JP3993461B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
JP3993461B2
JP3993461B2 JP2002140293A JP2002140293A JP3993461B2 JP 3993461 B2 JP3993461 B2 JP 3993461B2 JP 2002140293 A JP2002140293 A JP 2002140293A JP 2002140293 A JP2002140293 A JP 2002140293A JP 3993461 B2 JP3993461 B2 JP 3993461B2
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Japan
Prior art keywords
mis transistor
semiconductor chip
semiconductor
semiconductor module
module according
Prior art date
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Expired - Lifetime
Application number
JP2002140293A
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English (en)
Japanese (ja)
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JP2003332518A5 (enExample
JP2003332518A (ja
Inventor
充弘 亀田
巧一 鮫島
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002140293A priority Critical patent/JP3993461B2/ja
Priority to US10/438,106 priority patent/US6867494B2/en
Publication of JP2003332518A publication Critical patent/JP2003332518A/ja
Priority to US10/934,451 priority patent/US7259459B2/en
Publication of JP2003332518A5 publication Critical patent/JP2003332518A5/ja
Application granted granted Critical
Publication of JP3993461B2 publication Critical patent/JP3993461B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/146—VDMOS having built-in components the built-in components being Schottky barrier diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6605—High-frequency electrical connections
    • H01L2223/6611—Wire connections
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4905—Shape
    • H01L2224/49051—Connectors having different shapes
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01004—Beryllium [Be]
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/901—MOSFET substrate bias

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
JP2002140293A 2002-05-15 2002-05-15 半導体モジュール Expired - Lifetime JP3993461B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002140293A JP3993461B2 (ja) 2002-05-15 2002-05-15 半導体モジュール
US10/438,106 US6867494B2 (en) 2002-05-15 2003-05-15 Semiconductor module
US10/934,451 US7259459B2 (en) 2002-05-15 2004-09-07 Semiconductor module and DC-DC converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002140293A JP3993461B2 (ja) 2002-05-15 2002-05-15 半導体モジュール

Publications (3)

Publication Number Publication Date
JP2003332518A JP2003332518A (ja) 2003-11-21
JP2003332518A5 JP2003332518A5 (enExample) 2005-03-10
JP3993461B2 true JP3993461B2 (ja) 2007-10-17

Family

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JP2002140293A Expired - Lifetime JP3993461B2 (ja) 2002-05-15 2002-05-15 半導体モジュール

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US (2) US6867494B2 (enExample)
JP (1) JP3993461B2 (enExample)

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US6856006B2 (en) * 2002-03-28 2005-02-15 Siliconix Taiwan Ltd Encapsulation method and leadframe for leadless semiconductor packages
JP3993461B2 (ja) * 2002-05-15 2007-10-17 株式会社東芝 半導体モジュール
JP3809168B2 (ja) * 2004-02-03 2006-08-16 株式会社東芝 半導体モジュール
JP2006049341A (ja) 2004-07-30 2006-02-16 Renesas Technology Corp 半導体装置およびその製造方法
JP2006073655A (ja) * 2004-08-31 2006-03-16 Toshiba Corp 半導体モジュール
JP2006216940A (ja) * 2005-01-07 2006-08-17 Toshiba Corp 半導体装置
JP2007012857A (ja) 2005-06-30 2007-01-18 Renesas Technology Corp 半導体装置
EP1900022B1 (en) * 2005-07-01 2015-10-07 Vishay-Siliconix Complete power management system implemented in a single surface mount package
JP5165214B2 (ja) * 2006-06-26 2013-03-21 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US7825508B2 (en) * 2006-07-28 2010-11-02 Alpha Omega Semiconductor, Inc. Multi-die DC-DC buck power converter with efficient packaging
US7851936B2 (en) * 2008-07-16 2010-12-14 Anadarko Petroleum Corporation Water current power generation system
JP5655339B2 (ja) * 2010-03-26 2015-01-21 サンケン電気株式会社 半導体装置
TWI456738B (zh) * 2010-09-02 2014-10-11 大中積體電路股份有限公司 整合轉換器之半導體元件及其封裝結構
CN102447383B (zh) * 2010-10-08 2014-08-27 大中积体电路股份有限公司 整合转换器的半导体组件及其封装结构
JP5315378B2 (ja) * 2011-05-23 2013-10-16 ルネサスエレクトロニクス株式会社 Ｄｃ／ｄｃコンバータ用半導体装置
JP2013219306A (ja) * 2012-04-12 2013-10-24 Advanced Power Device Research Association 半導体ダイオード装置
JP6064682B2 (ja) * 2013-03-01 2017-01-25 住友電気工業株式会社 半導体装置
JP2015029040A (ja) * 2013-07-05 2015-02-12 サンケン電気株式会社 半導体モジュール、ｌｅｄ駆動装置及びｌｅｄ照明装置
CN104766920A (zh) * 2015-01-26 2015-07-08 广州华微电子有限公司 一种大功率led驱动芯片的sop8封装引线框架
DE102015107680B4 (de) * 2015-05-15 2020-07-30 Infineon Technologies Ag Integrierte Schaltung mit lateralem Feldeffekttransistor mit isoliertem Gate
CN117296248A (zh) * 2021-05-11 2023-12-26 罗姆股份有限公司 半导体器件

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JP2704342B2 (ja) 1992-04-03 1998-01-26 シャープ株式会社 半導体装置およびその製造方法
JP3022178B2 (ja) 1994-06-21 2000-03-15 日産自動車株式会社 パワーデバイスチップの実装構造
JP3172642B2 (ja) 1994-11-01 2001-06-04 シャープ株式会社 半導体装置
US5814884C1 (en) 1996-10-24 2002-01-29 Int Rectifier Corp Commonly housed diverse semiconductor die
US5925910A (en) 1997-03-28 1999-07-20 Stmicroelectronics, Inc. DMOS transistors with schottky diode body structure
US6388319B1 (en) 1999-05-25 2002-05-14 International Rectifier Corporation Three commonly housed diverse semiconductor dice
JP4488660B2 (ja) 2000-09-11 2010-06-23 株式会社東芝 Ｍｏｓ電界効果トランジスタ
JP2002217416A (ja) 2001-01-16 2002-08-02 Hitachi Ltd 半導体装置
JP2003007843A (ja) 2001-06-20 2003-01-10 Toshiba Corp 半導体装置
JP3993461B2 (ja) * 2002-05-15 2007-10-17 株式会社東芝 半導体モジュール

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Publication number Publication date
US6867494B2 (en) 2005-03-15
US7259459B2 (en) 2007-08-21
US20040026744A1 (en) 2004-02-12
JP2003332518A (ja) 2003-11-21
US20050029617A1 (en) 2005-02-10

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