200938859 九、發明說明： 【發明所屬之技術領域】 本發明係關於施行有必要在形成於晶圓上後以被切割機 及劃片機等分離後之狀態施行檢查之複數元件（晶片）之電 性檢查之多晶片探針儀’特別係關於施行電晶體及二極體 等之小型且在1片晶圓形成非常多數之晶片之檢查之多晶 片探針儀。 【先前技術】 ❹ 在半導體製程等中，在薄的圓板狀晶圓施以各種處理而 在晶圓形成複數元件（晶片）後，檢查各元件之電氣的特 性，其後以切割機切離後，被固定組裝於導線架等。上述 電氣的特性之檢查係由探針儀與測試器所構成之晶圓測試 系統所施行。探針儀係將晶圓保持於晶圓載置台，使探針 接觸於各元件之電極。測試器係由連接於探針之端子供 應電源及各種試驗信號，以測試器分析輸出至元件之電極 之信號而痛認是否正常執行動作。 © 在元件中，不僅有MPU及大容量記憶體等之高積體度之 元件，也有電晶體及二極體等簡單構成之元件。此種簡單 構成之元件例如為0.2〜〇·5 mm見方之小型元件，但多屬於 . 高耐壓•高輸出之功率元件，在形成於晶圓之狀態下，不 能施行正確之檢查，需要利用切割機及劃片機等將晶圓切 斷而分離成個別之晶片之狀態施行檢查。 為施行正確之檢查，LED也有必要在分離成個別之晶片 之狀態施行檢查，有必要使針接觸於晶片之電極而使其執 129742.doc 200938859 行動作’與當時之電氣特性同時檢查輸出光之特性。以 下，以LED為例進行說明，但本發明之多晶片探針儀並非 限定於LED ’可使用於有必要以分離成個別之晶片之狀態 施行檢查之晶片之檢查。 如上所述’ LED晶片例如係〇 3 mm見方之微小晶片，可 • 在直徑約50 mm之晶圓上形成數萬個。晶片係以非常高精 ' 度之間距形成於晶圓，故在分離前，可使用通常之晶圓探 針儀，使多數組之針接觸於多數晶片之電極，而以分時使 ❸ 其逐次執行動作，藉以有效地檢查多數晶片。 晶片由晶圓之分離如圖1A至圖1C所示，係將晶圓13貼 附在貼附於有孔之平板狀之架11之背面之黏著帶丨2，利用 切割機在晶圓13形成溝後，利用劃片機等將晶圓切斷而分 離成個別之晶片14所執行。各晶片14雖被分離，而仍被貼 附在黏著帶1 2，但其位置會變化而已不再呈現正規排列之 狀態。 圖2係說明此分離後之晶片14之排列狀態之例之圖。各 © 晶片14之位置及方向有移位。參照號碼15係表示晶片之電 極。施行檢查之情形，使針接觸於電極15而通電，藉以使 - 晶片14執行動作。 . 如圖2所示’分離後之晶片14之排列位置有移位，電極 1 5之排列位置也有移位，故使用具有配置於特定位置之多 數針之以往之探針儀時，不能正確地使針接觸於電極，不 能以分時使多數晶片逐次執行動作而加以檢查。因此，以 往’會在對電阻、電晶體及二極體等逐一檢查而依各特性 129742.doc 200938859 分離之所謂晶片邏扭 β選擇器之裝置上設置光檢測器而施行檢 隻0 專利文獻1 :日太枯 口承特開平1 1-1 83523號公報 【發明内容】 (發明所欲解決之問題） 但，晶片選擇恶役收n , θ H 糸將曰曰片逐一地保持於檢查載台而使針 接觸於晶片之雷搞 ，文有檢查1個晶片所需之時間較長之 ❿ ❹ ° 。—所需之時間中，使晶片執行動作而檢查其電氣 特性及光特性所需之時、、 h雷搞0 Ί較短认置曰曰片而使針接觸於晶 片之電極所需之時間佔較大之比率。 檢查時間變長日卑，甘4 其相對部分地，生產性會降低而成為 烕本增加之原因。 為縮短檢查時間，雖古 有人考慮施仃抽查方式，但在高品 質之LED中’全數拾杏古甘 —有其必須，且最好能降低檢查所需 之時間引起之成本。。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The multi-wafer prober of the inspection is in particular a multi-wafer prober for performing inspection of a small transistor such as a transistor or a diode and forming a very large number of wafers on one wafer. [Prior Art] In a semiconductor process or the like, after performing various processes on a thin disk-shaped wafer and forming a plurality of elements (wafers) on a wafer, the electrical characteristics of each element are inspected, and then cut off by a cutter. After that, it is fixedly assembled to a lead frame or the like. The inspection of the above electrical characteristics is performed by a wafer test system consisting of a prober and a tester. The probe device holds the wafer on the wafer stage so that the probe contacts the electrodes of each component. The tester supplies power and various test signals from terminals connected to the probe, and the tester analyzes the signal output to the electrodes of the component to determine whether the operation is performed normally. © In the components, there are not only components with high integration of MPU and large-capacity memory, but also simple components such as transistors and diodes. Such a simple component is, for example, a small component of 0.2 to 〇·5 mm square, but many of them are high-voltage and high-output power components, and in the state of being formed on a wafer, the correct inspection cannot be performed, and it is necessary to utilize The cutter and the dicing machine perform inspection by cutting the wafer and separating it into individual wafers. In order to perform the correct inspection, it is also necessary for the LED to be inspected in a state of being separated into individual wafers. It is necessary to make the needle contact the electrode of the wafer and perform the operation of the 129742.doc 200938859. characteristic. Hereinafter, the LED will be described as an example, but the multi-wafer prober of the present invention is not limited to the LED ‘can be used for inspection of a wafer which is required to be inspected in a state of being separated into individual wafers. As described above, an 'LED wafer, for example, a tiny wafer of 3 mm square, can form tens of thousands on a wafer having a diameter of about 50 mm. The wafers are formed on the wafer at a very high degree of precision. Therefore, before the separation, a conventional wafer prober can be used to make the pins of the multi-array contact the electrodes of most of the wafers, and the time-sharing is repeated. Perform actions to effectively check most wafers. The wafer is separated from the wafer as shown in FIG. 1A to FIG. 1C, and the wafer 13 is attached to the adhesive tape 2 attached to the back surface of the flat plate 11 having the hole, and is formed on the wafer 13 by a cutter. After the ditch, the wafer is cut by a dicing machine or the like and separated into individual wafers 14. Although the wafers 14 are separated, they are still attached to the adhesive tape 12, but their positions are changed to no longer assume a regular alignment state. Fig. 2 is a view showing an example of the arrangement state of the wafer 14 after the separation. The position and orientation of each of the © wafers 14 is shifted. Reference numeral 15 denotes an electrode of the wafer. In the case of inspection, the needle is brought into contact with the electrode 15 to be energized, whereby the wafer 14 performs an action. As shown in Fig. 2, the position of the wafer 14 after the separation is shifted, and the arrangement position of the electrodes 15 is also shifted. Therefore, when a conventional probe having a plurality of needles disposed at a specific position is used, the alignment cannot be performed correctly. The needle is brought into contact with the electrode, and it is not possible to check the operation of the majority of the wafers in a time-sharing manner. Therefore, in the past, a photodetector was set up on a device that checks a resistor, a transistor, a diode, and the like one by one, and the so-called wafer logic twisted β selector, which is separated according to each characteristic 129742.doc 200938859, was performed. Japanese Patent Application Laid-Open No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. Hei No. 1-1 83523. The contact between the needle and the wafer is long, and the time required to inspect one wafer is longer. - the time required for the wafer to perform its operation to check its electrical and optical characteristics, and the time required to make the needle contact the electrode of the wafer. Larger ratio. The inspection time has become longer and worse, and Gan 4 is relatively partly, and productivity is reduced, which is the reason for the increase in capital. In order to shorten the inspection time, although some people have considered the method of spot inspection, it is necessary to pick up the whole apricot in the high-quality LED, and it is better to reduce the cost caused by the time required for inspection.
本發明係以解決此種問顳A 门題為㈣’並以可有效檢查有必 要刀離施行檢查之晶片之多 夕日曰片探針儀之實現為目的。 為實現上述目的，本發明皮 月之多日日片探針儀可分別調整同 時接觸於複數晶片之電極之褶螌夕私*y $ 複數之針之位置，縱使分離而 使日曰片及電極之位置有移位 ύ 也可藉針位置調整機構配合 移位後之電極之位置而調整各 ,Α ^ 谷針之位置，藉以使針正確地 接觸於複數晶片之電極。 即，本發明之多晶片探針儀 俄之特徵在於包含：載台，其 係保持分離後之複數晶片；斜 貝’其係具有同時接觸於2 129742.doc 200938859 個以上特定數前述晶片之電極之複數針；電極位置檢測機 構，其係檢測保持於前述載台之前述複數晶片之電極位 置；及複數針位置調整機構，其係調整各針之位置；藉前 述複數針位置調整機構，以對應於所檢測出之前述複數晶 4之電極位置之方式，調整前述複數針之位置，而使前述 複數針同時接觸於前述複數晶片之電極。 電極位置檢測機構可照樣使用以往設於探針儀之對準機 冑之硬體’而具有以圖像處理板辨識晶片及電極，檢測電 ❹ #之位置’更在必要時檢測連結2個電極之（假想）線之傾斜 角0之軟體。 各針位置調整機構係使對應之針至少向平行於載台表面 之平面内之2轴方向移動。垂直於載台表面之方向之晶片 之電極位置之移位較小，且針具有彈性此方向之電極位 置之移位小時，即可正確地使其接觸，故一般無必要使針 向垂直於載台表面之方向移動，但在需要正確之接觸麼之 形等，各針位置調整機構係構成使對應之針向垂直於載 。表©之方向移動。藉此’可使所有之針之關係位置與分 離後之晶片之電極之關係位置一致。 又’各晶片雖因分離而使位置及方向移位，但各晶片内 ^極之_位置不會發生變化。因此，可構成包含複數 =，位置調整機構，其係使接觸於各晶片之複數電極之 複數曰日片組-姜交· a U rr » 移動，a曰片別位置調整機構包含：旋轉機 :，其係使對應之針組至少在平行於載台表面之平面内旋 轉，及平行移動機構，其係使對應之針組移動。藉此，可 129742.doc 200938859 使所有之針之關係位置與分離後之晶片之電極之關係位置 一致，且與上述依照各針設置針位置調整機構之構成相 比’可將移動軸減少1轴。 為了施行複數晶片對載台上之搬送等，與以往之探針儀 同樣地，最好包含3維移動機構，其係使載台與針頭之相 • 對位置變化。 使用此3維移動機構之情形，在複數晶片之位置未移位 之情形，也可藉3維移動機構使電極移動至接觸於針之位 © 置，使各針配合對應之電極之位置移位而移動，但藉3維 移動機構施行移動而使與〗個基準電極對應之基準針之位 置一致，並利用各針位置調整機構使基準電極與基準針以 外之其他電極與針之關係位置一致。藉此，無必要在基準 針設置針位置調整機構。 又，在設置上述之晶片別位置調整機構之構成中設置3 維移動機構之情形也相同，在複數晶片之位置未移位之情 形’也可藉3維移動機構使電極移動至接觸於針之位置， ® 使各針配合對應之電極之位置移位而移動，但藉3維移動 機構施行移動而使與1個基準電極對應之基準針之位置一 致，並利用各晶片別位置調整機構使具有基準電極之晶片 . 以外之其他晶片之電極與針之關係位置一致。又，在藉旋 轉機構使旋轉成分相符時，可使具有基準電極之晶片之基 準電極以外之電極與對應之針之關係位置一致，故具有基 準電極之晶片之晶片別位置調整機構不再需要設置平行移 動機構。 129742.doc 200938859 如圖1A至圖1C所不，複數晶片也可以被貼附在貼附於 架之黏著帶之狀態保持於載台上。此情形，載台係保持成 黏著帶之面接觸。所保持之黏著帶及晶片之位置未變化， 故電極位置檢測機構檢測貼附在黏著帶之所有複數晶片之 電極位置。針頭具有同時接觸於貼附在黏著帶之複數晶片 中之特定數，例如4個晶片之電極之複數針。此特定數愈 多愈好，但相對地，有必要增加針數及針位置調整機構之 個數’探針儀會大型化而成本增加。 ® 複數針同時接觸之特定數晶片可為鄰接排列之晶片，但 也可為排列之晶片中以特定之晶片間隔所選擇之晶片。藉 此，可擴大設置針位置調整機構之空間。此情形，在針所 接觸之晶片檢查完成時，以針接觸於中間晶片之方式逐次 移動而施行檢查。 又’也可不使用圖1Α至圖1C所示之架及黏著帶，而使 載台獨立地保持複數晶片。 晶片係ίΕΕ)等發光元件之情形，包含檢測發光元件輸出 之光特性之光檢測器，以分時逐次使複數針同時接觸之複 數晶片動作而使其發光，以分時逐次檢測光檢測器之輸 出。 • 此情形’也可包含光檢測器位置調整機構’其係配合使 動作之晶片位置，而調整光檢測器之位置。 依據本發明，可同時使針接觸於複數晶片之電極，故可 縮短檢查時間而降低成本。 【實施方式】 129742.doc 200938859 圖3係表示本發明之第丨實施例之多晶片探針儀之全體構 成之圖。如圖3所示，第丨實施例之多晶片探針儀係包含基 台21、設於基台21之移動空間22、在移動空間22上向X軸 方向（垂直於圖之方向）移動之X移動台23、在又移動台23上 向Y轴方向（圖之水平方向）移動之γ移動台24、設於Y移動 . 台24之2軸移動（圖之上下方向）· 0旋轉機構25、支持於z ' 軸移動· 0旋轉機構25之載台26、支柱27、上板28、對準 顯微鏡29、針頭31、及光檢測單元4〇。又，雖未圖示，但 © 具有由電腦所構成，施行全體之控制之控制部。藉上述之 機構，使載台26可在χ，γ，Ζ軸之3軸方向、與垂直於z軸之 面内旋轉。在載台26上，載置並固定有由圖1A至圖⑴所 不之架11、黏著帶12、及晶圓13之分離後之晶片14所構成 之被檢查物20。檢測分離後之晶片14之電極之位置時使 載台26在對準顯微鏡29下移動，掃描全部晶片而藉圖像處 理檢測電極之位置而加以記憶。不含針頭3 i與光檢測單元 4〇之構成係與以往之晶圓探針儀相同之構成，在此省略進 ❿ 一步之說明。 圖4A及圖4B係表示針頭31與光檢測單元4〇之部分之構 成之圖，圖4A係側面圖，圖沾係上面圖。光檢測單元4〇 配置於檢查之晶片之正上方，具有檢測晶片（在此為[岡 所輸出之光量之光功率計41、光功率計41之支持部“、移 動支持部42之光功率計移動機構43、末端延伸至檢查之晶 片附近之光纖44、保持光纖44而令繼至檢測入射於光纖44 之光波長用之單色儀（未圖示）之中繼單元45、支持令繼單 129742.doc • 11 · 200938859 元45之支持部46、及移動支持部46之纖維移動機構#?。如 圖4B所示，光檢測單元40具有收容纖維移動機構叼之部分 由圓形部突出之形狀。光功率計移動機構43與纖維移動機 構47可利用習知之移動機構實現，最好為使用如壓電元件 般可施行高速動作之元件之移動機構。但，也可使用組合 驅動螺絲ϋ馬達之移動機才冓。光功率言十#動機構43與纖維 移動機構47如後所述，在檢查相異之晶片時無移動必要之 情形，無設置之必要。 針頭31具有配置於光檢測單元40之周圍之形狀，具有i 個針單元36A、與7個針位置調整機構36B_36h。針單元 36A係將基準針33A固定於針頭31之單元。針位置調整機 構36E具有針33E、保持針33E之針保持單元34E、安裝有 針保持單元34E之移動單元35E、及使移動單元35E移動之 移動機構36E。移動機構36E可使針33E向平行於載台26之 載置面之面内之2轴方向，例如X軸方向與γ軸方向移動。 針位置調整機構也可利用習知之移動機構實現，最好為使 用如壓電元件般可施行高速動作之元件之移動機構。但， 也可使用組合驅動螺絲與馬達之移動機構。 其他之針位置調整機構366〜36〇,3617〜3611也具有同樣之 構成。如圖所示’此種7個針位置調整機構36b_36P係在光 檢測單元40之周圍配置成放射狀。針單元36A不具有位置 調整機構，故可縮小配置用之空間，例如被配置在光檢測 單元40之突出部與針位置調整機構36B之間。 垂直於載台26之载置面之方向之晶片之電極位置之移位 129742.doc 200938859 較小’且針具有彈性，此方向之電極位置之移位小時，即 可正確地使其接觸，故針位置調整機構不使針向垂直於載 台表面之方向移動，但在需要正確之接觸壓之情形等，各 針位置調整機構也可構成使對應之針向垂直於載台表面之 方向移動。 