JP4097950B2 - 分布帰還型レーザ装置、半導体光装置および分布帰還型レーザ装置の製造方法 - Google Patents

分布帰還型レーザ装置、半導体光装置および分布帰還型レーザ装置の製造方法 Download PDF

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Publication number
JP4097950B2
JP4097950B2 JP2002033607A JP2002033607A JP4097950B2 JP 4097950 B2 JP4097950 B2 JP 4097950B2 JP 2002033607 A JP2002033607 A JP 2002033607A JP 2002033607 A JP2002033607 A JP 2002033607A JP 4097950 B2 JP4097950 B2 JP 4097950B2
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Japan
Prior art keywords
layer
diffraction grating
distributed feedback
feedback laser
light distribution
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JP2002033607A
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English (en)
Japanese (ja)
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JP2003234540A (ja
JP2003234540A5 (enExample
Inventor
雄一郎 奥貫
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002033607A priority Critical patent/JP4097950B2/ja
Priority to TW091116345A priority patent/TW557620B/zh
Priority to US10/206,217 priority patent/US6912239B2/en
Priority to DE10245544A priority patent/DE10245544B4/de
Priority to KR1020020063520A priority patent/KR100572745B1/ko
Priority to CNB021473390A priority patent/CN1224146C/zh
Publication of JP2003234540A publication Critical patent/JP2003234540A/ja
Publication of JP2003234540A5 publication Critical patent/JP2003234540A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2002033607A 2002-02-12 2002-02-12 分布帰還型レーザ装置、半導体光装置および分布帰還型レーザ装置の製造方法 Expired - Fee Related JP4097950B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002033607A JP4097950B2 (ja) 2002-02-12 2002-02-12 分布帰還型レーザ装置、半導体光装置および分布帰還型レーザ装置の製造方法
TW091116345A TW557620B (en) 2002-02-12 2002-07-23 Distributed feedback laser device
US10/206,217 US6912239B2 (en) 2002-02-12 2002-07-29 Distributed feedback laser device
DE10245544A DE10245544B4 (de) 2002-02-12 2002-09-30 Distributed-Feedback-Laservorrichtung
KR1020020063520A KR100572745B1 (ko) 2002-02-12 2002-10-17 분포귀환형 레이저장치
CNB021473390A CN1224146C (zh) 2002-02-12 2002-10-18 分布反馈型激光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002033607A JP4097950B2 (ja) 2002-02-12 2002-02-12 分布帰還型レーザ装置、半導体光装置および分布帰還型レーザ装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003234540A JP2003234540A (ja) 2003-08-22
JP2003234540A5 JP2003234540A5 (enExample) 2005-08-04
JP4097950B2 true JP4097950B2 (ja) 2008-06-11

Family

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Family Applications (1)

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JP2002033607A Expired - Fee Related JP4097950B2 (ja) 2002-02-12 2002-02-12 分布帰還型レーザ装置、半導体光装置および分布帰還型レーザ装置の製造方法

Country Status (6)

Country Link
US (1) US6912239B2 (enExample)
JP (1) JP4097950B2 (enExample)
KR (1) KR100572745B1 (enExample)
CN (1) CN1224146C (enExample)
DE (1) DE10245544B4 (enExample)
TW (1) TW557620B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100679372B1 (ko) 2005-02-25 2007-02-05 엘에스전선 주식회사 매립된 회절격자를 가진 레이저 다이오드 및 그 제조방법
CN1333500C (zh) * 2005-07-27 2007-08-22 清华大学 一种多段式分布反馈半导体激光器
US7575943B2 (en) * 2005-12-06 2009-08-18 Electronics And Telecommunications Research Institute Quantum dot laser diode and method of manufacturing the same
US8050525B2 (en) * 2006-10-11 2011-11-01 Futurewei Technologies, Inc. Method and system for grating taps for monitoring a DWDM transmitter array integrated on a PLC platform
US8069020B2 (en) * 2007-09-19 2011-11-29 Tokyo Electron Limited Generating simulated diffraction signal using a dispersion function relating process parameter to dispersion
WO2010116460A1 (ja) 2009-03-30 2010-10-14 富士通株式会社 光素子及びその製造方法
JP6155770B2 (ja) * 2013-03-29 2017-07-05 富士通株式会社 光素子及び光モジュール
JP7645653B2 (ja) * 2021-02-10 2025-03-14 古河電気工業株式会社 半導体レーザ素子

