JP4002749B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4002749B2
JP4002749B2 JP2001348723A JP2001348723A JP4002749B2 JP 4002749 B2 JP4002749 B2 JP 4002749B2 JP 2001348723 A JP2001348723 A JP 2001348723A JP 2001348723 A JP2001348723 A JP 2001348723A JP 4002749 B2 JP4002749 B2 JP 4002749B2
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JP
Japan
Prior art keywords
circuit
semiconductor memory
redundant
circuits
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001348723A
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English (en)
Japanese (ja)
Other versions
JP2003151295A5 (https=
JP2003151295A (ja
Inventor
和人 古用
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2001348723A priority Critical patent/JP4002749B2/ja
Priority to US10/106,046 priority patent/US6639855B2/en
Priority to KR1020020018425A priority patent/KR100865340B1/ko
Priority to TW091109148A priority patent/TW538530B/zh
Publication of JP2003151295A publication Critical patent/JP2003151295A/ja
Publication of JP2003151295A5 publication Critical patent/JP2003151295A5/ja
Application granted granted Critical
Publication of JP4002749B2 publication Critical patent/JP4002749B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
JP2001348723A 2001-11-14 2001-11-14 半導体装置 Expired - Fee Related JP4002749B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001348723A JP4002749B2 (ja) 2001-11-14 2001-11-14 半導体装置
US10/106,046 US6639855B2 (en) 2001-11-14 2002-03-27 Semiconductor device having a defect relief function of relieving a failure
KR1020020018425A KR100865340B1 (ko) 2001-11-14 2002-04-04 반도체 장치
TW091109148A TW538530B (en) 2001-11-14 2002-05-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001348723A JP4002749B2 (ja) 2001-11-14 2001-11-14 半導体装置

Publications (3)

Publication Number Publication Date
JP2003151295A JP2003151295A (ja) 2003-05-23
JP2003151295A5 JP2003151295A5 (https=) 2005-04-14
JP4002749B2 true JP4002749B2 (ja) 2007-11-07

Family

ID=19161500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001348723A Expired - Fee Related JP4002749B2 (ja) 2001-11-14 2001-11-14 半導体装置

Country Status (4)

Country Link
US (1) US6639855B2 (https=)
JP (1) JP4002749B2 (https=)
KR (1) KR100865340B1 (https=)
TW (1) TW538530B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3597501B2 (ja) * 2001-11-20 2004-12-08 松下電器産業株式会社 半導体集積回路
US6900688B2 (en) * 2002-09-27 2005-05-31 Oki Electric Industry Co., Ltd. Switch circuit
KR101038983B1 (ko) * 2005-06-28 2011-06-03 주식회사 하이닉스반도체 리던던시부를 갖춘 메모리 장치
JP4679627B2 (ja) * 2008-10-29 2011-04-27 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US8879328B2 (en) * 2013-03-15 2014-11-04 Qualcomm Incorporated Sense amplifier column redundancy
JP2021048230A (ja) * 2019-09-18 2021-03-25 キオクシア株式会社 半導体記憶装置
WO2022198829A1 (en) * 2021-03-24 2022-09-29 Yangtze Memory Technologies Co., Ltd. Memory device with failed main bank repair using redundant bank
CN118692545A (zh) 2021-03-24 2024-09-24 长江存储科技有限责任公司 使用冗余存储体进行故障主存储体修复的存储器件
KR102869247B1 (ko) 2021-03-24 2025-10-13 양쯔 메모리 테크놀로지스 씨오., 엘티디. 리던던트 뱅크를 이용하여 결함 메인 뱅크를 리페어하는 메모리 디바이스

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263697A (ja) * 1990-03-13 1991-11-25 Sharp Corp 半導体記憶装置
JPH04255998A (ja) * 1991-02-08 1992-09-10 Nec Ic Microcomput Syst Ltd 半導体記憶装置
KR960016807B1 (ko) * 1994-06-30 1996-12-21 삼성전자 주식회사 반도체 메모리 장치의 리던던시 회로
JPH08145534A (ja) * 1994-11-21 1996-06-07 Fuji Electric Co Ltd リアロード式冷凍ショーケース
JPH08180698A (ja) * 1994-12-22 1996-07-12 Toshiba Corp 半導体記憶装置
JP2930029B2 (ja) 1996-09-20 1999-08-03 日本電気株式会社 半導体メモリ装置
JP3178430B2 (ja) * 1998-09-16 2001-06-18 日本電気株式会社 半導体記憶装置

Also Published As

Publication number Publication date
KR20030039990A (ko) 2003-05-22
US6639855B2 (en) 2003-10-28
TW538530B (en) 2003-06-21
US20030090942A1 (en) 2003-05-15
KR100865340B1 (ko) 2008-10-27
JP2003151295A (ja) 2003-05-23

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