DE69825674T2 - Rückbeleuchteter Fotodetektor und Methode zu dessen Herstellung - Google Patents

Rückbeleuchteter Fotodetektor und Methode zu dessen Herstellung Download PDF

Info

Publication number
DE69825674T2
DE69825674T2 DE69825674T DE69825674T DE69825674T2 DE 69825674 T2 DE69825674 T2 DE 69825674T2 DE 69825674 T DE69825674 T DE 69825674T DE 69825674 T DE69825674 T DE 69825674T DE 69825674 T2 DE69825674 T2 DE 69825674T2
Authority
DE
Germany
Prior art keywords
film
semiconductor
conductive film
semiconductor substrate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69825674T
Other languages
German (de)
English (en)
Other versions
DE69825674D1 (de
Inventor
Hiroshi Hamamatsu-shi Akahori
Masaharu Hamamatsu-shi MURAMATSU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE69825674D1 publication Critical patent/DE69825674D1/de
Application granted granted Critical
Publication of DE69825674T2 publication Critical patent/DE69825674T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE69825674T 1997-06-05 1998-06-05 Rückbeleuchteter Fotodetektor und Methode zu dessen Herstellung Expired - Lifetime DE69825674T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14799297A JP3924352B2 (ja) 1997-06-05 1997-06-05 裏面照射型受光デバイス
JP14799297 1997-06-05

Publications (2)

Publication Number Publication Date
DE69825674D1 DE69825674D1 (de) 2004-09-23
DE69825674T2 true DE69825674T2 (de) 2005-08-11

Family

ID=15442715

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69825674T Expired - Lifetime DE69825674T2 (de) 1997-06-05 1998-06-05 Rückbeleuchteter Fotodetektor und Methode zu dessen Herstellung

Country Status (4)

Country Link
US (1) US6204506B1 (https=)
EP (1) EP0883189B1 (https=)
JP (1) JP3924352B2 (https=)
DE (1) DE69825674T2 (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004507881A (ja) * 2000-04-20 2004-03-11 ディジラッド・コーポレーション 低漏洩電流の裏面照射フォトダイオードの製造
JP2003017676A (ja) * 2001-04-27 2003-01-17 Canon Inc 放射線撮像装置およびそれを用いた放射線撮像システム
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
JP4482253B2 (ja) * 2001-09-12 2010-06-16 浜松ホトニクス株式会社 ホトダイオードアレイ、固体撮像装置、及び、放射線検出器
JP2003086827A (ja) * 2001-09-12 2003-03-20 Hamamatsu Photonics Kk ホトダイオードアレイ、固体撮像装置、及び、放射線検出器
US6720561B2 (en) 2001-12-06 2004-04-13 General Electric Company Direct CsI scintillator coating for improved digital X-ray detector assembly longevity
US7053381B2 (en) 2001-12-06 2006-05-30 General Electric Company Dual para-xylylene layers for an X-ray detector
KR100446624B1 (ko) * 2002-02-27 2004-09-04 삼성전자주식회사 양극접합 구조체 및 그 제조방법
JP4373695B2 (ja) * 2003-04-16 2009-11-25 浜松ホトニクス株式会社 裏面照射型光検出装置の製造方法
US6762473B1 (en) * 2003-06-25 2004-07-13 Semicoa Semiconductors Ultra thin back-illuminated photodiode array structures and fabrication methods
DE10335662A1 (de) * 2003-08-04 2005-03-10 Siemens Ag Detektormodul für einen Detektor zur Detektion ionisierender Strahlung sowie Detektor
JP2005167090A (ja) 2003-12-04 2005-06-23 Hamamatsu Photonics Kk 半導体受光素子及びその製造方法
US7425460B2 (en) * 2004-09-17 2008-09-16 California Institute Of Technology Method for implementation of back-illuminated CMOS or CCD imagers
WO2007059283A2 (en) 2005-11-15 2007-05-24 California Institute Of Technology Back-illuminated imager and method for making electrical and optical connections to same
US7586139B2 (en) 2006-02-17 2009-09-08 International Business Machines Corporation Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
JP2009105291A (ja) * 2007-10-25 2009-05-14 Panasonic Corp 接合構造体およびその製造方法
US7737390B2 (en) * 2008-01-14 2010-06-15 Tower Semiconductor, Ltd. Horizontal row drivers for CMOS image sensor with tiling on three edges
JP5301312B2 (ja) * 2008-03-21 2013-09-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置の較正用基板及び描画方法
JP5185207B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185208B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP5185206B2 (ja) * 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
KR101149433B1 (ko) * 2009-08-28 2012-05-22 삼성모바일디스플레이주식회사 플렉서블 표시 장치 및 그 제조 방법
JP2011066093A (ja) * 2009-09-15 2011-03-31 Olympus Corp 撮像ユニット
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
WO2011160130A2 (en) 2010-06-18 2011-12-22 Sionyx, Inc High speed photosensitive devices and associated methods
DE102011014162B4 (de) * 2011-03-16 2019-12-05 Berliner Glas Kgaa Herbert Kubatz Gmbh & Co Verfahren zur Herstellung eines Trägers eines elektrostatischen Clamps
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
US8748828B2 (en) * 2011-09-21 2014-06-10 Kla-Tencor Corporation Interposer based imaging sensor for high-speed image acquisition and inspection systems
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP6169856B2 (ja) 2013-02-13 2017-07-26 浜松ホトニクス株式会社 裏面入射型エネルギー線検出素子
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
JP5534081B2 (ja) * 2013-05-20 2014-06-25 ソニー株式会社 固体撮像素子の製造方法
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
JP2014199949A (ja) * 2014-07-01 2014-10-23 オリンパス株式会社 撮像ユニット
EP3767663A1 (en) * 2019-07-16 2021-01-20 FEI Company Method of manufacturing a charged particle detector
CN115588678B (zh) * 2022-11-02 2026-02-27 华中科技大学 一种电荷耦合器件以及电荷耦合器件的制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53114361A (en) 1977-03-16 1978-10-05 Hitachi Ltd Insulating separation substrate
US4422091A (en) 1981-01-19 1983-12-20 Rockwell International Corporation Backside illuminated imaging charge coupled device
US4946716A (en) 1985-05-31 1990-08-07 Tektronix, Inc. Method of thinning a silicon wafer using a reinforcing material
JPH0194651A (ja) 1987-10-06 1989-04-13 Nec Corp 半導体装置およびその製造方法
US5343064A (en) 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
US4923825A (en) 1989-05-01 1990-05-08 Tektronix, Inc. Method of treating a semiconductor body
JPH0693448A (ja) 1992-09-11 1994-04-05 Seiko Instr Inc 硬質炭素膜被覆耐摩耗部材
JPH06268183A (ja) 1993-03-15 1994-09-22 Fujitsu Ltd 半導体装置の製造方法
JP3211995B2 (ja) 1993-03-31 2001-09-25 セイコーインスツルメンツ株式会社 半導体装置の製造方法
US5414276A (en) 1993-10-18 1995-05-09 The Regents Of The University Of California Transistors using crystalline silicon devices on glass

Also Published As

Publication number Publication date
EP0883189B1 (en) 2004-08-18
DE69825674D1 (de) 2004-09-23
US6204506B1 (en) 2001-03-20
JP3924352B2 (ja) 2007-06-06
EP0883189A1 (en) 1998-12-09
JPH10335624A (ja) 1998-12-18

Similar Documents

Publication Publication Date Title
DE69825674T2 (de) Rückbeleuchteter Fotodetektor und Methode zu dessen Herstellung
DE69123563T2 (de) Hochempfindliches, hochauflösendes festkörperröntgen-abbildungsgerät mit sperrschicht
DE69126221T2 (de) Röntgen-Abbildungsvorrichtung aus Festkörperbauelementen
DE102018133660B4 (de) Waferebene-bildsensor-package
DE69332648T2 (de) Grossflächige aktive Matrix
DE60225916T2 (de) Festkörper-röntgendetektormodul und mosaikförmige anordnung desselben, sowie ein bildherstellungsverfahren und eine vorrichtung dazu, die dieses modul verwendt
DE69029464T2 (de) Festkörperstrahlungsdetektor
DE69533304T2 (de) Festkörperbildaufnahmevorrichtung
DE69737492T2 (de) Verfahren zur Herstellung eines lichtempfindlichen Bauelements mit rückseitem Strahlungseintritt
DE69214366T2 (de) Bildgebender Detektor mit Wellenlängenschieber
DE69115834T2 (de) Vorrichtungen von Infrarot-Detektoren
DE69635303T2 (de) Röntgenstrahlungs-bildsensor
DE69417317T2 (de) Festkörperstrahlungsdetektor mit einer Sperrschicht
DE60035580T2 (de) Halbleiter
DE102007012279B4 (de) Bildsensor, Sensorarray, Sensorsystem und Herstellungsverfahren
DE10392637T5 (de) Hintergrundbeleuchtetes Photodioden-Array und Verfahren zum Herstellen desselben
EP0090066B1 (de) Festkörper-Fernsehkamera
DE112019003064T5 (de) Rückseitig beleuchteter sensor und verfahren zur herstellung eines sensors
DE69825808T2 (de) Photoelektrische Umwandlungsanordnung
EP2210073B1 (de) Schaltungsanordnung zum erzeugen von licht- und temperaturabhängigen signalen, insbesondere für ein bildgebendes pyrometer
DE3031759A1 (de) Festkoerper-bildaufnahmevorrichtung
DE8706818U1 (de) Fotodiodenmatrix
DE3005766A1 (de) Festkoerper-abbildungsanordnung
DE3500645A1 (de) Fotosensoranordnung
DE69126101T2 (de) Festkörperbildaufnahmevorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition