KR100865340B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR100865340B1
KR100865340B1 KR1020020018425A KR20020018425A KR100865340B1 KR 100865340 B1 KR100865340 B1 KR 100865340B1 KR 1020020018425 A KR1020020018425 A KR 1020020018425A KR 20020018425 A KR20020018425 A KR 20020018425A KR 100865340 B1 KR100865340 B1 KR 100865340B1
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KR
South Korea
Prior art keywords
circuit
redundant
semiconductor memory
circuits
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020020018425A
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English (en)
Korean (ko)
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KR20030039990A (ko
Inventor
후루모치가즈토
Original Assignee
후지쯔 마이크로일렉트로닉스 가부시키가이샤
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Publication date
Application filed by 후지쯔 마이크로일렉트로닉스 가부시키가이샤 filed Critical 후지쯔 마이크로일렉트로닉스 가부시키가이샤
Publication of KR20030039990A publication Critical patent/KR20030039990A/ko
Application granted granted Critical
Publication of KR100865340B1 publication Critical patent/KR100865340B1/ko
Assigned to 가부시키가이샤 소시오넥스트 reassignment 가부시키가이샤 소시오넥스트 권리의 전부이전등록 Assignors: 후지쯔 세미컨덕터 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1020020018425A 2001-11-14 2002-04-04 반도체 장치 Expired - Fee Related KR100865340B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00348723 2001-11-14
JP2001348723A JP4002749B2 (ja) 2001-11-14 2001-11-14 半導体装置

Publications (2)

Publication Number Publication Date
KR20030039990A KR20030039990A (ko) 2003-05-22
KR100865340B1 true KR100865340B1 (ko) 2008-10-27

Family

ID=19161500

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020018425A Expired - Fee Related KR100865340B1 (ko) 2001-11-14 2002-04-04 반도체 장치

Country Status (4)

Country Link
US (1) US6639855B2 (https=)
JP (1) JP4002749B2 (https=)
KR (1) KR100865340B1 (https=)
TW (1) TW538530B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3597501B2 (ja) * 2001-11-20 2004-12-08 松下電器産業株式会社 半導体集積回路
US6900688B2 (en) * 2002-09-27 2005-05-31 Oki Electric Industry Co., Ltd. Switch circuit
KR101038983B1 (ko) * 2005-06-28 2011-06-03 주식회사 하이닉스반도체 리던던시부를 갖춘 메모리 장치
JP4679627B2 (ja) * 2008-10-29 2011-04-27 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
US8879328B2 (en) * 2013-03-15 2014-11-04 Qualcomm Incorporated Sense amplifier column redundancy
JP2021048230A (ja) * 2019-09-18 2021-03-25 キオクシア株式会社 半導体記憶装置
WO2022198829A1 (en) * 2021-03-24 2022-09-29 Yangtze Memory Technologies Co., Ltd. Memory device with failed main bank repair using redundant bank
CN118692545A (zh) 2021-03-24 2024-09-24 长江存储科技有限责任公司 使用冗余存储体进行故障主存储体修复的存储器件
KR102869247B1 (ko) 2021-03-24 2025-10-13 양쯔 메모리 테크놀로지스 씨오., 엘티디. 리던던트 뱅크를 이용하여 결함 메인 뱅크를 리페어하는 메모리 디바이스

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263697A (ja) * 1990-03-13 1991-11-25 Sharp Corp 半導体記憶装置
JPH04255998A (ja) * 1991-02-08 1992-09-10 Nec Ic Microcomput Syst Ltd 半導体記憶装置
KR960016807A (ko) * 1994-11-21 1996-06-17 리어로드식 냉동 쇼케이스
KR960016807B1 (ko) * 1994-06-30 1996-12-21 삼성전자 주식회사 반도체 메모리 장치의 리던던시 회로
US5715202A (en) * 1994-12-22 1998-02-03 Kabushiki Kaisha Toshiba Semiconductor memory device
US6151259A (en) * 1998-09-16 2000-11-21 Nec Corporation Semiconductor memory device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2930029B2 (ja) 1996-09-20 1999-08-03 日本電気株式会社 半導体メモリ装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263697A (ja) * 1990-03-13 1991-11-25 Sharp Corp 半導体記憶装置
JPH04255998A (ja) * 1991-02-08 1992-09-10 Nec Ic Microcomput Syst Ltd 半導体記憶装置
KR960016807B1 (ko) * 1994-06-30 1996-12-21 삼성전자 주식회사 반도체 메모리 장치의 리던던시 회로
KR960016807A (ko) * 1994-11-21 1996-06-17 리어로드식 냉동 쇼케이스
US5715202A (en) * 1994-12-22 1998-02-03 Kabushiki Kaisha Toshiba Semiconductor memory device
US6151259A (en) * 1998-09-16 2000-11-21 Nec Corporation Semiconductor memory device

Also Published As

Publication number Publication date
KR20030039990A (ko) 2003-05-22
US6639855B2 (en) 2003-10-28
TW538530B (en) 2003-06-21
US20030090942A1 (en) 2003-05-15
JP4002749B2 (ja) 2007-11-07
JP2003151295A (ja) 2003-05-23

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