JP4031329B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4031329B2
JP4031329B2 JP2002273409A JP2002273409A JP4031329B2 JP 4031329 B2 JP4031329 B2 JP 4031329B2 JP 2002273409 A JP2002273409 A JP 2002273409A JP 2002273409 A JP2002273409 A JP 2002273409A JP 4031329 B2 JP4031329 B2 JP 4031329B2
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Prior art keywords
cavity
region
semiconductor
semiconductor substrate
semiconductor device
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Expired - Fee Related
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JP2002273409A
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Japanese (ja)
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JP2004111721A5 (OSRAM
JP2004111721A (ja
Inventor
和美 井納
秀美 石内
聡 松田
力 佐藤
一郎 水島
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Toshiba Corp
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Toshiba Corp
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Priority to JP2002273409A priority Critical patent/JP4031329B2/ja
Priority to US10/665,614 priority patent/US7009273B2/en
Publication of JP2004111721A publication Critical patent/JP2004111721A/ja
Publication of JP2004111721A5 publication Critical patent/JP2004111721A5/ja
Priority to US11/315,796 priority patent/US7145215B2/en
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Publication of JP4031329B2 publication Critical patent/JP4031329B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2002273409A 2002-09-19 2002-09-19 半導体装置及びその製造方法 Expired - Fee Related JP4031329B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002273409A JP4031329B2 (ja) 2002-09-19 2002-09-19 半導体装置及びその製造方法
US10/665,614 US7009273B2 (en) 2002-09-19 2003-09-19 Semiconductor device with a cavity therein and a method of manufacturing the same
US11/315,796 US7145215B2 (en) 2002-09-19 2005-12-22 Semiconductor device with a cavity therein and a method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002273409A JP4031329B2 (ja) 2002-09-19 2002-09-19 半導体装置及びその製造方法

Publications (3)

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JP2004111721A JP2004111721A (ja) 2004-04-08
JP2004111721A5 JP2004111721A5 (OSRAM) 2005-08-25
JP4031329B2 true JP4031329B2 (ja) 2008-01-09

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JP2002273409A Expired - Fee Related JP4031329B2 (ja) 2002-09-19 2002-09-19 半導体装置及びその製造方法

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US (2) US7009273B2 (OSRAM)
JP (1) JP4031329B2 (OSRAM)

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JP4074051B2 (ja) * 1999-08-31 2008-04-09 株式会社東芝 半導体基板およびその製造方法
US7173841B2 (en) * 2004-12-03 2007-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic memory array
US7071047B1 (en) * 2005-01-28 2006-07-04 International Business Machines Corporation Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions
DE602005007235D1 (de) * 2005-09-28 2008-07-10 St Microelectronics Srl Verfahren zum Herstellen von dicken hängenden Strukturen aus Halbleitermaterial
US8395199B2 (en) * 2006-03-25 2013-03-12 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US7285480B1 (en) * 2006-04-07 2007-10-23 International Business Machines Corporation Integrated circuit chip with FETs having mixed body thicknesses and method of manufacture thereof
US7932548B2 (en) 2006-07-14 2011-04-26 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US8305829B2 (en) * 2009-02-23 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Memory power gating circuit for controlling internal voltage of a memory array, system and method for controlling the same
US8305790B2 (en) * 2009-03-16 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical anti-fuse and related applications
US8957482B2 (en) * 2009-03-31 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Electrical fuse and related applications
US8912602B2 (en) * 2009-04-14 2014-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods for forming the same
US8461015B2 (en) * 2009-07-08 2013-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. STI structure and method of forming bottom void in same
US8440517B2 (en) 2010-10-13 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of fabricating the same
US8264032B2 (en) 2009-09-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Accumulation type FinFET, circuits and fabrication method thereof
US8472227B2 (en) * 2010-01-27 2013-06-25 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and methods for forming the same
US8264021B2 (en) * 2009-10-01 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Finfets and methods for forming the same
US8623728B2 (en) * 2009-07-28 2014-01-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high germanium concentration SiGe stressor
US8629478B2 (en) * 2009-07-31 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure for high mobility multiple-gate transistor
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US8482073B2 (en) * 2010-03-25 2013-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit including FINFETs and methods for forming the same
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US9343463B2 (en) * 2009-09-29 2016-05-17 Headway Technologies, Inc. Method of high density memory fabrication
US20110097867A1 (en) * 2009-10-22 2011-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of controlling gate thicknesses in forming fusi gates
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US8674472B2 (en) * 2010-08-10 2014-03-18 International Business Machines Corporation Low harmonic RF switch in SOI
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CN103730361B (zh) * 2012-10-10 2018-02-13 中国科学院微电子研究所 半导体器件制造方法
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Publication number Publication date
JP2004111721A (ja) 2004-04-08
US20060157789A1 (en) 2006-07-20
US20040129998A1 (en) 2004-07-08
US7009273B2 (en) 2006-03-07
US7145215B2 (en) 2006-12-05

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