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222189A (ja) * 1985-03-15 1986-10-02 Sharp Corp 半導体レ−ザ
JPS63208290A (ja) * 1987-02-25 1988-08-29 Hitachi Ltd 半導体レ−ザ装置
US5177758A (en) * 1989-06-14 1993-01-05 Hitachi, Ltd. Semiconductor laser device with plural active layers and changing optical properties
JP2550721B2 (ja) * 1989-08-30 1996-11-06 三菱電機株式会社 単一波長半導体レーザおよびその製造方法
JPH04105386A (ja) * 1990-08-24 1992-04-07 Nec Corp 波長可変半導体レーザ
JPH04291780A (ja) * 1991-03-20 1992-10-15 Fujitsu Ltd 半導体発光装置
EP0526128B1 (en) * 1991-07-24 1997-06-11 Sharp Kabushiki Kaisha A method for producing a distributed feedback semiconductor laser device
JP2982422B2 (ja) * 1991-09-20 1999-11-22 三菱電機株式会社 半導体レーザおよびその製造方法
JPH05175586A (ja) * 1991-12-24 1993-07-13 Fujitsu Ltd 半導体波長可変素子
JPH0621574A (ja) * 1992-07-03 1994-01-28 Fujikura Ltd 半導体レーザおよびその製造方法
US5295150A (en) * 1992-12-11 1994-03-15 Eastman Kodak Company Distributed feedback-channeled substrate planar semiconductor laser
JP3368607B2 (ja) * 1993-02-04 2003-01-20 住友電気工業株式会社 分布帰還型半導体レーザ
EP0620475B1 (en) * 1993-03-15 1998-12-30 Canon Kabushiki Kaisha Optical devices and optical communication systems using the optical device
JP3429340B2 (ja) * 1993-10-12 2003-07-22 松下電器産業株式会社 半導体レーザおよびその製造方法
US5619523A (en) * 1995-09-08 1997-04-08 David Sarnoff Research Center, Inc. Semiconductor distributed feedback laser diode
JP3387746B2 (ja) * 1996-07-31 2003-03-17 キヤノン株式会社 屈曲チャンネルストライプの偏波変調可能な半導体レーザ
JPH10209555A (ja) * 1997-01-17 1998-08-07 Fujikura Ltd 面発光型半導体レーザ
JPH11243256A (ja) * 1997-12-03 1999-09-07 Canon Inc 分布帰還形半導体レーザとその駆動方法
JPH11233898A (ja) * 1997-12-03 1999-08-27 Canon Inc 分布帰還型半導体レーザとその駆動方法
JP2000114652A (ja) * 1998-10-05 2000-04-21 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
EP1043818B1 (en) * 1999-04-09 2011-07-20 Mitsui Chemicals, Inc. Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser
JP2000357841A (ja) * 1999-04-09 2000-12-26 Mitsui Chemicals Inc 半導体レーザ素子、半導体レーザモジュール、希土類添加光ファイバ増幅器、およびファイバレーザ
JP3745985B2 (ja) * 2001-01-24 2006-02-15 古河電気工業株式会社 複素結合型の分布帰還型半導体レーザ素子

Also Published As

Publication number Publication date
JP2003234540A (ja) 2003-08-22
CN1224146C (zh) 2005-10-19
US20030152126A1 (en) 2003-08-14
KR100572745B1 (ko) 2006-04-25
DE10245544A1 (de) 2003-08-28
US6912239B2 (en) 2005-06-28
TW557620B (en) 2003-10-11
KR20030068373A (ko) 2003-08-21
DE10245544B4 (de) 2005-08-11
CN1438743A (zh) 2003-08-27

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