JP3924352B2 - 裏面照射型受光デバイス - Google Patents

裏面照射型受光デバイス Download PDF

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Publication number
JP3924352B2
JP3924352B2 JP14799297A JP14799297A JP3924352B2 JP 3924352 B2 JP3924352 B2 JP 3924352B2 JP 14799297 A JP14799297 A JP 14799297A JP 14799297 A JP14799297 A JP 14799297A JP 3924352 B2 JP3924352 B2 JP 3924352B2
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JP
Japan
Prior art keywords
light receiving
film
receiving device
glass substrate
illuminated light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP14799297A
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English (en)
Japanese (ja)
Other versions
JPH10335624A5 (https=
JPH10335624A (ja
Inventor
寛 赤堀
雅治 村松
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP14799297A priority Critical patent/JP3924352B2/ja
Priority to US09/092,014 priority patent/US6204506B1/en
Priority to DE69825674T priority patent/DE69825674T2/de
Priority to EP98304465A priority patent/EP0883189B1/en
Publication of JPH10335624A publication Critical patent/JPH10335624A/ja
Publication of JPH10335624A5 publication Critical patent/JPH10335624A5/ja
Application granted granted Critical
Publication of JP3924352B2 publication Critical patent/JP3924352B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP14799297A 1997-06-05 1997-06-05 裏面照射型受光デバイス Expired - Fee Related JP3924352B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP14799297A JP3924352B2 (ja) 1997-06-05 1997-06-05 裏面照射型受光デバイス
US09/092,014 US6204506B1 (en) 1997-06-05 1998-06-04 Back illuminated photodetector and method of fabricating the same
DE69825674T DE69825674T2 (de) 1997-06-05 1998-06-05 Rückbeleuchteter Fotodetektor und Methode zu dessen Herstellung
EP98304465A EP0883189B1 (en) 1997-06-05 1998-06-05 Back illuminated photodetector and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14799297A JP3924352B2 (ja) 1997-06-05 1997-06-05 裏面照射型受光デバイス

Publications (3)

Publication Number Publication Date
JPH10335624A JPH10335624A (ja) 1998-12-18
JPH10335624A5 JPH10335624A5 (https=) 2005-01-20
JP3924352B2 true JP3924352B2 (ja) 2007-06-06

Family

ID=15442715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14799297A Expired - Fee Related JP3924352B2 (ja) 1997-06-05 1997-06-05 裏面照射型受光デバイス

Country Status (4)

Country Link
US (1) US6204506B1 (https=)
EP (1) EP0883189B1 (https=)
JP (1) JP3924352B2 (https=)
DE (1) DE69825674T2 (https=)

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JP2004507881A (ja) * 2000-04-20 2004-03-11 ディジラッド・コーポレーション 低漏洩電流の裏面照射フォトダイオードの製造
JP2003017676A (ja) * 2001-04-27 2003-01-17 Canon Inc 放射線撮像装置およびそれを用いた放射線撮像システム
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
JP4482253B2 (ja) * 2001-09-12 2010-06-16 浜松ホトニクス株式会社 ホトダイオードアレイ、固体撮像装置、及び、放射線検出器
JP2003086827A (ja) * 2001-09-12 2003-03-20 Hamamatsu Photonics Kk ホトダイオードアレイ、固体撮像装置、及び、放射線検出器
US6720561B2 (en) 2001-12-06 2004-04-13 General Electric Company Direct CsI scintillator coating for improved digital X-ray detector assembly longevity
US7053381B2 (en) 2001-12-06 2006-05-30 General Electric Company Dual para-xylylene layers for an X-ray detector
KR100446624B1 (ko) * 2002-02-27 2004-09-04 삼성전자주식회사 양극접합 구조체 및 그 제조방법
JP4373695B2 (ja) * 2003-04-16 2009-11-25 浜松ホトニクス株式会社 裏面照射型光検出装置の製造方法
US6762473B1 (en) * 2003-06-25 2004-07-13 Semicoa Semiconductors Ultra thin back-illuminated photodiode array structures and fabrication methods
DE10335662A1 (de) * 2003-08-04 2005-03-10 Siemens Ag Detektormodul für einen Detektor zur Detektion ionisierender Strahlung sowie Detektor
JP2005167090A (ja) 2003-12-04 2005-06-23 Hamamatsu Photonics Kk 半導体受光素子及びその製造方法
US7425460B2 (en) * 2004-09-17 2008-09-16 California Institute Of Technology Method for implementation of back-illuminated CMOS or CCD imagers
WO2007059283A2 (en) 2005-11-15 2007-05-24 California Institute Of Technology Back-illuminated imager and method for making electrical and optical connections to same
US7586139B2 (en) 2006-02-17 2009-09-08 International Business Machines Corporation Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
JP2009105291A (ja) * 2007-10-25 2009-05-14 Panasonic Corp 接合構造体およびその製造方法
US7737390B2 (en) * 2008-01-14 2010-06-15 Tower Semiconductor, Ltd. Horizontal row drivers for CMOS image sensor with tiling on three edges
JP5301312B2 (ja) * 2008-03-21 2013-09-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置の較正用基板及び描画方法
JP5185207B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185208B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP5185206B2 (ja) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
KR101149433B1 (ko) * 2009-08-28 2012-05-22 삼성모바일디스플레이주식회사 플렉서블 표시 장치 및 그 제조 방법
JP2011066093A (ja) * 2009-09-15 2011-03-31 Olympus Corp 撮像ユニット
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
WO2011160130A2 (en) 2010-06-18 2011-12-22 Sionyx, Inc High speed photosensitive devices and associated methods
DE102011014162B4 (de) * 2011-03-16 2019-12-05 Berliner Glas Kgaa Herbert Kubatz Gmbh & Co Verfahren zur Herstellung eines Trägers eines elektrostatischen Clamps
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
US8748828B2 (en) * 2011-09-21 2014-06-10 Kla-Tencor Corporation Interposer based imaging sensor for high-speed image acquisition and inspection systems
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP6169856B2 (ja) 2013-02-13 2017-07-26 浜松ホトニクス株式会社 裏面入射型エネルギー線検出素子
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
JP5534081B2 (ja) * 2013-05-20 2014-06-25 ソニー株式会社 固体撮像素子の製造方法
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
JP2014199949A (ja) * 2014-07-01 2014-10-23 オリンパス株式会社 撮像ユニット
EP3767663A1 (en) * 2019-07-16 2021-01-20 FEI Company Method of manufacturing a charged particle detector
CN115588678B (zh) * 2022-11-02 2026-02-27 华中科技大学 一种电荷耦合器件以及电荷耦合器件的制备方法

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Also Published As

Publication number Publication date
EP0883189B1 (en) 2004-08-18
DE69825674D1 (de) 2004-09-23
US6204506B1 (en) 2001-03-20
DE69825674T2 (de) 2005-08-11
EP0883189A1 (en) 1998-12-09
JPH10335624A (ja) 1998-12-18

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