JP4146812B2 - Mems基板およびmems基板の形成方法 - Google Patents
Mems基板およびmems基板の形成方法 Download PDFInfo
- Publication number
- JP4146812B2 JP4146812B2 JP2004065493A JP2004065493A JP4146812B2 JP 4146812 B2 JP4146812 B2 JP 4146812B2 JP 2004065493 A JP2004065493 A JP 2004065493A JP 2004065493 A JP2004065493 A JP 2004065493A JP 4146812 B2 JP4146812 B2 JP 4146812B2
- Authority
- JP
- Japan
- Prior art keywords
- strain gauge
- substrate
- mems
- angle
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14153—Structures including a sensor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2206—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0045—Converters combining the concepts of switch-mode regulation and linear regulation, e.g. linear pre-regulator to switching converter, linear and switching converter in parallel, same converter or same transistor operating either in linear or switching mode
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Micromachines (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Description
ただし、Rはひずみゲージの抵抗を表し、pはひずみゲージ材料のバルク抵抗率を表し、Lはひずみゲージの実効長を表し、tはひずみゲージの厚みを表し、wはひずみゲージの幅を表す。
ただし、λは各脚部の長さを表し、Nは脚部の数を表す。したがって、必要なら、所与の抵抗(R)および幅(w)の場合に、ひずみゲージ30’の実効長(L)がサイズの制約を超えるときには、それぞれが長さλのN個の脚部に分割することができる。
ただし、Lは負荷までの支持されていない距離を表し、Xはひずみゲージ位置までの支持されていない距離を表し、tは基板の厚みを表し、Yは基板の変位を表す。その場合に、基板20の変位(Y)を変化させながら、基板20内のひずみが計算される。
Vr=[(Vout/Vin)ひずみ時−(Vout/Vin)ひずみなし時]
ただし、GFはひずみゲージのゲージ率を表し、vは基板の材料のポアソン比を表す。その場合に、正のひずみは基板20内の引張応力を表し、負のひずみは基板20内の圧縮応力を表す。温度に起因する抵抗変化が全てのひずみゲージ素子の場合に等しいので、ひずみ測定回路80のひずみ出力は必然的に温度補償される。
22 第1の表面
24 第2の表面
26 開口部
30 ひずみゲージ
40 礎材
50 誘電体層
52 誘電材料
62 導電材料
Claims (14)
- MEMS素子のための基板であって、
第1の表面を有する礎材と、
前記第1の表面上に形成されたポリシリコン材料を含むひずみゲージと、
該ひずみゲージ上に配置される誘電体材料と、
該誘電体材料を貫通して前記ひずみゲージと導通する導電材料とを含み、
前記基板は、該基板中を貫通して形成される少なくとも1つの開口部を有するように構成され、前記ひずみゲージは、前記少なくとも1つの開口部に隣接して形成されることを特徴とするMEMS基板。 - 前記第1の表面上に形成される誘電体層をさらに含み、
前記ひずみゲージは、前記第1の表面上の前記誘電体層上に形成されることを特徴とする請求項1に記載のMEMS基板。 - 前記礎材はシリコンを含み、前記誘電体層はテトラエチルオルソシリケート、シラン、二酸化シリコン、炭化シリコンおよび窒化シリコンのうちの1つを含むことを特徴とする請求項2に記載のMEMS基板。
- 前記ひずみゲージの前記ポリシリコン材料はドーパント材料をドープされ、前記ポリシリコン材料および前記ドーパント材料はアニールされることを特徴とする請求項1に記載のMEMS基板。
- 前記ドーパント材料はホウ素およびリンのうちの1つを含むことを特徴とする請求項4に記載のMEMS基板。
- 前記誘電体材料は、りんガラスおよびテトラエチルオルソシリケートのうちの1つを含むことを特徴とする請求項1に記載のMEMS基板。
- 前記誘電体材料は、その中に前記ひずみゲージへの少なくとも1つの開口部を有し、前記導電材料は、前記誘電体材料内の前記少なくとも1つの開口部内に堆積されることを特徴とする請求項1に記載のMEMS基板。
- 前記ひずみゲージは、前記基板の軸に対して第1の角度に向けられる第1の素子と、第2の角度に向けられる第2の素子と、第3の角度に向けられる第3の素子とを含み、前記第2の角度は前記第1の角度に対して概ね垂直であり、前記第3の角度は前記第1の角度および前記第2の角度を概ね二等分することを特徴とする請求項1に記載のMEMS基板。
- 前記MEMS素子は流体吐出素子を含み、前記基板を貫通する前記少なくとも1つの開口部は前記基板を貫通する流体通路を含むことを特徴とする請求項1に記載のMEMS基板。
- MEMS基板を形成する方法であって、
第1の表面を有する礎材を配設するステップと、
前記第1の表面上にポリシリコン材料を含むひずみゲージを形成するステップと、
前記ひずみゲージ上に誘電体材料を配置するステップと、
前記誘電体材料を貫通して導電材料と前記ひずみゲージとを接触させるステップとを含み、
前記基板は、該基板中を貫通して形成される少なくとも1つの開口部を有するように構成され、前記ひずみゲージは、前記少なくとも1つの開口部に隣接して形成されることを特徴とするMEMS基板の形成方法。 - 前記第1の表面上に誘電体層を形成するステップをさらに含み、前記ひずみゲージを形成するステップは、前記誘電体層上に前記ひずみゲージを形成するステップを含む請求項10に記載のMEMS基板の形成方法。
- 前記導電材料と前記ひずみゲージとを接触させるステップは、前記誘電体材料内に前記ひずみゲージへの少なくとも1つの開口部を形成するサブステップと、前記少なくとも1つの開口部内に前記導電材料を堆積するサブステップとを含むことを特徴とする請求項10に記載のMEMS基板の形成方法。
- 前記ひずみゲージを形成するステップは、前記ひずみゲージの第1の素子を前記基板の軸に対して第1の角度に向けるサブステップと、前記ひずみゲージの第2の素子を第2の角度に向けるサブステップと、前記ひずみゲージの第3の素子を第3の角度に向けるサブステップとを含み、前記第2の角度は前記第1の角度に対して概ね垂直であり、前記第3の角度は前記第1の角度および前記第2の角度を概ね二等分することを特徴とする請求項10に記載のMEMS基板の形成方法。
- 前記MEMS素子は流体吐出素子を含み、前記基板を貫通する前記少なくとも1つの開口部は前記基板を貫通する流体通路を含むことを特徴とする請求項10に記載のMEMS基板の形成方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/384,887 US6739199B1 (en) | 2003-03-10 | 2003-03-10 | Substrate and method of forming substrate for MEMS device with strain gage |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008132869A Division JP2008275630A (ja) | 2003-03-10 | 2008-05-21 | 流体吐出素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004271527A JP2004271527A (ja) | 2004-09-30 |
JP2004271527A5 JP2004271527A5 (ja) | 2007-08-23 |
JP4146812B2 true JP4146812B2 (ja) | 2008-09-10 |
Family
ID=32312413
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004065493A Expired - Fee Related JP4146812B2 (ja) | 2003-03-10 | 2004-03-09 | Mems基板およびmems基板の形成方法 |
JP2008132869A Pending JP2008275630A (ja) | 2003-03-10 | 2008-05-21 | 流体吐出素子 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008132869A Pending JP2008275630A (ja) | 2003-03-10 | 2008-05-21 | 流体吐出素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6739199B1 (ja) |
EP (1) | EP1457766B1 (ja) |
JP (2) | JP4146812B2 (ja) |
KR (1) | KR101083903B1 (ja) |
TW (1) | TWI306831B (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004358799A (ja) * | 2003-06-04 | 2004-12-24 | Canon Inc | キャリッジ駆動制御方法 |
US6988412B1 (en) * | 2004-11-30 | 2006-01-24 | Endevco Corporation | Piezoresistive strain concentrator |
WO2008048212A2 (en) * | 2005-07-07 | 2008-04-24 | The Regents Of The University Of California | Infrared sensor systems and devices |
WO2008070115A2 (en) * | 2006-12-05 | 2008-06-12 | Wispry, Inc. | Substrates with slotted metals and related methods |
JP5026144B2 (ja) * | 2007-05-18 | 2012-09-12 | 日本電信電話株式会社 | 記憶素子 |
KR100917649B1 (ko) * | 2007-11-12 | 2009-09-17 | 주식회사 이오테크닉스 | 플렉시블 기판의 평탄화 방법 및 평탄화 장치 |
WO2010089234A1 (en) * | 2009-02-03 | 2010-08-12 | Oce-Technologies B.V. | A print head and a method for measuring on the print head |
US7938016B2 (en) * | 2009-03-20 | 2011-05-10 | Freescale Semiconductor, Inc. | Multiple layer strain gauge |
EP2576225B1 (en) * | 2010-05-27 | 2020-01-15 | Hewlett-Packard Development Company, L.P. | Printhead and related methods and systems |
GB201117343D0 (en) * | 2011-10-07 | 2011-11-23 | Airbus Uk Ltd | Method and apparatus for measuring residual stresses in a component |
