TW538530B - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- TW538530B TW538530B TW091109148A TW91109148A TW538530B TW 538530 B TW538530 B TW 538530B TW 091109148 A TW091109148 A TW 091109148A TW 91109148 A TW91109148 A TW 91109148A TW 538530 B TW538530 B TW 538530B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- redundant
- circuits
- semiconductor memory
- scope
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 217
- 230000015654 memory Effects 0.000 claims description 102
- 210000004027 cell Anatomy 0.000 claims description 80
- 238000013500 data storage Methods 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 238000003491 array Methods 0.000 claims description 10
- 210000001082 somatic cell Anatomy 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 3
- 230000007547 defect Effects 0.000 abstract description 58
- 230000006870 function Effects 0.000 description 35
- 230000001939 inductive effect Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 230000006698 induction Effects 0.000 description 8
- 230000002950 deficient Effects 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001348723A JP4002749B2 (ja) | 2001-11-14 | 2001-11-14 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW538530B true TW538530B (en) | 2003-06-21 |
Family
ID=19161500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091109148A TW538530B (en) | 2001-11-14 | 2002-05-02 | Semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6639855B2 (https=) |
| JP (1) | JP4002749B2 (https=) |
| KR (1) | KR100865340B1 (https=) |
| TW (1) | TW538530B (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3597501B2 (ja) * | 2001-11-20 | 2004-12-08 | 松下電器産業株式会社 | 半導体集積回路 |
| US6900688B2 (en) * | 2002-09-27 | 2005-05-31 | Oki Electric Industry Co., Ltd. | Switch circuit |
| KR101038983B1 (ko) * | 2005-06-28 | 2011-06-03 | 주식회사 하이닉스반도체 | 리던던시부를 갖춘 메모리 장치 |
| JP4679627B2 (ja) * | 2008-10-29 | 2011-04-27 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
| US8879328B2 (en) * | 2013-03-15 | 2014-11-04 | Qualcomm Incorporated | Sense amplifier column redundancy |
| JP2021048230A (ja) * | 2019-09-18 | 2021-03-25 | キオクシア株式会社 | 半導体記憶装置 |
| WO2022198829A1 (en) * | 2021-03-24 | 2022-09-29 | Yangtze Memory Technologies Co., Ltd. | Memory device with failed main bank repair using redundant bank |
| CN118692545A (zh) | 2021-03-24 | 2024-09-24 | 长江存储科技有限责任公司 | 使用冗余存储体进行故障主存储体修复的存储器件 |
| KR102869247B1 (ko) | 2021-03-24 | 2025-10-13 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 리던던트 뱅크를 이용하여 결함 메인 뱅크를 리페어하는 메모리 디바이스 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03263697A (ja) * | 1990-03-13 | 1991-11-25 | Sharp Corp | 半導体記憶装置 |
| JPH04255998A (ja) * | 1991-02-08 | 1992-09-10 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
| KR960016807B1 (ko) * | 1994-06-30 | 1996-12-21 | 삼성전자 주식회사 | 반도체 메모리 장치의 리던던시 회로 |
| JPH08145534A (ja) * | 1994-11-21 | 1996-06-07 | Fuji Electric Co Ltd | リアロード式冷凍ショーケース |
| JPH08180698A (ja) * | 1994-12-22 | 1996-07-12 | Toshiba Corp | 半導体記憶装置 |
| JP2930029B2 (ja) | 1996-09-20 | 1999-08-03 | 日本電気株式会社 | 半導体メモリ装置 |
| JP3178430B2 (ja) * | 1998-09-16 | 2001-06-18 | 日本電気株式会社 | 半導体記憶装置 |
-
2001
- 2001-11-14 JP JP2001348723A patent/JP4002749B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-27 US US10/106,046 patent/US6639855B2/en not_active Expired - Lifetime
- 2002-04-04 KR KR1020020018425A patent/KR100865340B1/ko not_active Expired - Fee Related
- 2002-05-02 TW TW091109148A patent/TW538530B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20030039990A (ko) | 2003-05-22 |
| US6639855B2 (en) | 2003-10-28 |
| US20030090942A1 (en) | 2003-05-15 |
| KR100865340B1 (ko) | 2008-10-27 |
| JP4002749B2 (ja) | 2007-11-07 |
| JP2003151295A (ja) | 2003-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |