CN1224146C - 分布反馈型激光装置 - Google Patents

分布反馈型激光装置 Download PDF

Info

Publication number
CN1224146C
CN1224146C CNB021473390A CN02147339A CN1224146C CN 1224146 C CN1224146 C CN 1224146C CN B021473390 A CNB021473390 A CN B021473390A CN 02147339 A CN02147339 A CN 02147339A CN 1224146 C CN1224146 C CN 1224146C
Authority
CN
China
Prior art keywords
layer
diffraction grating
laser device
light
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021473390A
Other languages
English (en)
Chinese (zh)
Other versions
CN1438743A (zh
Inventor
奥贯雄一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sunley Storage Co ltd
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1438743A publication Critical patent/CN1438743A/zh
Application granted granted Critical
Publication of CN1224146C publication Critical patent/CN1224146C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
CNB021473390A 2002-02-12 2002-10-18 分布反馈型激光装置 Expired - Fee Related CN1224146C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP33607/02 2002-02-12
JP2002033607A JP4097950B2 (ja) 2002-02-12 2002-02-12 分布帰還型レーザ装置、半導体光装置および分布帰還型レーザ装置の製造方法
JP33607/2002 2002-02-12

Publications (2)

Publication Number Publication Date
CN1438743A CN1438743A (zh) 2003-08-27
CN1224146C true CN1224146C (zh) 2005-10-19

Family

ID=27654887

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021473390A Expired - Fee Related CN1224146C (zh) 2002-02-12 2002-10-18 分布反馈型激光装置

Country Status (6)

Country Link
US (1) US6912239B2 (enExample)
JP (1) JP4097950B2 (enExample)
KR (1) KR100572745B1 (enExample)
CN (1) CN1224146C (enExample)
DE (1) DE10245544B4 (enExample)
TW (1) TW557620B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100679372B1 (ko) 2005-02-25 2007-02-05 엘에스전선 주식회사 매립된 회절격자를 가진 레이저 다이오드 및 그 제조방법
CN1333500C (zh) * 2005-07-27 2007-08-22 清华大学 一种多段式分布反馈半导体激光器
US7575943B2 (en) * 2005-12-06 2009-08-18 Electronics And Telecommunications Research Institute Quantum dot laser diode and method of manufacturing the same
US8050525B2 (en) * 2006-10-11 2011-11-01 Futurewei Technologies, Inc. Method and system for grating taps for monitoring a DWDM transmitter array integrated on a PLC platform
US8069020B2 (en) * 2007-09-19 2011-11-29 Tokyo Electron Limited Generating simulated diffraction signal using a dispersion function relating process parameter to dispersion
WO2010116460A1 (ja) 2009-03-30 2010-10-14 富士通株式会社 光素子及びその製造方法
JP6155770B2 (ja) * 2013-03-29 2017-07-05 富士通株式会社 光素子及び光モジュール
JP7645653B2 (ja) * 2021-02-10 2025-03-14 古河電気工業株式会社 半導体レーザ素子

