JP3954383B2 - 化学機械研磨用研磨剤及び基板の研磨法 - Google Patents

化学機械研磨用研磨剤及び基板の研磨法 Download PDF

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Publication number
JP3954383B2
JP3954383B2 JP2001517419A JP2001517419A JP3954383B2 JP 3954383 B2 JP3954383 B2 JP 3954383B2 JP 2001517419 A JP2001517419 A JP 2001517419A JP 2001517419 A JP2001517419 A JP 2001517419A JP 3954383 B2 JP3954383 B2 JP 3954383B2
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JP
Japan
Prior art keywords
polishing
tantalum
acid
copper
abrasive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2001517419A
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English (en)
Japanese (ja)
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JPWO2001013417A1 (ja
Inventor
靖 倉田
康雄 上方
剛 内田
裕樹 寺崎
明子 五十嵐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Publication of JPWO2001013417A1 publication Critical patent/JPWO2001013417A1/ja
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Publication of JP3954383B2 publication Critical patent/JP3954383B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2001517419A 1999-08-17 2000-08-17 化学機械研磨用研磨剤及び基板の研磨法 Expired - Lifetime JP3954383B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP11-230930 1999-08-17
JP23093099 1999-08-17
JP11-308665 1999-10-29
JP30866599 1999-10-29
PCT/JP2000/005508 WO2001013417A1 (fr) 1999-08-17 2000-08-17 Compose de polissage pour polissage chimiomecanique et procede pour polir un substrat

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006034808A Division JP4684121B2 (ja) 1999-08-17 2006-02-13 化学機械研磨用研磨剤及び基板の研磨法
JP2006034860A Division JP2006191132A (ja) 1999-08-17 2006-02-13 化学機械研磨用研磨剤及び基板の研磨法

Publications (2)

Publication Number Publication Date
JPWO2001013417A1 JPWO2001013417A1 (ja) 2003-03-11
JP3954383B2 true JP3954383B2 (ja) 2007-08-08

Family

ID=26529617

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2001517419A Expired - Lifetime JP3954383B2 (ja) 1999-08-17 2000-08-17 化学機械研磨用研磨剤及び基板の研磨法
JP2010255262A Expired - Lifetime JP5472049B2 (ja) 1999-08-17 2010-11-15 化学機械研磨用研磨剤
JP2012099648A Withdrawn JP2012182473A (ja) 1999-08-17 2012-04-25 化学機械研磨用研磨剤

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2010255262A Expired - Lifetime JP5472049B2 (ja) 1999-08-17 2010-11-15 化学機械研磨用研磨剤
JP2012099648A Withdrawn JP2012182473A (ja) 1999-08-17 2012-04-25 化学機械研磨用研磨剤

Country Status (8)

