JP4146812B2 - Mems基板およびmems基板の形成方法 - Google Patents
Mems基板およびmems基板の形成方法 Download PDFInfo
- Publication number
- JP4146812B2 JP4146812B2 JP2004065493A JP2004065493A JP4146812B2 JP 4146812 B2 JP4146812 B2 JP 4146812B2 JP 2004065493 A JP2004065493 A JP 2004065493A JP 2004065493 A JP2004065493 A JP 2004065493A JP 4146812 B2 JP4146812 B2 JP 4146812B2
- Authority
- JP
- Japan
- Prior art keywords
- strain gauge
- substrate
- mems
- angle
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 101
- 238000000034 method Methods 0.000 title claims description 10
- 239000012530 fluid Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 31
- 239000003989 dielectric material Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 9
- 238000010304 firing Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005288 electromagnetic effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012417 linear regression Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14153—Structures including a sensor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2206—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0045—Converters combining the concepts of switch-mode regulation and linear regulation, e.g. linear pre-regulator to switching converter, linear and switching converter in parallel, same converter or same transistor operating either in linear or switching mode
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Micromachines (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/384,887 US6739199B1 (en) | 2003-03-10 | 2003-03-10 | Substrate and method of forming substrate for MEMS device with strain gage |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008132869A Division JP2008275630A (ja) | 2003-03-10 | 2008-05-21 | 流体吐出素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004271527A JP2004271527A (ja) | 2004-09-30 |
| JP2004271527A5 JP2004271527A5 (enExample) | 2007-08-23 |
| JP4146812B2 true JP4146812B2 (ja) | 2008-09-10 |
Family
ID=32312413
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004065493A Expired - Fee Related JP4146812B2 (ja) | 2003-03-10 | 2004-03-09 | Mems基板およびmems基板の形成方法 |
| JP2008132869A Pending JP2008275630A (ja) | 2003-03-10 | 2008-05-21 | 流体吐出素子 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008132869A Pending JP2008275630A (ja) | 2003-03-10 | 2008-05-21 | 流体吐出素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6739199B1 (enExample) |
| EP (1) | EP1457766B1 (enExample) |
| JP (2) | JP4146812B2 (enExample) |
| KR (1) | KR101083903B1 (enExample) |
| TW (1) | TWI306831B (enExample) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004358799A (ja) * | 2003-06-04 | 2004-12-24 | Canon Inc | キャリッジ駆動制御方法 |
| US6988412B1 (en) * | 2004-11-30 | 2006-01-24 | Endevco Corporation | Piezoresistive strain concentrator |
| WO2008048212A2 (en) * | 2005-07-07 | 2008-04-24 | The Regents Of The University Of California | Infrared sensor systems and devices |
| CN101657747B (zh) * | 2006-12-05 | 2014-12-10 | 维斯普瑞公司 | 带有开槽金属的基板及相关方法 |
| JP5026144B2 (ja) * | 2007-05-18 | 2012-09-12 | 日本電信電話株式会社 | 記憶素子 |
| KR100917649B1 (ko) * | 2007-11-12 | 2009-09-17 | 주식회사 이오테크닉스 | 플렉시블 기판의 평탄화 방법 및 평탄화 장치 |
| WO2010089234A1 (en) * | 2009-02-03 | 2010-08-12 | Oce-Technologies B.V. | A print head and a method for measuring on the print head |
| US7938016B2 (en) * | 2009-03-20 | 2011-05-10 | Freescale Semiconductor, Inc. | Multiple layer strain gauge |
| KR101656915B1 (ko) * | 2010-05-27 | 2016-09-12 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | 인쇄헤드와 그에 관련된 방법 및 시스템 |
| GB201117343D0 (en) * | 2011-10-07 | 2011-11-23 | Airbus Uk Ltd | Method and apparatus for measuring residual stresses in a component |
| DE102012208492A1 (de) * | 2012-05-22 | 2013-11-28 | Continental Teves Ag & Co. Ohg | Dehnmessstreifenanordnung |
| US8857271B2 (en) * | 2012-07-24 | 2014-10-14 | The Boeing Company | Wraparound strain gage assembly for brake rod |
| JP6987497B2 (ja) * | 2016-01-08 | 2022-01-05 | キヤノン株式会社 | 液体吐出モジュールおよび液体吐出ヘッド |
| WO2018199910A1 (en) * | 2017-04-24 | 2018-11-01 | Hewlett-Packard Development Company, L.P. | Fluid back pressure sensing with a strain sensor |
| CN110446612B (zh) * | 2017-04-24 | 2020-10-16 | 惠普发展公司,有限责任合伙企业 | 包括应变计传感器的流体喷射管芯 |
| WO2018199888A1 (en) * | 2017-04-24 | 2018-11-01 | Hewlett-Packard Development Company, L.P. | Fluid ejection dies including strain gauge sensors |
| EP3562678B1 (en) * | 2017-04-24 | 2024-10-23 | Hewlett-Packard Development Company, L.P. | Fluid ejection dies including strain gauge sensors |
| CN107329615B (zh) * | 2017-06-30 | 2020-06-16 | 上海天马微电子有限公司 | 显示面板及显示装置 |
