JP4159657B2 - 同期型半導体記憶装置 - Google Patents
同期型半導体記憶装置 Download PDFInfo
- Publication number
- JP4159657B2 JP4159657B2 JP19762598A JP19762598A JP4159657B2 JP 4159657 B2 JP4159657 B2 JP 4159657B2 JP 19762598 A JP19762598 A JP 19762598A JP 19762598 A JP19762598 A JP 19762598A JP 4159657 B2 JP4159657 B2 JP 4159657B2
- Authority
- JP
- Japan
- Prior art keywords
- address
- signal
- response
- internal
- latch circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 230000001360 synchronised effect Effects 0.000 title claims description 26
- 239000000872 buffer Substances 0.000 claims description 74
- 230000004044 response Effects 0.000 claims description 70
- 230000002950 deficient Effects 0.000 claims description 33
- 230000000295 complement effect Effects 0.000 claims description 25
- 238000010586 diagram Methods 0.000 description 12
- 230000003111 delayed effect Effects 0.000 description 7
- 230000003068 static effect Effects 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/225—Clock input buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/06—Address interface arrangements, e.g. address buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19762598A JP4159657B2 (ja) | 1998-07-13 | 1998-07-13 | 同期型半導体記憶装置 |
| US09/212,308 US6026036A (en) | 1998-07-13 | 1998-12-16 | Synchronous semiconductor memory device having set up time of external address signal reduced |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19762598A JP4159657B2 (ja) | 1998-07-13 | 1998-07-13 | 同期型半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000030463A JP2000030463A (ja) | 2000-01-28 |
| JP2000030463A5 JP2000030463A5 (enExample) | 2005-10-27 |
| JP4159657B2 true JP4159657B2 (ja) | 2008-10-01 |
Family
ID=16377605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19762598A Expired - Fee Related JP4159657B2 (ja) | 1998-07-13 | 1998-07-13 | 同期型半導体記憶装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6026036A (enExample) |
| JP (1) | JP4159657B2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656953A (en) * | 1995-05-31 | 1997-08-12 | Texas Instruments Incorporated | Low overhead memory designs for IC terminals |
| US6069839A (en) * | 1998-03-20 | 2000-05-30 | Cypress Semiconductor Corp. | Circuit and method for implementing single-cycle read/write operation(s), and random access memory including the circuit and/or practicing the method |
| KR100301047B1 (ko) * | 1998-10-02 | 2001-09-06 | 윤종용 | 2비트프리페치용칼럼어드레스디코더를갖는반도체메모리장치 |
| US7173867B2 (en) * | 2001-02-02 | 2007-02-06 | Broadcom Corporation | Memory redundancy circuit techniques |
| US6745354B2 (en) | 2000-02-02 | 2004-06-01 | Broadcom Corporation | Memory redundancy implementation |
| US6411557B2 (en) * | 2000-02-02 | 2002-06-25 | Broadcom Corporation | Memory architecture with single-port cell and dual-port (read and write) functionality |
| US8164362B2 (en) * | 2000-02-02 | 2012-04-24 | Broadcom Corporation | Single-ended sense amplifier with sample-and-hold reference |
| JP4156781B2 (ja) | 2000-05-30 | 2008-09-24 | 株式会社東芝 | 半導体メモリ集積回路 |
| US6714467B2 (en) * | 2002-03-19 | 2004-03-30 | Broadcom Corporation | Block redundancy implementation in heirarchical RAM's |
| JP2003123478A (ja) | 2001-10-03 | 2003-04-25 | Fujitsu Ltd | 半導体装置及び半導体記憶装置 |
| WO2004076928A2 (en) | 2003-02-21 | 2004-09-10 | Middleby Corporation | Self-cleaning oven |
| JP4641726B2 (ja) * | 2004-01-07 | 2011-03-02 | パナソニック株式会社 | 半導体記憶装置 |
| US8087407B2 (en) | 2004-03-23 | 2012-01-03 | Middleby Corporation | Conveyor oven apparatus and method |
| US9585400B2 (en) | 2004-03-23 | 2017-03-07 | The Middleby Corporation | Conveyor oven apparatus and method |
| US20110048244A1 (en) * | 2009-08-28 | 2011-03-03 | Wiker John H | Apparatus and method for controlling a combustion blower in a gas-fueled conveyor oven |
| US8839714B2 (en) | 2009-08-28 | 2014-09-23 | The Middleby Corporation | Apparatus and method for controlling a conveyor oven |
| US8811109B2 (en) * | 2012-02-27 | 2014-08-19 | Qualcomm Incorporated | Memory pre-decoder circuits employing pulse latch(es) for reducing memory access times, and related systems and methods |
| US8923090B1 (en) | 2013-09-24 | 2014-12-30 | Lsi Corporation | Address decoding circuits for reducing address and memory enable setup time |
| JP6556435B2 (ja) * | 2014-09-17 | 2019-08-07 | 東芝メモリ株式会社 | 半導体集積回路 |
| IT202000029771A1 (it) * | 2020-12-03 | 2022-06-03 | Sk Hynix Inc | Architettura di latch |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086414A (en) * | 1988-11-17 | 1992-02-04 | Hitachi, Ltd. | Semiconductor device having latch means |
| JPH09147595A (ja) * | 1995-11-24 | 1997-06-06 | Nec Corp | 半導体記憶装置 |
| JPH1074396A (ja) * | 1996-08-30 | 1998-03-17 | Nec Corp | 半導体記憶装置 |
| JP3361018B2 (ja) * | 1996-11-11 | 2003-01-07 | 株式会社東芝 | 半導体記憶装置 |
| JPH10334689A (ja) * | 1997-05-30 | 1998-12-18 | Fujitsu Ltd | 半導体記憶装置 |
-
1998
- 1998-07-13 JP JP19762598A patent/JP4159657B2/ja not_active Expired - Fee Related
- 1998-12-16 US US09/212,308 patent/US6026036A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000030463A (ja) | 2000-01-28 |
| US6026036A (en) | 2000-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4159657B2 (ja) | 同期型半導体記憶装置 | |
| US6260128B1 (en) | Semiconductor memory device which operates in synchronism with a clock signal | |
| US7451363B2 (en) | Semiconductor integrated circuit including memory macro | |
| US9183949B2 (en) | Semiconductor device | |
| JPH09231767A (ja) | スタティック型半導体記憶装置 | |
| JPH06119796A (ja) | 欠陥メモリセル救済用デコーダ | |
| JP2689768B2 (ja) | 半導体集積回路装置 | |
| JP2000322900A (ja) | 半導体記録装置 | |
| JPH0383299A (ja) | 半導体記憶装置 | |
| US6735129B2 (en) | Semiconductor integrated circuit device | |
| JP3800463B2 (ja) | 同期型半導体メモリ装置 | |
| JP5099674B2 (ja) | 半導体集積回路 | |
| JP2001344978A (ja) | 半導体メモリ集積回路 | |
| JP3857697B2 (ja) | 半導体集積回路、半導体記憶装置及び半導体記憶装置のテスト方法 | |
| US6967882B1 (en) | Semiconductor memory including static memory | |
| US7032083B1 (en) | Glitch-free memory address decoding circuits and methods and memory subsystems using the same | |
| JP2848314B2 (ja) | 半導体記憶装置 | |
| JP2001338490A (ja) | 半導体記憶装置 | |
| US5796271A (en) | Memory array having redundant word line | |
| US5461586A (en) | Self-timed redundancy circuit | |
| JP2630274B2 (ja) | 半導体記憶装置 | |
| JPH11224499A (ja) | 半導体装置、その製造方法およびそのアドレス検出回路 | |
| JP2004334929A (ja) | メモリ回路 | |
| US12153808B2 (en) | Memory device and data initialization method of the same | |
| KR100427036B1 (ko) | 리던던시 회로 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050706 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050706 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080704 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080708 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20080716 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110725 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110725 Year of fee payment: 3 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110725 Year of fee payment: 3 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120725 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120725 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130725 Year of fee payment: 5 |
|
| LAPS | Cancellation because of no payment of annual fees |