JP4006251B2 - ミラー装置、ミラーの調整方法、露光装置、露光方法及び半導体デバイスの製造方法 - Google Patents

ミラー装置、ミラーの調整方法、露光装置、露光方法及び半導体デバイスの製造方法 Download PDF

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Publication number
JP4006251B2
JP4006251B2 JP2002078917A JP2002078917A JP4006251B2 JP 4006251 B2 JP4006251 B2 JP 4006251B2 JP 2002078917 A JP2002078917 A JP 2002078917A JP 2002078917 A JP2002078917 A JP 2002078917A JP 4006251 B2 JP4006251 B2 JP 4006251B2
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Japan
Prior art keywords
mirror
exposure
temperature
incident
light
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Expired - Fee Related
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JP2002078917A
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English (en)
Japanese (ja)
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JP2003282398A (ja
JP2003282398A5 (enExample
Inventor
文太郎 正木
明 三宅
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2002078917A priority Critical patent/JP4006251B2/ja
Priority to US10/389,925 priority patent/US6831744B2/en
Priority to EP03251695A priority patent/EP1353232A3/en
Publication of JP2003282398A publication Critical patent/JP2003282398A/ja
Publication of JP2003282398A5 publication Critical patent/JP2003282398A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2002078917A 2002-03-20 2002-03-20 ミラー装置、ミラーの調整方法、露光装置、露光方法及び半導体デバイスの製造方法 Expired - Fee Related JP4006251B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002078917A JP4006251B2 (ja) 2002-03-20 2002-03-20 ミラー装置、ミラーの調整方法、露光装置、露光方法及び半導体デバイスの製造方法
US10/389,925 US6831744B2 (en) 2002-03-20 2003-03-18 Mirror device, mirror adjustment method, exposure apparatus, exposure method, and semiconductor device manufacturing method
EP03251695A EP1353232A3 (en) 2002-03-20 2003-03-19 Mirror device, mirror adjustment method, exposure apparatus, exposure method, and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002078917A JP4006251B2 (ja) 2002-03-20 2002-03-20 ミラー装置、ミラーの調整方法、露光装置、露光方法及び半導体デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2003282398A JP2003282398A (ja) 2003-10-03
JP2003282398A5 JP2003282398A5 (enExample) 2005-09-08
JP4006251B2 true JP4006251B2 (ja) 2007-11-14

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JP2002078917A Expired - Fee Related JP4006251B2 (ja) 2002-03-20 2002-03-20 ミラー装置、ミラーの調整方法、露光装置、露光方法及び半導体デバイスの製造方法

Country Status (3)

Country Link
US (1) US6831744B2 (enExample)
EP (1) EP1353232A3 (enExample)
JP (1) JP4006251B2 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4458333B2 (ja) 2003-02-13 2010-04-28 キヤノン株式会社 露光装置、およびデバイスの製造方法
JP4311711B2 (ja) * 2003-02-24 2009-08-12 キヤノン株式会社 露光装置及びデバイス製造方法
DE10317662A1 (de) * 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Projektionsobjektiv, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur Herstellung einer Halbleiterschaltung
US7025498B2 (en) * 2003-05-30 2006-04-11 Asml Holding N.V. System and method of measuring thermal expansion
JP2005175187A (ja) * 2003-12-11 2005-06-30 Canon Inc 光学部材、冷却方法、冷却装置、露光装置、デバイス製造方法、及びデバイス
JP4903691B2 (ja) * 2004-05-06 2012-03-28 カール ツァイス レーザー オプティクス ゲーエムベーハー 熱挙動が改良された光学部品
US7423765B2 (en) * 2004-07-31 2008-09-09 Carl Zeiss Smt Ag Optical system of a microlithographic projection exposure apparatus
US7423721B2 (en) * 2004-12-15 2008-09-09 Asml Netherlands B.V. Lithographic apparatus
US7462841B2 (en) 2005-10-19 2008-12-09 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and use of a radiation collector
TWI454859B (zh) * 2006-03-30 2014-10-01 尼康股份有限公司 移動體裝置、曝光裝置與曝光方法以及元件製造方法
US20090288003A1 (en) * 2006-05-31 2009-11-19 Marinkovic Sinisa V Cost effective system and method for monitoring machinery units
US8052289B2 (en) * 2006-06-07 2011-11-08 Asml Netherlands B.V. Mirror array for lithography
US8760615B2 (en) * 2007-05-24 2014-06-24 Asml Netherlands B.V. Lithographic apparatus having encoder type position sensor system
US8687166B2 (en) * 2007-05-24 2014-04-01 Asml Netherlands B.V. Lithographic apparatus having an encoder position sensor system
DE102009054869B4 (de) * 2009-04-09 2022-02-17 Carl Zeiss Smt Gmbh Spiegel zur Führung eines Strahlungsbündels, Vorrichtungen mit einem derartigen Spiegel sowie Verfahren zur Herstellung mikro- oder nanostrukturierter Bauelemente
CN102422195B (zh) * 2009-04-23 2016-01-13 剑桥技术股份有限公司 提供耦合至受限旋转的马达的改进性能的扫描镜的系统与方法
US8746975B2 (en) * 2011-02-17 2014-06-10 Media Lario S.R.L. Thermal management systems, assemblies and methods for grazing incidence collectors for EUV lithography
DE102011004446A1 (de) * 2011-02-21 2012-08-23 Carl Zeiss Smt Gmbh Gekühltes optisches Element
US8731139B2 (en) * 2011-05-04 2014-05-20 Media Lario S.R.L. Evaporative thermal management of grazing incidence collectors for EUV lithography
DE102014203144A1 (de) * 2014-02-21 2015-08-27 Carl Zeiss Smt Gmbh Baugruppe eines optischen Systems, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
SG11201707040PA (en) * 2015-03-24 2017-10-30 Asml Netherlands Bv A lithography apparatus and a method of manufacturing a device
DE102015212859A1 (de) * 2015-07-09 2016-07-07 Carl Zeiss Smt Gmbh Lithographieanlage sowie Verfahren
WO2017130346A1 (ja) * 2016-01-28 2017-08-03 ギガフォトン株式会社 極端紫外光生成装置
DE102019201810A1 (de) * 2019-02-12 2020-08-13 Carl Zeiss Smt Gmbh Steuerungssystem, optisches system und verfahren
US11506986B2 (en) * 2020-04-09 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal controlling method in lithography system
JP7579152B2 (ja) * 2021-01-13 2024-11-07 株式会社荏原製作所 半導体製造装置におけるデータの管理方法、およびリングバッファを備えた制御装置

