JP4137471B2 - ダイシング方法、集積回路チップの検査方法及び基板保持装置 - Google Patents

ダイシング方法、集積回路チップの検査方法及び基板保持装置 Download PDF

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Publication number
JP4137471B2
JP4137471B2 JP2002057772A JP2002057772A JP4137471B2 JP 4137471 B2 JP4137471 B2 JP 4137471B2 JP 2002057772 A JP2002057772 A JP 2002057772A JP 2002057772 A JP2002057772 A JP 2002057772A JP 4137471 B2 JP4137471 B2 JP 4137471B2
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JP
Japan
Prior art keywords
adhesive film
integrated circuit
semiconductor substrate
jig
circuit chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002057772A
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English (en)
Japanese (ja)
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JP2003258067A (ja
Inventor
清 竹腰
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Priority to JP2002057772A priority Critical patent/JP4137471B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to EP03743517A priority patent/EP1484791A4/en
Priority to CNB038006375A priority patent/CN1327491C/zh
Priority to KR1020037017144A priority patent/KR100691034B1/ko
Priority to PCT/JP2003/002236 priority patent/WO2003075331A1/ja
Priority to US10/492,530 priority patent/US8101436B2/en
Priority to TW092104441A priority patent/TW200403736A/zh
Publication of JP2003258067A publication Critical patent/JP2003258067A/ja
Application granted granted Critical
Publication of JP4137471B2 publication Critical patent/JP4137471B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2002057772A 2002-03-04 2002-03-04 ダイシング方法、集積回路チップの検査方法及び基板保持装置 Expired - Fee Related JP4137471B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002057772A JP4137471B2 (ja) 2002-03-04 2002-03-04 ダイシング方法、集積回路チップの検査方法及び基板保持装置
CNB038006375A CN1327491C (zh) 2002-03-04 2003-02-27 切割方法、集成电路元件的检查方法、基板保持装置和粘接薄膜
KR1020037017144A KR100691034B1 (ko) 2002-03-04 2003-02-27 다이싱 방법, 집적 회로 소자의 검사 방법, 기판 유지장치 및 점착 필름
PCT/JP2003/002236 WO2003075331A1 (fr) 2002-03-04 2003-02-27 Procede de decoupage en des, procede d'inspection d'elements de circuits integres, dispositif de support de substrat et film auto-adhesif
EP03743517A EP1484791A4 (en) 2002-03-04 2003-02-27 CUTTING METHOD, METHOD FOR EXAMINING AN INTEGRATED CIRCUIT ELECTRONIC, SUBSTRATE MOUNTING DEVICE AND PRINTED FILM
US10/492,530 US8101436B2 (en) 2002-03-04 2003-02-27 Dicing method, method of inspecting integrated circuit element, substrate holding device, and pressure sensitive adhesive film
TW092104441A TW200403736A (en) 2002-03-04 2003-03-03 Dicing method, inspecting method for integrated circuit chip, substrate-retaining apparatus, and adhesive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002057772A JP4137471B2 (ja) 2002-03-04 2002-03-04 ダイシング方法、集積回路チップの検査方法及び基板保持装置

Publications (2)

Publication Number Publication Date
JP2003258067A JP2003258067A (ja) 2003-09-12
JP4137471B2 true JP4137471B2 (ja) 2008-08-20

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Family Applications (1)

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JP2002057772A Expired - Fee Related JP4137471B2 (ja) 2002-03-04 2002-03-04 ダイシング方法、集積回路チップの検査方法及び基板保持装置

Country Status (7)

Country Link
US (1) US8101436B2 (enExample)
EP (1) EP1484791A4 (enExample)
JP (1) JP4137471B2 (enExample)
KR (1) KR100691034B1 (enExample)
CN (1) CN1327491C (enExample)
TW (1) TW200403736A (enExample)
WO (1) WO2003075331A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8652858B2 (en) 2011-06-15 2014-02-18 Samsung Electronics Co., Ltd. Chip testing method

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Publication number Priority date Publication date Assignee Title
US8652858B2 (en) 2011-06-15 2014-02-18 Samsung Electronics Co., Ltd. Chip testing method

Also Published As

Publication number Publication date
CN1327491C (zh) 2007-07-18
EP1484791A1 (en) 2004-12-08
TW200403736A (en) 2004-03-01
EP1484791A4 (en) 2008-03-19
US8101436B2 (en) 2012-01-24
JP2003258067A (ja) 2003-09-12
TWI309062B (enExample) 2009-04-21
WO2003075331A1 (fr) 2003-09-12
KR100691034B1 (ko) 2007-03-09
KR20040013001A (ko) 2004-02-11
CN1533594A (zh) 2004-09-29
US20050003635A1 (en) 2005-01-06

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