DE102012208492A1 (de) * | 2012-05-22 | 2013-11-28 | Continental Teves Ag & Co. Ohg | Dehnmessstreifenanordnung |
US8857271B2 (en) * | 2012-07-24 | 2014-10-14 | The Boeing Company | Wraparound strain gage assembly for brake rod |
JP6987497B2 (ja) * | 2016-01-08 | 2022-01-05 | キヤノン株式会社 | 液体吐出モジュールおよび液体吐出ヘッド |
US10955299B2 (en) * | 2017-04-24 | 2021-03-23 | Hewlett-Packard Development Company, L.P. | Fluid ejection dies including strain gauge sensors |
EP3558681B1 (en) | 2017-04-24 | 2021-12-15 | Hewlett-Packard Development Company, L.P. | Fluid ejection dies including strain gauge sensors |
EP3562678A4 (en) * | 2017-04-24 | 2020-08-12 | Hewlett-Packard Development Company, L.P. | LIQUID EMISSION NOZZLES WITH STRAIN MEASURING SENSORS |
EP3562675B1 (en) * | 2017-04-24 | 2023-01-11 | Hewlett-Packard Development Company, L.P. | Fluid back pressure sensing with a strain sensor |
CN107329615B (zh) * | 2017-06-30 | 2020-06-16 | 上海天马微电子有限公司 | 显示面板及显示装置 |
EP3609710B1 (en) * | 2017-07-18 | 2022-11-09 | Hewlett-Packard Development Company, L.P. | Dies including strain gauge sensors and temperature sensors |
CN108731858B (zh) * | 2018-06-01 | 2019-07-30 | 中国石油大学(华东) | 一种mems压力传感器及其制作方法 |
WO2020231423A1 (en) * | 2019-05-15 | 2020-11-19 | Hewlett-Packard Development Company, L.P. | Integrated circuits including strain gauge sensors |
CZ308886B6 (cs) * | 2019-10-11 | 2021-08-04 | 4Dot Mechatronic Systems S.R.O. | Snímač přetvoření a sestava pro měření přetvoření obsahující tento snímač |
US11630018B2 (en) * | 2021-03-18 | 2023-04-18 | Becs Technology, Inc. | Calibrated load cell |
EP4155488A1 (en) * | 2021-09-23 | 2023-03-29 | U-Shin Italia S.p.A. | Detection device and detection system for activating at least on function of an apparatus, and apparatus comprising the detection system |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4373399A (en) | 1981-02-05 | 1983-02-15 | Beloglazov Alexei V | Semiconductor strain gauge transducer |
US4462018A (en) | 1982-11-05 | 1984-07-24 | Gulton Industries, Inc. | Semiconductor strain gauge with integral compensation resistors |
JPS59217375A (ja) | 1983-05-26 | 1984-12-07 | Toyota Central Res & Dev Lab Inc | 半導体機械−電気変換装置 |
US4658233A (en) | 1984-03-16 | 1987-04-14 | Fuji Electric Corporate Research & Development Ltd. | Strain gauge |
US4793194A (en) | 1985-03-26 | 1988-12-27 | Endevco Corporation | Piezoresistive transducer |
US4737473A (en) | 1985-03-26 | 1988-04-12 | Endevco Corporation | Piezoresistive transducer |
JPS6276783A (ja) * | 1985-09-30 | 1987-04-08 | Toyota Central Res & Dev Lab Inc | 半導体圧力センサ及びその製造方法 |
US4771638A (en) * | 1985-09-30 | 1988-09-20 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor pressure sensor |
JPS6381867A (ja) | 1986-09-25 | 1988-04-12 | Yokogawa Electric Corp | 半導体拡散ストレンゲ−ジ |
