JP2002311594A5 - - Google Patents
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- Publication number
- JP2002311594A5 JP2002311594A5 JP2001115597A JP2001115597A JP2002311594A5 JP 2002311594 A5 JP2002311594 A5 JP 2002311594A5 JP 2001115597 A JP2001115597 A JP 2001115597A JP 2001115597 A JP2001115597 A JP 2001115597A JP 2002311594 A5 JP2002311594 A5 JP 2002311594A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- layer resist
- resist composition
- resist
- sulfonic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- -1 tertiary alcohol ester Chemical class 0.000 description 2
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000007965 phenolic acids Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001115597A JP4139575B2 (ja) | 2001-04-13 | 2001-04-13 | シリコン含有２層レジスト用下層レジスト組成物 |
| US10/118,896 US6777161B2 (en) | 2001-04-13 | 2002-04-10 | Lower layer resist composition for silicon-containing two-layer resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001115597A JP4139575B2 (ja) | 2001-04-13 | 2001-04-13 | シリコン含有２層レジスト用下層レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002311594A JP2002311594A (ja) | 2002-10-23 |
| JP2002311594A5 true JP2002311594A5 (enExample) | 2006-01-19 |
| JP4139575B2 JP4139575B2 (ja) | 2008-08-27 |
Family
ID=18966468
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001115597A Expired - Fee Related JP4139575B2 (ja) | 2001-04-13 | 2001-04-13 | シリコン含有２層レジスト用下層レジスト組成物 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6777161B2 (enExample) |
| JP (1) | JP4139575B2 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003112321A (ja) * | 2001-10-02 | 2003-04-15 | Sony Corp | 加工用マスター基材及び同マスター基材の製造方法 |
| US7238462B2 (en) | 2002-11-27 | 2007-07-03 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating material for wiring, embedded material, and wiring formation method |
| KR100512171B1 (ko) * | 2003-01-24 | 2005-09-02 | 삼성전자주식회사 | 하층 레지스트용 조성물 |
| JP4612672B2 (ja) * | 2004-03-12 | 2011-01-12 | フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド | リソグラフィ用途のための熱硬化性アンダーコート |
| JP4575214B2 (ja) * | 2005-04-04 | 2010-11-04 | 信越化学工業株式会社 | レジスト下層膜材料およびパターン形成方法 |
| JP2008076889A (ja) * | 2006-09-22 | 2008-04-03 | Jsr Corp | レジスト下層膜用組成物及びその製造方法 |
| WO2008038544A1 (fr) * | 2006-09-28 | 2008-04-03 | Jsr Corporation | Procédé de formation de film de couche inférieure de résist, composition de film de couche inférieure de résist pour une utilisation dans le procédé, et procédé de formation de motif. |
| JP5015891B2 (ja) * | 2008-10-02 | 2012-08-29 | 信越化学工業株式会社 | 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法 |
| JP5015892B2 (ja) * | 2008-10-02 | 2012-08-29 | 信越化学工業株式会社 | ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法 |
| KR101411737B1 (ko) | 2009-09-29 | 2014-06-25 | 제이에스알 가부시끼가이샤 | 패턴 형성 방법 및 레지스트 하층막 형성용 조성물 |
| US8586290B2 (en) | 2009-10-23 | 2013-11-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Patterning process and chemical amplified photoresist composition |
| US8323868B2 (en) * | 2009-11-06 | 2012-12-04 | International Business Machines Corporation | Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof |
| JP5597616B2 (ja) * | 2011-10-03 | 2014-10-01 | 富士フイルム株式会社 | ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク |
| JP6167588B2 (ja) * | 2012-03-29 | 2017-07-26 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
| JP6468137B2 (ja) * | 2014-10-01 | 2019-02-13 | 信越化学工業株式会社 | 化学増幅型ネガ型レジスト材料、光硬化性ドライフィルム及びその製造方法、パターン形成方法並びに電気・電子部品保護用皮膜 |
| FR3074180B1 (fr) * | 2017-11-24 | 2021-01-01 | Arkema France | Procede de controle de la planeite d'un empilement polymerique |
| JP7611785B2 (ja) * | 2021-07-06 | 2025-01-10 | 信越化学工業株式会社 | 密着膜形成材料、これを用いた密着膜の形成方法、及び密着膜形成材料を用いたパターン形成方法 |
| TW202411187A (zh) * | 2022-07-01 | 2024-03-16 | 日商三菱瓦斯化學股份有限公司 | 多酚化合物、微影用膜形成用組成物、微影用下層膜及圖型形成方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6492092B1 (en) | 1999-03-12 | 2002-12-10 | Arch Specialty Chemicals, Inc. | Hydroxy-epoxide thermally cured undercoat for 193 NM lithography |
| US6323287B1 (en) | 1999-03-12 | 2001-11-27 | Arch Specialty Chemicals, Inc. | Hydroxy-amino thermally cured undercoat for 193 NM lithography |
| DE50015750D1 (de) * | 1999-04-28 | 2009-11-12 | Qimonda Ag | Bottomresist |
| US6420088B1 (en) * | 2000-06-23 | 2002-07-16 | International Business Machines Corporation | Antireflective silicon-containing compositions as hardmask layer |
-
2001
- 2001-04-13 JP JP2001115597A patent/JP4139575B2/ja not_active Expired - Fee Related
-
2002
- 2002-04-10 US US10/118,896 patent/US6777161B2/en not_active Expired - Lifetime
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