磨機 |
JPH03295409A (ja) | 1990-04-12 | 1991-12-26 | Nippon Steel Corp | 金属管表面塗膜の非接触式厚み測定方法 |
US5213655A (en) | 1990-05-16 | 1993-05-25 | International Business Machines Corporation | Device and method for detecting an end point in polishing operation |
US5081796A (en) | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5270222A (en) | 1990-12-31 | 1993-12-14 | Texas Instruments Incorporated | Method and apparatus for semiconductor device fabrication diagnosis and prognosis |
US5237271A (en) | 1991-05-06 | 1993-08-17 | General Electric Company | Apparatus and method for non-destructive testing using multi-frequency eddy currents |
GB2257507B (en) | 1991-06-26 | 1995-03-01 | Digital Equipment Corp | Semiconductor wafer processing with across-wafer critical dimension monitoring using optical endpoint detection |
US5357331A (en) | 1991-07-02 | 1994-10-18 | Flockencier Stuart W | System for processing reflected energy signals |
US5343146A (en) | 1992-10-05 | 1994-08-30 | De Felsko Corporation | Combination coating thickness gauge using a magnetic flux density sensor and an eddy current search coil |
US5451863A (en) | 1992-10-30 | 1995-09-19 | International Business Machines Corporation | Fiber optic probe with a magneto-optic film on an end surface for detecting a current in an integrated circuit |
US5733171A (en) | 1996-07-18 | 1998-03-31 | Speedfam Corporation | Apparatus for the in-process detection of workpieces in a CMP environment |
US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
DE4327712C2 (de) | 1993-08-18 | 1997-07-10 | Micro Epsilon Messtechnik | Sensoranordnung und Verfahren zum Erfassen von Eigenschaften der Oberflächenschicht eines metallischen Targets |
US5700180A (en) | 1993-08-25 | 1997-12-23 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
JPH0760642A (ja) | 1993-08-30 | 1995-03-07 | Rikagaku Kenkyusho | 電解ドレッシング研削方法及び装置 |
JP3214190B2 (ja) | 1993-09-24 | 2001-10-02 | 株式会社豊田中央研究所 | 非接触式膜厚測定器 |
US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
US5413941A (en) | 1994-01-06 | 1995-05-09 | Micron Technology, Inc. | Optical end point detection methods in semiconductor planarizing polishing processes |
US5511005A (en) | 1994-02-16 | 1996-04-23 | Ade Corporation | Wafer handling and processing system |
JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
US5791969A (en) | 1994-11-01 | 1998-08-11 | Lund; Douglas E. | System and method of automatically polishing semiconductor wafers |
JPH08174411A (ja) | 1994-12-22 | 1996-07-09 | Ebara Corp | ポリッシング装置 |
US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
DE69635816T2 (de) | 1995-03-28 | 2006-10-12 | Applied Materials, Inc., Santa Clara | Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen |
US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
US5541510A (en) | 1995-04-06 | 1996-07-30 | Kaman Instrumentation Corporation | Multi-Parameter eddy current measuring system with parameter compensation technical field |
TW353203B (en) * | 1995-04-10 | 1999-02-21 | Matsushita Electric Ind Co Ltd | Apparatus for holding substrate to be polished |
US5660672A (en) * | 1995-04-10 | 1997-08-26 | International Business Machines Corporation | In-situ monitoring of conductive films on semiconductor wafers |
US5559428A (en) | 1995-04-10 | 1996-09-24 | International Business Machines Corporation | In-situ monitoring of the change in thickness of films |
US5708506A (en) | 1995-07-03 | 1998-01-13 | Applied Materials, Inc. | Apparatus and method for detecting surface roughness in a chemical polishing pad conditioning process |
US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
US5640242A (en) | 1996-01-31 | 1997-06-17 | International Business Machines Corporation | Assembly and method for making in process thin film thickness measurments |
US5644221A (en) | 1996-03-19 | 1997-07-01 | International Business Machines Corporation | Endpoint detection for chemical mechanical polishing using frequency or amplitude mode |
US5663797A (en) | 1996-05-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers |
SE508354C2 (sv) | 1996-07-05 | 1998-09-28 | Asea Atom Ab | Förfarande och anordning för bestämning av skikttjocklek |
US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
US5948203A (en) | 1996-07-29 | 1999-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Optical dielectric thickness monitor for chemical-mechanical polishing process monitoring |
JPH1076464A (ja) | 1996-08-30 | 1998-03-24 | Canon Inc | 研磨方法及びそれを用いた研磨装置 |
JP3788533B2 (ja) | 1996-09-30 | 2006-06-21 | 東京エレクトロン株式会社 | 研磨装置および研磨方法 |
JPH10166262A (ja) | 1996-12-10 | 1998-06-23 | Nikon Corp | 研磨装置 |
US5807165A (en) * | 1997-03-26 | 1998-09-15 | International Business Machines Corporation | Method of electrochemical mechanical planarization |
US5911619A (en) * | 1997-03-26 | 1999-06-15 | International Business Machines Corporation | Apparatus for electrochemical mechanical planarization |
US6108091A (en) | 1997-05-28 | 2000-08-22 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing |
US6111634A (en) | 1997-05-28 | 2000-08-29 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing |
JP3672416B2 (ja) * | 1997-06-27 | 2005-07-20 | 株式会社荏原製作所 | スピン処理装置 |
US6071178A (en) | 1997-07-03 | 2000-06-06 | Rodel Holdings Inc. | Scored polishing pad and methods related thereto |
US5913713A (en) | 1997-07-31 | 1999-06-22 | International Business Machines Corporation | CMP polishing pad backside modifications for advantageous polishing results |
US5865666A (en) | 1997-08-20 | 1999-02-02 | Lsi Logic Corporation | Apparatus and method for polish removing a precise amount of material from a wafer |
DE19742139C2 (de) * | 1997-09-24 | 2000-07-06 | Peter A Eutebach | Duschabtrennung |
US5934974A (en) * | 1997-11-05 | 1999-08-10 | Aplex Group | In-situ monitoring of polishing pad wear |
US6068539A (en) * | 1998-03-10 | 2000-05-30 | Lam Research Corporation | Wafer polishing device with movable window |
US5929994A (en) | 1998-05-20 | 1999-07-27 | Ahead Optoelectronics, Inc. | Intergrating sphere ellipsometer |
US6034781A (en) | 1998-05-26 | 2000-03-07 | Wisconsin Alumni Research Foundation | Electro-optical plasma probe |
US6280289B1 (en) | 1998-11-02 | 2001-08-28 | Applied Materials, Inc. | Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers |
JP4484370B2 (ja) | 1998-11-02 | 2010-06-16 | アプライド マテリアルズ インコーポレイテッド | 基板上のメタル層の化学機械研磨に関して終点を決定するための方法及び基板のメタル層を研磨するための装置 |
US6159073A (en) | 1998-11-02 | 2000-12-12 | Applied Materials, Inc. | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
US6190234B1 (en) | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
US6179709B1 (en) | 1999-02-04 | 2001-01-30 | Applied Materials, Inc. | In-situ monitoring of linear substrate polishing operations |
US6448795B1 (en) | 1999-02-12 | 2002-09-10 | Alexei Ermakov | Three coil apparatus for inductive measurements of conductance |
CN1150601C (zh) | 1999-03-31 | 2004-05-19 | 株式会社尼康 | 抛光设备及半导体器件的制造方法 |
US6217426B1 (en) | 1999-04-06 | 2001-04-17 | Applied Materials, Inc. | CMP polishing pad |
JP2000340538A (ja) * | 1999-05-31 | 2000-12-08 | Hitachi Ltd | 基板の平坦化方法および平坦化加工装置とそれを用いた半導体装置の製造方法 |
JP3675237B2 (ja) | 1999-07-09 | 2005-07-27 | 株式会社東京精密 | 平面加工装置 |
EP1244907A1 (en) * | 1999-12-23 | 2002-10-02 | KLA-Tencor Corporation | In-situ metalization monitoring using eddy current measurements and optical measurements |
US6707540B1 (en) | 1999-12-23 | 2004-03-16 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current and optical measurements |
US6433541B1 (en) * | 1999-12-23 | 2002-08-13 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current measurements during the process for removing the film |
KR100718737B1 (ko) | 2000-01-17 | 2007-05-15 | 가부시키가이샤 에바라 세이사꾸쇼 | 폴리싱 장치 |
US6309276B1 (en) | 2000-02-01 | 2001-10-30 | Applied Materials, Inc. | Endpoint monitoring with polishing rate change |
JP4874465B2 (ja) | 2000-03-28 | 2012-02-15 | 株式会社東芝 | 渦電流損失測定センサ |
US6762604B2 (en) * | 2000-04-07 | 2004-07-13 | Cuong Duy Le | Standalone eddy current measuring system for thickness estimation of conductive films |
US6407546B1 (en) | 2000-04-07 | 2002-06-18 | Cuong Duy Le | Non-contact technique for using an eddy current probe for measuring the thickness of metal layers disposed on semi-conductor wafer products |
US6741076B2 (en) * | 2000-04-07 | 2004-05-25 | Cuong Duy Le | Eddy current measuring system for monitoring and controlling a CMP process |
DE60116757D1 (de) * | 2000-05-19 | 2006-04-06 | Applied Materials Inc | Verfahren und vorrichtung zur "in-situ" überwachung der dicke während des chemisch-mechanischen planiervorganges |
JP3916375B2 (ja) | 2000-06-02 | 2007-05-16 | 株式会社荏原製作所 | ポリッシング方法および装置 |
US6626736B2 (en) | 2000-06-30 | 2003-09-30 | Ebara Corporation | Polishing apparatus |
US6878038B2 (en) | 2000-07-10 | 2005-04-12 | Applied Materials Inc. | Combined eddy current sensing and optical monitoring for chemical mechanical polishing |
US6923711B2 (en) | 2000-10-17 | 2005-08-02 | Speedfam-Ipec Corporation | Multizone carrier with process monitoring system for chemical-mechanical planarization tool |
US6966816B2 (en) * | 2001-05-02 | 2005-11-22 | Applied Materials, Inc. | Integrated endpoint detection system with optical and eddy current monitoring |
US6586337B2 (en) | 2001-11-09 | 2003-07-01 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection during chemical mechanical polishing |
JP4451111B2 (ja) * | 2003-10-20 | 2010-04-14 | 株式会社荏原製作所 | 渦電流センサ |
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CN1505554A (zh) | 2004-06-16 |
KR100899717B1 (ko) | 2009-05-27 |
TW550690B (en) | 2003-09-01 |
WO2002087825A1 (en) | 2002-11-07 |
US7195536B2 (en) | 2007-03-27 |
KR20040015231A (ko) | 2004-02-18 |
KR20080065706A (ko) | 2008-07-14 |
JP2004525521A (ja) | 2004-08-19 |
CN1230279C (zh) | 2005-12-07 |
KR100914365B1 (ko) | 2009-08-28 |
US20050287929A1 (en) | 2005-12-29 |
US20020164925A1 (en) | 2002-11-07 |
US20070135958A1 (en) | 2007-06-14 |
WO2002087825A8 (en) | 2004-09-30 |
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