JP3923716B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3923716B2
JP3923716B2 JP2000301068A JP2000301068A JP3923716B2 JP 3923716 B2 JP3923716 B2 JP 3923716B2 JP 2000301068 A JP2000301068 A JP 2000301068A JP 2000301068 A JP2000301068 A JP 2000301068A JP 3923716 B2 JP3923716 B2 JP 3923716B2
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JP
Japan
Prior art keywords
wiring
igbt
chip
semiconductor chip
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000301068A
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English (en)
Japanese (ja)
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JP2002110905A (ja
JP2002110905A5 (enExample
Inventor
道明 日吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000301068A priority Critical patent/JP3923716B2/ja
Priority to US09/953,295 priority patent/US6770964B2/en
Priority to EP01121717A priority patent/EP1193761A3/en
Publication of JP2002110905A publication Critical patent/JP2002110905A/ja
Publication of JP2002110905A5 publication Critical patent/JP2002110905A5/ja
Application granted granted Critical
Publication of JP3923716B2 publication Critical patent/JP3923716B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
JP2000301068A 2000-09-29 2000-09-29 半導体装置 Expired - Fee Related JP3923716B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000301068A JP3923716B2 (ja) 2000-09-29 2000-09-29 半導体装置
US09/953,295 US6770964B2 (en) 2000-09-29 2001-09-17 Semiconductor device including intermediate wiring element
EP01121717A EP1193761A3 (en) 2000-09-29 2001-09-17 Semiconductor device including intermediate wiring element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000301068A JP3923716B2 (ja) 2000-09-29 2000-09-29 半導体装置

Publications (3)

Publication Number Publication Date
JP2002110905A JP2002110905A (ja) 2002-04-12
JP2002110905A5 JP2002110905A5 (enExample) 2005-06-23
JP3923716B2 true JP3923716B2 (ja) 2007-06-06

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JP2000301068A Expired - Fee Related JP3923716B2 (ja) 2000-09-29 2000-09-29 半導体装置

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US (1) US6770964B2 (enExample)
EP (1) EP1193761A3 (enExample)
JP (1) JP3923716B2 (enExample)

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DE10300594B4 (de) * 2003-01-10 2013-01-17 Robert Bosch Gmbh Bauelement und Verfahren
JP4157001B2 (ja) * 2003-08-28 2008-09-24 株式会社東芝 マルチチップ圧接型半導体装置
US7245007B1 (en) * 2003-09-18 2007-07-17 Amkor Technology, Inc. Exposed lead interposer leadframe package
DE102004008208B4 (de) * 2004-02-19 2008-04-03 Infineon Technologies Ag Leistungshalbleitermodul
JP4824318B2 (ja) * 2005-01-20 2011-11-30 三菱電機株式会社 半導体装置
US7507603B1 (en) 2005-12-02 2009-03-24 Amkor Technology, Inc. Etch singulated semiconductor package
JP4884830B2 (ja) * 2006-05-11 2012-02-29 三菱電機株式会社 半導体装置
US7968998B1 (en) 2006-06-21 2011-06-28 Amkor Technology, Inc. Side leaded, bottom exposed pad and bottom exposed lead fusion quad flat semiconductor package
JP5168866B2 (ja) * 2006-09-28 2013-03-27 三菱電機株式会社 パワー半導体モジュール
US7977774B2 (en) 2007-07-10 2011-07-12 Amkor Technology, Inc. Fusion quad flat semiconductor package
US7687899B1 (en) 2007-08-07 2010-03-30 Amkor Technology, Inc. Dual laminate package structure with embedded elements
GB2452594B (en) * 2007-08-20 2012-04-25 Champion Aerospace Inc Switching assembly for an aircraft ignition system
US7777351B1 (en) 2007-10-01 2010-08-17 Amkor Technology, Inc. Thin stacked interposer package
US8089159B1 (en) 2007-10-03 2012-01-03 Amkor Technology, Inc. Semiconductor package with increased I/O density and method of making the same
US7847386B1 (en) 2007-11-05 2010-12-07 Amkor Technology, Inc. Reduced size stacked semiconductor package and method of making the same
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