CN1327491C - 切割方法、集成电路元件的检查方法、基板保持装置和粘接薄膜 - Google Patents

切割方法、集成电路元件的检查方法、基板保持装置和粘接薄膜 Download PDF

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Publication number
CN1327491C
CN1327491C CNB038006375A CN03800637A CN1327491C CN 1327491 C CN1327491 C CN 1327491C CN B038006375 A CNB038006375 A CN B038006375A CN 03800637 A CN03800637 A CN 03800637A CN 1327491 C CN1327491 C CN 1327491C
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China
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integrated circuit
semiconductor substrate
cementability
energy
adhering film
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Expired - Fee Related
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CNB038006375A
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Chinese (zh)
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CN1533594A (zh
Inventor
竹腰清
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNB038006375A 2002-03-04 2003-02-27 切割方法、集成电路元件的检查方法、基板保持装置和粘接薄膜 Expired - Fee Related CN1327491C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002057772A JP4137471B2 (ja) 2002-03-04 2002-03-04 ダイシング方法、集積回路チップの検査方法及び基板保持装置
JP057772/2002 2002-03-04

Publications (2)

Publication Number Publication Date
CN1533594A CN1533594A (zh) 2004-09-29
CN1327491C true CN1327491C (zh) 2007-07-18

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CNB038006375A Expired - Fee Related CN1327491C (zh) 2002-03-04 2003-02-27 切割方法、集成电路元件的检查方法、基板保持装置和粘接薄膜

Country Status (7)