| EP3609710B1 (en) * | 2017-07-18 | 2022-11-09 | Hewlett-Packard Development Company, L.P. | Dies including strain gauge sensors and temperature sensors |
| CN108731858B (zh) * | 2018-06-01 | 2019-07-30 | 中国石油大学(华东) | 一种mems压力传感器及其制作方法 |
| CN113795386B (zh) * | 2019-05-15 | 2023-09-01 | 惠普发展公司,有限责任合伙企业 | 包括应变仪传感器的集成电路 |
| CZ308886B6 (cs) * | 2019-10-11 | 2021-08-04 | 4Dot Mechatronic Systems S.R.O. | Snímač přetvoření a sestava pro měření přetvoření obsahující tento snímač |
| US11630018B2 (en) * | 2021-03-18 | 2023-04-18 | Becs Technology, Inc. | Calibrated load cell |
| EP4155488A1 (en) * | 2021-09-23 | 2023-03-29 | U-Shin Italia S.p.A. | Detection device and detection system for activating at least on function of an apparatus, and apparatus comprising the detection system |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4373399A (en) | 1981-02-05 | 1983-02-15 | Beloglazov Alexei V | Semiconductor strain gauge transducer |
| US4462018A (en) | 1982-11-05 | 1984-07-24 | Gulton Industries, Inc. | Semiconductor strain gauge with integral compensation resistors |
| JPS59217375A (ja) | 1983-05-26 | 1984-12-07 | Toyota Central Res & Dev Lab Inc | 半導体機械−電気変換装置 |
| US4658233A (en) | 1984-03-16 | 1987-04-14 | Fuji Electric Corporate Research & Development Ltd. | Strain gauge |
| US4793194A (en) | 1985-03-26 | 1988-12-27 | Endevco Corporation | Piezoresistive transducer |
| US4737473A (en) | 1985-03-26 | 1988-04-12 | Endevco Corporation | Piezoresistive transducer |
| JPS6276783A (ja) * | 1985-09-30 | 1987-04-08 | Toyota Central Res & Dev Lab Inc | 半導体圧力センサ及びその製造方法 |
| US4771638A (en) * | 1985-09-30 | 1988-09-20 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor pressure sensor |
| JPS6381867A (ja) | 1986-09-25 | 1988-04-12 | Yokogawa Electric Corp | 半導体拡散ストレンゲ−ジ |
| JPH03111729A (ja) * | 1989-09-26 | 1991-05-13 | Matsushita Electric Works Ltd | 圧力測定装置 |
| EP0544934B1 (de) | 1991-11-30 | 1996-10-02 | Endress U. Hauser Gmbh U. Co. | Verfahren zum Stabilisieren der Oberflächeneigenschaften von in Vakuum temperaturzubehandelnden Gegenständen |
| US5408253A (en) | 1992-08-03 | 1995-04-18 | Eastman Kodak Company | Integrated galvanometer scanning device |
| US5275055A (en) | 1992-08-31 | 1994-01-04 | Honeywell Inc. | Resonant gauge with microbeam driven in constant electric field |
| US5511427A (en) | 1993-07-21 | 1996-04-30 | Honeywell Inc. | Cantilevered microbeam temperature sensor |
| US5417115A (en) | 1993-07-23 | 1995-05-23 | Honeywell Inc. | Dielectrically isolated resonant microsensors |
| US5742222A (en) | 1995-05-26 | 1998-04-21 | Avi Systems, Inc. | Direct adhering polysilicon based strain gage |
| JPH09232595A (ja) | 1996-02-26 | 1997-09-05 | Denso Corp | 圧力検出装置 |
| FR2746919B1 (fr) | 1996-03-28 | 1998-04-24 | Commissariat Energie Atomique | Capteur a jauge de contrainte utilisant l'effet piezoresistif et son procede de fabrication |
| JPH09318474A (ja) | 1996-05-29 | 1997-12-12 | Tokai Rika Co Ltd | センサの製造方法 |
| US5929875A (en) * | 1996-07-24 | 1999-07-27 | Hewlett-Packard Company | Acoustic and ultrasonic monitoring of inkjet droplets |
| JPH11129472A (ja) * | 1997-10-31 | 1999-05-18 | Seiko Epson Corp | インクジェットヘッド、インクエンド検出器、インクジェット記録装置及びその制御方法 |
| JP2001138519A (ja) * | 1999-11-10 | 2001-05-22 | Casio Comput Co Ltd | インクジェットプリンタヘッド |
| DE10014984A1 (de) * | 2000-03-25 | 2001-10-18 | Bosch Gmbh Robert | Herstellungsverfahren für ein Dünnschicht-Bauelement, insbesondere einen Dünnschicht-Hochdrucksensor |
| JP2002131161A (ja) * | 2000-10-27 | 2002-05-09 | Denso Corp | 半導体圧力センサ |
| US6398329B1 (en) * | 2000-11-13 | 2002-06-04 | Hewlett-Packard Company | Thermal inkjet pen having a backpressure sensor |
| WO2002101347A1 (en) | 2001-06-08 | 2002-12-19 | Radi Medical Systems Ab | Miniaturized pressure sensor |
-
2003
- 2003-03-10 US US10/384,887 patent/US6739199B1/en not_active Expired - Lifetime
- 2003-09-25 TW TW092126532A patent/TWI306831B/zh not_active IP Right Cessation
-
2004
- 2004-03-09 EP EP04251352.3A patent/EP1457766B1/en not_active Expired - Lifetime
- 2004-03-09 KR KR1020040015821A patent/KR101083903B1/ko not_active Expired - Fee Related
- 2004-03-09 JP JP2004065493A patent/JP4146812B2/ja not_active Expired - Fee Related
-
2008
- 2008-05-21 JP JP2008132869A patent/JP2008275630A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004271527A (ja) | 2004-09-30 |
| TWI306831B (en) | 2009-03-01 |
| JP2008275630A (ja) | 2008-11-13 |
| TW200417503A (en) | 2004-09-16 |
| US6739199B1 (en) | 2004-05-25 |
| EP1457766A1 (en) | 2004-09-15 |
| KR101083903B1 (ko) | 2011-11-15 |
| KR20040081312A (ko) | 2004-09-21 |
| EP1457766B1 (en) | 2013-05-08 |
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