JP3923716B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3923716B2
JP3923716B2 JP2000301068A JP2000301068A JP3923716B2 JP 3923716 B2 JP3923716 B2 JP 3923716B2 JP 2000301068 A JP2000301068 A JP 2000301068A JP 2000301068 A JP2000301068 A JP 2000301068A JP 3923716 B2 JP3923716 B2 JP 3923716B2
Authority
JP
Japan
Prior art keywords
wiring
igbt
chip
semiconductor chip
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000301068A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002110905A5 (https=
JP2002110905A (ja
Inventor
道明 日吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000301068A priority Critical patent/JP3923716B2/ja
Priority to US09/953,295 priority patent/US6770964B2/en
Priority to EP01121717A priority patent/EP1193761A3/en
Publication of JP2002110905A publication Critical patent/JP2002110905A/ja
Publication of JP2002110905A5 publication Critical patent/JP2002110905A5/ja
Application granted granted Critical
Publication of JP3923716B2 publication Critical patent/JP3923716B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/47—Solid or gel fillings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
JP2000301068A 2000-09-29 2000-09-29 半導体装置 Expired - Fee Related JP3923716B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000301068A JP3923716B2 (ja) 2000-09-29 2000-09-29 半導体装置
US09/953,295 US6770964B2 (en) 2000-09-29 2001-09-17 Semiconductor device including intermediate wiring element
EP01121717A EP1193761A3 (en) 2000-09-29 2001-09-17 Semiconductor device including intermediate wiring element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000301068A JP3923716B2 (ja) 2000-09-29 2000-09-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2002110905A JP2002110905A (ja) 2002-04-12
JP2002110905A5 JP2002110905A5 (https=) 2005-06-23
JP3923716B2 true JP3923716B2 (ja) 2007-06-06

Family

ID=18782654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000301068A Expired - Fee Related JP3923716B2 (ja) 2000-09-29 2000-09-29 半導体装置

Country Status (3)

Country Link
US (1) US6770964B2 (https=)
EP (1) EP1193761A3 (https=)
JP (1) JP3923716B2 (https=)

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JP4157001B2 (ja) * 2003-08-28 2008-09-24 株式会社東芝 マルチチップ圧接型半導体装置
US7245007B1 (en) * 2003-09-18 2007-07-17 Amkor Technology, Inc. Exposed lead interposer leadframe package
DE102004008208B4 (de) * 2004-02-19 2008-04-03 Infineon Technologies Ag Leistungshalbleitermodul
JP4824318B2 (ja) * 2005-01-20 2011-11-30 三菱電機株式会社 半導体装置
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JP5168866B2 (ja) * 2006-09-28 2013-03-27 三菱電機株式会社 パワー半導体モジュール
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US7687899B1 (en) 2007-08-07 2010-03-30 Amkor Technology, Inc. Dual laminate package structure with embedded elements
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US8067821B1 (en) 2008-04-10 2011-11-29 Amkor Technology, Inc. Flat semiconductor package with half package molding
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US7808084B1 (en) 2008-05-06 2010-10-05 Amkor Technology, Inc. Semiconductor package with half-etched locking features
US8125064B1 (en) 2008-07-28 2012-02-28 Amkor Technology, Inc. Increased I/O semiconductor package and method of making same
US8184453B1 (en) 2008-07-31 2012-05-22 Amkor Technology, Inc. Increased capacity semiconductor package
US7847392B1 (en) 2008-09-30 2010-12-07 Amkor Technology, Inc. Semiconductor device including leadframe with increased I/O
US7989933B1 (en) 2008-10-06 2011-08-02 Amkor Technology, Inc. Increased I/O leadframe and semiconductor device including same
US8008758B1 (en) 2008-10-27 2011-08-30 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe
US8089145B1 (en) 2008-11-17 2012-01-03 Amkor Technology, Inc. Semiconductor device including increased capacity leadframe
US8072050B1 (en) 2008-11-18 2011-12-06 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including passive device
US7875963B1 (en) 2008-11-21 2011-01-25 Amkor Technology, Inc. Semiconductor device including leadframe having power bars and increased I/O
US7982298B1 (en) 2008-12-03 2011-07-19 Amkor Technology, Inc. Package in package semiconductor device
US8487420B1 (en) 2008-12-08 2013-07-16 Amkor Technology, Inc. Package in package semiconductor device with film over wire
US20170117214A1 (en) 2009-01-05 2017-04-27 Amkor Technology, Inc. Semiconductor device with through-mold via
US8680656B1 (en) 2009-01-05 2014-03-25 Amkor Technology, Inc. Leadframe structure for concentrated photovoltaic receiver package
US8058715B1 (en) 2009-01-09 2011-11-15 Amkor Technology, Inc. Package in package device for RF transceiver module
US8026589B1 (en) 2009-02-23 2011-09-27 Amkor Technology, Inc. Reduced profile stackable semiconductor package
US7960818B1 (en) 2009-03-04 2011-06-14 Amkor Technology, Inc. Conformal shield on punch QFN semiconductor package
US8575742B1 (en) 2009-04-06 2013-11-05 Amkor Technology, Inc. Semiconductor device with increased I/O leadframe including power bars
US8674485B1 (en) 2010-12-08 2014-03-18 Amkor Technology, Inc. Semiconductor device including leadframe with downsets
TWI557183B (zh) 2015-12-16 2016-11-11 財團法人工業技術研究院 矽氧烷組成物、以及包含其之光電裝置
US8648450B1 (en) 2011-01-27 2014-02-11 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands
JP2014534295A (ja) * 2011-10-06 2014-12-18 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ 改善された熱安定性を有するゲル
EP2764055B1 (en) * 2011-10-06 2018-03-21 Dow Corning Corporation Method of forming a gel having improved thermal stability
US9209176B2 (en) * 2011-12-07 2015-12-08 Transphorm Inc. Semiconductor modules and methods of forming the same
KR101926854B1 (ko) * 2012-02-09 2018-12-07 후지 덴키 가부시키가이샤 반도체 장치
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KR102034717B1 (ko) * 2013-02-07 2019-10-21 삼성전자주식회사 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
JP2014187264A (ja) * 2013-03-25 2014-10-02 Toshiba Corp 半導体装置
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JP2015144188A (ja) * 2014-01-31 2015-08-06 株式会社東芝 半導体装置及びその製造方法
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JP6272185B2 (ja) * 2014-08-25 2018-01-31 三菱電機株式会社 配線用コア構造、半導体評価装置及び半導体装置
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JP7002994B2 (ja) * 2018-05-15 2022-01-20 株式会社東芝 半導体装置
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Also Published As

Publication number Publication date
EP1193761A2 (en) 2002-04-03
US20020038873A1 (en) 2002-04-04
US6770964B2 (en) 2004-08-03
EP1193761A3 (en) 2005-03-09
JP2002110905A (ja) 2002-04-12

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