JP4162773B2 - プラズマ処理装置および検出窓 - Google Patents

プラズマ処理装置および検出窓 Download PDF

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Publication number
JP4162773B2
JP4162773B2 JP26086598A JP26086598A JP4162773B2 JP 4162773 B2 JP4162773 B2 JP 4162773B2 JP 26086598 A JP26086598 A JP 26086598A JP 26086598 A JP26086598 A JP 26086598A JP 4162773 B2 JP4162773 B2 JP 4162773B2
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JP
Japan
Prior art keywords
plasma
detection window
processing
processing apparatus
processing container
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Expired - Lifetime
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JP26086598A
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English (en)
Japanese (ja)
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JP2000077395A5 (https=
JP2000077395A (ja
Inventor
進 斉藤
智一 杉山
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP26086598A priority Critical patent/JP4162773B2/ja
Priority to US09/784,453 priority patent/US6562186B1/en
Priority to PCT/JP1999/004283 priority patent/WO2000013219A1/ja
Priority to KR1020017002296A priority patent/KR100613947B1/ko
Publication of JP2000077395A publication Critical patent/JP2000077395A/ja
Priority to US10/384,520 priority patent/US6821377B2/en
Publication of JP2000077395A5 publication Critical patent/JP2000077395A5/ja
Application granted granted Critical
Publication of JP4162773B2 publication Critical patent/JP4162773B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP26086598A 1998-08-31 1998-08-31 プラズマ処理装置および検出窓 Expired - Lifetime JP4162773B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP26086598A JP4162773B2 (ja) 1998-08-31 1998-08-31 プラズマ処理装置および検出窓
US09/784,453 US6562186B1 (en) 1998-08-31 1999-08-06 Apparatus for plasma processing
PCT/JP1999/004283 WO2000013219A1 (en) 1998-08-31 1999-08-06 Apparatus for plasma processing
KR1020017002296A KR100613947B1 (ko) 1998-08-31 1999-08-06 플라즈마 처리 장치
US10/384,520 US6821377B2 (en) 1998-08-31 2003-03-11 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26086598A JP4162773B2 (ja) 1998-08-31 1998-08-31 プラズマ処理装置および検出窓

Publications (3)

Publication Number Publication Date
JP2000077395A JP2000077395A (ja) 2000-03-14
JP2000077395A5 JP2000077395A5 (https=) 2005-10-27
JP4162773B2 true JP4162773B2 (ja) 2008-10-08

Family

ID=17353838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26086598A Expired - Lifetime JP4162773B2 (ja) 1998-08-31 1998-08-31 プラズマ処理装置および検出窓

Country Status (4)

Country Link
US (2) US6562186B1 (https=)
JP (1) JP4162773B2 (https=)
KR (1) KR100613947B1 (https=)
WO (1) WO2000013219A1 (https=)

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KR100441654B1 (ko) * 2001-09-18 2004-07-27 주성엔지니어링(주) 웨이퍼 감지시스템
KR100448871B1 (ko) * 2001-09-21 2004-09-16 삼성전자주식회사 식각 종말점 검출창 및 이를 채용하는 식각 장치
JP3773189B2 (ja) * 2002-04-24 2006-05-10 独立行政法人科学技術振興機構 窓型プローブ、プラズマ監視装置、及び、プラズマ処理装置
KR100831672B1 (ko) * 2002-07-16 2008-05-22 주식회사 하이닉스반도체 포토마스크의 커버플레이트 구조
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US6798519B2 (en) * 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US6863772B2 (en) * 2002-10-09 2005-03-08 Taiwan Semiconductor Manufacturing Co., Ltd Dual-port end point window for plasma etcher
TW200423195A (en) * 2002-11-28 2004-11-01 Tokyo Electron Ltd Internal member of a plasma processing vessel
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KR101016913B1 (ko) * 2003-03-31 2011-02-22 도쿄엘렉트론가부시키가이샤 처리요소용 배리어층 및 그의 형성방법
US7713380B2 (en) * 2004-01-27 2010-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for backside polymer reduction in dry-etch process
US7241397B2 (en) * 2004-03-30 2007-07-10 Tokyo Electron Limited Honeycomb optical window deposition shield and method for a plasma processing system
JP4593243B2 (ja) 2004-11-18 2010-12-08 株式会社トプコン 気中粒子監視装置および真空処理装置
KR100790393B1 (ko) * 2004-11-26 2008-01-02 삼성전자주식회사 플라즈마 공정장비
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7886687B2 (en) * 2004-12-23 2011-02-15 Advanced Display Process Engineering Co. Ltd. Plasma processing apparatus
JP2006186222A (ja) * 2004-12-28 2006-07-13 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP4006004B2 (ja) * 2004-12-28 2007-11-14 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US20060151116A1 (en) * 2005-01-12 2006-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Focus rings, apparatus in chamber, contact hole and method of forming contact hole
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US7534469B2 (en) * 2005-03-31 2009-05-19 Asm Japan K.K. Semiconductor-processing apparatus provided with self-cleaning device
JP2006310472A (ja) * 2005-04-27 2006-11-09 Nec Electronics Corp プラズマ処理装置
JP2007165512A (ja) * 2005-12-13 2007-06-28 Hitachi High-Technologies Corp プラズマ処理装置
US8440049B2 (en) 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US8475625B2 (en) * 2006-05-03 2013-07-02 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US7763147B1 (en) * 2006-05-15 2010-07-27 Lam Research Corporation Arc suppression plate for a plasma processing chamber
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JP5149610B2 (ja) * 2007-12-19 2013-02-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
EP2534672B1 (en) 2010-02-09 2016-06-01 Energetiq Technology Inc. Laser-driven light source
US8910644B2 (en) * 2010-06-18 2014-12-16 Applied Materials, Inc. Method and apparatus for inducing turbulent flow of a processing chamber cleaning gas
US8568039B2 (en) * 2010-06-21 2013-10-29 Bae Systems Information And Electronic Systems Integration Inc. Fiber-optic connector
WO2014024144A1 (en) * 2012-08-08 2014-02-13 Milman Thin Film Systems Pvt. Ltd. Physical vapor deposition station
KR20150049636A (ko) * 2013-10-30 2015-05-08 삼성전자주식회사 플라즈마 차폐 부재, 플라즈마 감지용 구조체 및 플라즈마 반응 장치
TWI640039B (zh) * 2014-07-03 2018-11-01 美商西凱渥資訊處理科技公司 端點增強器系統及在晶圓蝕刻製程中用於光學端點偵測之方法
KR20160058490A (ko) * 2014-11-17 2016-05-25 삼성전자주식회사 뷰 포트(view port)를 포함하는 플라즈마 공정 설비
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US20180166301A1 (en) * 2016-12-13 2018-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing system
US11670490B2 (en) * 2017-09-29 2023-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit fabrication system with adjustable gas injector
WO2021042117A1 (en) * 2019-08-23 2021-03-04 Lam Research Corporation Plasma viewport
US11587781B2 (en) 2021-05-24 2023-02-21 Hamamatsu Photonics K.K. Laser-driven light source with electrodeless ignition
US12165856B2 (en) 2022-02-21 2024-12-10 Hamamatsu Photonics K.K. Inductively coupled plasma light source
US12144072B2 (en) 2022-03-29 2024-11-12 Hamamatsu Photonics K.K. All-optical laser-driven light source with electrodeless ignition
KR102764072B1 (ko) * 2022-09-07 2025-02-07 한화모멘텀 주식회사 기판 처리 장치
US12156322B2 (en) 2022-12-08 2024-11-26 Hamamatsu Photonics K.K. Inductively coupled plasma light source with switched power supply
US12578076B2 (en) 2023-06-05 2026-03-17 Hamamatsu Photonics K.K. Dual-output laser-driven light source

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Also Published As

Publication number Publication date
US6821377B2 (en) 2004-11-23
US20030173029A1 (en) 2003-09-18
JP2000077395A (ja) 2000-03-14
KR20010072886A (ko) 2001-07-31
KR100613947B1 (ko) 2006-08-18
US6562186B1 (en) 2003-05-13
WO2000013219A1 (en) 2000-03-09

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