藉以上之構成，可使所有之針之關係位置與分離後之晶 • 片之電極之關係位置一致。 圖5A及圖5B係表示同時接觸針之晶片14之配置之圖， © 圖5八係表示使針同時接觸鄰接配置成1行之4個晶片14之電 極1 5之例，圖5B係表示使針同時接觸鄰接配置成2行2列之 4個晶片14之電極15之例。在圖5A及圖5B中，參照符號R 係表示圖4B所示之針33A接觸之基準電極。同時接觸針之 晶片14組在此稱為測定單位。 圖6係表示第1實施例之檢査動作之流程圖。 在步驟101中，將黏著帶上貼附有如圖1A至圖1C所示之 被分割後之晶片之架搬送而保持於載台26上。在此狀態 ❹下’ a曰曰片之位置無變化。 在步驟102中，利用含對準顯微鏡29等之對準機構檢測 所有晶片之電極而加以記憶。 在步驟103中，依照各測定單位，算出基準電極與其他 電極之關係位置。此關係位置係以無電極之移位時為機準 而算出作為由該處之移&。此處理係由纟圖示之控制部所 執行。 在步驟104中’針位置調整機構账遍分別依據在步驟 129742.doc -13- 200938859 10 3中算出之關係位置使敎單位之基準針以外之針位置 移動。藉此，8根針呈現對應於4個晶片之8個電極之位置 之關係位置。 在步驟1G5中’移動载台26，以便使基準電極接觸於基 準針。此時，基準電極移動而位於基準針之正下方後，使 載台上升（向Ζ軸方向移動）使電極移動而接觸於針。 在步驟1〇6中，在測定單位内之4個晶片中，配合欲檢查 之晶片位置而移動光功率計41與光纖44之位置。又，測定 Ϊ 單位内之晶片位置之差小而不影響光功率計41與光纖44之 檢測值之情形，無必要執行此步驟106，且無必要設置光 功率計移動機構43與纖維移動機構47。 在步驟107中，由針施加電氣信號，以施行電氣特性及 光特性之檢查。 在步驟108中，判定測定單位内之全部晶片之檢查是否 結束，未結束時，返回步驟106 ,重複執行步驟1〇6至 》 ，直到測定單位内之全部晶片之檢查結束為止。因 此，無必要執行步驟106時，以分時逐次使測定單位内之 全部晶片執行動作而施行檢查。 在步驟109中，判定載台上之全部晶片之檢查是否結 束，未結束時，返回步驟104，重複執行步驟1〇4至1〇9， 直到載台上之全部晶片之檢查結束為止。 總之，在上述動作中，只要以使探針接觸於電極之！次 動作，即可施行4個晶片之檢查，故可提高測定效率。 在第1實施例中，未設置對應於基準電極之基準探針之 I29742.doc 14 200938859 探針移動機構而移動載台’以便使基準電極接觸於基準探SUMMARY OF THE INVENTION The present invention is directed to solving such a problem of "fourth" and for the realization of a multi-day cymbal prober which can effectively inspect a wafer having a necessary knife to be inspected. In order to achieve the above object, the multi-day solar probe device of the present invention can respectively adjust the position of the pleats of the electrodes which are simultaneously contacted with the electrodes of the plurality of wafers, and the separation of the needles and the electrodes. The position is shifted. The position of the electrode can be adjusted by the position adjustment mechanism of the needle, so that the needle is properly contacted with the electrodes of the plurality of wafers. That is, the multi-wafer probe apparatus of the present invention is characterized in that it comprises: a stage which holds a plurality of separated wafers; and an oblique electrode which has electrodes which simultaneously contact the above-mentioned wafers of 2,129,742.doc a plurality of needles; an electrode position detecting mechanism for detecting an electrode position of the plurality of wafers held by the stage; and a plurality of needle position adjusting mechanisms for adjusting positions of the needles; and the plurality of needle position adjusting mechanisms for corresponding The position of the plurality of pins is adjusted in such a manner as to detect the position of the electrode of the plurality of crystals 4, and the plurality of pins are simultaneously contacted with the electrodes of the plurality of wafers. The electrode position detecting mechanism can also use the hardware of the alignment machine previously provided in the probe device to have the image processing board recognize the wafer and the electrode, and detect the position of the electric ❹ #, and if necessary, detect and connect the two electrodes. The (imaginary) line has a soft angle of 0. Each of the needle position adjusting mechanisms moves the corresponding needle in at least two axial directions in a plane parallel to the surface of the stage. The displacement of the electrode position of the wafer perpendicular to the direction of the surface of the stage is small, and the position of the electrode having the elasticity in this direction is small, so that it can be properly contacted, so it is generally unnecessary to make the needle perpendicular to the load. The direction of the surface of the table moves, but in the form of a correct contact, the needle position adjustment mechanism is configured such that the corresponding needle direction is perpendicular to the load. Move in the direction of Table ©. By this, the relationship between the positions of all the needles and the positions of the electrodes of the separated wafers can be made uniform. Further, the respective wafers are displaced in position and direction by separation, but the position of the TM in each wafer does not change. Therefore, a plurality of position adjustment mechanisms can be constructed, which are a plurality of 曰 组 - 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜 姜And causing the corresponding needle set to rotate at least in a plane parallel to the surface of the stage, and a parallel moving mechanism that moves the corresponding needle set. Therefore, 129742.doc 200938859 can make all the relationship positions of the needles coincide with the positions of the electrodes of the separated wafers, and can reduce the moving axis by one axis compared with the above-described configuration of the needle position adjusting mechanism according to each needle. . In order to carry out the transfer of the plurality of wafers onto the stage, it is preferable to include a three-dimensional moving mechanism for changing the position of the stage and the needle in the same manner as the conventional probe. In the case of using the three-dimensional moving mechanism, in the case where the position of the plurality of wafers is not displaced, the three-dimensional moving mechanism can also be used to move the electrodes to contact with the needles, so that the positions of the respective pins are matched with the corresponding electrodes. On the other hand, when moving, the position of the reference pin corresponding to each of the reference electrodes is matched by the movement of the three-dimensional moving mechanism, and the positions of the reference electrodes and the electrodes other than the reference pin are aligned with each other by the respective needle position adjusting mechanisms. Therefore, it is not necessary to set the needle position adjustment mechanism in the reference needle. Further, in the case where the three-dimensional moving mechanism is provided in the configuration of the above-described wafer position adjusting mechanism, the case where the position of the plurality of wafers is not displaced can also be moved to the contact with the needle by the three-dimensional moving mechanism. Position, ® moves the position of each pin in accordance with the position of the corresponding electrode, but moves the position of the reference pin corresponding to one reference electrode by the movement of the three-dimensional moving mechanism, and uses the position adjustment mechanism of each wafer to have The electrode of the reference electrode has the same position as the electrode of the other wafer. Further, when the rotation component is matched by the rotation mechanism, the position of the electrode other than the reference electrode of the wafer having the reference electrode can be made to match the position of the corresponding needle, so that the wafer position adjustment mechanism of the wafer having the reference electrode does not need to be set. Parallel moving mechanism. 129742.doc 200938859 As shown in Figs. 1A to 1C, a plurality of wafers may be attached to the stage while being attached to the adhesive tape attached to the frame. In this case, the stage is held in contact with the surface of the adhesive tape. Since the position of the adhesive tape and the wafer to be held is not changed, the electrode position detecting mechanism detects the position of the electrode attached to all of the plurality of wafers of the adhesive tape. The needle has a plurality of needles that simultaneously contact a particular number of wafers attached to the adhesive tape, such as the electrodes of four wafers. The more the specific number, the better, but in contrast, it is necessary to increase the number of needles and the number of needle position adjustment mechanisms. The prober is enlarged and the cost is increased. The specific number of wafers that the multiple needles are in contact with at the same time may be adjacently arranged wafers, but may also be wafers selected at a particular wafer spacing in the aligned wafers. Thereby, the space for setting the needle position adjusting mechanism can be expanded. In this case, when the inspection of the wafer in contact with the needle is completed, the inspection is performed by successively moving the needle in contact with the intermediate wafer. Further, the holder and the adhesive tape shown in Figs. 1A to 1C may be omitted, and the stage may independently hold the plurality of wafers. In the case of a light-emitting element such as a wafer system, a photodetector for detecting the light characteristic of the output of the light-emitting element is provided, and the plurality of wafers simultaneously contacted by the plurality of needles are sequentially operated in a time-division manner to emit light, and the photodetector is sequentially detected in a time-sharing manner. Output. • This case 'may also include a photodetector position adjustment mechanism' that matches the position of the wafer for the action and adjusts the position of the photodetector. According to the present invention, the needle can be brought into contact with the electrodes of the plurality of wafers at the same time, so that the inspection time can be shortened and the cost can be reduced. [Embodiment] 129742.doc 200938859 Fig. 3 is a view showing the overall configuration of a multi-wafer probe apparatus according to a third embodiment of the present invention. As shown in FIG. 3, the multi-wafer probe apparatus of the second embodiment includes a base 21, a moving space 22 provided on the base 21, and a moving direction on the moving space 22 in the X-axis direction (perpendicular to the direction of the figure). The X moving table 23, the γ moving table 24 moving in the Y-axis direction (horizontal direction) on the moving table 23, and the Y-axis moving in the Y moving station 24 (upward and downward directions in the figure) · 0 rotating mechanism 25 The stage 26, the support 27, the upper plate 28, the alignment microscope 29, the needle 31, and the photodetecting unit 4 are supported by the z' axis movement/zero rotation mechanism 25. Further, although not shown, the control unit has a control unit that is constituted by a computer and performs overall control. With the above mechanism, the stage 26 can be rotated in the three-axis direction of the χ, γ, and Ζ axes and in the plane perpendicular to the z-axis. On the stage 26, an object to be inspected 20 composed of the rack 11, the adhesive tape 12, and the wafer 14 separated by the wafer 13 shown in Figs. 1A to 1(1) is placed and fixed. When the position of the electrode of the separated wafer 14 is detected, the stage 26 is moved under the alignment microscope 29, and all the wafers are scanned and the position of the detection electrode is processed by the image to be memorized. The configuration in which the needle 3 i and the photodetecting unit 4 are not included is the same as that of the conventional wafer prober, and the description thereof will be omitted. 4A and 4B are views showing a configuration of a portion of the needle 31 and the photodetecting unit 4A, and Fig. 4A is a side view showing the upper view. The photodetecting unit 4 is disposed directly above the wafer to be inspected, and has a detecting wafer (herein, the optical power meter 41 of the optical output, the supporting portion of the optical power meter 41, and the optical power meter of the mobile supporting unit 42). The moving mechanism 43 extends to the optical fiber 44 near the wafer to be inspected, and the relay unit 45 for holding the optical fiber 44 to the monochromator (not shown) for detecting the wavelength of light incident on the optical fiber 44, and the support order 129742.doc • 11 · 200938859 The support portion 46 of the unit 45 and the fiber moving mechanism #? of the movement support unit 46. As shown in Fig. 4B, the light detecting unit 40 has a portion in which the fiber moving mechanism is housed and protruded from the circular portion. The optical power meter moving mechanism 43 and the fiber moving mechanism 47 can be realized by a conventional moving mechanism, and it is preferably a moving mechanism using an element capable of performing high-speed operation like a piezoelectric element. However, a combined driving screw motor can also be used. The moving machine is only required. As will be described later, there is no need to move when inspecting the different wafers, and there is no need for setting. The needle 31 has a configuration. The shape around the light detecting unit 40 includes i needle units 36A and seven needle position adjusting mechanisms 36B_36h. The needle unit 36A is a unit for fixing the reference needle 33A to the needle 31. The needle position adjusting mechanism 36E has a needle 33E, The needle holding unit 34E holding the needle 33E, the moving unit 35E to which the needle holding unit 34E is attached, and the moving mechanism 36E for moving the moving unit 35E. The moving mechanism 36E can bring the needle 33E to the side parallel to the mounting surface of the stage 26. The inner two-axis direction, for example, the X-axis direction and the γ-axis direction. The needle position adjustment mechanism can also be realized by a conventional moving mechanism, and it is preferable to use a moving mechanism that can perform a high-speed operation such as a piezoelectric element. It is also possible to use a combination of the drive screw and the moving mechanism of the motor. The other needle position adjusting mechanisms 366 to 36A, 3617 to 3611 have the same configuration. As shown in the figure, the seven needle position adjusting mechanisms 36b_36P are used for light detection. The circumference of the unit 40 is arranged in a radial shape. The needle unit 36A does not have a position adjustment mechanism, so that the space for arrangement can be reduced, for example, the projection portion and the needle position of the light detecting unit 40. Between the whole mechanism 36B. The displacement of the electrode position of the wafer perpendicular to the mounting surface of the stage 26 is 129742.doc 200938859 Smaller and the needle has elasticity, and the displacement of the electrode position in this direction is small, which is correct The ground contact is made so that the needle position adjusting mechanism does not move the needle in a direction perpendicular to the surface of the stage, but in the case where a correct contact pressure is required, the needle position adjusting mechanism can also be configured such that the corresponding needle direction is perpendicular to the load. The direction of the surface of the table is shifted. With the above configuration, the relationship between the positions of all the pins and the positions of the electrodes of the separated crystal chips can be made uniform. Fig. 5A and Fig. 5B are diagrams showing the arrangement of the wafer 14 for simultaneously contacting the needles. Fig. 5 shows an example in which the needle is simultaneously brought into contact with the electrode 15 adjacent to the four wafers 14 arranged in one row, and Fig. 5B shows the electrode which simultaneously contacts the four wafers 14 arranged adjacent to two rows and two columns. 15 examples. In FIGS. 5A and 5B, reference symbol R denotes a reference electrode in contact with the needle 33A shown in FIG. 4B. The set of wafers 14 that simultaneously contact the needles is referred to herein as the unit of measurement. Fig. 6 is a flow chart showing the inspection operation of the first embodiment. In step 101, the frame on which the divided wafers as shown in Figs. 1A to 1C are attached is attached to the adhesive tape and held on the stage 26. In this state, there is no change in the position of the ’ 曰曰 。. In step 102, the electrodes of all the wafers are detected by an alignment mechanism including an alignment microscope 29 or the like for memorization. In step 103, the relationship between the reference electrode and the other electrodes is calculated in accordance with each measurement unit. This relationship position is calculated as a shift from the position when the electrode is not displaced. This processing is performed by the control unit shown in the figure. In step 104, the needle position adjustment mechanism moves the needle position other than the reference needle of the unit in accordance with the relationship position calculated in steps 129742.doc -13 - 200938859 10 3 , respectively. Thereby, the eight needles present the relationship position corresponding to the positions of the eight electrodes of the four wafers. The stage 26 is moved in step 1G5 to bring the reference electrode into contact with the reference pin. At this time, after the reference electrode moves and is positioned directly below the reference pin, the stage is raised (moved in the z-axis direction) to move the electrode to contact the needle. In step 1〇6, the positions of the optical power meter 41 and the optical fiber 44 are moved in the four wafers in the measurement unit in accordance with the position of the wafer to be inspected. Further, it is not necessary to perform this step 106, and it is not necessary to provide the optical power meter moving mechanism 43 and the fiber moving mechanism 47, since it is determined that the difference in wafer position within the unit of Ϊ is small without affecting the detected values of the optical power meter 41 and the optical fiber 44. . In step 107, an electrical signal is applied from the needle to perform an inspection of electrical and optical characteristics. In step 108, it is determined whether or not the inspection of all the wafers in the measurement unit is completed. If not, the process returns to step 106, and steps 1〇6 to ” are repeated until the inspection of all the wafers in the measurement unit is completed. Therefore, when it is not necessary to execute step 106, the inspection is performed by performing operations on all the wafers in the measurement unit in time division. In step 109, it is determined whether or not the inspection of all the wafers on the stage has been completed. If not, the process returns to step 104, and steps 1〇4 to 1〇9 are repeatedly executed until the inspection of all the wafers on the stage is completed. In short, in the above action, as long as the probe is in contact with the electrode! With the second operation, inspection of four wafers can be performed, so that the measurement efficiency can be improved. In the first embodiment, the probe moving mechanism is moved without setting the reference probe corresponding to the reference electrode, and the reference electrode is brought into contact with the reference probe.
針’即’利用移動空間22、X移動台23、Y移動台24、及Z 軸移動· Θ旋轉機構25所構成之3維移動機構使載台移動 而實現基準電極對基準探針之接觸，但例如也可在基準探 針設置探針移動機構使其移動，利用3維移動機構使載台 . 之移動可移動至無晶片之位置移位之情形之標準位置，依 據由各電極之標準位置之位置偏移，控制各探針移動機構 之移動量。 © 又’在第1實施例中’如圖5 A及圖5B所示，雖施行鄰接 配置之4個晶片之檢查，但如圖7A及圖7B所示，也可使針 同時接觸於排列之晶片14中以特定之晶片間隔所選擇之晶 片14S之電極。圖7A係對應於圖5A，表示選擇以1個間距 使針接觸於配置成1行之晶片丨4中之4個之晶片j4S之例。 圖7B係對應於圖5B，表示選擇以i個間距使針接觸於配置 成4列4行之晶片14中在各方向之2個之晶片14S之例。如圖 7A及圖7B所示，藉由選擇使針接觸之晶片，可擴大設置 © 針位置調整機構之空間。又，在圖7A及圖7B之情形，針 接觸之晶片之檢查結束時，以使針接觸於檢查畢之晶片之 間之晶片方式逐次移動而施行檢查。 接觸於曰曰片14之電極之針μ如圖8A所示，也有1根之情 形，但在有必要通上大電流之情形等，也可如圖8B所示’ 使複數根針33接觸於電極15。 在第1實施例中，在基準針以外之各針設置移動機構， 可獨立地移動各針之位置。但，各晶片之2個電極之關係 129742.doc -15- 200938859 位置（間隔）係依據曝光裝置曝光之高精度之圖案加以決 定’故保持-定。在第2實施例中，利用此特性而簡化針 移動機構之構成。 圖9係說明本發明之第2實施例之多晶片探針儀之定位原 理之圖。假設晶片14隨著旋轉0而由未移位之晶片Μ，之位 置如圖所示發生移位。對應於此移位，電極㈣發生移 位’假設-方電極以向量p由無移位時之中心位置移位 至中心位置ci。使由無移位之狀態之晶片14，旋轉θ而使 方電極之中〜位置以向量P移位時，會重疊於晶片14。 即，維持接觸於2個電極15之2根針之相互位置不變旋轉0 而以向量P平行移動時，可使2根針接觸於移位後之電極。The needle 'is' uses a three-dimensional moving mechanism composed of the moving space 22, the X moving table 23, the Y moving table 24, and the Z-axis moving/turning mechanism 25 to move the stage to achieve contact between the reference electrode and the reference probe. For example, the probe moving mechanism can be set to move in the reference probe, and the movement of the stage can be moved to the standard position of the position where the wafer is not displaced by the 3-dimensional moving mechanism, according to the standard position of each electrode. The positional offset controls the amount of movement of each of the probe moving mechanisms. © In the first embodiment, as shown in FIG. 5A and FIG. 5B, although inspection of four wafers arranged adjacently is performed, as shown in FIGS. 7A and 7B, the needles may be simultaneously contacted with the array. The wafer 14 is selected from the electrodes of the wafer 14S at a particular wafer spacing. Fig. 7A corresponds to Fig. 5A and shows an example in which the wafer j4S which is selected to be in contact with one of the wafer cassettes 4 arranged in one line at one pitch is selected. Fig. 7B corresponds to Fig. 5B and shows an example in which the needles are brought into contact with two wafers 14S in each direction in the wafers 14 arranged in four rows and four rows at i pitches. As shown in Figs. 7A and 7B, by selecting the wafer that contacts the needle, the space for the © needle position adjustment mechanism can be enlarged. Further, in the case of Figs. 7A and 7B, when the inspection of the wafer in contact with the needle is completed, the inspection is performed by sequentially moving the needle to the wafer between the wafers which have been inspected. The needle μ contacting the electrode of the cymbal 14 is as shown in FIG. 8A, but there is also one case. However, if it is necessary to apply a large current, etc., as shown in FIG. 8B, the plurality of needles 33 may be contacted. Electrode 15. In the first embodiment, the movement mechanism is provided for each of the needles other than the reference needle, and the position of each needle can be independently moved. However, the relationship between the two electrodes of each wafer 129742.doc -15- 200938859 The position (interval) is determined according to the high-precision pattern of exposure of the exposure device. In the second embodiment, the configuration of the needle moving mechanism is simplified by utilizing this characteristic. Fig. 9 is a view showing the principle of positioning of the multi-wafer prober of the second embodiment of the present invention. It is assumed that the wafer 14 is displaced by the undisplaced wafer as it rotates by 0, and the position is shifted as shown. In response to this shift, the electrode (4) is shifted. The hypothetical-square electrode is shifted by the vector p from the center position when there is no shift to the center position ci. When the wafer 14 in the state of no shift is rotated by θ and the position of the square electrode is shifted by the vector P, it is superimposed on the wafer 14. That is, when the two needles that are in contact with the two electrodes 15 are kept rotated by 0 and the vector P is moved in parallel, the two needles can be brought into contact with the displaced electrode.
在圖9中，彳藉旋_與2軸之平行移動之合計3轴之移 動使針接觸於移位後之2個電極。對此，在第i實施例中， 對2個電極’分別需要2軸之移動，合計需要*軸之移動。 換言之，在圖9之移動中，可減少丨轴份之移動。 圖1〇係說明實現圖9之移動之晶片別位置調整機構之概 略構成之圖。晶片別位置調整機構如圖1〇所示，2根針ΜΑ 與33B係以末端間之距離對應於！晶片之2個電極間之距離 方式被固定於旋轉台51。旋轉台51係可對又轴移動台⑽ 轉地被支持著。X轴移動台52係可對γ軸移動㈣向乂轴方 向移動地被支持著。γ軸移動台53係可對基台轴方 向移動地被支持著。圖1()之晶片別位置調整機構可利用習 知之移動機構實現，最好為使用如壓電元件般可施行高速 動作之元件之移動機構。 I29742.doc 16 200938859 又，在第2實施例中，也可利用 似… 用移動台26之3維移動機構 對1個日曰片施行對應於圖9之向量ρ _ 里干仃移動，故1個之晶 片別位置調整機構只樣能旋轉即可。 在第1實施例中，係以分離後之曰 便夂日曰片被貼附於貼附有架 之黏著帶之型態被保持於載台上 秕口上但如圖11所示，也可在 載台26設置複數個真空吸附機構之吸氣口而同時固定複數 晶片Μ。此情形也難以精密地設定複數晶片14之位置及旋 轉’故設置使接觸於複數晶片14之電極之針之位置移動之 ΟIn Fig. 9, the movement of the three axes by the total of the parallel movement of the rotation and the two axes causes the needle to contact the two electrodes after the displacement. On the other hand, in the i-th embodiment, the movement of the two axes is required for each of the two electrodes, and the movement of the * axis is required in total. In other words, in the movement of Fig. 9, the movement of the fulcrum portion can be reduced. Fig. 1 is a view showing a schematic configuration of a wafer position adjusting mechanism for realizing the movement of Fig. 9. The wafer position adjustment mechanism is shown in Figure 1〇, and the distance between the two needles and 33B ends is corresponding to! The distance between the two electrodes of the wafer is fixed to the turntable 51. The rotary table 51 is rotatably supported by the revolving mobile station (10). The X-axis moving table 52 is supported to move in the y-axis direction (four) in the yaw-axis direction. The γ-axis moving table 53 is movably supported in the direction of the base axis. The wafer position adjustment mechanism of Fig. 1() can be realized by a conventional moving mechanism, and it is preferable to use a moving mechanism such as a piezoelectric element which can perform a high-speed operation. Further, in the second embodiment, it is also possible to use a three-dimensional moving mechanism of the mobile station 26 to perform a dry motion corresponding to the vector ρ _ in FIG. 9 by using a three-dimensional moving mechanism of the mobile station 26, so that 1 The position adjustment mechanism of the wafer can be rotated only. In the first embodiment, the type of the squeezing squeegee attached to the affixed adhesive tape is held on the sill of the stage, but as shown in FIG. The stage 26 is provided with a plurality of suction ports of the vacuum suction mechanism to simultaneously fix the plurality of wafers. In this case, it is also difficult to precisely set the position and rotation of the plurality of wafers 14 so that the position of the needles contacting the electrodes of the plurality of wafers 14 is set to move.