JPH03111729A (ja) * | 1989-09-26 | 1991-05-13 | Matsushita Electric Works Ltd | 圧力測定装置 |
EP0544934B1 (de) | 1991-11-30 | 1996-10-02 | Endress U. Hauser Gmbh U. Co. | Verfahren zum Stabilisieren der Oberflächeneigenschaften von in Vakuum temperaturzubehandelnden Gegenständen |
US5408253A (en) | 1992-08-03 | 1995-04-18 | Eastman Kodak Company | Integrated galvanometer scanning device |
US5275055A (en) | 1992-08-31 | 1994-01-04 | Honeywell Inc. | Resonant gauge with microbeam driven in constant electric field |
US5511427A (en) | 1993-07-21 | 1996-04-30 | Honeywell Inc. | Cantilevered microbeam temperature sensor |
US5417115A (en) | 1993-07-23 | 1995-05-23 | Honeywell Inc. | Dielectrically isolated resonant microsensors |
US5742222A (en) | 1995-05-26 | 1998-04-21 | Avi Systems, Inc. | Direct adhering polysilicon based strain gage |
JPH09232595A (ja) | 1996-02-26 | 1997-09-05 | Denso Corp | 圧力検出装置 |
FR2746919B1 (fr) | 1996-03-28 | 1998-04-24 | Commissariat Energie Atomique | Capteur a jauge de contrainte utilisant l'effet piezoresistif et son procede de fabrication |
JPH09318474A (ja) | 1996-05-29 | 1997-12-12 | Tokai Rika Co Ltd | センサの製造方法 |
US5929875A (en) * | 1996-07-24 | 1999-07-27 | Hewlett-Packard Company | Acoustic and ultrasonic monitoring of inkjet droplets |
JPH11129472A (ja) * | 1997-10-31 | 1999-05-18 | Seiko Epson Corp | インクジェットヘッド、インクエンド検出器、インクジェット記録装置及びその制御方法 |
JP2001138519A (ja) * | 1999-11-10 | 2001-05-22 | Casio Comput Co Ltd | インクジェットプリンタヘッド |
DE10014984A1 (de) * | 2000-03-25 | 2001-10-18 | Bosch Gmbh Robert | Herstellungsverfahren für ein Dünnschicht-Bauelement, insbesondere einen Dünnschicht-Hochdrucksensor |
JP2002131161A (ja) * | 2000-10-27 | 2002-05-09 | Denso Corp | 半導体圧力センサ |
US6398329B1 (en) * | 2000-11-13 | 2002-06-04 | Hewlett-Packard Company | Thermal inkjet pen having a backpressure sensor |
US7017420B2 (en) | 2001-06-08 | 2006-03-28 | Silex Microsystems Ab | Miniaturized pressure sensor |
-
2003
- 2003-03-10 US US10/384,887 patent/US6739199B1/en not_active Expired - Lifetime
- 2003-09-25 TW TW092126532A patent/TWI306831B/zh not_active IP Right Cessation
-
2004
- 2004-03-09 KR KR1020040015821A patent/KR101083903B1/ko active IP Right Grant
- 2004-03-09 JP JP2004065493A patent/JP4146812B2/ja not_active Expired - Fee Related
- 2004-03-09 EP EP04251352.3A patent/EP1457766B1/en not_active Expired - Fee Related
-
2008
- 2008-05-21 JP JP2008132869A patent/JP2008275630A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TWI306831B (en) | 2009-03-01 |
EP1457766B1 (en) | 2013-05-08 |
US6739199B1 (en) | 2004-05-25 |
EP1457766A1 (en) | 2004-09-15 |
KR101083903B1 (ko) | 2011-11-15 |
KR20040081312A (ko) | 2004-09-21 |
TW200417503A (en) | 2004-09-16 |
JP2008275630A (ja) | 2008-11-13 |
JP2004271527A (ja) | 2004-09-30 |
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