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5222112A (en) 1990-12-27 1993-06-22 Hitachi, Ltd. X-ray pattern masking by a reflective reduction projection optical system
DE69220868T2 (de) 1991-09-07 1997-11-06 Canon K.K., Tokio/Tokyo System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen
CA2079562C (en) * 1991-09-30 1997-01-07 Kazuyuki Kasumi X-ray exposure apparatus
US5394451A (en) 1991-10-08 1995-02-28 Canon Kabushiki Kaisha Optical arrangement for exposure apparatus
DE69322345T2 (de) 1992-09-14 1999-05-20 Canon K.K., Tokio/Tokyo Synchrotron-Röntgenbelichtungsverfahren
JP3049680B2 (ja) 1993-06-14 2000-06-05 キヤノン株式会社 ビーム位置検出装置及びこれを用いたシステム
US6038279A (en) 1995-10-16 2000-03-14 Canon Kabushiki Kaisha X-ray generating device, and exposure apparatus and semiconductor device production method using the X-ray generating device
US5822141A (en) * 1996-03-27 1998-10-13 International Business Machines Corporation High speed FET write driver for an inductive head
JP3284045B2 (ja) 1996-04-30 2002-05-20 キヤノン株式会社 Ｘ線光学装置およびデバイス製造方法
JP3706691B2 (ja) 1996-08-26 2005-10-12 キヤノン株式会社 Ｘ線縮小投影露光装置及びこれを用いた半導体デバイス製造方法
US5880626A (en) * 1996-12-02 1999-03-09 Vtc, Inc. Active damping for a disk drive write circuit
JP3689516B2 (ja) 1997-01-29 2005-08-31 キヤノン株式会社 電子ビーム露光装置
JPH10284390A (ja) 1997-04-02 1998-10-23 Nikon Corp 反射鏡の形状制御装置、形状制御方法及び露光装置
US6040954A (en) * 1997-04-17 2000-03-21 International Business Machines Corporation High speed write driver for magnetic inductive write head using a half-switched H-driver
US5939940A (en) * 1997-06-11 1999-08-17 Stmicroelectronics, Inc. Low noise preamplifier for a magnetoresistive data transducer
US6107873A (en) * 1998-03-30 2000-08-22 National Semiconductor Corporation Low noise common-emitter preamplifier for magneto-resistive heads
JP2000036449A (ja) * 1998-07-17 2000-02-02 Nikon Corp 露光装置
JP2000100685A (ja) 1998-09-17 2000-04-07 Nikon Corp 露光装置及び該装置を用いた露光方法
US6185057B1 (en) * 1998-10-21 2001-02-06 International Business Machines Corporation Method and apparatus for increasing the speed of write driver circuitry
US6175463B1 (en) * 1999-03-31 2001-01-16 Sony Corporation Architecture for hard disk drive write preamplifiers
JP2000286189A (ja) * 1999-03-31 2000-10-13 Nikon Corp 露光装置および露光方法ならびにデバイス製造方法
JP3870002B2 (ja) * 2000-04-07 2007-01-17 キヤノン株式会社 露光装置
JP2002100551A (ja) 2000-09-21 2002-04-05 Nikon Corp 熱変形の自己補償機構付き反射ミラー
JP2003022950A (ja) 2001-07-05 2003-01-24 Canon Inc Ｘ線光源用デブリ除去装置及び、デブリ除去装置を用いた露光装置
US6846086B2 (en) * 2002-03-11 2005-01-25 Intel Corporation Mirror assembly with thermal contour control
US20030235682A1 (en) * 2002-06-21 2003-12-25 Sogard Michael R. Method and device for controlling thermal distortion in elements of a lithography system

Also Published As

Publication number Publication date
EP1353232A3 (en) 2004-01-02
US20030179377A1 (en) 2003-09-25
EP1353232A2 (en) 2003-10-15
US6831744B2 (en) 2004-12-14
JP2003282398A (ja) 2003-10-03

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