Country Link
US (2) US7744666B2 (enExample)
EP (1) EP1211717B1 (enExample)
JP (3) JP3954383B2 (enExample)
KR (1) KR100510977B1 (enExample)
CN (1) CN101792655B (enExample)
AU (1) AU6594200A (enExample)
TW (1) TW501197B (enExample)
WO (1) WO2001013417A1 (enExample)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11181403A (ja) 1997-12-18 1999-07-06 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
AU6731600A (en) * 1999-08-26 2001-03-26 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP4505891B2 (ja) * 1999-09-06 2010-07-21 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
US6503418B2 (en) * 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
US6605537B2 (en) 2000-10-27 2003-08-12 Rodel Holdings, Inc. Polishing of metal substrates
JP2004523123A (ja) * 2001-03-12 2004-07-29 ロデール　ホールディングス　インコーポレイテッド Ｃｍｐ研磨のための方法及び組成物
JP4439755B2 (ja) * 2001-03-29 2010-03-24 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いたメモリーハードディスクの製造方法
KR100451986B1 (ko) * 2001-12-31 2004-10-08 주식회사 하이닉스반도체 반도체 소자의 저장전극 콘택 플러그 형성방법
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
US7300602B2 (en) * 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
DE602004026454D1 (de) * 2003-09-30 2010-05-20 Fujimi Inc Polierzusammensetzung und polierverfahren
US20050139119A1 (en) * 2003-12-24 2005-06-30 Rader W. S. Polishing composition
JP4644434B2 (ja) 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
US7497967B2 (en) 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7384871B2 (en) 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
JP2006086462A (ja) 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
US7086935B2 (en) 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7435356B2 (en) 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
KR100620064B1 (ko) 2004-12-28 2006-09-08 주식회사 하이닉스반도체 반도체장치의 스토리지노드콘택 형성 방법
DE102006013728A1 (de) * 2005-03-28 2006-10-19 Samsung Corning Co., Ltd., Suwon Verfahren zum Herstellen einer Polierslurry mit hoher Dispersionsstabilität
JP4776269B2 (ja) * 2005-04-28 2011-09-21 株式会社東芝 金属膜ｃｍｐ用スラリー、および半導体装置の製造方法
JP2007012679A (ja) * 2005-06-28 2007-01-18 Asahi Glass Co Ltd 研磨剤および半導体集積回路装置の製造方法
EP1757665B8 (en) * 2005-08-24 2012-04-11 JSR Corporation Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion for a chemical mechanical polishing process, and process for producing semiconductor devices
JP2007103515A (ja) * 2005-09-30 2007-04-19 Fujimi Inc 研磨方法
US7820067B2 (en) * 2006-03-23 2010-10-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
JPWO2007116770A1 (ja) * 2006-04-03 2009-08-20 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法、ならびに化学機械研磨用水系分散体を調製するためのキット
SG139699A1 (en) 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
KR100816731B1 (ko) * 2006-09-28 2008-03-25 주식회사 하이닉스반도체 반도체 소자 제조방법
US7837888B2 (en) * 2006-11-13 2010-11-23 Cabot Microelectronics Corporation Composition and method for damascene CMP
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
CN101636465A (zh) * 2007-01-31 2010-01-27 高级技术材料公司 用于化学机械抛光浆料应用的聚合物-二氧化硅分散剂的稳定化
JP5327427B2 (ja) * 2007-06-19 2013-10-30 Ｊｓｒ株式会社 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法
TWI525680B (zh) * 2007-07-05 2016-03-11 日立化成股份有限公司 金屬膜用硏磨液以及硏磨方法
JP4730358B2 (ja) * 2007-09-03 2011-07-20 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
US7931714B2 (en) * 2007-10-08 2011-04-26 Uwiz Technology Co., Ltd. Composition useful to chemical mechanical planarization of metal
GB2454343B (en) * 2007-10-29 2012-07-11 Kao Corp Polishing composition for hard disk substrate
JP2009164186A (ja) 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP4710915B2 (ja) * 2008-02-08 2011-06-29 日立化成工業株式会社 研磨方法
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
US8344503B2 (en) 2008-11-25 2013-01-01 Freescale Semiconductor, Inc. 3-D circuits with integrated passive devices
KR101279963B1 (ko) * 2008-12-24 2013-07-05 제일모직주식회사 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
KR101279964B1 (ko) * 2008-12-29 2013-07-05 제일모직주식회사 구리 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP2012146972A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
JP5979871B2 (ja) * 2011-03-09 2016-08-31 花王株式会社 磁気ディスク基板の製造方法
JP5907333B2 (ja) * 2011-08-22 2016-04-26 Jsr株式会社 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法
CN102504705B (zh) * 2011-10-17 2014-07-09 河南省化工研究所有限责任公司 光通讯Zr02陶瓷插芯精密加工用抛光液及其制备方法
US8659156B2 (en) 2011-10-18 2014-02-25 International Business Machines Corporation Interconnect structure with an electromigration and stress migration enhancement liner
US9909032B2 (en) 2014-01-15 2018-03-06 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks
CN104263249B (zh) * 2014-09-26 2016-06-29 深圳市力合材料有限公司 一种硅溶胶的处理方法
CN104264152A (zh) * 2014-10-09 2015-01-07 无锡康柏斯机械科技有限公司 一种金属专用抛光剂及其制备方法
US20180086943A1 (en) * 2015-03-30 2018-03-29 Jsr Corporation Treatment composition for chemical mechanical polishing, chemical mechanical polishing method, and cleaning method
KR101861894B1 (ko) * 2015-05-15 2018-05-29 삼성에스디아이 주식회사 유기막 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법
KR102483321B1 (ko) * 2015-11-16 2022-12-30 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
TW201742900A (zh) 2016-06-09 2017-12-16 日立化成股份有限公司 Cmp用研磨液及研磨方法
JP7727461B2 (ja) * 2021-09-17 2025-08-21 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法、および半導体基板の製造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0833267B1 (en) * 1996-09-30 2004-02-25 STMicroelectronics S.r.l. Charge injection circuit for an insulated gate MOS transistor and computing devices using the same
US4789648A (en) * 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
JPH05337816A (ja) 1992-06-08 1993-12-21 Nippon Steel Corp シリコンウェーハの鏡面加工法
JP2857042B2 (ja) * 1993-10-19 1999-02-10 新日本製鐵株式会社 シリコン半導体およびシリコン酸化物の洗浄液
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP3509188B2 (ja) 1994-06-22 2004-03-22 ソニー株式会社 化学機械研磨用微粒子の製造方法及びこれを用いた研磨方法
US5733176A (en) 1996-05-24 1998-03-31 Micron Technology, Inc. Polishing pad and method of use
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
KR100761636B1 (ko) * 1996-09-30 2007-09-27 히다치 가세고교 가부시끼가이샤 산화세륨 입자
JPH10298538A (ja) * 1997-04-30 1998-11-10 Hitachi Chem Co Ltd 酸化セリウム研磨剤及び基板の研磨法
US5972792A (en) * 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US5858513A (en) * 1996-12-20 1999-01-12 Tht United States Of America As Represented By The Secretary Of The Navy Channeled ceramic structure and process for making same
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
JP3970439B2 (ja) 1997-10-31 2007-09-05 株式会社ルネサステクノロジ 半導体装置の製造方法
EP1102821A4 (en) * 1998-06-10 2004-05-19 Rodel Inc COMPOSITION AND METHOD FOR CMP POLISHING METAL
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
JP4095731B2 (ja) 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP2000160139A (ja) * 1998-12-01 2000-06-13 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6238592B1 (en) 1999-03-10 2001-05-29 3M Innovative Properties Company Working liquids and methods for modifying structured wafers suited for semiconductor fabrication
US6234875B1 (en) * 1999-06-09 2001-05-22 3M Innovative Properties Company Method of modifying a surface
TW486514B (en) 1999-06-16 2002-05-11 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
US6409781B1 (en) * 2000-05-01 2002-06-25 Advanced Technology Materials, Inc. Polishing slurries for copper and associated materials
US6918820B2 (en) * 2003-04-11 2005-07-19 Eastman Kodak Company Polishing compositions comprising polymeric cores having inorganic surface particles and method of use

Also Published As

Publication number Publication date
EP1211717A1 (en) 2002-06-05
CN101792655B (zh) 2013-05-01
JP5472049B2 (ja) 2014-04-16
EP1211717B1 (en) 2016-04-13
JP2012182473A (ja) 2012-09-20
CN101792655A (zh) 2010-08-04
KR20020021408A (ko) 2002-03-20
US7744666B2 (en) 2010-06-29
WO2001013417A1 (fr) 2001-02-22
KR100510977B1 (ko) 2005-08-31
EP1211717A4 (en) 2007-03-28
US20060037251A1 (en) 2006-02-23
TW501197B (en) 2002-09-01
JP2011082537A (ja) 2011-04-21
US7319072B2 (en) 2008-01-15
AU6594200A (en) 2001-03-13
US20060124597A1 (en) 2006-06-15

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