針位置移動機構，而將針之位置對正於晶片14之電極之位 置後，使針接觸於電極。 如圖11所示，保持晶片之情形，設置以真空吸附等保持 所欲保持之複數晶片而同時將其搬送至載台上，將檢查結 束之複數晶片同時搬送至載台外之搬送機構。藉此 行晶片之有效之檢查。 以上’已說明本發明之實施例，但本發明並不限於所說 明之實施例，當然可實施各種變形例。例如，在實施例 中，以LED之檢查為例加以說明，但本發明也可適用於電 阻、電晶體、1C等其他元件之檢查。 又，在實施例中，說明同時使探針接觸於4個晶片之8個 電極之例，但只要是2個以上之晶片，其個數不受特別限 定0 產業上之可利用性 只要是有必要以由晶圓分離之狀態檢查之元件，任何元 件之檢查均可適用本發明。 129742.doc 17 200938859 【圖式簡單說明】 圖1A至圖1C係本發明之多晶片探針儀所檢查之晶片之 供應型態之一例，表示分離於貼附有導線架之黏著帶之晶 片之貼附狀態之圖。 圖2係說明分離後之晶片之排列狀態之例之圖。 圖3係表示本發明之第1實施例之多晶片探針儀之概略構 成之圖。 圖4A及圖4B係表示第1實施例之針頭與光檢測單元之部 0 分之構成之圖。 圖5A及圖5B係表示同時接觸針之晶片之排列例之圖。 圖6係表示在第1實施例之檢查動作之流程圖。 圖7 A及圖7B係表示同時接觸針之晶片之排列之變形例 之圖。 圖8A及圖8B係表示電極所接觸之針之支數之變形例之 圖。 圖9係說明本發明之第2實施例之定位原理之圖。 © 圖10係表示第2實施例之探針移動機構之概略構成之 圖。 - 圖11係表示分離後之晶片之載台上之保持型態之變形例 之圖。 【主要元件符號說明】 11 架 12 黏著帶 13 晶圓 129742.doc 18· 200938859 14、14S、14， 晶片 15 電極 21 基台 22 移動空間 23 X移動台 24 Y移動台 25 Θ旋轉機構 26 載台 © 27 支柱 28 上板 29 顯微鏡 31 針頭 33 電極之針 33A、33B、33E 針 34E 針保持單元 35E 移動單元 ❿ 36A 針單元 36B〜36H 針位置調整機構 . 36E 移動機構 40 光檢測單元 41 光功率計 42 支持部 43 光功率計移動機構 44 光纖 129742.doc -19- 200938859 45 中繼單元 46 移動支持部 47 纖維移動機構 51 旋轉台 52 X軸移動台 - 53 Y軸移動台 54 基台 C0、Cl 中心位置 ❹ P 向量 R 基準電極 ❹ 129742.doc 20-The needle position moves the mechanism, and after the position of the needle is aligned with the position of the electrode of the wafer 14, the needle is brought into contact with the electrode. As shown in Fig. 11, in the case of holding the wafer, a plurality of wafers to be held by vacuum suction or the like are held while being transported to the stage, and the plurality of wafers which have been inspected are simultaneously transferred to the transfer mechanism outside the stage. This is an effective check of the wafer. The embodiments of the present invention have been described above, but the present invention is not limited to the embodiments described, and various modifications can of course be implemented. For example, in the embodiment, the inspection of the LED is taken as an example, but the present invention is also applicable to the inspection of other components such as a resistor, a transistor, and 1C. Further, in the embodiment, an example in which the probe is brought into contact with eight electrodes of four wafers is described. However, the number of the wafers is not particularly limited as long as it is two or more wafers. It is necessary to inspect the components in the state separated by the wafer, and any component inspection can be applied to the present invention. 129742.doc 17 200938859 [Simplified Schematic] FIG. 1A to FIG. 1C are diagrams showing an example of a supply pattern of a wafer inspected by the multi-wafer probe apparatus of the present invention, showing a wafer separated from an adhesive tape to which a lead frame is attached. A diagram of the attached state. Fig. 2 is a view showing an example of an arrangement state of the separated wafers. Fig. 3 is a view showing the schematic configuration of a multi-wafer prober according to a first embodiment of the present invention. 4A and 4B are views showing the configuration of the portion of the needle and the photodetecting unit of the first embodiment. 5A and 5B are views showing an arrangement example of wafers that simultaneously contact a needle. Fig. 6 is a flow chart showing the inspection operation in the first embodiment. Fig. 7A and Fig. 7B are views showing a modification of the arrangement of the wafers which simultaneously contact the needles. Figs. 8A and 8B are views showing a modification of the number of needles to which the electrodes are in contact. Fig. 9 is a view for explaining the principle of positioning of the second embodiment of the present invention. Fig. 10 is a view showing a schematic configuration of a probe moving mechanism of the second embodiment. - Fig. 11 is a view showing a modification of the holding pattern on the stage of the wafer after separation. [Main component symbol description] 11 frame 12 adhesive tape 13 wafer 129742.doc 18· 200938859 14, 14S, 14, wafer 15 electrode 21 base 22 moving space 23 X mobile station 24 Y mobile station 25 Θ rotating mechanism 26 stage © 27 Pillar 28 Upper plate 29 Microscope 31 Needle 33 Electrode needle 33A, 33B, 33E Needle 34E Needle holding unit 35E Movement unit ❿ 36A Needle unit 36B to 36H Needle position adjustment mechanism. 36E Movement mechanism 40 Light detection unit 41 Optical power meter 42 Supporting unit 43 Optical power meter moving mechanism 44 Optical fiber 129742.doc -19- 200938859 45 Relay unit 46 Moving support unit 47 Fiber moving mechanism 51 Rotating table 52 X-axis moving table - 53 Y-axis moving table 54 Base station C0, Cl Center position ❹ P Vector R Reference electrode 129 129742.doc 20-