Country Link
US (1) US8101436B2 (enExample)
EP (1) EP1484791A4 (enExample)
JP (1) JP4137471B2 (enExample)
KR (1) KR100691034B1 (enExample)
CN (1) CN1327491C (enExample)
TW (1) TW200403736A (enExample)
WO (1) WO2003075331A1 (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004096483A1 (ja) * 2003-04-25 2004-11-11 Nitto Denko Corporation レーザー加工品の製造方法、およびそれに用いるレーザー加工用粘着シート
JP4093930B2 (ja) * 2003-07-17 2008-06-04 株式会社東京精密 フレーム搬送プローバ
WO2005063435A1 (ja) * 2003-12-25 2005-07-14 Nitto Denko Corporation レーザー加工用保護シート及びレーザー加工品の製造方法
JP2005223244A (ja) * 2004-02-09 2005-08-18 Tokyo Seimitsu Co Ltd チップの飛び出し位置検出方法
JP4381860B2 (ja) * 2004-03-24 2009-12-09 日東電工株式会社 補強半導体ウエハに固定された補強板の分離方法およびその装置
TWI287838B (en) * 2004-11-11 2007-10-01 Yamaha Corp Semiconductor device, semiconductor wafer, chip size package, and methods of manufacturing and inspection therefor
CN100385691C (zh) * 2004-12-08 2008-04-30 深圳市方大国科光电技术有限公司 倒装发光二极管的划片方法
JP4854061B2 (ja) * 2005-01-14 2012-01-11 日東電工株式会社 レーザー加工品の製造方法及びレーザー加工用保護シート
JP4873863B2 (ja) * 2005-01-14 2012-02-08 日東電工株式会社 レーザー加工品の製造方法及びレーザー加工用粘着シート
DE102005024431B4 (de) 2005-05-24 2009-08-06 Infineon Technologies Ag Verfahren zur Herstellung von Halbleiterbauteilen unter Verwendung einer Trägerplatte mit doppelseitig klebender Klebstofffolie
JP2007036143A (ja) * 2005-07-29 2007-02-08 Disco Abrasive Syst Ltd 半導体ウエーハの加工方法
JP2007088292A (ja) * 2005-09-22 2007-04-05 Fujifilm Corp 板状部材の切断方法
JP2007095780A (ja) * 2005-09-27 2007-04-12 Oki Electric Ind Co Ltd 半導体装置製造用治具と半導体装置製造方法
US20070297885A1 (en) * 2006-06-27 2007-12-27 Jean Michel Processe Product designed to be used with handling system
KR100787721B1 (ko) * 2006-07-25 2007-12-24 제일모직주식회사 박막 웨이퍼의 가공에 적합한 다이싱 다이 본드 필름
JP5196838B2 (ja) * 2007-04-17 2013-05-15 リンテック株式会社 接着剤付きチップの製造方法
JP5192790B2 (ja) * 2007-11-28 2013-05-08 Ｔｏｗａ株式会社 基板の切断方法及び装置
JP2009272503A (ja) * 2008-05-09 2009-11-19 Disco Abrasive Syst Ltd フィルム状接着剤の破断装置及び破断方法
JP5275834B2 (ja) * 2009-02-04 2013-08-28 古河電気工業株式会社 ウエハ加工用フィルム及びウエハ加工用フィルムを用いて半導体装置を製造する方法
JP5490425B2 (ja) * 2009-02-26 2014-05-14 ラピスセミコンダクタ株式会社 半導体チップの電気特性測定方法
JP4630377B2 (ja) * 2009-03-11 2011-02-09 古河電気工業株式会社 半導体装置の製造方法
DE102009013353B3 (de) * 2009-03-16 2010-10-07 Siemens Aktiengesellschaft Verfahren zur Bestimmung von Rüstungen für konstante Tische von Bestückautomaten
JP2010272639A (ja) * 2009-05-20 2010-12-02 Disco Abrasive Syst Ltd 研削装置
JP2011047782A (ja) 2009-08-27 2011-03-10 Tokyo Electron Ltd 半導体素子評価方法
JP5368290B2 (ja) * 2009-12-18 2013-12-18 株式会社アドバンテスト キャリア組立装置
JP5695427B2 (ja) * 2011-01-14 2015-04-08 株式会社東京精密 半導体ウエハの割断方法及び割断装置
US8409925B2 (en) * 2011-06-09 2013-04-02 Hung-Jen LEE Chip package structure and manufacturing method thereof
KR20120138517A (ko) 2011-06-15 2012-12-26 삼성전자주식회사 칩 고정 장치 및 이를 이용한 칩의 테스트 방법
JP5943742B2 (ja) * 2012-07-04 2016-07-05 三菱電機株式会社 半導体試験治具およびそれを用いた半導体試験方法
JP6043150B2 (ja) * 2012-10-29 2016-12-14 三星ダイヤモンド工業株式会社 積層脆性材料基板のブレイク装置および積層脆性材料基板のブレイク方法
TWI549268B (zh) * 2013-02-27 2016-09-11 精材科技股份有限公司 晶圓封裝方法
JP6043959B2 (ja) * 2013-03-26 2016-12-14 パナソニックＩｐマネジメント株式会社 半導体パッケージの製造方法、半導体チップ支持キャリア及びチップ搭載装置
KR101673031B1 (ko) * 2015-07-31 2016-11-07 그래핀스퀘어 주식회사 그래핀 필름의 제조 장치 및 방법
TWI889995B (zh) 2016-01-15 2025-07-11 荷蘭商庫力克及索發荷蘭公司 放置超小或超薄之離散組件
US10535572B2 (en) * 2016-04-15 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Device arrangement structure assembly and test method
KR102523850B1 (ko) * 2016-07-11 2023-04-21 주식회사 미코세라믹스 척 구조물 및 척 구조물을 갖는 칩 분리 장치
EP3533850A4 (en) * 2016-10-27 2020-06-17 Mitsui Chemicals Tohcello, Inc. MANUFACTURING METHOD FOR ELECTRONIC DEVICE, ADHESIVE FILM FOR MANUFACTURING METHOD FOR ELECTRONIC DEVICE AND TEST DEVICE FOR ELECTRONIC COMPONENTS
KR102243345B1 (ko) 2016-10-27 2021-04-21 미쓰이 가가쿠 토세로 가부시키가이샤 전자 장치의 제조 방법, 전자 장치 제조용 점착성 필름 및 전자 부품 시험 장치
WO2018086698A1 (en) * 2016-11-10 2018-05-17 Applied Materials, Inc. Holding arrangement for holding a substrate, carrier including the holding arrangement, processing system employing the carrier, and method for releasing a substrate from a holding arrangement
CN111052313A (zh) * 2017-08-10 2020-04-21 东京毅力科创株式会社 基板处理方法
JP7119310B2 (ja) * 2017-08-31 2022-08-17 富士電機株式会社 半導体試験装置
JP6886379B2 (ja) * 2017-09-28 2021-06-16 Ｔｏｗａ株式会社 保持部材、保持部材の製造方法、検査装置及び切断装置
JP7209246B2 (ja) * 2018-09-25 2023-01-20 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
EP3924999A4 (en) * 2019-02-15 2022-11-02 Kulicke & Soffa Netherlands B.V. DYNAMIC SEPARATOR TAPES FOR MOUNTING DISCRETE COMPONENTS
CN109994416A (zh) * 2019-04-12 2019-07-09 德淮半导体有限公司 蓝膜、蓝膜带及制作方法
CN110676219B (zh) * 2019-10-31 2021-05-25 合肥新汇成微电子股份有限公司 一种应对真空异常的晶圆切割处理方法
JP7393921B2 (ja) * 2019-11-13 2023-12-07 三井化学東セロ株式会社 部品製造方法
CN115443525A (zh) 2019-12-17 2022-12-06 库力索法荷兰有限公司 用于接收分立部件的胶带
SG10201912782SA (en) * 2019-12-20 2021-07-29 Rokko Systems Pte Ltd Post-processing system and method
JP7644591B2 (ja) * 2020-12-11 2025-03-12 アールエム東セロ株式会社 電子部品の製造方法、電子部品製造装置
KR20220151486A (ko) 2021-05-06 2022-11-15 삼성전자주식회사 파워 무결성 특성을 향상시킬 수 있는 반도체 패키지

