JP4139575B2 - シリコン含有２層レジスト用下層レジスト組成物 - Google Patents

シリコン含有２層レジスト用下層レジスト組成物 Download PDF

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Publication number
JP4139575B2
JP4139575B2 JP2001115597A JP2001115597A JP4139575B2 JP 4139575 B2 JP4139575 B2 JP 4139575B2 JP 2001115597 A JP2001115597 A JP 2001115597A JP 2001115597 A JP2001115597 A JP 2001115597A JP 4139575 B2 JP4139575 B2 JP 4139575B2
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JP
Japan
Prior art keywords
group
layer resist
silicon
resist composition
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001115597A
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English (en)
Japanese (ja)
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JP2002311594A5 (enExample
JP2002311594A (ja
Inventor
昭一郎 安波
一良 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001115597A priority Critical patent/JP4139575B2/ja
Priority to US10/118,896 priority patent/US6777161B2/en
Publication of JP2002311594A publication Critical patent/JP2002311594A/ja
Publication of JP2002311594A5 publication Critical patent/JP2002311594A5/ja
Application granted granted Critical
Publication of JP4139575B2 publication Critical patent/JP4139575B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/11—Vinyl alcohol polymer or derivative
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/128—Radiation-activated cross-linking agent containing

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2001115597A 2001-04-13 2001-04-13 シリコン含有２層レジスト用下層レジスト組成物 Expired - Fee Related JP4139575B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001115597A JP4139575B2 (ja) 2001-04-13 2001-04-13 シリコン含有２層レジスト用下層レジスト組成物
US10/118,896 US6777161B2 (en) 2001-04-13 2002-04-10 Lower layer resist composition for silicon-containing two-layer resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001115597A JP4139575B2 (ja) 2001-04-13 2001-04-13 シリコン含有２層レジスト用下層レジスト組成物

Publications (3)

Publication Number Publication Date
JP2002311594A JP2002311594A (ja) 2002-10-23
JP2002311594A5 JP2002311594A5 (enExample) 2006-01-19
JP4139575B2 true JP4139575B2 (ja) 2008-08-27

Family

ID=18966468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001115597A Expired - Fee Related JP4139575B2 (ja) 2001-04-13 2001-04-13 シリコン含有２層レジスト用下層レジスト組成物

Country Status (2)

Country Link
US (1) US6777161B2 (enExample)
JP (1) JP4139575B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003112321A (ja) * 2001-10-02 2003-04-15 Sony Corp 加工用マスター基材及び同マスター基材の製造方法
TWI258635B (en) 2002-11-27 2006-07-21 Tokyo Ohka Kogyo Co Ltd Undercoating material for wiring, embedded material, and wiring formation method
KR100512171B1 (ko) * 2003-01-24 2005-09-02 삼성전자주식회사 하층 레지스트용 조성물
WO2005089150A2 (en) * 2004-03-12 2005-09-29 Fujifilm Electronic Materials Usa Inc. Thermally cured undercoat for lithographic application
JP4575214B2 (ja) * 2005-04-04 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
JP2008076889A (ja) * 2006-09-22 2008-04-03 Jsr Corp レジスト下層膜用組成物及びその製造方法
WO2008038544A1 (fr) 2006-09-28 2008-04-03 Jsr Corporation Procédé de formation de film de couche inférieure de résist, composition de film de couche inférieure de résist pour une utilisation dans le procédé, et procédé de formation de motif.
JP5015892B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法
JP5015891B2 (ja) * 2008-10-02 2012-08-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法
WO2011040340A1 (ja) * 2009-09-29 2011-04-07 Jsr株式会社 パターン形成方法及びレジスト下層膜形成用組成物
US8586290B2 (en) * 2009-10-23 2013-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning process and chemical amplified photoresist composition
US8323868B2 (en) * 2009-11-06 2012-12-04 International Business Machines Corporation Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
JP6167588B2 (ja) * 2012-03-29 2017-07-26 Jsr株式会社 レジスト下層膜形成用組成物及びパターン形成方法
JP6468137B2 (ja) * 2014-10-01 2019-02-13 信越化学工業株式会社 化学増幅型ネガ型レジスト材料、光硬化性ドライフィルム及びその製造方法、パターン形成方法並びに電気・電子部品保護用皮膜
FR3074180B1 (fr) * 2017-11-24 2021-01-01 Arkema France Procede de controle de la planeite d'un empilement polymerique
JP7611785B2 (ja) * 2021-07-06 2025-01-10 信越化学工業株式会社 密着膜形成材料、これを用いた密着膜の形成方法、及び密着膜形成材料を用いたパターン形成方法
WO2024005194A1 (ja) * 2022-07-01 2024-01-04 三菱瓦斯化学株式会社 ポリフェノール化合物、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜、及びパターン形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6323287B1 (en) 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
US6492092B1 (en) 1999-03-12 2002-12-10 Arch Specialty Chemicals, Inc. Hydroxy-epoxide thermally cured undercoat for 193 NM lithography
DE50015750D1 (de) 1999-04-28 2009-11-12 Qimonda Ag Bottomresist
US6420088B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer

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Publication number Publication date
US6777161B2 (en) 2004-08-17
JP2002311594A (ja) 2002-10-23
US20030059552A1 (en) 2003-03-27

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