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222189A (ja) * 1985-03-15 1986-10-02 Sharp Corp 半導体レ−ザ
JPS63208290A (ja) * 1987-02-25 1988-08-29 Hitachi Ltd 半導体レ−ザ装置
US5177758A (en) * 1989-06-14 1993-01-05 Hitachi, Ltd. Semiconductor laser device with plural active layers and changing optical properties
JP2550721B2 (ja) * 1989-08-30 1996-11-06 三菱電機株式会社 単一波長半導体レーザおよびその製造方法
JPH04105386A (ja) * 1990-08-24 1992-04-07 Nec Corp 波長可変半導体レーザ
JPH04291780A (ja) * 1991-03-20 1992-10-15 Fujitsu Ltd 半導体発光装置
EP0526128B1 (en) * 1991-07-24 1997-06-11 Sharp Kabushiki Kaisha A method for producing a distributed feedback semiconductor laser device
JP2982422B2 (ja) * 1991-09-20 1999-11-22 三菱電機株式会社 半導体レーザおよびその製造方法
JPH05175586A (ja) * 1991-12-24 1993-07-13 Fujitsu Ltd 半導体波長可変素子
JPH0621574A (ja) * 1992-07-03 1994-01-28 Fujikura Ltd 半導体レーザおよびその製造方法
US5295150A (en) * 1992-12-11 1994-03-15 Eastman Kodak Company Distributed feedback-channeled substrate planar semiconductor laser
JP3368607B2 (ja) * 1993-02-04 2003-01-20 住友電気工業株式会社 分布帰還型半導体レーザ
EP0620475B1 (en) * 1993-03-15 1998-12-30 Canon Kabushiki Kaisha Optical devices and optical communication systems using the optical device
JP3429340B2 (ja) * 1993-10-12 2003-07-22 松下電器産業株式会社 半導体レーザおよびその製造方法
US5619523A (en) * 1995-09-08 1997-04-08 David Sarnoff Research Center, Inc. Semiconductor distributed feedback laser diode
JP3387746B2 (ja) * 1996-07-31 2003-03-17 キヤノン株式会社 屈曲チャンネルストライプの偏波変調可能な半導体レーザ
JPH10209555A (ja) * 1997-01-17 1998-08-07 Fujikura Ltd 面発光型半導体レーザ
JPH11243256A (ja) * 1997-12-03 1999-09-07 Canon Inc 分布帰還形半導体レーザとその駆動方法
JPH11233898A (ja) * 1997-12-03 1999-08-27 Canon Inc 分布帰還型半導体レーザとその駆動方法
JP2000114652A (ja) * 1998-10-05 2000-04-21 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
EP1043818B1 (en) * 1999-04-09 2011-07-20 Mitsui Chemicals, Inc. Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser
JP2000357841A (ja) * 1999-04-09 2000-12-26 Mitsui Chemicals Inc 半導体レーザ素子、半導体レーザモジュール、希土類添加光ファイバ増幅器、およびファイバレーザ
JP3745985B2 (ja) * 2001-01-24 2006-02-15 古河電気工業株式会社 複素結合型の分布帰還型半導体レーザ素子

Also Published As

Publication number Publication date
JP2003234540A (ja) 2003-08-22
US20030152126A1 (en) 2003-08-14
KR100572745B1 (ko) 2006-04-25
DE10245544A1 (de) 2003-08-28
US6912239B2 (en) 2005-06-28
JP4097950B2 (ja) 2008-06-11
TW557620B (en) 2003-10-11
KR20030068373A (ko) 2003-08-21
DE10245544B4 (de) 2005-08-11
CN1438743A (zh) 2003-08-27

Similar Documents

Publication Publication Date Title
CN1245789C (zh) 具有隔离层的GaN系列表面发射激光二极管及其制造方法
TWI381602B (zh) Semiconductor laser element and manufacturing method thereof
CN1602569A (zh) 半导体发光元件及其制造方法
CN1638220A (zh) 氮化物半导体激光器件及其制造方法
CN1961432A (zh) 氮化物半导体元件及其制造方法
CN1557042A (zh) 多光束型半导体激光器、半导体发光器件以及半导体装置
CN100337338C (zh) 半导体装置及半导体基板
CN118399199A (zh) 半导体激光元件及其制造方法
CN1224146C (zh) 分布反馈型激光装置
CN1677775A (zh) 氮化物系半导体元件的制造方法及氮化物系半导体元件
JPH08242034A (ja) 分布帰還型半導体レーザ装置
CN1945365A (zh) 由单步mocvd制造的掩埋异质结构器件
CN1444254A (zh) 氮化物半导体，半导体器件及其制造方法
CN1697271A (zh) 半导体激光器及其制造工艺
TWI236195B (en) Vertical cavity surface emitting laser including indium and antimony in the active region
CN1144396A (zh) 半导体器件的制造方法和半导体器件
CN1262053C (zh) 包括多个光学有源区的半导体激光器
CN111446621B (zh) 半导体激光元件及其制造方法
CN1484350A (zh) 半导体激光装置
CN100340038C (zh) 平面发射型半导体激光器件及其制造方法
CN1736009A (zh) 半导体发光元件及其制造方法
JP2007095857A (ja) 半導体レーザ
CN1622408A (zh) 半导体激光元件及其制造方法
CN1114979C (zh) 半导体激光器的制造方法
JPH11204878A (ja) 半導体レーザ及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200629

Address after: Ai Erlandubailin

Patentee after: Argona Technology Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: Mitsubishi Electric Corp.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200901

Address after: Suite 23, Hyde building, carikming Park, Dublin, Ireland

Patentee after: Sunley storage Co.,Ltd.

Address before: Ai Erlandubailin

Patentee before: Argona Technology Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20051019

Termination date: 20211018