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129431A (ja) * 1991-11-05 1993-05-25 Hitachi Ltd 接着テープ
CN1199924A (zh) * 1997-05-15 1998-11-25 日本电气株式会社 芯片型半导体装置的制造方法
JP2001085364A (ja) * 1999-09-14 2001-03-30 Tokin Corp ダイシング方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3399332A (en) * 1965-12-29 1968-08-27 Texas Instruments Inc Heat-dissipating support for semiconductor device
US3512027A (en) * 1967-12-12 1970-05-12 Rca Corp Encapsulated optical semiconductor device
US3842491A (en) * 1972-12-08 1974-10-22 Ibm Manufacture of assorted types of lsi devices on same wafer
US4716124A (en) * 1984-06-04 1987-12-29 General Electric Company Tape automated manufacture of power semiconductor devices
US4635092A (en) * 1984-06-04 1987-01-06 General Electric Company Tape automated manufacture of power semiconductor devices
JPS62249446A (ja) * 1986-04-23 1987-10-30 Hitachi Ltd 保持装置およびその使用方法
JPH0831431B2 (ja) * 1987-11-11 1996-03-27 東京エレクトロン株式会社 検査方法
CH681286A5 (enExample) * 1990-04-23 1993-02-26 Grapha Holding Ag
US5172050A (en) * 1991-02-15 1992-12-15 Motorola, Inc. Micromachined semiconductor probe card
US5487999A (en) * 1991-06-04 1996-01-30 Micron Technology, Inc. Method for fabricating a penetration limited contact having a rough textured surface
US5177439A (en) * 1991-08-30 1993-01-05 U.S. Philips Corporation Probe card for testing unencapsulated semiconductor devices
GB2263195B (en) * 1992-01-08 1996-03-20 Murata Manufacturing Co Component supply method
JP2994510B2 (ja) * 1992-02-10 1999-12-27 ローム株式会社 半導体装置およびその製法
JPH05343517A (ja) 1992-06-10 1993-12-24 Hitachi Ltd ダイソータテープ
US5476566A (en) * 1992-09-02 1995-12-19 Motorola, Inc. Method for thinning a semiconductor wafer
JPH0974076A (ja) * 1995-09-06 1997-03-18 Rohm Co Ltd 発光半導体ウエハの個別分離方法
US6017776A (en) * 1997-04-29 2000-01-25 Micron Technology, Inc. Method of attaching a leadframe to singulated semiconductor dice
US6294439B1 (en) * 1997-07-23 2001-09-25 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US6028436A (en) * 1997-12-02 2000-02-22 Micron Technology, Inc. Method for forming coaxial silicon interconnects
US6093083A (en) * 1998-05-06 2000-07-25 Advanced Imaging, Inc. Row carrier for precision lapping of disk drive heads and for handling of heads during the slider fab operation
JP3341990B2 (ja) 1998-10-27 2002-11-05 株式会社東京精密 被加工材のチャックテーブル
JP4392732B2 (ja) * 2000-02-07 2010-01-06 リンテック株式会社 半導体チップの製造方法
US6664621B2 (en) * 2000-05-08 2003-12-16 Tessera, Inc. Semiconductor chip package with interconnect structure
JP2002075937A (ja) * 2000-08-30 2002-03-15 Nitto Denko Corp 半導体ウエハの加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129431A (ja) * 1991-11-05 1993-05-25 Hitachi Ltd 接着テープ
CN1199924A (zh) * 1997-05-15 1998-11-25 日本电气株式会社 芯片型半导体装置的制造方法
JP2001085364A (ja) * 1999-09-14 2001-03-30 Tokin Corp ダイシング方法

Also Published As

Publication number Publication date
KR20040013001A (ko) 2004-02-11
WO2003075331A1 (fr) 2003-09-12
JP4137471B2 (ja) 2008-08-20
KR100691034B1 (ko) 2007-03-09
CN1533594A (zh) 2004-09-29
EP1484791A4 (en) 2008-03-19
TWI309062B (enExample) 2009-04-21
TW200403736A (en) 2004-03-01
EP1484791A1 (en) 2004-12-08
US8101436B2 (en) 2012-01-24
JP2003258067A (ja) 2003-09-12
US20050003635A1 (en) 2005-01-06

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